VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max.

Size: px

Start display at page:

Download "VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max."

Amos Sutton
5 years ago
Views:

1 D- 909A IRF7329 HXF ower MOSF l rench echnology l Ultra Low On-Resistance l Dual -hannel MOSF l Low rofile (<.mm) l Available in ape Reel DSS R DS(on) max (m) I D 7@ S = -. ±9.2A -2 2@ S = -2. ±7.A 30@ S = -. ±.6A Description New -hannel HXF Ò power MOSFs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. his benefit, combined with the ruggedized device design that HXF ower MOSFs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S S D D D2 he SO- has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. ith these improvements, multiple devices can be used in an application with dramatically reduced board space. he package is designed for vapor phase, infrared, or wave soldering techniques. 2 op iew D2 SO- Absolute Maximum Ratings arameter Max. Units DS Drain- Source oltage -2 I A = 2 ontinuous Drain urrent, I A = 70 ontinuous Drain urrent, A I DM ulsed Drain urrent -37 A = 2 ower Dissipation ƒ 2.0 A = 70 ower Dissipation ƒ.3 Linear Derating Factor 6 m/ S ate-to-source oltage ±.0 J, S Junction and Storage emperature Range - to + 0 hermal Resistance Symbol arameter yp. Max. Units R qjl Junction-to-Drain Lead 20 R qja Junction-to-Ambient ƒ 62. / 0/29/0

2 lectrical J = 2 (unless otherwise specified) arameter Min. yp. Max. Units onditions (BR)DSS Drain-to-Source Breakdown oltage -2 S = 0, I D = -20µA D (BR)DSS /D J Breakdown oltage emp. oefficient / Reference to 2, I D = -ma R DS(on) Static Drain-to-Source On-Resistance 7 S = -., I D = -9.2A 2 m S = -2., I D = -7.A 30 S = -., I D = -.6A S(th) ate hreshold oltage DS = S, I D = -20µA g fs Forward ransconductance 2 S DS = -0, I D = -9.2A I DSS Drain-to-Source Leakage urrent -.0 µa DS = -9.6, S = 0-2 DS = -9.6, S = 0, J = 70 ate-to-source Forward Leakage -00 S = -.0 I SS na ate-to-source Reverse Leakage 00 S =.0 g otal ate harge 3 7 I D = -9.2A gs ate-to-source harge 6. 0n DS = -6.0 gd ate-to-drain ("Miller") harge. 2 S = -. t d(on) urn-on Delay ime 0 ns DD = -6.0 t r Rise ime.6 I D = -.0A t d(off) urn-off Delay ime 30 R D = 6.0 t f Fall ime 260 S = -. iss Input apacitance 30 S = 0 oss Output apacitance 000 pf DS = -0 rss Reverse ransfer apacitance 60 ƒ =.0MHz Source-Drain Ratings and haracteristics arameter Min. yp. Max. Units onditions I S ontinuous Source urrent MOSF symbol -2.0 (Body Diode) showing the A I SM ulsed Source urrent integral reverse -37 (Body Diode) p-n junction diode. SD Diode Forward oltage -.2 J = 2, I S = -2.0A, S = 0 t rr Reverse Recovery ime 07 ns J = 2, I F = -2.0A rr Reverse Recovery harge 72 n di/dt = -00A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ulse width 00µs; duty cycle 2%. ƒ hen mounted on inch square copper board. 2

3 -I D, Drain-to-Source urrent (A) 00 0 S O BOOM µs ULS IDH 0. J = DS, Drain-to-Source oltage () -I D, Drain-to-Source urrent (A) 00 0 S O BOOM µs ULS IDH J = DS, Drain-to-Source oltage () Fig. ypical Output haracteristics Fig 2. ypical Output haracteristics % K + 6, u% 6, u% zu27.'9+6* ) )NI R DS(on), Drain-to-Source On Resistance (Normalized) I D = -9.2A S= J, Junction emperature ( ) Fig 3. ypical ransfer haracteristics Fig. Normalized On-Resistance s. emperature 3

