SGP30N60HS SGW30N60HS
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1 High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers: - parallel switching capability - moderate E off increase with temperature - very tight parameter distribution PG-TO PG-TO High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1 for target applications Complete product spectrum and PSpice Models : Type V CE I C E off) T j Marking Package SGP30N60HS 600V µJ 150 C G30N60HS PG-TO V µJ 150 C G30N60HS PG-TO Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 600 V DC collector current I C T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 112 Turn off safe operating area V CE 600V, T j 150 C Avalanche energy single pulse I C = 20A, V CC =50V, R GE =25Ω start T J =25 C Gate-emitter voltage static transient (t p <1µs, D<0.05) Short circuit withstand time 2) V GE = 15V, V CC 600V, T j 150 C Power dissipation T C = 25 C Operating junction and storage temperature T j, T stg E AS 165 mj V GE ±20 ±30 t SC 10 µs P tot 250 W Time limited operating junction temperature for t < 150h T j(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s A V C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Sep 08
2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient R thjc 0.5 K/W R thja PG-TO PG-TO Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V (BR)CES V GE =0V, I C =500µA V Collector-emitter saturation voltage V CE(sat) V GE = 15V, I C =30A T j =25 C T j =150 C Gate-emitter threshold voltage V GE(th) I C =700µA,V CE =V GE Zero gate voltage collector current I CES V CE =600V,V GE =0V µa T j =25 C T j =150 C Gate-emitter leakage current I GES V CE =0V,V GE =20V na Transconductance g fs V CE =20V, I C =30A S Dynamic Characteristic Input capacitance C iss V CE =25V, Output capacitance C oss V GE =0V, Reverse transfer capacitance f=1mhz - 92 C rss Gate charge Q Gate V CC =480V, I C =30A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E PG-TO PG-TO Short circuit collector current 1) I C(SC) V GE =15V,t SC 10µs V CC 600V, T j 150 C pf nc nh A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Sep 08
3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =25 C, - 20 Rise time t V CC =400V,I C =30A, r - 21 V GE =0/15V, Turn-off delay time t d(off) R G =11Ω Fall time t f 1) L σ =60nH, ) Turn-on energy E C σ =40pF on Energy losses include Turn-off energy E off tail and diode Total switching energy reverse recovery E ts Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =150 C - 16 Rise time t V CC =400V,I C =30A, r - 13 V GE =0/15V, Turn-off delay time t d(off) R G = 1.8Ω Fall time t f 1) L σ =60nH, ) Turn-on energy E C σ =40pF on Energy losses include Turn-off energy E off tail and diode Total switching energy reverse recovery E ts Turn-on delay time t d(on) T j =150 C - 20 Rise time t V CC =400V,I C =30A, r - 19 V GE =0/15V, Turn-off delay time t d(off) R G = 11Ω ) Fall time t f L σ =60nH, ) Turn-on energy E C σ =40pF on Energy losses include Turn-off energy E off tail and diode Total switching energy reverse recovery E ts Unit ns mj ns mj 1) Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev. 2.3 Sep 08
4 100A t P =4µs IC, COLLECTOR CURRENT 100A 80A 60A 40A T C =80 C T C =110 C I c IC, COLLECTOR CURRENT 10A 1A 15µs 50µs 200µs 1ms 20A I c DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 11Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C; V GE =15V) 200W 40A Limited by Bond wire Ptot, POWER DISSIPATION 150W 100W 50W IC, COLLECTOR CURRENT 30A 20A 10A 0W 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) 0A 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev. 2.3 Sep 08
5 IC, COLLECTOR CURRENT 80A 70A 60A 50A 40A 30A 20A V GE =20V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT 80A 70A 60A 50A 40A 30A 20A V GE =20V 15V 13V 11V 9V 7V 5V 10A 10A 0A 0V 2V 4V 6V V CE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0A 0V 2V 4V 6V V CE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 150 C) IC, COLLECTOR CURRENT 80A 60A 40A 20A T J =-55 C 25 C 150 C 0A 0V 2V 4V 6V 8V VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V I C =60A I C =30A I C =15A 1,0V -50 C 0 C 50 C 100 C 150 C V GE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =10V) T J, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.3 Sep 08
6 t d(off) t, SWITCHING TIMES 100ns t f t, SWITCHING TIMES 100 ns t d(off) t f t d(on) t d(on) t r 10ns 0A 10A 20A 30A 40A 50A I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =150 C, V CE =400V, V GE =0/15V, R G =11Ω, Dynamic test circuit in Figure E) t r 10 ns 0Ω 5Ω 10Ω 15Ω 20Ω 25Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J =150 C, V CE =400V, V GE =0/15V, I C =30A, Dynamic test circuit in Figure E) t, SWITCHING TIMES 100ns t d(off) t f t r t d(on) 10ns 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =400V, V GE =0/15V, I C =30A, R G =11Ω, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V max. typ. min. 1,0V -50 C 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.7mA) Power Semiconductors 6 Rev. 2.3 Sep 08
7 5,0mJ *) E on and E ts include losses due to diode recovery 3,0 mj *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES 4,0mJ 3,0mJ 2,0mJ 1,0mJ E on * E off E, SWITCHING ENERGY LOSSES 2,5 mj 2,0 mj 1,5 mj 1,0 mj 0,5 mj E ts * E on * E off 0,0mJ 0A 10A 20A 30A 40A 50A 60A I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T J =150 C, V CE =400V, V GE =0/15V, R G =11Ω, Dynamic test circuit in Figure E) 0,0 mj 0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T J =150 C, V CE =400V, V GE =0/15V, I C =30A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES 1,5mJ 1,0mJ 0,5mJ *) E on and E ts include losses due to diode recovery E ts * E on * E off ZthJC, TRANSIENT THERMAL RESISTANCE D= K/W K/W K/W single pulse R,(K/W) τ, (s) E E-04 R 1 R 2 0,0mJ 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =400V, V GE =0/15V, I C =30A, R G =11Ω, Dynamic test circuit in Figure E) C 1 =τ 1 /R 1 C 2 =τ 2 /R K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = t p / T) Power Semiconductors 7 Rev. 2.3 Sep 08
8 VGE, GATE-EMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 1nF 100pF C iss C oss C rss 0V 0nC 50nC 100nC 150nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =30 A) 10pF 0V 10V 20V V CE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT 300A 250A 200A 150A 100A 50A 0µs 10V 11V 12V 13V 14V 0A 10V 12V 14V 16V 18V V GE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE =600V, start at T J =25 C) V GE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j 150 C) Power Semiconductors 8 Rev. 2.3 Sep 08
9 PG-TO Power Semiconductors 9 Rev. 2.3 Sep 08
10 Power Semiconductors 10 Rev. 2.3 Sep MIN MAX MIN MAX mm Z8B M M PG-TO247-3
11 T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r T C Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =60nH and Stray capacity C σ =40pF. Power Semiconductors 11 Rev. 2.3 Sep 08
12 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.3 Sep 08
I C P tot 138 W
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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