TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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1 Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldsto technology with soft, fast recovery antiarallel Emitter Controlled HE diode Features Very low V CE(sat) 1.5V (ty.) Maximum Junction Temerature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, ums and vacuum cleaners TRENCHSTOP and Fieldsto technology for 600V alications offers : very tight arameter distribution high ruggedness, temerature stable behavior very high switching seed Low EMI Qualified according to JEDEC 1 for target alications Pbfree lead lating; RoHS comliant Comlete roduct sectrum and PSice Models : htt:// G PGTO2633 C E Tye V CE I C;Tc=100 C V CE(sat),Tj=25 C T j,max Marking Package 600V 1.5V 175 C K06T60 PGTO2633 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage, T j 25 C V C E 600 V DC collector current, limited by T jmax T C = 25 C T C = 100 C I C 12 6 Pulsed collector current, t limited by T jmax I C ul s 18 Turn off safe oerating area, V CE = 600V, T j = 175 C, t = 1µs 18 A Diode forward current, limited by T jmax T C = 25 C T C = 100 C I F 12 6 Diode ulsed current, t limited by T jmax I F ul s 18 Gateemitter voltage V G E 20 V Short circuit withstand time 2) V GE = 15V, V CC 400V, T j 150 C t S C 5 s Power dissiation T C = 25 C P t o t 88 W Oerating junction temerature T j Storage temerature T s t g C Soldering temerature (reflow soldering, MSL1) JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Thermal resistance, junction ambient R t h J C 1.7 K/W R t h J C D 2.6 R t h J A 62 R t h J A Footrint 6cm² Cu Electrical Characteristic, at T j = 25 C, unless otherwise secified Parameter Symbol Conditions Static Characteristic Collectoremitter breakdown voltage V ( B R ) C E S V G E =0V, I C =0.25mA Collectoremitter saturation voltage V C E ( s a t ) V G E = 15V, I C = T j =25 C T j =175 C Diode forward voltage V F V G E =0V, I F = T j =25 C T j =175 C Value min. ty. max. 600 V Gateemitter threshold voltage V G E ( t h) I C =0.18mA, V C E =V G E Zero gate voltage collector current I C E S V C E =600V, V G E =0V T j =25 C T j =175 C Gateemitter leakage current I G E S V C E =0V,V G E =20V 100 na Transconductance g f s V C E =20V, I C = 3.6 S Integrated gate resistor R G i n t none Ω Unit µa Dynamic Characteristic Inut caacitance C i s s V C E =25V, 368 F Outut caacitance C o s s V G E =0V, 28 Reverse transfer caacitance C r s s f=1mhz 11 Gate charge Q G a t e V C C =480V, I C = V G E =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) I C ( S C ) V G E =15V,t S C 5 s V C C = 400V, T j = 25 C 42 nc L E 7 nh 55 A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions IGBT Characteristic Value min. ty. max. Turnon delay time t d ( o n ) T j=25 C, 9 ns Rise time t r V C C=400V,I C=, V G E=0/15V,r G=23, 6 Turnoff delay time t d ( o f f ) L =60nH,C =40F 130 Fall time t f 58 Turnon energy E o n L, C from Fig. E Energy losses include 0.09 mj Turnoff energy E o f f tail and diode reverse 0.11 recovery. Total switching energy E t s 0.2 AntiParallel Diode Characteristic Diode reverse recovery time t r r T j =25 C, Diode reverse recovery charge Q r r V R =400V, I F =, 190 nc Diode eak reverse recovery current I r r m di F /dt=55/ s 5.3 A Unit 123 ns Diode eak rate of fall of reverse di r r /dt 450 A/ s recovery current during t b Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions IGBT Characteristic Value min. ty. max. Turnon delay time t d ( o n ) T j=175 C, 9 ns Rise time t r V C C=400V,I C=, V G E=0/15V,r G=23, 8 Turnoff delay time t d ( o f f ) L =60nH,C =40F 165 Fall time t f 84 Turnon energy E o n L, C from Fig. E Energy losses include 0.14 mj Turnoff energy E o f f tail and diode reverse 0.18 recovery. Total switching energy E t s AntiParallel Diode Characteristic Diode reverse recovery time t r r T j =175 C Diode reverse recovery charge Q r r V R =400V, I F =, 500 nc Diode eak reverse recovery current I r r m di F /dt=55/ s 7.6 A Unit 180 ns Diode eak rate of fall of reverse di r r /dt 285 A/ s recovery current during t b IFAG IPC TD VLS 3 Rev

