Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 24 V GS = 20 V, T C = 100 C.
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1 V DS 12 V C2M812D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I 25 C R DS(on) 36 A 8 mω High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS Compliant Benefits TO Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters Battery Chargers Motor Drives Pulsed Power applications Part Number C2M812D Package TO Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 12 V V GS = V, I D = 1 μa V GSmax Gate - Source Voltage -1/+25 V Absolute maximum values V GSop Gate - Source Voltage -5/+2 V Recommended operational values I D Continuous Drain Current 36 V GS = 2 V, T C = 25 C Fig. 19 A 24 V GS = 2 V, T C = 1 C I D(pulse) Pulsed Drain Current 8 A Pulse width t P limited by T jmax Fig. 22 P D Power Dissipation 192 W T C =25 C, T J = 15 C Fig. 2 T J, T stg Operating Junction and Storage Temperature -55 to +15 C T L Solder Temperature 26 C 1.6mm (.63 ) from case for 1s M d Mounting Torque Nm lbf-in M3 or 6-32 screw 1 C2M812D Rev. C, 1-215
2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 12 V V GS = V, I D = 1 μa V GS(th) V V DS = V GS, I D = 5 ma Gate Threshold Voltage 2.1 V V DS = V GS, I D = 5 ma, T J = 15ºC Fig. 11 I DSS Zero Gate Voltage Drain Current 1 1 μa V DS = 12 V, V GS = V I GSS Gate-Source Leakage Current 25 na V GS = 2 V, V DS = V R DS(on) Drain-Source On-State Resistance 8 98 V GS = 2 V, I D = 2 A mω 128 V GS = 2 V, I D = 2A, T J = 15ºC Fig. 4, 5, 6 g fs Transconductance 8.1 V DS= 2 V, I DS= 2 A S 7.8 V DS= 2 V, I DS= 2 A, T J = 15ºC Fig. 7 C iss Input Capacitance 95 V GS = V Fig. 17, C oss Output Capacitance 8 pf V DS = 1 V 18 C rss Reverse Transfer Capacitance 7.6 f = 1 MHz E oss C oss Stored Energy 45 μj VAC = 25 mv Fig. 16 E AS Avalanche Energy, Single Pluse 1 J I D = 2A, V DD = 5V Fig. 29 E ON Turn-On Switching Energy 265 E OFF Turn Off Switching Energy 135 μj V DS = 8 V, V GS = -5/2 V, I D = 2A, R G(ext) = 2.5Ω, L= 142 μh Fig. 25 t d(on) Turn-On Delay Time 11 t r Rise Time 2 t d(off) Turn-Off Delay Time 23 t f Fall Time 19 ns V DD = 8 V, V GS = -5/2 V I D = 2 A, R G(ext) = 2.5 Ω, R L = 4 Ω, Timing relative to V DS Per IEC pg 83 Fig. 27 R G(int) Internal Gate Resistance 4.6 Ω f = 1 MHz, V AC = 25 mv Q gs Gate to Source Charge 15 Q gd Gate to Drain Charge 23 Q g Total Gate Charge 62 nc V DS = 8 V, V GS = -5/2 V I D = 2 A Per IEC pg 21 Fig. 12 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage 3.3 V V GS = - 5 V, I SD = 1 A 3.1 V V GS = - 5 V, I SD = 1 A, T J = 15 C Fig. 8, 9, 1 I S Continuous Diode Forward Current 36 A T C = 25 C Note 1 t rr Reverse Recover time 32 ns Q rr Reverse Recovery Charge 192 nc I rrm Peak Reverse Recovery Current 1 A Note (1): When using SiC Body Diode the maximum recommended V GS = -5V Thermal Characteristics V GS = - 5 V, I SD = 2 A, V R = 8 V dif/dt = 24 A/µs Note 1 Symbol Parameter Typ. Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case.6.65 R θja Thermal Resistance From Junction to Ambient 4 C/W Fig C2M812D Rev. C, 1-215
3 Typical Performance 7 6 T J = -55 C tp < 2 µs V GS = 18 V V GS = 2 V 7 6 tp < 2 µs V GS = 18 V V GS = 2 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V 1 V GS = 1 V Figure 1. Output Characteristics T J = -55 ºC Figure 2. Output Characteristics T J = 25 ºC T J = 15 C tp < 2 µs V GS = 16 V V GS = 18 V V GS = 2 V V GS = 14 V V GS = 12 V V GS = 1 V On Resistance, R DS On (P.U.) I DS = 2 A V GS = 2 V t p < 2 µs Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 15 ºC Figure 4. Normalized On-Resistance vs. Temperature V GS = 2 V t p < 2 µs I DS = 2 A t p < 2 µs On Resistance, R DS On (mohms) T J = 15 C T J = -55 C On Resistance, R DS On (mohms) V GS = 18 V V GS = 2 V V GS = 14 V V GS = 16 V Figure 5. On-Resistance vs. Drain Current For Various Temperatures Junction Temperature, T J ( C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 3 C2M812D Rev. C, 1-215
4 Typical Performance V DS = 2 V tp < 2 µs T J = 15 C T J = -55 C V GS = -5 V V GS = -2 V V GS = V Condition: T J = -55 C t p < 2 µs Gate-Source Voltage, V GS (V) Drain-Source Voltage, V DS (A) -6-7 Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC V GS = -5 V V GS = -2 V V GS = V Condition: t p < 2 µs V GS = -5 V V GS = -2 V V GS = V Condition: T J = 15 C t p < 2 µs Drain-Source Voltage, V DS (A) -7 Drain-Source Voltage, V DS (A) -7 Figure 9. Body Diode Characteristic at 25 ºC Figure 1. Body Diode Characteristic at 15 ºC Threshold Voltage, V th (V) Conditions V DS = 1 V GS V I DS =.5 5 ma ma Gate-Source Voltage, V GS (V) I DS = 2 A I GS = 1 ma V DS = 8 V Junction Temperature T J ( C) Gate Charge, Q G (nc) Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics 4 C2M812D Rev. C, 1-215
