AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver
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1 AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low R DS(on), Q g and E OSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Product Summary V T j,max 7V 5A I DM R DS(ON),max.5Ω Q g,typ E V nc.7µj % UIS Tested % R g Tested Top View DFN8X8 Bottom View D D Pin:G AOVS6 S S G Pin: Driver Source G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol DrainSource Voltage V DS GateSource Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Power Dissipation B T C = C Power Dissipation A T A =7 C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range V GS I DM I AR E AR E AS T J, T STG Maximum 6 T C =5 C 8 T A =5 C T A =7 C Repetitive avalanche energy C Single pulsed avalanche energy G T C =5 C Derate above 5 o C T A =5 C I D I DSM P D P DSM dv/dt Maximum lead temperature for soldering purpose, /8" from case for 5 seconds J T L 3 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 5 C/W R θja Maximum JunctiontoAmbient A D SteadyState 5 C/W Maximum JunctiontoCase SteadyState R θjc.6.8 C/W ± to 5 Units V V A A A mj mj W W/ o C W V/ns C Rev..: September 3 Page of 7
2 AOVS6 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS I DSS I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V, I D =5µA V R DS(ON) DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Static DrainSource OnResistance..5 Ω.7. Ω V SD Diode Forward Voltage I S =5.5A,V GS =V, T J =5 C.8 V I S Maximum BodyDiode Continuous Current 8 A I SM Maximum BodyDiode Pulsed Current C 5 A DYNAMIC PARAMETERS C iss Input Capacitance 55 pf V GS =V, V DS =V, f=mhz C oss Output Capacitance 37.3 pf C o(er) Effective output capacitance, energy related H V GS =V, V DS = to 8V, f=mhz 3.8 pf C o(tr) Effective output capacitance, time related I 93.6 pf C rss Reverse Transfer Capacitance V GS =V, V DS =V, f=mhz. pf R g Gate resistance V GS =V, V DS =V, f=mhz 6.5 Ω SWITCHING PARAMETERS Q g Total Gate Charge nc Q gs Gate Source Charge V GS =V, V DS =8V, I D =5.5A.8 nc Q gd Gate Drain Charge 3.8 nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =V, V DS =V, I D =5.5A, ns t D(off) TurnOff DelayTime R G =5Ω 59 ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =5.5A,dI/dt=A/µs,V DS =V 5 ns I rm Peak Reverse Recovery Current I F =5.5A,dI/dt=A/µs,V DS =V A Q rr Body Diode Reverse Recovery Charge I F =5.5A,dI/dt=A/µs,V DS =V 3.3 µc THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. I D =5µA, V GS =V, T J =5 C I D =5µA, V GS =V, T J =5 C V DS =6V, V GS =V V DS =8V, T J =5 C V GS =V, I D =3.8A, T J =5 C V GS =V, I D =3.8A, T J =5 C A. The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =5 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =A, V DD =5V, Starting T J =5 C H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. J. Wavesoldering only allowed at leads. V µa Rev..: September 3 Page of 7
3 AOVS6 6 6 V 7V V 7V 8 6V 8 6V 5.5V 5.5V V GS =.5V 5V 5V 5 5 Figure : OnRegion Characteristics@5 C V GS =.5V 5 5 Figure : OnRegion Characteristics@5 C V DS =V 55 C. 5 C 5 C R DS(ON) (Ω).9.6 V GS =V V GS (Volts) Figure 3: Transfer Characteristics Figure : OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance V GS =V I D =3.8A BV DSS (Normalized) Temperature ( C) Figure 5: OnResistance vs. Junction Temperature T J ( o C) Figure 6: Break Down vs. Junction Temperature Rev..: September 3 Page 3 of 7
4 AOVS6.E 5.E.E 5 C V DS =8V I D =5.5A I S (A).E.E.E3.E 5 C V GS (Volts) E V SD (Volts) Figure 7: BodyDiode Characteristics (Note E) 8 6 Q g (nc) Figure 8: GateCharge Characteristics 6 Capacitance (pf) C iss C oss Eoss(uJ) 5 3 E oss C rss Figure 9: Capacitance Characteristics Figure : Coss stored Energy I D (Amps).. R DS(ON) limited T J(Max) =5 C T C =5 C DC Figure : Maximum Forward Biased Safe Operating Area for AOT(B)S6 (Note F) µs µs ms ms E AS (mj) T CASE ( C) Figure : Avalanche energy Rev..: September 3 Page of 7
5 AOVS6 8 6 T J(Max) =5 C T C =5 C Current rating 6 Power (W) T CASE ( C) Figure : Current Derating (Note B) E5.... Figure : Single Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =.8 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T Figure 5: Normalized Maximum Transient Thermal Impedance (Note F) Rev..: September 3 Page 5 of 7
6 AOVS6 8 T J(Max) =5 C T A =5 C Power (W) 6... Figure 6: Single Pulse Power Rating JunctiontoAmbient (Note G) Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.,., single pulse P D. Single Pulse T on T Figure 7: Normalized Maximum Transient Thermal Impedance (Note G) Rev..: September 3 Page 6 of 7
7 AOVS6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: September 3 Page 7 of 7
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CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
More informationIXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S
X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6
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Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
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PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
More informationMaximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
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SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
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SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
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CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability
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CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
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PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
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More informationPreliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary
More informationFinal data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package
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SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated
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SPPN6C, SPBN6C SPN6C Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances PTO33
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