± 20 Transient Gate-to-Emitter Voltage
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1 IRGSDPbF V CES = V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE I C.A, T C = C C C t sc > µs, T jmax = 7 C V CE(on) typ..7v Applications Appliance Motor Drive Inverters SMPS Features Low V CE(ON) and switching losses Square RBSOA and maximum junction temperature 7 C Positive V CE(ON) temperature coefficient and tighter distribution of parameters μs short circuit SOA Ultra fast soft recovery copak diode Lead-free, RoHS compliant G E n-channel E G D -Pak IRGSDPbF G C E Gate Colletor Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Performance optimized for motor drive operation Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGSDPbF DPak Tube IRGSDPbF Tape and Reel Left IRGSDTRLPbF Tape and Reel Right IRGSDTRRPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage V I T C = C Continuous Collector Current I T C = C Continuous Collector Current. I CM Pulsed Collector Current, V GE = V I LM Clamped Inductive Load Current, V GE = V c A I C = C Diode Continuous Forward Current. I C = C Diode Continuous Forward Current. I FM Diode Maximum Forward Current d V GE Continuous Gate-to-Emitter Voltage ± V Transient Gate-to-Emitter Voltage ± 3 P T C = Maximum Power Dissipation 77 W P T C = Maximum Power Dissipation 39 T J Operating Junction and C - to + 7 T STG Storage Temperature Range Soldering Temperature, for seconds 3 (.3 in. (.mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case - IGBT e.9 R JC Junction-to-Case - Diode e.3 C/W R CS Case-to-Sink, Flat, Greased Surface. R JA Junction-to-Ambient (PCB Mountet, steady-state) g *Qualification standards can be found at International Rectifier October,
2 IRGSDPbF Electrical T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage V V GE = V, I c = μa f V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I c = μa ( -7 o C ) f.7. I C =.A, V GE = V, T J = C V CE(on) Collector-to-Emitter Saturation Voltage.7 V I C =.A, V GE = V, T J = C. I C =.A, V GE = V, T J = 7 C V GE(th) Gate Threshold Voltage.. V V CE = V GE, I C = μa V GE(th) / TJ Threshold Voltage temp. coefficient -3 mv/ C V CE = V GE, I C = μa ( -7 o C ) gfe Forward Transconductance. S V CE = V, I C =.A, PW = s I CES μa V GE = V,V CE = V Collector-to-Emitter Leakage Current V GE = V, V CE = V, T J =7 C V FM..3 V I F =.A Diode Forward Voltage Drop.3 I F =.A, T J = 7 C I GES Gate-to-Emitter Leakage Current ± na V GE = ± V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max.h Units Conditions Q g Total Gate Charge (turn-on) 3 9. I C =.A Q ge Gate-to-Emitter Charge (turn-on) 3.. nc V CC = V Q gc Gate-to-Collector Charge (turn-on). 9. V GE = V E on Turn-On Switching Loss I C =.A, V CC = V, V GE = V E off Turn-Off Switching Loss 3 μj R G = 7, L=mH, L S = nh, T J = C E total Total Switching Loss 7 9 E nergy los s es include tail and diode revers e recovery t d(on) Turn-On delay time 7 3 I C =.A, V CC = V t r Rise time ns R G = 7, L=mH, L S = nh t d(off) Turn-Off delay time 7 93 T J = C t f Fall time 7 E on Turn-On Switching Loss I C =.A, V CC = V, V GE = V E off Turn-Off Switching Loss 9 μj R G = 7, L=mH, L S = nh, T J = 7 C E total Total Switching Loss 39 E nergy los s es include tail and diode revers e recovery t d(on) Turn-On delay time I C =.A, V CC = V t r Rise time ns R G = 7, L=mH, L S = nh t d(off) Turn-Off delay time 9 T J = 7 C t f Fall time 3 C ies Input Capacitance 3 V GE = V C oes Output Capacitance 9 pf V CC = 3V C res Reverse Transfer Capacitance f = Mhz T J = 7 C, I C = A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = V, Vp =V R G =, V GE = +V to V SCSOA Short Circuit Safe Operating Area μs V CC = V, Vp =V R G =, V GE = +V to V Erec Reverse recovery energy of the diode 7 μj T J = 7 o C trr Diode Reverse recovery time 7 ns V CC = V, I F =.A Irr Peak Reverse Recovery Current A V GE = V, Rg = 7, L=mH, L S =nh Notes: V CC = % (V CES ), V GE = V, L =.mh, R G = 7 Pulse width limited by max. junction temperature. ƒ R is measured at T J approximately 9 C. Refer to AN- for guidelines for measuring V (BR)CES safely. When mounted on " square PCB (FR- or G- Material). For recommended footprint and soldering techniques refer to application note #AN-99. Maximum limits are based on statistical sample size characterization. International Rectifier October,
3 I CE (A) I CE (A) I C (A) I C A) I C (A) P tot (W) IRGSDPbF 7 3 T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. - Power Dissipation vs. Case Temperature μsec μsec DC. Tc = C Tj = 7 C Single Pulse Fig. 3 - Forward SOA, T C = C, T J 7 C, V GE = V Fig. - Reverse Bias SOA T J = 7 C, V GE = V Top V = V GE V = V GE V GE = V V = V GE Bottom V GE =.V Top V = V GE V = V GE V = V GE V = V GE Bottom V =.V GE Fig. - Typ. IGBT Output Characteristics T J = - C; tp = μs Fig. - Typ. IGBT Output Characteristics T J = C; tp = μs 3 International Rectifier October,
4 I CE (A) I F (A) IRGSDPbF Top V = V GE V = V GE V = V GE V = V GE Bottom V =.V GE - C C 7 C V F (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 7 C; tp = μs Fig. - Typ. Diode Forward Characteristics tp = μs I CE = 3.A I CE =.A I CE = A I CE = 3.A I CE =.A I CE = A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = C T J = C T J = 7 C I CE = 3.A I CE =.A I CE = A I C, Collector-to-Emitter Current (A) V GE (V) V GE, Gate-to-Emitter Voltage (V) Fig. - Typical V CE vs. V GE T J = 7 C Fig. - Typ. Transfer Characteristics V CE = V; tp = μs International Rectifier October,
5 I RR (A) I RR (A) Energy (μj) Swiching Time (ns) Energy (μj) Swiching Time (ns) IRGSDPbF 3 3 td OFF t F E OFF td ON t R E ON I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = 7 C; L = mh; V CE = V, R G = 7 ; V GE = V. I C (A) Fig. - Typ. Switching Time vs. I C T J = 7 C; L=mH; V CE = V R G = 7 ; V GE = V E OFF E ON td OFF t F td ON t R 7 Rg ( ) Fig. - Typ. Energy Loss vs. R G T J = 7 C; L = mh; V CE = V, I CE =.A; V GE = V 3 7 R G ( ) Fig. - Typ. Switching Time vs. R G T J = 7 C; L=mH; V CE = V I CE =.A; V GE = V R G = R G = R G = 7 R G = 7 I F (A) R G ( Fig. 7 - Typical Diode I RR vs. I F T J = 7 C Fig. - Typical Diode I RR vs. R G T J = 7 C; I F =.A International Rectifier October,
6 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (μj) Time (μs) I RR (A) Q RR (nc) IRGSDPbF 7 A.A 3.A di F /dt (A/μs) Fig. 9- Typical Diode I RR vs. di F /dt V CC = V; V GE = V; I CE =.A; T J = 7 C di F /dt (A/μs) Fig. - Typical Diode Q RR V CC = V; V GE = V; T J = 7 C 3 3 R G = T sc I sc R G = R G = 7 R G = 3 Current (A) I F (A) V GE (V) Fig. - Typical Diode E RR vs. I F T J = 7 C Fig. - Typ. V GE vs. Short Circuit Time V CC =V, T C = C Cies V CES = V V CES = 3V Coes Cres 3 Q G, Total Gate Charge (nc) Fig. 3- Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. - Typical Gate Charge vs. V GE I CE =.A, L=μH International Rectifier October,
7 IRGSDPbF D =. Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R R R R 3 R 3 J J 3 3 Ci= i Ri Ci i Ri Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) R R C Ri ( C/W) i (sec) D =. Thermal Response ( Z thjc ) R R R R R 3 R 3 J J 3 3 Ci= i Ri Ci i Ri SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig.. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) R R C Ri ( C/W) i (sec) International Rectifier October,
8 IRGSDPbF L K DUT L VCC V + - Rg DUT V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit Fig.C.T. - Resistive Load Circuit Fig.C.T. - Typical Filter Circuit for V (BR)CES Measurement International Rectifier October,
9 IRGSDPbF 3 tr TEST CURRENT VCE (V) 3 tf 9% I CE VCE (V) 3 9% test current % I CE % test current % V CE % V CE Eoff Loss time(µs) Eon Loss time (µs) Fig. WF - Typ. Turn-off Loss T J = 7 C using Fig. CT. Fig. WF - Typ. Turn-on Loss T J = 7 C using Fig. CT. Q RR V CE 7 - t RR 3 VF (V) - -3 Peak I RR % Peak IRR - Vce (V) 3 I CE time (µs) Time (us) WF.3- Typ. Diode Recovery T J = 7 C using CT. WF.- Typ. Short Circuit T J = C using CT International Rectifier October,
10 IRGSDPbF D Pak Package Outline Dimensions are shown in millimeters (inches) D Pak Part Marking Information 7+,,$,):,7+ /7&'(,7($7,$/ $(%/(':: (&7,),(,7+($(%/</,(/ /* $(%/< /7&'( ) 3$7%( '$7(&'( <($ :((. /,(/,7($7,$/ (&7,),( /* $(%/< /7&'( ) 3$7%( '$7(&'( 3 '(,*$7(/($')(( 3'&737,$/ <($ :((. $ $(%/<,7(&'( Note: For the most current drawing please refer to IR website at International Rectifier October,
11 IRGSDPbF D Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR. (.3). (.9). (.) 3.9 (.3). (.3). (.9).3 (.).3 (.3) FEED DIRECTION TRL. (.73). (.). (.7). (.9). (.9). (.).3 (.97) 3.9 (.9).9 (.9).7 (.). (.3).9 (.).7 (.9). (.9).7 (.3). (.7) FEED DIRECTION 3. (.3). (.) 7. (.79) 3.9 (.9) 33. (.73) MAX.. (.3) MIN. NOTES :. COMFORMS TO EIA-.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB.. INCLUDES FLANGE OUTER EDGE.. (.39). (.9) 3 3. (.97) MAX. International Rectifier October,
12 IRGSDPbF Qualification Information Industrial Qualification Level (per JEDEC JESD7F) Moisture Sensitivity Level MSL DPak (per JEDEC J-STD-D) Machine Model Class M (+/- V) AEC-Q- Human Body Model Class HA (+/- V) ESD AEC-Q- Charged Device Model Class C (+/- V) RoHS Compliant AEC-Q- Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9, USA Tel: (3) -7 TAC Fax: (3) -793 Visit us at for sales contact information. International Rectifier October,
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
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Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
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