Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V CE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G C E n-channel C PD - 97A V CES = 6V I C = A, T C = C t sc > 5µs, T jmax = 5 C V CE(on) typ. =.35V Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low V CE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI TO-2AB Full-Pak G CE G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 6 V I T C = 25 C Continuous Collector Current I T C = C Continuous Collector Current I CM Pulsed Collector Current I LM Clamped Inductive Load Current c A I C =25 C Diode Continuous Forward Current I C = C Diode Continuous Forward Current I FM Diode Maximum Forward Current d V GE Continuous Gate-to-Emitter Voltage ± V Transient Gate-to-Emitter Voltage ± P T C =25 C Maximum Power Dissipation 3 W P T C = C Maximum Power Dissipation 7 T J Operating Junction and C -55 to + 5 T STG Storage Temperature Range Soldering Temperature, for seconds (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT e 2.9 R θjc Junction-to-Case - Diode e.6 C/W R θcs Case-to-Sink, flat, greased surface.5 R θja Junction-to-Ambient, typical socket mount e 65 Wt Weight 2. g //9

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V,I c = μa f ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.75 V/ C V GE = V, I c = 25 μa ( o C ) f I C = A, V GE = 5V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage.53 V I C = A, V GE = 5V, T J = 5 C.5 I C = A, V GE = 5V, T J = 5 C V GE(th) Gate Threshold Voltage. 6.5 V V CE = V GE, I C = 5 μa ΔV GE(th) /ΔTJ Threshold Voltage temp. coefficient -5 mv/ C V CE = V GE, I C =.ma ( 25-5 o C ) gfe Forward Transconductance S V CE = 5V, I C = A, PW =μs I CES μa V GE = V,V CE = 6V Collector-to-Emitter Leakage Current 55 μa V GE = v, V CE = 6V, T J =5 C V FM Diode Forward Voltage Drop V I F = A.33 I F = A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ± V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = A Q ge Gate-to-Emitter Charge (turn-on). nc V CC = V Q gc Gate-to-Collector Charge (turn-on) 3 23 V GE = 5V E on Turn-On Switching Loss I C = A, V CC = V, V GE = 5V E off Turn-Off Switching Loss 23 3 μj R G = 22Ω, L=mH, L S = 5nH, T J = 25 C E total Total Switching Loss Energy losses include tail and diode reverse recovery t d(on) Turn-On delay time 37 6 I C = A, V CC = V t r Rise time 26 ns R G = 22Ω, L=mH, L S = 5nH t d(off) Turn-Off delay time 9 T J = 25 C t f Fall time E on Turn-On Switching Loss 3 I C = A, V CC = V, V GE = 5V E off Turn-Off Switching Loss 3 μj R G = 22Ω, L=mH, L S = 5nH, T J = 5 C E total Total Switching Loss 59 Energy losses include tail and diode reverse recovery t d(on) Turn-On delay time 35 I C = A, V CC = V t r Rise time 9 ns R G = 22Ω, L=mH, L S = 5nH t d(off) Turn-Off delay time 3 T J = 5 C t f Fall time 5 C ies Input Capacitance 5 V GE = V C oes Output Capacitance 9 pf V CC = V C res Reverse Transfer Capacitance f = Mhz T J = 5 C, I C = A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = V, Vp =6V Rg = 22Ω, V GE = +5V to V SCSOA Short Circuit Safe Operating Area 5 μs V CC = V, Vp =6V R G = 22Ω, V GE = +5V to V Erec Reverse recovery energy of the diode 2 μj T J = 5 o C trr Diode Reverse recovery time 6 ns V CC = V, I F = A Irr Peak Reverse Recovery Current A V GE = 5V, Rg = 22Ω, L=mH, L S =5nH Notes: V CC = % (V CES ), V GE = 5V, L = 2 μh, R G = 22 Ω. Pulse width limited by max. junction temperature. ƒr θ is measured at T J approximately 9 C Refer to AN-6 for guidelines for measuring V (BR)CES safely 2

3 I CE (A) I CE (A) I C (A) I C A) I C (A) P tot (W) T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature μs μs ms. DC. Fig. 3 - Forward SOA, T C = 25 C; T J 5 C Fig. - Reverse Bias SOA T J = 5 C; V CE = 5V V GE = V VGE = 5V VGE = V VGE = V VGE =.V V GE = V V GE = 5V V GE = V V GE = V V GE =.V Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp <6μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp < 6μs 3

