V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA

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1 AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations. The copackaged soft diode is optimized to minimize losses in motor control applications. Product Summary V CE I C (T C = C) 6V A V CE(sat) (T C =).V Top View TO22 DPAK Bottom View C C C G E AODB6D Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol AODB6D Collector-Emitter Voltage 6 Gate-Emitter Voltage Continuous Collector Current A Diode Pulsed Current, Limited by T Jmax Short circuit withstanding time V GE = V, V CE 4V, delay between short circuits.s, T C = Power Dissipation T C = T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE 6V, Limited by T Jmax Continuous Diode T C = Forward Current T C = C T C = T C = C Note A:I C limited by package limitation E V CE V GE I C I CM I LM I F I FM t SC P D R θ JC G G E Units V ±2 V 2 A µs Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG - to C purpose, /8" from case for seconds Thermal Characteristics T L 3 C Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Symbol R θ JA R θ JC AODB6D 2.3 Units C/W C/W Maximum Diode Junction-to-Case 3 C/W A A A A W Rev.4.: Jan 24 Page of 9

2 AODB6D Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J = V V CE(sat) V F T J = -..8 T J = T J = C T J = T J = T J = C V GE(th) Gate-Emitter Threshold Voltage V CE =V GE, I C =ma V I CES T J = - - T J = - - T J = C - - I GES Gate-Emitter Leakage Current V CE =V, V GE =±2V - - ± na g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) Collector-Emitter Saturation Voltage Diode Forward Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate to Collector Charge Short circuit collector current, Max. short circuits, Delay between short circuits.s Gate Resistance V GE =V, I C =A V GE =V, I C =A V CE =6V, V GE =V V CE =2V, I C =A V GE =V, V CE =2V, f=mhz Gate to Emitter Charge V GE =V, V CE =48V, I C =A SWITCHING PARAMETERS, (Load Inductive, T J =) t r t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Total Gate Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy V GE =V, V CE =4V, R G =6Ω V GE =V, V CE =V, f=mhz Diode Reverse Recovery Time T J = Q rr Diode Reverse Recovery Charge I F =A,dI/dt=2A/µs,V CE =4V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, T J = C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current T J = V GE =V, V CE =4V, I C =A, R G =6Ω, Parasitic Ιnductance=7nH T J = C V GE =V, V CE =4V, I C =A, R G =6Ω, Parasitic Inductance=7nH T J = C I F =A,dI/dt=2A/µs,V CE =4V V V µa S pf pf pf nc nc nc A Ω ns - - ns ns - - ns mj mj mj ns µc A - - ns ns - - ns ns mj mj mj ns µc A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.: Jan 24 Page 2 of 9

3 AODB6D V 7V V 3V V 7V V 3V V GE = 7V V 9V V GE =7V V 9V Fig : Output Characteristic (T j = ) Fig 2: Output Characteristic (T j = C ) 2 V CE =2V -4 C C 3 C C I F (A) V GE (V) Fig 3: Transfer Characteristic V F (V) Fig 4: Diode Characteristic I C =A 2 V CE(sat) (V) 2 I C =A I C =2.A Time (µs) Current(A) Temperature ( C) Fig : Collector-Emitter Saturation Voltage vs. Junction Temperature V GE (V) Fig 6: V GE vs. Short Circuit Time (V CE =4V,T C = ) Rev.4.: Jan 24 Page 3 of 9

4 AODB6D 2 V CE =48V I C =A C ies V GE (V) Capacitance (pf) C oes C res Q g (nc) Fig 7: Gate-Charge Characteristics Fig 8: Capacitance Characteristic I c (A), Fig : Reverse Bias SOA (T j = C,V GE =V) 6 8 Power Disspation(W) Current rating T CASE ( C) Fig : Power Disspation as a Function of Case T CASE ( C) Fig 2: Current De-rating Rev.4.: Jan 24 Page 4 of 9

5 AODB6D Switching Time (ns) Td(off) Tf Td(on) Tr, Switching Time (ns), Td(off) Tf Td(on) Tr R g (Ω) Figure 3: Switching Time vs. I C (T j = C,V GE =V,V CE =4V,R g =6Ω) Figure 4: Switching Time vs. R g (T j = C,V GE =V,V CE =4V,I C =A) Td(off) Tf Td(on) Tr 8 Switching Time (ns) V GE(TH) (V) T J ( C) Figure : Switching Time vs.t j ( V GE =V,V CE =4V,I C =A,R g =6Ω) T J ( C) Figure 6: V GE(TH) vs. T j Rev.4.: Jan 24 Page of 9

6 AODB6D.6 Eoff.6 Eoff E,SwitchIng Energy (mj) Eon Etotal Switching Energy (mj) Eon Etotal R g (Ω) Figure 7: Switching Loss vs. I C (T j = C,V GE =V,V CE =4V,R g =6Ω) Figure 8: Switching Loss vs. R g (T j = C,V GE =V,V CE =4V,I C =A) Switching Energy (mj) Eoff Eon Etotal Switching Energ y (mj) Eoff Eon Etotal T J ( C) Figure 9: Switching Loss vs. T j (V GE =V,V CE =4V,I C =A,R g =6Ω) Figure 2: Switching Loss vs. V CE (T j = C,V GE =V,I C =A,R g =6Ω) Rev.4.: Jan 24 Page 6 of 9

7 AODB6D.E A I CE(S) (A).E-4.E-.E-6 V CE =6V V SD (V).7.2 A A IF=A 3V.E-7 V CE =4V.7.E Temperature ( C ) Fig 2: Reverse Leakage Current vs. Junction Temperature Temperature ( C ) Fig 22: Diode Forward Voltage vs. Junction Temperature Q rr (nc) C C Q rr I rm I F (A) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =V,V CE =4V, di/dt=2a/µs) I rm (A) T rr (ns) 2 2 C C T rr I S (A) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =V,V CE =4V, di/dt=2a/µs) S S C 6 6 Q rr (nc) C Q rr I rm I rm (A) T rr (ns) C C T rr S 2 S di/dt (A/µS) Fig 2: Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =V,V CE =4V,I F =A) di/dt (A/µS) Fig 26: Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =V,V CE =4V,I F =A) Rev.4.: Jan 24 Page 7 of 9

8 AODB6D Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =2.3 C/W In descending order D=.,.3,.,.,.2,., single pulse P D T on T Single Pulse. E-6 E-.... Pulse Width (s) Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =3 C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse P D T on T. E-.... Pulse Width (s) Figure 28: Normalized Maximum Transient Thermal Impedance for Diode Rev.4.: Jan 24 Page 8 of 9

9 AODB6D Rev.4.: Jan 24 Page 9 of 9