N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

Transcription

1 and Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX These and devices are military qualified up to a JANTX level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers. JAN, JANTX, and JANTX qualifications are available per MIL-PRF-19500/555. RoHS compliant by design. High frequency operation. Lightweight, low-profile package. ESD rated to class 1A. APPLICATIONS / BENEFITS MAXIMUM T C = +25 C unless otherwise noted Parameters / Test Conditions Symbol alue Unit Junction & Storage Temperature T J, T stg -55 to +150 C Thermal Resistance Junction-to-Case (see Figure 1) R ӨJC 8.93 ºC/W Total Power Dissipation (1) P T 0.8 W Drain to Gate oltage 100 DG 200 Drain Source oltage Gate Source oltage GS ± 20 Drain Current, T C = +25 C (2) 4.5 I D1 A (see Figure?) 2.8 Drain Current, T C = +100 C Off-State Current (3) Source Current DS I D2 I DM A A (pk) Notes: 1. Derated linearly by 0.11 W/ C for T C > +25 C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. 3. I DM = 4 x I D1; I D1 as calculated in note 2. I S A U-18 LCC Package Also available in: TO-205AF Package (leaded) 2N6788 & 2N6790 MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 1 of 8

2 and MECHANICAL and PACKAGING CASE: Ceramic LCC-18 with kovar gold plated lid. TERMINALS: Gold plating over nickel. MARKING: Manufacturer's ID, part number, date code, ESD symbol at pin 1 location. TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6790 U Reliability Level JAN=JAN level JANTX=JANTX level JANTX=JANTX level Blank = Commercial Surface Mount package JEDEC type number Symbol I D I F T C DD DS GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. SYMBOLS & DEFINITIONS Definition T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 2 of 8

3 and ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Drain-Source Breakdown oltage GS = 0, I D = 1 ma (BR)DSS Gate-Source oltage (Threshold) DS GS, I D = 0.25 ma DS GS, I D = 0.25 ma, T j = +125 C DS GS, I D = 0.25 ma, T j = -55 C GS(th)1 GS(th)2 GS(th) Gate Current GS = ±20, DS = 0 GS = ±20, DS = 0, T j = +125 C I GSS1 I GSS2 ±100 ±200 na Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS Drain Current GS = 0, DS = 80 GS = 0, DS = 160 Drain Current GS = 0, DS = 80, T j = +125 C GS = 0, DS = 160, T j = +125 C Static Drain-Source On-State Resistance GS = 10, I D = 3.5 A pulsed GS = 10, I D = 2.25 A pulsed Static Drain-Source On-State Resistance GS = 10, I D = 6.0 A pulsed GS = 10, I D = 3.5 A pulsed Static Drain-Source On-State Resistance T j = +125 C: GS = 10, I D = 3.5 A pulsed GS = 10, I D = 2.25 A pulsed Diode Forward oltage GS = 0, I D = 6.0 A pulsed GS = 0, I D = 3.5 A pulsed I DSS1 25 µa I DSS ma r DS(on)1 r DS(on)2 r DS(on)3 SD Ω Ω Ω T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 3 of 8

4 and ELECTRICAL T A = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Gate to Source Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Gate to Drain Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Q g(on) Q gs Q gd nc nc nc SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Rinse time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Turn-off delay time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Fall time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Diode Reverse Recovery Time di/dt = 100 A/µs, DD 50, I F = 6.0 A di/dt = 100 A/µs, DD 50, I F = 3.5 A t d(on) 40 ns t r t d(off) t f t rr ns ns ns ns T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 4 of 8

5 and GRAPHS t 1, RECTANGULAR PULSE DURATION (SECONDS) Figure 1 Thermal Impedance Curves ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) THERMAL RESPONSE (ZӨJC) T C CASE TEMPERATURE ( C) T C CASE TEMPERATURE ( C) () () Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 5 of 8

6 and GRAPHS (continued) DS, DRAIN-TO-SOURCE OLTAGE (OLTS) Maximum Safe Operating Area () ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) DS, DRAIN-TO-SOURCE OLTAGE (OLTS) Maximum Safe Operating Area () T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 6 of 8

7 and PACKAGE DIMENSIONS Dimensions Ltr Inches Millimeters Min Max Min Max BL BW CH LL LL LS.050 BSC 1.27 BSC LS1.025 BSC BSC LS2.008 BSC BSC LW Q1.105 REF 2.67 REF Q2.120 REF 3.05 REF Q TL TW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 7 of 8

8 and PAD LAYOUT PAD ASSIGNMENTS T4-LDS , Rev. 1 (121482) 2012 Microsemi Corporation Page 8 of 8