C2D20120D Silicon Carbide Schottky Diode Zero Recovery Rectifier
|
|
- Piers Cunningham
- 5 years ago
- Views:
Transcription
1 C2D212D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 29 A ** Q c = 122 nc ** Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Package TO Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C2D212D TO C2D212 Maximum Ratings (=25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 12 V V DC DC Blocking Voltage 12 V Continuous Forward Current (Per Leg/Device) 31/ /29 1/2 A =25 C =135 C =152 C RM Repetitive Peak Forward Surge Current 5 * A =25 C, t P =8.3 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge Current 25 * A =25 C, t P =1 µs, Pulse P tot Power Dissipation (Per Leg/Device) 312/ /27 W =25 C =11 C T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-247 Mounting Torque Nm lbf-in M3 Screw 6-32 Screw * Per Leg, ** Per Device 1 C2D212D Rev. H
2 Forward Current (A) I R Reverse Current (μa) Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current Q C Total Capacitive Charge 61 nc C Total Capacitance V μa pf = 1 A T J =25 C = 1 A T J =175 C = 12 V T J =25 C = 12 V T J =175 C = 12 V, = 1A di/dt = 5 A/μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = 4 V, T J = 25 C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case.48 **.24 * C/W ** Per Leg, * Both Legs Typical Performance (Per Leg) V F Forward Voltage (V) Reverse Voltage (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C2D212D Rev. H
3 C Capacitance (pf) (AVG) Forward Current (A) (PEAK) Peak Forward Current (A) Typical Performance % Duty* 2% Duty* 3% Duty* 5% Duty* 7% Duty* DC Power Dissipation (W) P Tot (W) Case Temperature ( C) * Frequency > 1KHz Tc Case Temperature ( C) C Figure 3. Current Derating Figure 4. Power Derating Reverse Voltage (V) Figure 5. Capacitance vs. Reverse Voltage 3 C2D212D Rev. H
4 4 C2D212D Rev. H Figure 6. Transient Thermal Impedance
5 Package Dimensions Package TO CC W Y X Z BB AA Inches Millimeters POS Min Max Min Max A B C D E F G.215 TYP 5.46 TYP H J K L M N P Q R S T U V W X Y Z AA BB CC Recommended Solder Pad Layout Part Number Package Marking C2D212D TO C2D212 TO Note: Recommended soldering profiles can be found in the applications note here: 5 C2D212D Rev. H
6 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 213 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: C2D212D Rev. H
C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward
More informationC2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =13) = 9 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationZ-Rec Rectifier. C4D08120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications
C4D812 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 11 Q c = 37 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationC3D04065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward
More informationC5D05170H Silicon Carbide Schottky Diode Z-Rec Rectifier
C5D517H Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 17 V I F, ( =135 C) = 8.8 A Q c = 69 nc Features Package 1.7kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationC3D08065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D865 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 11 Q c = 2 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D16065D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1665D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
More informationC3D04060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)
C3DF Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) Features -Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
More informationE4D20120A. Silicon Carbide Schottky Diode E-Series Automotive. Features. Package. Benefits. Applications. Maximum Ratings (T C V DS 900 V I D 11.
E4D1A Silicon Carbide Schottky Diode E-Series Automotive V DS I D @ 25 C R DS(on) 9 V 11.5 A 28 mω Features Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency
More informationC2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
Datasheet: 2D112 Rev. D 2D112A Silicon arbide Schottky Diode Zero Recovery Rectifier RM = 12 V = 1 A Q c = 61 n Features 12-Volt Schottky Rectifier Zero Reverse Recovery urrent Zero Forward Recovery Voltage
More informationC3D02060E Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D6E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationGC15MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationGAP3SLT33-220FP 3300 V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 3300 V I F (Tc 125 C) = 0.3 A Q C = 3 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationGB2X100MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationPackage. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.
C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low
More informationPackage TO Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 6 V GS = 20 V, T C = 100 C.
V DS 1 V CM1D Silicon Carbide Power MOSFET CM TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 5 C R DS(on) 1 A mω High Blocking Voltage with Low On-Resistance High Speed Switching
More informationPackage. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.
C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance
More informationPackage. Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 24 V GS = 20 V, T C = 100 C.
V DS 12 V C2M812D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 36 A 8 mω High Blocking Voltage with Low On-Resistance High Speed
More informationGB01SLT V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 160 C) = 1 A Q C = 4 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationPackage TO Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 40 V GS = 20 V, T C = 100 C.
V DS 2 V C2M42D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 6 A 4 mω High Blocking Voltage with Low On-Resistance High Speed Switching
More informationPackage TO Symbol Parameter Value Unit Test Conditions Note. V GS =20 V, T C = 25 C Fig. 19 A 60 V GS =20 V, T C = 100 C.
V DS 2 V C2M252D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 9 A 25 mω High Blocking Voltage with Low On-Resistance High Speed
More informationPackage. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
More informationGC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationChip Outline. Symbol Parameter Value Unit Test Conditions Note 36 A 27 V GS = 20 V, T C = 100 C. -55 to +175
CPM2-12-8B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 12 V 36 A 8 mω Features Chip Outline High Blocking Voltage with Low On-Resistance High
More informationChip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 12.5 V GS = 20 V, T C = 100 C.
