n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature co-efficient G Ultra fast soft recovery co-pak diode Tight parameter distribution E Lead-Free n-channel Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to C low V CE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation V CES = 12V I NOMINAL = 4A T J(max) = 15 C V CE(on) typ. = 1.7V Applications G C E G U.P.S. TO-247AC TO-247AD Welding IRG7PH46UDPbF IRG7PH46UD-EP Solar Inverter Induction Heating G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V I C = 25 C Continuous Collector Current (Silicon Limited) 18 I C = 1 C Continuous Collector Current (Silicon Limited) 57 I NOMINAL Nominal Current 4 I CM Pulse Collector Current, V GE = 2V 16 A I LM Clamped Inductive Load Current, V GE = 2V c 16 I F = 25 C Diode Continous Forward Current 18 I F = 1 C Diode Continous Forward Current 57 I FM Diode Maximum Forward Current d 16 V GE Continuous Gate-to-Emitter Voltage ±3 V P D = 25 C Maximum Power Dissipation 39 W P D = 1 C Maximum Power Dissipation 156 T J Operating Junction and -55 to +15 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance IRG7PH46UDPbF IRG7PH46UD-EP Parameter Min. Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.32 R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f.66 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface).24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) International Rectifier July 17, 213 C

2 IRG7PH46UDPbF/IRG7PH46UD-EP Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = 1μA e V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 1.2 V/ C V GE = V, I C = 1.mA (25 C-15 C) V CE(on) Collector-to-Emitter Saturation Voltage I C = 4A, V GE = 15V, T J = 25 C 2. V I C = 4A, V GE = 15V, T J = 15 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 1.6mA V GE(th) / TJ Threshold Voltage temp. coefficient -13 mv/ C V CE = V GE, I C = 1.6mA (25 C - 15 C) gfe Forward Transconductance 5 S V CE = 5V, I C = 4A, PW = 2μs I CES Collector-to-Emitter Leakage Current μa V GE = V, V CE = 12V 2. ma V GE = V, V CE = 12V, T J = 15 C V FM Diode Forward Voltage Drop V I F = 4A 3. I F = 4A, T J = 15 C I GES Gate-to-Emitter Leakage Current ±2 na V GE = ±3V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 4A d Q ge Gate-to-Emitter Charge (turn-on) 3 5 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) V CC = 6V E on Turn-On Switching Loss I C = 4A, V CC = 6V, V GE = 15V g E off Turn-Off Switching Loss μj R G = 1, L = 2μH,T J = 25 C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 45 6 t r Rise time 4 6 ns t d(off) Turn-Off delay time t f Fall time 45 6 E on Turn-On Switching Loss 379 I C = 4A, V CC = 6V, V GE =15V g E off Turn-Off Switching Loss 295 μj R G =1, L=2μH, T J = 15 C E total Total Switching Loss 6695 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 4 t r Rise time 4 ns t d(off) Turn-Off delay time 48 t f Fall time 2 C ies Input Capacitance 482 pf V GE = V C oes Output Capacitance 15 V CC = 3V C res Reverse Transfer Capacitance 11 f = 1.Mhz T J = 15 C, I C = 16A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp 12V Rg = 1, V GE = +2V to V Erec Reverse Recovery Energy of the Diode 113 μj T J = 15 C t rr Diode Reverse Recovery Time 14 ns V CC = 6V, I F = 4A I rr Peak Reverse Recovery Current 4 A Rg = 1, L =1.mH Notes: V CC = 8% (V CES ), V GE = 2V, L = 2μH, R G = 1. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R is measured at T J of approximately 9 C. Values influenced by parasitic L and C of the test circuit International Rectifier July 17, 213

3 I C (A) I C (A) Load Current ( A ) I C (A) P tot (W) IRG7PH46UDPbF/IRG7PH46UD-EP Square Wave: V CC Duty cycle : 5% Tj = 15 C Tc = 1 C Vcc = 6V Gate drive as specified Power Dissipation = 154W 4 I 2 Diode as specified f, Frequency ( khz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1 1 DC 1μsec 1 1msec Tc = 25 C Tj = 15 C Single Pulse Fig. 3 - Forward SOA T C = 25 C, T J 15 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 15 C; V GE = 2V International Rectifier July 17, 213

4 I CE (A) I F (A) I CE (A) I CE (A) IRG7PH46UDPbF/IRG7PH46UD-EP V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 3μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3μs V GE = 18V V GE = 15V V GE = 12V C 25 C 15 C 6 V GE = 1V V GE = 8.V V F (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 3μs 12 Fig. 8 - Typ. Diode Forward Characteristics tp = 3μs I CE = 2A I CE = 4A I CE = 8A 8 6 I CE = 2A I CE = 4A I CE = 8A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C International Rectifier July 17, 213

5 Energy (μj) Swiching Time (ns) Swiching Time (ns) I CE, Collector-to-Emitter Current (A) IRG7PH46UDPbF/IRG7PH46UD-EP I CE = 2A I CE = 4A I CE = 8A 6 4 T J = 25 C T J = 15 C V GE (V) Fig Typical V CE vs. V GE T J = 15 C V GE, Gate-to-Emitter Voltage (V) Fig Typ. Transfer Characteristics V CE = 5V td OFF Energy (μj) 6 t F 5 4 E ON 1 3 E OFF td ON 2 1 t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 15 C; L = 2μH; V CE = 6V, R G = 1 ; V GE = 15V 1 Fig Typ. Switching Time vs. I C T J = 15 C; L = 2μH; V CE = 6V, R G = 1 ; V GE = 15V E OFF td OFF t F E ON td ON t R R G ( ) R G ( ) Fig Typ. Energy Loss vs. R G T J = 15 C; L = 2μH; V CE = 6V, I CE = 4A; V GE = 15V Fig Typ. Switching Time vs. R G T J = 15 C; L = 2μH; V CE = 6V, I CE = 4A; V GE = 15V International Rectifier July 17, 213

6 Energy (μj) I RR (A) Q RR (μc) I RR (A) I RR (A) IRG7PH46UDPbF/IRG7PH46UD-EP R G = R G = 2 R G = R G = I F (A) R G ( 4 Fig Typ. Diode I RR vs. I F T J = 15 C 6 Fig Typ. Diode I RR vs. R G T J = 15 C A 3 4 4A A di F /dt (A/μs) Fig Typ. Diode I RR vs. di F /dt V CC = 6V; V GE = 15V; I F = 4A; T J = 15 C di F /dt (A/μs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 6V; V GE = 15V; T J = 15 C R G = 5. R G = 1 R G = 47 R G = I F (A) Fig Typ. Diode E RR vs. I F T J = 15 C International Rectifier July 17, 213

7 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG7PH46UDPbF/IRG7PH46UD-EP Cies V CES = 6V V CES = 4V 8 1 Coes 6 4 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz 1 Fig Typical Gate Charge vs. V GE I CE = 4A; L = 24H Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci i Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) 1 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D =.5 R 4 R C Ri ( C/W) i (sec) Thermal Response ( Z thjc ) R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci i Ri SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) R 4 R C Ri ( C/W) i (sec) International Rectifier July 17, 213

8 IRG7PH46UDPbF/IRG7PH46UD-EP L 1K DUT L VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R = VCC ICM L -5V Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force 1K D1 22K C sense G force DUT.75μF E sense E force Fig.C.T.5 - BVCES Filter Circuit International Rectifier July 17, 213

9 IRG7PH46UDPbF/IRG7PH46UD-EP tf tr TEST CURRENT VCE (V) % V CE 9% I CE 5% I CE ICE (A) VCE (V) % t es t current 9% test current 5% V CE ICE (A) -1 Eoff Loss -1-1 Eon Loss time(μs) time (μs) Fig. WF1 - Typ. Turn-off Loss T J = 15 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss T J = 15 C using Fig. CT E REC 3 2 t RR 1 IF (A) Peak I RR 1% Peak IRR time (μs) Fig. WF3 - Typ. Diode Recovery T J = 15 C using Fig. CT International Rectifier July 17, 213

10 IRG7PH46UDPbF/IRG7PH46UD-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$1,5)3( :,7+$66(%/< /27&2'(,17(51$7,21$/ 3$5718%(5 $66(%/('21::,17+($66(%/</,1(+ 5(&7,),(5 /2*2,5)3( + '$7(&2'( 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(%/< /27&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier July 17, 213

11 IRG7PH46UDPbF/IRG7PH46UD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$5718%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at IR WORLD HEADQUARTERS: 11 N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit International Rectifier July 17, 213