CAS300M17BM2 1.7kV, 8.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode

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Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A, 1 C R DS(on) 1.7 kv 23 mj 8.

Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced

1 Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, 3A, 1 C R DS(on) 1.7 kv 23 mj 8. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Package 62mm x 16mm x 3mm Applications HF Resonant Converters/Inverters Solar and Wind Inverters UPS and SMPS Motor Drive Traction Part Number Package Marking CAS3M17BM2 Half-Bridge Module CAS3M17BM2 Maximum Ratings (T C = 2 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DSmax Drain - Source Voltage 1.7 kv V GSmax Gate - Source Voltage -1/+2 V Absolute maximum values V GSop Gate - Source Voltage -/2 V Recommended operational values I D Continuous MOSFET Drain Current 32 V GS = 2 V, T C = 2 C A 22 V GS = 2 V, T C = 9 C Fig. 26 I D(pulse) Pulsed Drain Current 9 A Pulse width tp limited by T J(max) I F Continuous Diode Forward Current 6 V GS = - V, T C = 2 C A 33 V GS = - V, T C = 9 C T Jmax Junction Temperature -4 to +1 C T C,T STG Case and Storage Temperature Range -4 to +12 C V isol Case Isolation Voltage. kv AC, Hz, 1 min L Stray Stray Inductance 1 nh Measured between terminals 2 and 3 P D Power Dissipation 176 W T C = 2 C, T J = 1 C Fig. 2 Subject to change without notice. 1

2 Electrical Characteristics (T C = 2 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V DSS Drain - Source Blocking Voltage 1.7 kv V GS, =, I D = 2 ma V GS(th) Gate Threshold Voltage V V D = V G, ID = 1 ma Fig. 7 I DSS Zero Gate Voltage Drain Current 7 2 μa V DS = 1.7 kv, V GS = 1 4 μa V DS = 1.7 kv,v GS =, T J = 1 C I GSS Gate-Source Leakage Current 1 6 na V GS = 2 V, V DS = R DS(on) g fs On State Resistance Transconductance C iss Input Capacitance 2 C oss Output Capacitance 2. C rss Reverse Transfer Capacitance.8 E on Turn-On Switching Energy 13. mj E Off Turn-Off Switching Energy 1. mj 8. 1 mω VGS = 2 V, IDS = 3 A Fig. 4, V GS = 2V, I DS = 3 A,T J = 1 C, V DS = 2 V, IDS = 3 A 131 S V DS = 2 V, ID = 3 A, T J = 1 C nf V DS = 1 kv, f = 2 khz, V AC = 2 mv V DD = 9 V, V GS = -V/+2V I D = 3 A, R G(ext) = 2. Ω Load = 77 μh, T J = 1 C Note: IEC Definitions R G (int) Internal Gate Resistance 3.7 Ω f = 1 MHz, V AC = 2 mv Q GS Gate-Source Charge 273 Q GD Gate-Drain Charge 324 Q G Total Gate Charge 176 nc V DD= 9 V, V GS = -V/+2V, I D= 3 A, Per JEDEC24 pg 27 Fig. 8 Fig. 16, 17 Fig. 22 Fig. 1 t d(on) Turn-on delay time 1 ns V DD = 9V, V GS = -/+2V, I D = 3 A, R G(ext) = 2. Ω, t r Rise Time 72 ns Timing relative to V DS Fig. 23 t d(off) Turn-off delay time 211 ns Note: IEC , pg 83 t f Fall Time 6 ns Inductive load I F = 3 A, V GS = Fig. 1 V SD Diode Forward Voltage V I F = 3 A, V GS =, T J = 1 C Fig. 11 I Q C Total Capacitive Charge 4.4 μc SD = 3 A, V DS = 9 V, T J = 2 C, di SD /dt = 9 ka/μs, V GS = - V Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET Fig. 27 C/W R thjcd Thermal Resistance Juction-to-Case for Diode.6.6 Fig. 28 Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 3 g M Mounting Torque Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal Creepage Distance 3 mm Terminal to terminal 4 mm Terminal to baseplate 2 CAS3M17BM2,Rev. A

3 V GS = 2 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V V GS = 2 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V 1 T J = -4 C t p = 2 µs T J = 2 C t p = 2 µs Figure 1. Output Characteristics T J = -4 C Figure 2. Output Characteristics T J = 2 C V GS = 14 V V GS = 16 V V GS = 18 V V GS = 2 V V GS = 12 V V GS = 1 V T J = 1 C t p = 2 µs On Resistance, R DS On (p.u.) I DS = 22 A V GS = 2 V t p = 2 µs Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 1 C Figure 4. Normalized On-Resistance vs. Temperature On-Resistance, R DS ON (mω) T j = 1 C T j = 2 C T j = -4 C V GS = 2 V t p = 2 µs On Resistance, R DS On (mω) I DS = 22 A t p = 2 µs V GS = 16 V V GS = 2 V V GS = 14 V V GS = 12 V V GS = 18 V Junction Temperature, T J ( C) Figure. On-Resistance vs. Drain Current For Various Temperatures Figure 6. On-Resistance vs. Temperature for Various Gate-Source Voltage 3 CAS3M17BM2,Rev. A