V DS 12 V CPM2-12-16B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Chip Outline I D @ 2 C R DS(on) 19 A 16 mω New C2M SiC MOSFET technlogy High Blocking Voltage
More informationPackage. Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 40 V GS = 15 V, T C = 100 C.
C3M39K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 63 A 3 mω C3M TM SiC MOSFET technology Optimized package with separate
More informationPackage. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22.5 V GS = 15 V, T C = 100 C.
C3M651J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 1 V 35 A 65 mω C3M TM SiC MOSFET technology Low parasitic inductance with
More informationPackage. TAB Drain S S G. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 13.5 V GS = 15 V, T C = 100 C
C3M121K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 1 V 22 A 12 mω C3M TM SiC MOSFET technology Optimized package with separate
More informationChip Outline. Symbol Parameter Value Unit Test Conditions Note V GS =20 V, T C = 25 C A 71 V GS =20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-25B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 98 A 25 mω Features Chip Outline High Blocking Voltage with Low On-Resistance
More informationPackage. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 19.7 V GS = 15 V, T C = 100 C.
C3M7512K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 12 V 3 A 75 mω C3M TM SiC MOSFET technology Optimized package with separate
More informationChip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 46 V GS = 20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-4B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 63 A 4 mω Features Chip Outline C2M SiC MOSFET technlogy High Blocking Voltage
More informationCID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
More informationCAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse
More informationCAS300M17BM2 1.7kV, 8.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A, 1 C R DS(on) 1.7 kv 23 mj 8. mω Features Ultra Low Loss
More informationGSID040A120B1A3 IGBT Dual Boost Module
IGBT Dual Boost Module Features: High efficiency dual boost Ultrafast switching frequency Low Inductance Layout Lead Free, Compliant with RoHS Requirement Application: Solar inverter Bypass Diode Maximum
More informationCAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode
Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss
More informationCCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M12CM2 1.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
More informationCCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
More informationGSID300A120S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with
More informationGSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:
IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS
More informationGHIS075A120T2P2 Si IGBT/ SiC SBD PIM Module
Si IGBT/ SiC SBD PIM Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C =75A, T C =25 Low Switching Loss SiC SBD for boost diode: V F = 1.7V @ I F = 5A, T C =25 1%
More informationCCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
More information1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C
CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current
More informationGCMS020A120B1H1 1200V 20 mohm SiC MOSFET Module
1200V 20 mohm SiC MOSFET Module Features: Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation
More informationGSID300A125S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance
More informationI F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationI F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs
High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge
More informationcase T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationcase TO 252 T C = 25 C, t P = 10 ms 18
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationT C = 25 C, t P = 10 ms 2
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of V F Fast switching
More informationFFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.
FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge
More informationFFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
More informationIndustrial motor drives 175 C maximum operating junction temperature
Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
More informationFFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.
FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery
More informationFFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.
FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDY10S120
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.1, 2011-05-25 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationV20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationV30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationHigh Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00
More informationSilicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features 1200 V Schottky rectifier 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDV05S60C
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.0, 2010-01-08 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More information3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationSilicon Carbide Schottky Diode IDW30G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode IDW3G12C5B Final Datasheet Rev. 2.1 217721 Industrial Power Control IDW3G12C5B CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationHigh-Voltage Schottky Rectifier
High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability
More informationFFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes
More informationIDW10G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon Carbide No reverse
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationParameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC
IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationIndustrial motor drives 175 C maximum operating junction temperature
Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
More informationHyperfast Rectifier, 1 A FRED Pt
Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low
More informationProduct family data sheet
Cree XLamp XP-L LEDs Product family data sheet CLD-DS97 Rev 1B Product Description The XLamp XP-L LED is the highest performing discrete in Cree s High-Density (HD) class of LEDs, delivering the next generation
More informationFFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A
FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationHigh Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
More information2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height
More informationSiC. Silicon Carbide Diode. 1200V SiC Schottky Diode IDW 1 0 S Rev. 2.0,< >
SiC Silicon Carbide Diode thinq! TM SiC Schottky Diode 12V SiC Schottky Diode IDW 1 S 1 2 Final Datasheet Rev. 2., Power Management & Multimarket thinq! SiC Schottky Diode 1 Description The 12V
More informationSTTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features
STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters
More informationSmall Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50
More informationFFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A
FFSH212ADN-F85 Silicon Carbide Schottky Diode 12 V, 2 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationCree XLamp XP-C LEDs. Table of Contents. CLD-DS19 Rev 12B. Product family data sheet
Cree XLamp XP-C LEDs Product family data sheet CLD-DS19 Rev 12B Product Description The XLamp XP-C LED combines the proven lighting-class performance and reliability of the XLamp XR-E LED in a package
More informationProduct family data sheet
Cree XLamp XR-C LEDs Product family data sheet CLD-DS1 Rev 12 Product Description FEATURES Table of contents www.cree.com/xlamp The XLamp XR-C LED gives lighting designers the flexibility and performance
More informationPSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET
Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationSTPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery
Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C
More information