4 18A 1 t =1µs 5µs IC, COLLECTOR CURRENT 15A 12A 9A I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1A 10µs 50µs 500µs 3A I c 100Hz 1kHz 10kHz 100kHz 5ms DC 0,1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 175 C, D = 0.5, V CE = 400V, V GE = 0/15V, r G = 23 ) Figure 2. Safe oerating area (D = 0, T C = 25 C, T j 175 C;V GE =0/15V) 80W 15A Ptot, POWER DISSIPATION 60W 40W 20W IC, COLLECTOR CURRENT 1 5A 0W 25 C 50 C 75 C 100 C 125 C 150 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissiation as a function of case temerature (T j 175 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temerature (V GE 15V, T j 175 C) IFAG IPC TD VLS 4 Rev

5 15A 15A V GE =20V V GE =20V IC, COLLECTOR CURRENT 12A 9A 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 12A 9A 15V 13V 11V 9V 7V 3A 3A 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Tyical outut characteristic (T j = 25 C) 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Tyical outut characteristic (T j = 175 C) IC, COLLECTOR CURRENT 15A 12A 9A 3A =175 C 25 C 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 50 C 0 C 50 C 100 C I C =12A I C = I C =3A V GE, GATEEMITTER VOLTAGE Figure 7. Tyical transfer characteristic (V CE =20V), JUNCTION TEMPERATURE Figure 8. Tyical collectoremitter saturation voltage as a function of junction temerature (V GE = 15V) IFAG IPC TD VLS 5 Rev

6 t d(off) t d(off) 100ns t, SWITCHING TIMES 100ns 10ns t f t d(on) t, SWITCHING TIMES 10ns t f t d(on) t r t r 1ns 3A 9A 12A 15A I C, COLLECTOR CURRENT Figure 9. Tyical switching times as a function of collector current (inductive load, =175 C, V CE = 400V, V GE = 0/15V, r G = 23Ω, 1ns R G, GATE RESISTOR Figure 10. Tyical switching times as a function of gate resistor (inductive load, =175 C, V CE = 400V, V GE = 0/15V, I C =, t, SWITCHING TIMES 100ns 10ns t d(off) t f t d(on) t r VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V 2V 1V max. ty. min. 1ns 50 C 100 C 150 C 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 11. Tyical switching times as a function of junction temerature (inductive load, V CE = 400V, V GE = 0/15V, I C =, r G = 23Ω,, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temerature (I C = 0.18mA) IFAG IPC TD VLS 6 Rev

7 E, SWITCHING ENERGY LOSSES 0,6 mj 0,5 mj 0,4 mj 0,3 mj 0,2 mj 0,1 mj ) E on and E ts include losses due to diode recovery E off E ts E on E, SWITCHING ENERGY LOSSES 0,4 mj 0,3 mj 0,2 mj 0,1 mj ) E on and E ts include losses due to diode recovery E ts E on E off 0,0 mj 2A 4A 8A 1 I C, COLLECTOR CURRENT Figure 13. Tyical switching energy losses as a function of collector current (inductive load, =175 C, V CE =400V, V GE =0/15V, r G =23Ω, 0,0 mj R G, GATE RESISTOR Figure 14. Tyical switching energy losses as a function of gate resistor (inductive load, =175 C, V CE = 400V, V GE = 0/15V, I C =, 0,4mJ ) E on and E ts include losses due to diode recovery 0,5mJ ) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 0,3mJ 0,2mJ 0,1mJ E ts E off E on E, SWITCHING ENERGY LOSSES 0,4mJ 0,3mJ 0,2mJ 0,1mJ E ts E off E on 0,0mJ 50 C 100 C 150 C 0,0mJ 200V 300V 400V 500V, JUNCTION TEMPERATURE Figure 15. Tyical switching energy losses as a function of junction temerature (inductive load, V CE =400V, V GE = 0/15V, I C =, r G = 23Ω, V CE, COLLECTOREMITTER VOLTAGE Figure 16. Tyical switching energy losses as a function of collector emitter voltage (inductive load, = 175 C, V GE = 0/15V, I C =, r G = 23Ω, IFAG IPC TD VLS 7 Rev