4 I CE (A) I CE (A) I F (A) 6 V GE = V VGE = 5V VGE = V VGE = V VGE =.V 5 - C 25 C 5 C V F (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 5 C; tp < 6μs Fig. - Typ. Diode Forward Characteristics tp < 6μs 6 I CE = 5.5A I CE = A I CE = 22A 6 I CE = 5.5A I CE = A I CE = 22A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = 25 C 6 I CE = 5.5A I CE = A I CE = 22A 2 T J = - C T J = 25 C T J = 5 C V GE (V) V GE (V) Fig. - Typical V CE vs. V GE T J = 5 C Fig. - Typ. Transfer Characteristics V CE = 5V; tp < 6μs

5 I RR (A) I RR (A) Energy (μj) Swiching Time (ns) Swiching Time (ns) 7 Energy (μj) 6 5 E OFF td OFF t F E ON td ON t R 2 I C (A) 2 I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = 5 C; L = mh; V CE = V, R G = 22Ω; V GE = 5V. 5 E OFF Fig. - Typ. Switching Time vs. I C T J = 5 C; L=mH; V CE = V R G = 22Ω; V GE = 5V td OFF E ON td ON t R t F Fig. 5 - Typ. Energy Loss vs. R G T J = 5 C; L = mh; V CE = V, I CE = A; V GE = 5V R G (Ω) R G (Ω) Fig. - Typ. Switching Time vs. R G T J = 5 C; L=mH; V CE = V I CE = A; V GE = 5V R G = Ω R G = 22 Ω R G = 7 Ω R G = Ω 2 I F (A) R G (Ω) Fig. 7 - Typical Diode I RR vs. I F T J = 5 C Fig. - Typical Diode I RR vs. R G T J = 5 C; I F = A 5

6 Capacitance (pf) V GE (V) Energy (μj) I RR (A) Q RR (nc) Current (A) 2 22Ω 22A Ω 9 Ω 7 Ω A A 5 di F /dt (A/μs) Fig. 9- Typical Diode I RR vs. di F /dt V CC = V; V GE = 5V; I CE = A; T J = 5 C 6 di F /dt (A/μs) Fig. - Typical Diode Q RR V CC = V; V GE = 5V; T J = 5 C Ω 22 Ω 7 Ω Ω Time (μs) I F (A) V GE (V) Fig. 2 - Typical Diode E RR vs. I F T J = 5 C Fig. 22- Typ. V GE vs Short Circuit Time V CC =V, T C =25 C Cies V V Coes 6 Cres 2 5 Q G, Total Gate Charge (nc) Fig. 23- Typ. Capacitance vs. V CE Fig. 2 - Typical Gate Charge vs. V GE V GE = V; f = MHz I CE = A, L=6μH 6

7 Thermal Response ( Z thjc )... D = SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3 E-6 E t, Rectangular Pulse Duration (sec) R R τ τ τc τ Ri ( C/W) τι (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D =.5. Thermal Response ( Z thjc ) τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-6 E t, Rectangular Pulse Duration (sec) R R τ τ τc τ Ri ( C/W) τι (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7

8 L K DUT L VCC V + - Rg DUT V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for V (BR)CES Measurement

9 tf 25 9% I CE tr TEST VCE (V) 5% V CE % I CE 5 5 ICE (A) VCE (V) 9% test current % test current ICE (A) 5% V CE - Eoff Loss time(μs) Eon Loss time (μs) Fig. WF - Typ. Turn-off Loss T J = 5 C using Fig. CT. Fig. WF2 - Typ. Turn-on Loss T J = 5 C using Fig. CT Q RR 5 VCE - - t RR 5 IC 5 VF (V) Peak I RR % Peak IRR IF (A) Vce (V) 5 Ice (A) time (μs) Time (us) WF.3- Typ. Reverse Recovery T J = 5 C using CT. WF.- Typ. Short Circuit T J = 25 C using CT.3 9

10 TO-2 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-2 Full-Pak Part Marking Information EXAMPLE: THIS IS AN IRFIG WIT H AS S EMB LY LOT CODE 332 AS SEMBLED ON WW 2, IN THE ASSEMBLY LINE "K" Note: "P" in assembly line position indicates "Lead-F ree" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE IRFIG K 3 32 PART NUMBER DATE CODE YEAR = WEEK 2 LINE K TO-2 Full-Pak package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 925, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /9