GSID300A125S5C1 6-Pack IGBT Module
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1 6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance AlN DBC substrate for better thermal conductivity Lead Free, Compliant with RoHS Requirement Applicatio: High Power Converters Motor Drivers UPS Systems IGBT, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V CES Collector-Emitter Blocking Voltage 125 V V GES Gate-Emitter Voltage ±2 V I C Continuous Collector Current T C = 8 3 A T C = 25 6 A I CM(1) Peak Collector Current Repetitive T J = A t SC Short Circuit Withstand Time >1 μs P D Maximum Power Dissipation per IGBT T C = 25 T Jmax = W Page 1 of 9 Rev..1 3/3/217
2 Electrical Characteristics of IGBT (T C =25 unless otherwise specified) Static characteristics Symbol Preliminary Data Sheet Description Conditio Min Typ Max Unit V GE(th) Gate-Emitter Threshold Voltage I C = 2 ma, V CE = V GE V V CE(sat) I CES I GES Collector-Emitter Saturation Voltage Collector-Emitter Leakage Current Gate-Emitter Leakage Current I C =3A, V GE = 15V T J = V T J = V V GE = V, V CE = V CES, T J = 25 V GE = ±2V, V CE = V, T J = 25 V 1 ma 4 na R G_INT Internal Gate Resistance TBD Ω C ies Input Capacitance V CE = 25V, V GE = V, 3.8 nf C oes Output Capacitance f =1MHz 2.6 nf C res Reverse Trafer Capacitance 1.43 nf Switching Characteristics T J = t d(on) Turn-on Delay Time T J = T J = t r Rise Time T J = t d(off) Turn-off Delay Time V CC = 75V,I C = 3A, R G = 1Ω,V GE = ±15V, Inductive Load T J = T J = T J = t f Fall Time T J = T J = E on Turn-on Switching Loss T J = mj Page 2 of 9 Rev..1 3/3/217
3 T J = E off Turn-off Switching Loss T J = mj V CC = 75V,I C = 3A, R G = 1Ω,V GE = ±15V, Inductive Load T J = Q g Total Gate Charge T J = nc RBSOA SCSOA Reverse Bias Safe Operation Area Short Circuit Safe Operation Area I C =6A,V CC =15V,Vp=12V, Rg = 1Ω, V GE =+15V to V, T J =15 C V CC < 75V, V GE = 15V, Trapezoid 1 μs R θjc IGBT Thermal Resistance: Junction-To-Case.6 /W Diode, Inverter Maximum Rated Values (T C =25 unless otherwise specified) V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 3 A I FM Repetitive Peak Forward Current 6 A Electrical Characteristics of FWD (T C =25 unless otherwise specified) Symbol Description Conditio Min Typ Max Unit T J = V FM Forward Voltage I F = 3A, V GE = V T J = V T J = t rr Reverse Recovery Time T J = I rr Peak Reverse Recovery Current I F =3A, di/dt =1213A/μs, V rr = 75V, V GE = -15V T J = T J = A Q rr Reverse Recovery Charge T J = µc Page 3 of 9 Rev..1 3/3/217
4 T J = T J = E rec Reverse Recovery Energy T J = mj R θjc Diode Thermal Resistance: Junction-To-Case.99 /W Internal NTC-Thermistor Characteristics Symbol Description Min Typ Max Unit R 25 T C =25 5 kω R/R T C =1,R 1 =481Ω ±5 % P 25 T C =25 5 mw B 25/5 R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 338 K B 25/8 R 2 =R 25 exp[b 25/8 (1/T 2-1/(298.15K))] 344 K Module Symbol Description Min Typ Max Unit V iso Isolation Voltage(All Terminals Shorted) f = 5Hz, 1minute 25 V T J Maximum Junction Temperature 175 T JOP Maximum Operating Junction Temperature Range T stg Storage Temperature R θcs Case-To-Sink (Conductive Grease Applied).2 /W M Mounting Screw:M N m M Power Terminals Screw: M N m G Weight 39 g Base plate: Copper, Isolation substrate: AlN Page 4 of 9 Rev..1 3/3/217
5 6 5 VGE=15V Tj=25 Tj= Tj=125 VGE=9V VGE=11V VGE=13V VGE=15V VGE=17V 4 4 IC(A) 3 IC(A) VCE(V) VCE(V) Fig.1 Typical Saturation Voltage Characteristics Fig.2 Typical Output Characteristics 6 Tj=25 Tj=125 1 Rtyp IF(A) 3 R(Kohm) VF(V) TC( ) Fig.3 Forward Characteristics of FWD Fig.4 NTC Temperature Characteristics Page 5 of 9 Rev..1 3/3/217
6 VCC = 75V,RG = 1Ω VGE = ±15V,TJ=125 Eon Eoff Erec 12 1 VCC = 75V,IC = 3A VGE = ±15V,TJ=125 Eon Eoff Erec 8 8 E(mJ) 6 E(mJ) IC(A) Fig.5 Typical Switching Loss vs. Collector Current RG(Ω) Fig.6 Typical Switching Loss vs. Gate Resistance.6 IGBT.1 Diode.5.8 RθJC( /W) RθJC( /W) E-5 1E-4 1E time(s) Fig.7 Traient Thermal Impedance (IGBT). 1E-5 1E-4 1E time(s) Fig.8 Traient Thermal Impedance (Diode) Page 6 of 9 Rev..1 3/3/217
7 6 4 IC(A) 2 TJ=125 Module Chip VCES(V) Fig.9 Reverse Bias Safe Operation Area (RBSOA) Page 7 of 9 Rev..1 3/3/217
8 Internal Circuit Package Outline (Unit: mm): Page 8 of 9 Rev..1 3/3/217
9 Revision History Date Revision Notes 3/3/217.1 Initial release of preliminary datasheet. Global Power Technologies Group 2692 Prism Place Lake Forest, CA 9263 TEL (949) FAX (949) Web site: Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented March, 213. RoHS Declaratio for this product can be obtained from the Product Documentation sectio of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to iure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applicatio implanted into the human body nor in applicatio in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, correctio, modificatio, and improvements of datasheet without notice. Page 9 of 9 Rev..1 3/3/217
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tentative X2PT IGBT Module 6-Pack + NTC MIXG120W1200TEH V CES = 1200 V I C25 = 186 A V CE(sat) = 1.7 V tentative Part number MIXG120W1200TEH
X2PT IGBT Module CES = 1200 I C2 = 18 CE(sat) = 1.7 -Pack + NTC Part number MIXG120W1200TEH 31 32 4,, NTC 1 2 9, 0, 1 Features / dvantages: X2PT - 2nd generation Xtreme light Punch Through Tvjm = 17 Easy
D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7
MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the
Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units
Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse
CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
CAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse
Converter - Inverter Module NPT IGBT
dvanced Technical Information MI15WDTMH Converter - Inverter Module NT IGBT Single hase Rectifier Three hase Inverter RRM = 1 CES = I DM5 = 5 I C5 = 3 I FSM = 55 CE(sat) =.1 art name (Marking on product)
C3D04065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward
IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D5 7 9 3 5 9 D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter
IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology
C3D08065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D865 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 11 Q c = 2 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
STARPOWER IGBT GD40PIK120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMIONDUTOR IGBT GD4PIK125S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
IRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
T1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW
MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode
Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss
T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3
GC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A
VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
Converter - Brake - Inverter Module XPT IGBT
MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name
Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
Converter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW35-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 1600 CES = 600 CES = 600 I DM25 = 130 I C25 = 25 I C25 =
ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A
VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
Converter - Brake - Inverter Module XPT IGBT
MIXWB2TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = 2 Three Phase Inverter CES = 2 I DM = 25 25 = 25 = 2 I FSM = CE(sat) =. CE(sat) =. Part name (Marking
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
Converter - Brake - Inverter Module (CBI 1) NPT IGBT
MUBW20-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper RRM = 1600 CES = 600 CES Three Phase Inverter = 600 I DM25 = 95 I C25 = 12 I C25 =
< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING
Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.