AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver

Size: px
Start display at page:

Download "AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver"

Transcription

1 AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low R DS(on), Q g and E OSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Product Summary V T j,max 7V 5A I DM R DS(ON),max.5Ω Q g,typ E V nc.7µj % UIS Tested % R g Tested Top View DFN8X8 Bottom View D D Pin:G AOVS6 S S G Pin: Driver Source G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol DrainSource Voltage V DS GateSource Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Power Dissipation B T C = C Power Dissipation A T A =7 C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range V GS I DM I AR E AR E AS T J, T STG Maximum 6 T C =5 C 8 T A =5 C T A =7 C Repetitive avalanche energy C Single pulsed avalanche energy G T C =5 C Derate above 5 o C T A =5 C I D I DSM P D P DSM dv/dt Maximum lead temperature for soldering purpose, /8" from case for 5 seconds J T L 3 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A t s 5 C/W R θja Maximum JunctiontoAmbient A D SteadyState 5 C/W Maximum JunctiontoCase SteadyState R θjc.6.8 C/W ± to 5 Units V V A A A mj mj W W/ o C W V/ns C Rev..: September 3 Page of 7

2 AOVS6 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS I DSS I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V, I D =5µA V R DS(ON) DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Static DrainSource OnResistance..5 Ω.7. Ω V SD Diode Forward Voltage I S =5.5A,V GS =V, T J =5 C.8 V I S Maximum BodyDiode Continuous Current 8 A I SM Maximum BodyDiode Pulsed Current C 5 A DYNAMIC PARAMETERS C iss Input Capacitance 55 pf V GS =V, V DS =V, f=mhz C oss Output Capacitance 37.3 pf C o(er) Effective output capacitance, energy related H V GS =V, V DS = to 8V, f=mhz 3.8 pf C o(tr) Effective output capacitance, time related I 93.6 pf C rss Reverse Transfer Capacitance V GS =V, V DS =V, f=mhz. pf R g Gate resistance V GS =V, V DS =V, f=mhz 6.5 Ω SWITCHING PARAMETERS Q g Total Gate Charge nc Q gs Gate Source Charge V GS =V, V DS =8V, I D =5.5A.8 nc Q gd Gate Drain Charge 3.8 nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =V, V DS =V, I D =5.5A, ns t D(off) TurnOff DelayTime R G =5Ω 59 ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =5.5A,dI/dt=A/µs,V DS =V 5 ns I rm Peak Reverse Recovery Current I F =5.5A,dI/dt=A/µs,V DS =V A Q rr Body Diode Reverse Recovery Charge I F =5.5A,dI/dt=A/µs,V DS =V 3.3 µc THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. I D =5µA, V GS =V, T J =5 C I D =5µA, V GS =V, T J =5 C V DS =6V, V GS =V V DS =8V, T J =5 C V GS =V, I D =3.8A, T J =5 C V GS =V, I D =3.8A, T J =5 C A. The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =5 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =A, V DD =5V, Starting T J =5 C H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. J. Wavesoldering only allowed at leads. V µa Rev..: September 3 Page of 7

3 AOVS6 6 6 V 7V V 7V 8 6V 8 6V 5.5V 5.5V V GS =.5V 5V 5V 5 5 Figure : OnRegion Characteristics@5 C V GS =.5V 5 5 Figure : OnRegion Characteristics@5 C V DS =V 55 C. 5 C 5 C R DS(ON) (Ω).9.6 V GS =V V GS (Volts) Figure 3: Transfer Characteristics Figure : OnResistance vs. Drain Current and Gate Voltage Normalized OnResistance V GS =V I D =3.8A BV DSS (Normalized) Temperature ( C) Figure 5: OnResistance vs. Junction Temperature T J ( o C) Figure 6: Break Down vs. Junction Temperature Rev..: September 3 Page 3 of 7

4 AOVS6.E 5.E.E 5 C V DS =8V I D =5.5A I S (A).E.E.E3.E 5 C V GS (Volts) E V SD (Volts) Figure 7: BodyDiode Characteristics (Note E) 8 6 Q g (nc) Figure 8: GateCharge Characteristics 6 Capacitance (pf) C iss C oss Eoss(uJ) 5 3 E oss C rss Figure 9: Capacitance Characteristics Figure : Coss stored Energy I D (Amps).. R DS(ON) limited T J(Max) =5 C T C =5 C DC Figure : Maximum Forward Biased Safe Operating Area for AOT(B)S6 (Note F) µs µs ms ms E AS (mj) T CASE ( C) Figure : Avalanche energy Rev..: September 3 Page of 7

5 AOVS6 8 6 T J(Max) =5 C T C =5 C Current rating 6 Power (W) T CASE ( C) Figure : Current Derating (Note B) E5.... Figure : Single Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =.8 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T Figure 5: Normalized Maximum Transient Thermal Impedance (Note F) Rev..: September 3 Page 5 of 7

6 AOVS6 8 T J(Max) =5 C T A =5 C Power (W) 6... Figure 6: Single Pulse Power Rating JunctiontoAmbient (Note G) Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =5 C/W In descending order D=.5,.3,.,.5,.,., single pulse P D. Single Pulse T on T Figure 7: Normalized Maximum Transient Thermal Impedance (Note G) Rev..: September 3 Page 6 of 7

7 AOVS6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: September 3 Page 7 of 7

AOD4184A 40V N-Channel MOSFET

AOD4184A 40V N-Channel MOSFET 4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D

V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized

More information

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery

More information

AON V N-Channel SRFET

AON V N-Channel SRFET AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1 AON7556 3V NChannel AlphaMOS General Description Trench Power AlphaMOS (αmos LV) technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V AON7 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at 4.V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