4 ( R K R % % %KUU %UU %UU ) H/*< % KUU % IU % IF % FU *6' % UU % IF % % % UU FU IF - S, ate-to-source oltage () I D = -9.2A DS =-9.6 DS =-6 KNI , otal ate harge (n) Fig. ypical apacitance s. Drain-to-Source oltage Fig 6. ypical ate harge s. ate-to-source oltage -I SD, Reverse Drain urrent (A) 00 0 J = 0 J = 2 S = SD,Source-to-Drain oltage () -I I D, Drain urrent (A) 00 0 ORAION IN HIS ARA LIMID BY R DS(on) 00us ms 0ms A = 2 J = 0 Single ulse DS, Drain-to-Source oltage () Fig 7. ypical Source-Drain Diode Forward oltage Fig. Maximum Safe Operating Area

5 0.0 DS R D -I D, Drain urrent (A) , ase emperature ( ) 0% R S S ulse idth µs Duty Factor 0. % D.U.. S t d(on) t r t d(off) t f + - DD Fig 0a. Switching ime est ircuit Fig 9. Maximum Drain urrent s. ase emperature 90% DS Fig 0b. Switching ime aveforms 00 hermal Response (Z thja ) 0 D = SINL ULS Notes: (HRMAL RSONS). Duty factor D = t / t 2 2. eak J= DM x Z thja + A t, Rectangular ulse Duration (sec) DM t t2 Fig. Maximum ffective ransient hermal Impedance, Junction-to-Ambient

6 : KU U K + # ) )NI! : KU U # K # AS AS # AS "# " " gu 7 q Fig 2. ypical On-Resistance s. ate oltage Fig 3. ypical On-Resistance s. Drain urrent urrent Regulator Same ype as D.U.. 0KΩ 2.2µF.3µF S D D.U.. + DS - S -3mA harge I I D urrent Sampling Resistors Fig a. Basic ate harge aveform Fig b. ate harge est ircuit 6

7 I N NF J U J ) J ) + z# 9 Y 2 6, 6ORu% 6KOU Fig. ypical gs(th) s. Junction emperature Fig 6. ypical ower s. ime 7

8 SO- ackage Details ' % ',0,+(6 0, 0; 0,//,0(7(6 0, 0; ( + >@ F ' ( H %6, %6, H %6, %6, + ; H. / \ ƒ ƒ ƒ ƒ H.[ƒ \ ; >@ ;/ ;F >@ % 27(6 ',0(6,2,* 72/(,*3(60(<0 272//,*',0(6,20,//,0(7( ',0(6,26(6+2:,0,//,0(7(6>,+(6@ 27/,(2)20672-('(27/,(06 ',0(6,2'2(627,/'(02/'3276,26 02/'3276,262772(;(('>@ ',0(6,2'2(627,/'(02/'3276,26 02/'3276,262772(;(('>@ ',0(6,2,67+(/(*7+2)/(')262/'(,*72 6%677( >@ ;>@ )2273,7 ;>@ ;>@ SO- art Marking (;03/(7+,6,6,)026)(7,7(7,2/ (7,),( /2*2 <:: ;;;; ) '7(2'(<:: < /67',*,72)7+(<( :: :((. /272'( 370%(

9 ape and Reel RMINAL NUMBR 2.3 (. ).7 (.6 ). (.3 ) 7.9 (.32 ) FD DIRION NOS:. ONROLLIN DIMNSION : MILLIMR. 2. ALL DIMNSIONS AR SHON IN MILLIMRS(INHS). 3. OULIN ONFORMS O IA- IA (2.992) MAX. NOS :. ONROLLIN DIMNSION : MILLIMR. 2. OULIN ONFORMS O IA- IA-..0 (.66 ) 2.0 (. ) Data and specifications subject to change without notice. his product has been designed and qualified for the consumer market. ualification Standards can be found on IR s eb site. IR ORLD HADUARRS: 233 Kansas St., l Segundo, alifornia 902, USA el: (30) A Fax: (30) isit us at for sales contact information. 0/0 9

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)