A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

Size: px
Start display at page:

Download "A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units"

Transcription

1 V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23) Features and Benefits Features ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Benefits Low R DS(on) ( 56mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 40 V I T A = 25 C Continuous Drain Current, V V 3.6 I T A = 70 C Continuous Drain Current, V V 2.9 A I DM Pulsed Drain Current 5 P A = 25 C Maximum Power Dissipation.3 P A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 6 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e R θja Junction-to-Ambient (t<s) f 99 Notes through are on page C/W 02/29/2

2 Electric T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 40 V V GS = 0V, I D = 250μA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.04 V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V I DSS 20 Drain-to-Source Leakage Current 250 I GSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage - μa na R G Internal Gate Resistance. Ω gfs Forward Transconductance 6.2 S Q g Total Gate Charge Q gs Gate-to-Source Charge 0.7 nc Q gd Gate-to-Drain ("Miller") Charge.4 t d(on) Turn-On Delay Time 5. t r Rise Time 5.4 t d(off) Turn-Off Delay Time 6.4 ns t f Fall Time 4.3 C iss Input Capacitance 266 C oss Output Capacitance 49 pf C rss Reverse Transfer Capacitance 29 Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current.3 I SM (Body Diode) A Pulsed Source Current 5 (Body Diode)Ãc V SD Diode Forward Voltage.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge 9.3 nc Reference to 25 C, I D = ma V GS = V, I D = 3.6A d V GS = 4.5V, I D = 2.9A d V DS = V GS, I D = 25μA V DS = 40V, V GS = 0V V DS = 40V, V GS = 0V, T J = 25 C V GS = 6V V GS = -6V V DS = V, I D = 3.6A I D = 3.6A V DS = 20V V GS = 4.5V d V DD = 20V I D =.0A R G = 6.8 Ω V GS = 4.5V V GS = 0V V DS = 25V ƒ =.0MHz Conditions MOSFET symbol D showing the G integral reverse S p-n junction diode. T J = 25 C, I S =.3A, V GS = 0V d T J = 25 C, V R = 32V, I F =.3 A di/dt = A/μs d 2

3 I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP V 7.0V 6.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V VGS TOP V 7.0V 6.0V 4.5V 4.0V 3.5V 3.0V BOTTOM 2.5V V μs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 2.5V 60μs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics V DS = 25V 60μs PULSE WIDTH 2.0 I D = 3.6A V GS = V.5 T J = 50 C T J = 25 C V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 4 2 I D = 3.6A V DS = 32V V DS = 20V VDS= 8V 8 C iss 6 C oss 4 C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) μsec T J = 50 C T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) T A = 25 C Tj = 50 C Single Pulse msec msec 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current (A) 4.2 V DS R D R G V GS D.U.T. + - V DD 2.4 V GS.8 Pulse Width µs Duty Factor 0. %.2 Fig a. Switching Time Test Circuit T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current Vs. Ambient Temperature V DS 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response ( Z thja ) C/W D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja + T A 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS(on), Drain-to -Source On Resistance (m Ω) R DS (on), Drain-to -Source On Resistance (mω) 60 I D = 3.6A T J = 25 C Vgs = 4.5V Vgs = V 40 T J = 25 C V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V GS Q GS Q G Q GD 2V.2μF 50KΩ.3μF D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 V GS(th), Gate threshold Voltage (V) Power (W) I D = 25uA I D = 250uA T J, Temperature ( C ) 0 E Time (sec) Fig 5. Typical Threshold Voltage Vs. Junction Temperature Fig 6. Typical Power Vs. Time 7

8 Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 A NOTES: Recommended Footprint C 0. [0.004] C 3X b 0.20 [0.008] M C B A DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC L X L 7 Micro3 (SOT-23/TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/ DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. DATE CODE PART NUMBER Cu WIRE LOT CODE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 S = IRLML6244 B = IRLML2803 T = IRLML6246 C = IRLML6302 U = IRLML6344 D = IRLML53 V = IRLML6346 E = IRLML6402 W = IRFML8244 F = IRLML640 X = IRLML2244 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 Y = IRLML2246 Z = IRFML9244 Note: A line above the work week (as shown here) indicates Lead - Free. LEAD FREE DATE CODE MARKING INSTRUCTIONS WW = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W WW = (27-52) IF PRECEDED BY A LETTER YEAR Y A B C D E F G H J K WORK WEEK 27 A 28 B 29 C 30 D A B C D X Y Z W X Y Z Note: For the most current drawing please refer to IR website at: 8

9 Micro3 (SOT-23) Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: 9

10 Standard Pack Orderable part number Package Type Form Quantity Micro3 (SOT-23) Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F guidelines ) MS L Micro3 (SOT-23) (per IPC/JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. ƒ Surface mounted on in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.02/202

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

More information

IRLML2030TRPbF HEXFET Power MOSFET

IRLML2030TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

More information

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard

More information

IRLML6346TRPbF HEXFET Power MOSFET

IRLML6346TRPbF HEXFET Power MOSFET P - 9784A EXFET Power MOSFET V S 3 V V GS Max ± 2 V * R Son) max @V GS = 4.V) 63 m R Son) max @V GS = 2.V) 8 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)

More information

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized

More information

Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached materia are the property of its owner. Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8.  1 l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD -95441 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS PD - 97A IRF797PbF Appications Dua SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and Set-Top Box V DSS HEXFET Power MOSFET R DS(on) max 3V Q.4m:@V GS = V 9.A

More information

AUIRFS4115 AUIRFSL4115

AUIRFS4115 AUIRFSL4115 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1. AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free,

More information

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

V DSS. 30V Q1 GS = 10V 6.4A Q2 GS = 10V 9.7A

V DSS. 30V Q1 GS = 10V 6.4A Q2 GS = 10V 9.7A PD 9794A IRF7902PbF Appications Dua SO8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and SetTop Box V DSS HEXFET Power MOSFET R DS(on) max 30V Q 22.6m:@V GS =

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain

More information

AO7401 P-Channel Enhancement Mode Field Effect Transistor

AO7401 P-Channel Enhancement Mode Field Effect Transistor Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,

More information

Absolute Maximum Ratings Max.

Absolute Maximum Ratings Max. PD 97049B IRF52SPbF IRF52LPbF HEXFET Power MOSFET Advanced Process Technoogy Utra Low OnResistance 50 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Some Parameters are Different

More information

P-Channel Enhancement Mode Mosfet

P-Channel Enhancement Mode Mosfet WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely

More information

IRGB4B60K IRGS4B60K IRGSL4B60K

IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature

More information

± 20 Transient Gate-to-Emitter Voltage

± 20 Transient Gate-to-Emitter Voltage IRGSDPbF V CES = V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE I C.A, T C = C C C t sc > µs, T jmax = 7 C V CE(on) typ..7v Applications Appliance Motor Drive Inverters SMPS Features

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

AO3411 P-Channel Enhancement Mode Field Effect Transistor

AO3411 P-Channel Enhancement Mode Field Effect Transistor January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE

More information

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD. Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V

More information

225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High

More information

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe

More information

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J

Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor

More information

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

IRGB30B60K IRGS30B60K IRGSL30B60K

IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature

More information

IRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance.

IRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance. PD - 9609 dvanced Process Technoogy Utra Low On-Resistance Dua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 D D D2

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

IRGS4062DPbF IRGSL4062DPbF

IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square

More information

30V GS = 10V 6.2nC

30V GS = 10V 6.2nC pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)

More information

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET

LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit

More information

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating

More information

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation

More information

TO-247-3L Inner Circuit Product Summary I C) R DS(on)

TO-247-3L Inner Circuit Product Summary I C) R DS(on) Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

N-Channel ENHANCEMENT MODE POWER MOSFET 0V

N-Channel ENHANCEMENT MODE POWER MOSFET 0V PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION

More information

SSF8NP60U. Main Product Characteristics: 600V V DSS. 0.73Ω (typ.) Features and Benefits: Description: Absolute max Rating:

SSF8NP60U. Main Product Characteristics: 600V V DSS. 0.73Ω (typ.) Features and Benefits: Description: Absolute max Rating: Main Product Characteristics: V DSS 600V R DS (on) 0.73Ω (typ.) I D 8A 1 Features and Benefits: TO-220 Marking and pin Assignment Schematic diagram High dv/dt and avalanche capabilities 100% avalanche

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

IRGP4263PbF IRGP4263-EPbF

IRGP4263PbF IRGP4263-EPbF IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding

More information

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark

More information

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible

More information

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

OptiMOS P2 Small-Signal-Transistor

OptiMOS P2 Small-Signal-Transistor OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max

More information

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 and Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX These and devices are military qualified up to a JANTX level for highreliability applications.

More information

Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.

Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C. C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance

More information

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17

More information

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

More information

Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.

Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C. C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low

More information

IRGB4055PbF IRGS4055PbF

IRGB4055PbF IRGS4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High

More information

Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking

Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low

More information

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1. M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.

More information

OptiMOS -P Small-Signal-Transistor

OptiMOS -P Small-Signal-Transistor OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

SMPS MOSFET. V DSS R DS(on) max (mw) I D

SMPS MOSFET. V DSS R DS(on) max (mw) I D SMPS MOSFET P- 9628 Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q] Quaified Lead-Free escription Specificay

More information

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction

More information

AOT404 N-Channel Enhancement Mode Field Effect Transistor

AOT404 N-Channel Enhancement Mode Field Effect Transistor AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested

More information

SI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.

SI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1. M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low

More information

Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V 10V I DM Pulsed Drain Current

Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V 10V I DM Pulsed Drain Current Main Product Characteristics: V DSS 60V R DS (on) 70mΩ(typ) I D 2.7A SOT23 Marking and pin Assignment Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed for PWM,

More information

OptiMOS Small-Signal-Transistor

OptiMOS Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max

More information

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

More information

AON4605 Complementary Enhancement Mode Field Effect Transistor

AON4605 Complementary Enhancement Mode Field Effect Transistor AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form

More information

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1. Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

SIPMOS Small-Signal Transistor BSP 149

SIPMOS Small-Signal Transistor BSP 149 SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking

More information

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching. M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

More information

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 Compliant P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N7236U switching transistor is military qualified up to the JANTXV level for highreliability

More information

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1. M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold

More information

Package. TAB Drain S S G. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 13.5 V GS = 15 V, T C = 100 C

Package. TAB Drain S S G. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 13.5 V GS = 15 V, T C = 100 C C3M121K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 1 V 22 A 12 mω C3M TM SiC MOSFET technology Optimized package with separate

More information