5 Typical Performance T J = -55 C tp < 2 µs V GS = V V GS = 5 V tp < 2 µs V GS = V V GS = 5 V -1 V GS = 2 V V GS = 1 V V GS = 15 V V GS = 2 V V GS = 15 V V GS = 1 V Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC T J = 15 C tp < 2 µs V GS = V V GS = 5 V V GS = 2 V V GS = 15 V V GS = 1 V Stored Energy, E OSS (µj) Drain to Source Voltage, V DS (V) Figure 15. 3rd Quadrant Characteristic at 15 ºC Figure 16. Output Capacitor Stored Energy 1 1 C iss V AC = 25 mv f = 1 MHz 1 1 C iss V AC = 25 mv f = 1 MHz Capacitance (pf) 1 C oss Capacitance (pf) 1 C oss C rss 1 1 C rss Figure 17. Capacitances vs. Drain-Source Voltage ( - 2V) Figure 18. Capacitances vs. Drain-Source Voltage ( - 1V) 5 C2M812D Rev. C, 1-215
6 Typical Performance Drain-Source Continous Current, I DS (DC) (A) T J 15 C Maximum Dissipated Power, P tot (W) T J 15 C Case Temperature, T C ( C) Case Temperature, T C ( C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Figure 2. Maximum Power Dissipation Derating vs. Case Temperature 1 1. Junction To Case Impedance, Z thjc ( o C/W).5.3 1E SinglePulse 1E-3.1 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, t p (s) Limited by R DS On 1 ms 1 µs T C = 25 C D =, Parameter: t p ms 1 µs Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area Switching Energy (uj) V DD = 8 V R G(ext) = 2.5 Ω V GS = -5/+2 V FWD = C4D112A L = 142 μh E Total E On Switching Energy (uj) V DD = 6 V R G(ext) = 2.5 Ω V GS = -5/+2 V FWD = C4D112A L = 142 μh E Total E On 2 E Off 2 E Off Drain to Source Current, I DS (A) Drain to Source Current, I DS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (V DD = 8V) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V DD = 6V) 6 C2M812D Rev. C, 1-215
7 Typical Performance Switching Loss (uj) V DD = 8 V I DS = 2 A V GS = -5/+2 V FWD = C4D112A L = 142 μh E Total E On E Off Swithcing Loss (uj) E Total E On E Off I DS = 2 A V DD = 8 V R G(ext) = 2.5 Ω V GS = -5/+2 V FWD = C4D112A L = 142 µh External Gate Resistor RG(ext) (Ohms) Junction Temperature, T J ( C) Figure 25. Clamped Inductive Switching Energy vs. R G(ext) Figure 26. Clamped Inductive Switching Energy vs. Temperature V DD = 8 V R L = 4 Ω V GS = -5/+2 V t r t f Time (ns) 4 3 t d (off) 2 t d (on) External Gate Resistor, R G(ext) (Ohms) Figure 27. Switching Times vs. R G(ext) Figure 28. Switching Times Definition 35 3 Conditons: V DD = 5 V Avalanche Current (A) Time in Avalanche T AV (us) Figure 29. Single Avalanche SOA curve 7 C2M812D Rev. C, 1-215
8 Test Circuit Schematic V DC C DC =42.3 uf L=142 uh D 1 C4D112A 1A, 12V SiC Schottky Q 2 R G D.U.T C2M812D Figure 3. Clamped Inductive Switching Waveform Test Circuit Q 1 V DC C DC =42.3 uf L=142 uh V GS= - 5V R G D.U.T C2M812D Q 2 R G C2M812D Figure 31. Body Diode Recovery Test Circuit ESD Ratings ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1V 2 (>2V) ESD-MM All Devices Passed 4V C (>4V) ESD-CDM All Devices Passed 1V IV (>1V) 8 C2M812D Rev. C, 1-215
9 T V Package Dimensions Package TO Recommended Solder Pad Layout U W Pinout Information: Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Inches Millimeters POS Min Max Min Max A A A b b b b b c D D D E E E E E e.214 BSC 5.44 BSC N 3 3 L L ØP Q S T U V W Part Number Package Marking C2M812D TO C2M812 TO C2M812D Rev. C, 1-215
10 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links C2M PSPICE Models: SiC MOSFET Isolated Gate Driver reference design: SiC MOSFET Evaluation Board: Copyright 215 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: C2M812D Rev. C, 1-215
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Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
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IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
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Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
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OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
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Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
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OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
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SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
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2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified
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Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
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Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
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BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
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BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
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OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
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SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
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BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (
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Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
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