4 Threshold Voltage, V th (V) Conditons V GS = V DS I DS = 18 ma V DS = 2 V tp < 2 µs T J = 1 C T J = -4 C Junction Temperature T J ( C) Gate-Source Voltage, V GS (V) Figure 7. Threshold Voltage vs. Temperature Figure 8. Transfer Characteristic for Various Junction Temperatures V GS = - V V GS = V V GS = -2 V V GS = -2 V V GS = V T J = -4 C t p = 2 µs - -6 V GS = - V T J = 2 C t p = 2 µs - -6 Figure 9. Diode Characteristic at -4 C Figure 1. Diode Characteristic at 2 C V GS = - V V GS = V V GS = -2 V V GS = V V GS = V V GS = 1 V V GS = 1 V V GS = 2 V T J = 1 C t p = 2 µs - -6 T J = -4 2 C t p = 2 µs - -6 Figure 11. Diode Characteristic at 1 C Figure rd Quadrant Characteristic at -4 C 4 CAS3M17BM2,Rev. A

5 V GS = V V GS = V V GS = 1 V V GS = 2 V V GS = 1 V V GS = 1 V V GS = V V GS = V V GS = 2 V V GS = 1 V T J = 2 C t p = 2 µs - T J = 2 1 C t p = 2 µs Figure rd Quadrant Characteristic at 2 C Figure rd Quadrant Characteristic at 1 C Gate-Source Voltage, V GS (V) I DS =3A I GS = 1 ma V DS = 9 V Capacitance (nf) C iss C oss C rss V AC = 2 mv f = 2 khz Gate Charge, Q G (nc) Drain-Source Voltage, V DS (V) Figure 1. Gate Charge Characteristics Figure 16. Capacitances vs. Drain-Source Voltage ( - 2 V) 1 1 C iss V AC = 2 mv f = 2 khz Capacitance (nf) 1.1 C oss C rss Stored Energy, E OSS (mj) Drain-Source Voltage, V DS (V) Drain to Source Voltage, V DS (V) Figure 17. Capacitances vs. Drain-Source Voltage ( - 1 kv) Figure 18. Output Capacitor Stored Energy CAS3M17BM2,Rev. A

6 2 2 V DD = 9 V R G(ext) = 2. Ω V GS = -/+2 V L = 77 μh E Total V DD = 12 V R G(ext) = 2. Ω V GS = -/+2 V L = 77 μh E Total Switching Loss (mj) 1 1 E On E Off Switching Loss (mj) E On E Off Drain to Source Current, I DS (A) Drain to Source Current, I DS (A) Figure 19. Inductive Switching Energy vs. Drain Current For V DS = 9V, R G = 2. Ω Figure 2. Inductive Switching Energy vs. Drain Current For V DS = 12 V, R G = 2. Ω Switching Loss (mj) V DD = 9 V I DS =3 A V GS = -/+2 V L = 77 μh E Total External Gate Resistor RG(ext) (Ohms) E On E Off Switching Loss (mj) V DD = 9 V R G(ext) = 2. Ω I DS =3 A V GS = -/+2 V L = 77 μh E Total E On E Off Junction Temperature, T J ( C) Figure 21. Inductive Switching Energy vs. R G(ext) Figure 22. Inductive Switching Energy vs. Temperature V DD = 9 V I DS = 3 A V GS = -/+2 V Time (ns) 8 6 t d (off) 4 t d (on) 2 t r t f External Gate Resistor, R G(ext) (Ohms) Figure 23. Timing vs. R G(ext) Figure 24. Resistive Switching Time Description 6 CAS3M17BM2,Rev. A

7 Maximum Dissipated Power, P tot (W) T J 1 C Drain-Source Continous Current, I DS (DC) (A) T J 1 C Figure 2. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 1E Case Temperature, T C ( C) Case Temperature, T C ( C) Figure 26. Continous Drain Current Derating vs Case Temperature 1E-3 Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E Time, t p (s) Figure 27. MOSFET Junction to Case Thermal Impedance 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E Time, t p (s) Figure 28. Diode Junction to Case Thermal Impedance 1. 1 µs Limited by R DS On 1 µs ms 1. T C = 2 C D =, Parameter: t p Drain-Source Voltage, V DS (V) 1 ms Figure 29. Safe Operating Area 7 CAS3M17BM2,Rev. A

8 Schematic Package Dimensions (mm) CAS3M17BM2 8 CAS3M17BM2,Rev. A

9 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/6/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright 214 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: CAS3M17BM2 Rev. A

CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode

CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss