250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
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1 PDP TRENCH IGBT PD IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters V CE min 33 V V CE(ON) I C = 7A.69 V I RP T C = 25 C c 25 A T J max 5 C C G E C G E n-channel TO-22AB G C E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V CE(on) and low E PULSE TM rating per silicon area which improve panel efficiency. Additional features are 5 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Units V GE Gate-to-Emitter Voltage ±3 V I T C = 25 C Continuous Collector Current, V 5V 7 A I T C = C Continuous Collector, V 5V 4 I T C = 25 C Repetitive Peak Current c 25 P C = 25 C Power Dissipation 6 W P C = C Power Dissipation Linear Derating Factor 63.3 W/ C T J Operating Junction and -4 to + 5 C T STG Storage Temperature Range Soldering Temperature for seconds Mounting Torque, 6-32 or M3 Screw 3 lbxin (.Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) d.8 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) d R θcs Case-to-Sink (flat, greased surface).24 C/W R θja Junction-to-Ambient (typical socket mount) d 4 Weight 6. (.2) g (oz) Max. 4/2/
2 IRG6B33UDPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV CES Collector-to-Emitter Breakdown Voltage 33 V ΒV CES / T J Breakdown Voltage Temp. Coefficient.34 V/ C.8.48 V CE(on) V V GE(th) Gate Threshold Voltage V V GE(th) / T J Gate Threshold Voltage Coefficient - mv/ C I CES Collector-to-Emitter Leakage Current µa 5. I GES Gate-to-Emitter Forward Leakage na Gate-to-Emitter Reverse Leakage - g fe Forward Transconductance 5 S Q g Total Gate Charge 85 nc Q gc Gate-to-Collector Charge 3 t d(on) Turn-On delay time 47 I C = 25A, V CC = 96V t r Rise time 37 ns R G = Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 76 T J = 25 C t f Fall time 99 t d(on) Turn-On delay time 45 I C = 25A, V CC = 96V t r Rise time 38 ns R G = Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 228 T J = 5 C t f Fall time 83 t st Shoot Through Blocking Time ns V CC = 24V, V GE = 5V, R G = 5.Ω L = 22nH, C=.4µF, V GE = 5V 834 E PULSE Energy per Pulse µj V CC = 24V, R G = 5.Ω, T J = 25 C 985 L = 22nH, C=.4µF, V GE = 5V V CC = 24V, R G = 5.Ω, T J = C C iss Input Capacitance 2297 V GE = V C oss Output Capacitance 4 pf V CE = 3V C rss Reverse Transfer Capacitance 74 ƒ =.MHz, See Fig.3 L C Internal Collector Inductance 5. Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 3 from package and center of die contact Diode T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units I F(AV) Static Collector-to-Emitter Voltage Conditions V GE = V, I CE = ma Reference to 25 C, I CE = ma V GE = 5V, I CE = 25A e V GE = 5V, I CE = 4A e V GE = 5V, I CE = 7A e V GE = 5V, I CE = 2A e V GE = 5V, I CE = 7A, T J = 5 C V CE = V GE, I CE = 5µA V CE = 33V, V GE = V V CE = 33V, V GE = V, T J = C V CE = 33V, V GE = V, T J = 5 C V GE = 3V V GE = -3V V CE = 25V, I CE = 25A V CE = 2V, I C = 25A, V GE = 5Ve Conditions Average Forward Current at T C =55 C 8. A I FSM Non Repetitive Peak Surge Current A T J = 55 C, PW = 6.ms half sine wave V F Forward Voltage.9.3 V I F = 8A.94. I F = 8A, T J = 5 C t rr Reverse Recovery Time 35 6 ns I F = A, di/dt = -5A/µs, V R =3V 43 T J = 25 C 67 T J = 25 C I F = 8A Q rr Reverse Recovery Charge 6 nc T J = 25 C di/dt = 2A/µs 2 T J = 25 C V R = 2V I rr Peak Recovery Current 2.8 A T J = 25 C 6.3 T J = 25 C Notes: Half sine wave with duty cycle =., ton=2µsec. R θ is measured at T J of approximately 9 C. ƒ Pulse width 4µs; duty cycle 2%. 2
3 IRG6B33UDPbF V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V V GE = 6.V V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V V GE = 6.V Fig. Typical Output 25 C Fig 2. Typical Output 75 C V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V V GE = 6.V 6 2 V GE = 8V V GE = 5V V GE = 2V V GE = V V GE = 8.V V GE = 6.V Fig 3. Typical Output 25 C Fig 4. Typical Output 5 C 3 4 I C = 25A T J = 25 C T J = 5 C 6 T J = 25 C T J = 5 C V GE (V) V GE (V) Fig 5. Typical Transfer Characteristics Fig 6. V CE(ON) vs. Gate Voltage 3
4 Energy per Pulse (µj) I C (A) Energy per Pulse (µj) Energy per Pulse (µj) I C, Collector Current (A) Repetitive Peak Current (A) IRG6B33UDPbF T C, Case Temperature ( C) Fig 7. Maximum Collector Current vs. Case Temperature ton= 2µs Duty cycle =. Half Sine Wave Case Temperature ( C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 9 V CC = 24V L = 22nH C = variable C 9 L = 22nH C =.4µF C C 7 25 C I C, Peak Collector Current (A) Fig 9. Typical E PULSE vs. Collector Current V CE, Collector-to-Emitter Voltage (V) Fig. Typical E PULSE vs. Collector-to-Emitter Voltage 4 V CC = 24V 2 L = 22nH t = µs half sine C=.4µF µs µs 8 C=.3µF ms 6 C=.2µF T J, Temperature (ºC) Fig. E PULSE vs. Temperature Fig 2. Forward Bias Safe Operating Area 4
5 Capacitance (pf) V GE, Gate-to-Source Voltage (V) IRG6B33UDPbF 25 I D = 25A Cies 2 5 V DS = 24V VDS= 2V VDS= 5V Coes Cres Q G Total Gate Charge (nc) Fig 3. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 4. Typical Gate Charge vs. Gate-to-Emitter Voltage D = R R 2 R 3 R R 2 R 3 τ J τ J τ τ Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) D =.5.2 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 E-6 E t, Rectangular Pulse Duration (sec) Ri ( C/W) τι (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 6. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE) 5 R4 R4 τ4 τ4 τc τ
6 Q rr - (ns) I F, Instantaneous Forward Current (A) t rr - (ns) IRG6B33UDPbF I F = 8.A, T J =25 C 6 5 Tj = 5 C Tj = 25 C 4 3 I F = 8.A, T J =25 C V FM, Forward Voltage Drop (V) Fig. 7 - Typical Forward Voltage Drop Characteristics 2 di f / dt - (A / µs) Fig. 8 - Typical Reverse Recovery vs. di F /dt 4 3 I F = 8.A, T J =25 C 2 Fig.2 - Switching Loss Circuit I F = 8.A, T J =25 C A RG DRIVER L C di f / dt - (A / µs) VCC Fig. 9- Typical Stored Charge vs. di F /dt B RG Ipulse V CE Energy DUT I C Current Fig 2a. t st and E PULSE Test Circuit Fig 2b. t st Test Waveforms PULSE A PULSE B K DUT L VCC t ST Fig 2c. E PULSE Test Waveforms Fig Gate Charge Circuit (turn-off) 6
7 IRG6B33UDPbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$,5) /27&2'( $66(%/('2::,7+($66(%/</,(& RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$578%(5 '$7(&2'( <($5 :((. /,(& TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.4/2 7
225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
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PD - 97A IRF797PbF Appications Dua SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and Set-Top Box V DSS HEXFET Power MOSFET R DS(on) max 3V Q.4m:@V GS = V 9.A
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DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
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