8 1nF VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 100F C iss C oss C rss 10F 0V 0nC 10nC 20nC 30nC 40nC 50nC Q GE, GATE CHARGE Figure 17. Tyical gate charge (I C = 6 A) 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Tyical caacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) 12µs IC(sc), short circuit COLLECTOR CURRENT V 14V 16V 18V tsc, SHORT CIRCUIT WITHSTAND TIME 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 12V 13V 14V V GE, GATEEMITTETR VOLTAGE Figure 19. Tyical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) V GE, GATEEMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gateemitter voltage (V CE =400V, start at =25 C, max <150 C) IFAG IPC TD VLS 8 Rev

9 D=0.5 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W D= K/W single ulse R, ( K / W ), ( s ) R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W single ulse R, ( K / W ), ( s ) R 1 R 2 C 1= 1/R 1 C 2= 2/R K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 21. IGBT transient thermal imedance (D = t / T) 10 2 K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 22. Diode transient thermal imedance as a function of ulse width (D=t P /T) 250ns 0,5µC trr, REVERSE RECOVERY TIME 200ns 150ns 100ns 50ns =175 C =25 C Qrr, REVERSE RECOVERY CHARGE 0,4µC 0,3µC 0,2µC 0,1µC =175 C =25 C 0ns 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Tyical reverse recovery time as a function of diode current sloe (V R = 400V, I F =, 0,0µC 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Tyical reverse recovery charge as a function of diode current sloe (V R =400V, I F =6 A, IFAG IPC TD VLS 9 Rev

10 =175 C Irr, REVERSE RECOVERY CURRENT 8A 4A 2A =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 50/µs 40/µs 30/µs 20/µs 10/µs =25 C =175 C 20/µs 40/µs 60/µs 80/µs /µs 20/µs 40/µs 60/µs 80/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Tyical reverse recovery current as a function of diode current sloe (V R = 400V, I F =, di F /dt, DIODE CURRENT SLOPE Figure 26. Tyical diode eak rate of fall of reverse recovery current as a function of diode current sloe (V R = 400V, I F =, 1 2,0V I F =12A IF, FORWARD CURRENT 8A 4A 2A =175 C 25 C VF, FORWARD VOLTAGE 1,5V 1,0V 0,5V 3A 0V 1V 2V 0,0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 27. Tyical diode forward current as a function of forward voltage, JUNCTION TEMPERATURE Figure 28. Tyical diode forward voltage as a function of junction temerature IFAG IPC TD VLS 10 Rev

11 PGTO2633 IFAG IPC TD VLS 11 Rev

12 i,v di F /dt t =t Q =Q + t r r S F + Q r r S F t r r I F t S t F Q S Q F 10% I r r m t I r r m di 90% I r r m r r /dt V R Figure C. Definition of diodes switching characteristics T (t) j 1 r1 2 r 2 r n n (t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 12 Rev

13 Published by Infineon Technologies AG Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With resect to any examles or hints given herein, any tyical values stated herein and/or any information regarding the alication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual roerty rights of any third arty. Information For further information on technology, delivery terms and conditions and rices, lease contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, comonents may contain dangerous substances. For information on the tyes in question, lease contact the nearest Infineon Technologies Office. The Infineon Technologies comonent described in this Data Sheet may be used in lifesuort devices or systems and/or automotive, aviation and aerosace alications or systems only with the exress written aroval of Infineon Technologies, if a failure of such comonents can reasonably be exected to cause the failure of that lifesuort, automotive, aviation and aerosace device or system or to affect the safety or effectiveness of that device or system. Life suort devices or systems are intended to be imlanted in the human body or to suort and/or maintain and sustain and/or rotect human life. If they fail, it is reasonable to assume that the health of the user or other ersons may be endangered. IFAG IPC TD VLS 13 Rev