AOD466 N-Channel Enhancement Mode Field Effect Transistor

AOD466 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1 AON74B 3V NChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

AON6266E 60V N-Channel AlphaSGT TM

AON6266E 60V N-Channel AlphaSGT TM 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant

More information

AON V Channel AlphaSGT TM

AON V Channel AlphaSGT TM AON6 V Channel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Driven RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View AON78 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 3V NChannel MOSFET General Description Trench Power MOSFET technology Very Low R DS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

AONR V P-Channel MOSFET

AONR V P-Channel MOSFET 3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS

More information

AON V N-Channel MOSFET

AON V N-Channel MOSFET AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D

More information

AO V Dual N-Channel MOSFET

AO V Dual N-Channel MOSFET AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable

More information

AON V Common-Drain Dual N-Channel MOSFET

AON V Common-Drain Dual N-Channel MOSFET 2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree

More information

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG

Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol 3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary

More information

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60 AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness

More information

AOP605 Complementary Enhancement Mode Field Effect Transistor

AOP605 Complementary Enhancement Mode Field Effect Transistor AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View AON77 V NChannel MOFET RFET TM General Description RFET TM AON77 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device

More information

AO4620 Complementary Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

AO V Dual P + N-Channel MOSFET

AO V Dual P + N-Channel MOSFET 4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters

More information

AOT404 N-Channel Enhancement Mode Field Effect Transistor

AOT404 N-Channel Enhancement Mode Field Effect Transistor AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G

More information

AON4605 Complementary Enhancement Mode Field Effect Transistor

AON4605 Complementary Enhancement Mode Field Effect Transistor AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form

More information

AOP606 Complementary Enhancement Mode Field Effect Transistor

AOP606 Complementary Enhancement Mode Field Effect Transistor AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

AOD444/AOI444 60V N-Channel MOSFET

AOD444/AOI444 60V N-Channel MOSFET AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

Top View. Top View S2 G2 S1 G1

Top View. Top View S2 G2 S1 G1 AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low

More information

V DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2

V DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2 3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.

More information

AON7404G 20V N-Channel MOSFET

AON7404G 20V N-Channel MOSFET AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A

More information

AO3411 P-Channel Enhancement Mode Field Effect Transistor

AO3411 P-Channel Enhancement Mode Field Effect Transistor January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

AO7401 P-Channel Enhancement Mode Field Effect Transistor

AO7401 P-Channel Enhancement Mode Field Effect Transistor Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,

More information

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.

Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0. V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion

More information

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation

More information

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPU7N6S5 SPD7N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 Ultra low gate charge Periodic avalanche rated Extreme dv/dt

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor OD452 N-Channel Enhancement Mode Field Effect Transistor General Description The OD452 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L. AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

AO V Complementary Enhancement Mode Field Effect Transistor

AO V Complementary Enhancement Mode Field Effect Transistor AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used

More information

AO V Dual N-Channel MOSFET

AO V Dual N-Channel MOSFET 3V Dual N-Channel MOFET RFET TM General Description RFET TM The AO9 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON) and low gate charge. This

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;

More information

CoolMOS Power Transistor

CoolMOS Power Transistor IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPP24N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak

More information

P-TO Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current

P-TO Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current SPP7N6C3 SPI7N6C3, SP7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge I D 7.3 Periodic avalanche rated PGTOFP PGTO6

More information

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D. SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability

More information

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified

More information

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S

IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6

More information

TO-247-3L Inner Circuit Product Summary I C) R DS(on)

TO-247-3L Inner Circuit Product Summary I C) R DS(on) Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.

Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90. SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5

More information

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage

More information

CoolMOS Power Transistor

CoolMOS Power Transistor CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS

More information

SPP20N60S5. Cool MOS Power Transistor V DS 600 V

SPP20N60S5. Cool MOS Power Transistor V DS 600 V SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

not recommended for new designs

not recommended for new designs CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor AO4 N-Channel Enhancement Mode Field Effect Transistor eneral escription The AO4 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for

More information

PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab

PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting

More information

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs

More information

PG-TO220FP P G-TO262 PG-TO220. Maximum Ratings Parameter Symbol Value Unit

PG-TO220FP P G-TO262 PG-TO220. Maximum Ratings Parameter Symbol Value Unit SPP21N5C3 SPI21N5C3, SP21N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).19 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 I D 21 Ultra low gate charge

More information

IXTA24N65X2 IXTP24N65X2 IXTH24N65X2

IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 Preliminary Technical Information X2-Class Power MOSFET S I D25 R DS(on) = 65V = A 15m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 65 V V DGR = 25

More information

IXFT100N30X3HV IXFH100N30X3

IXFT100N30X3HV IXFH100N30X3 X3-Class HiPerFET TM Power MOSFET Advance Technical Information IXFTN3X3HV IXFHN3X3 V DSS = 3V I D25 = A R DS(on) 13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol Test Conditions

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product

More information

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary

More information

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C I D 20.7

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C I D 20.7 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).22 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability

More information

SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V

SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-

More information

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated

More information

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using 400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SPP11N60C2, SPB11N60C2 SPA11N60C2. Cool MOS Power Transistor. Operating and storage temperature T j, T stg C.

SPP11N60C2, SPB11N60C2 SPA11N60C2. Cool MOS Power Transistor. Operating and storage temperature T j, T stg C. SPPN6C, SPBN6C SPN6C Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances PTO33

More information

Final data. Marking 11N60C3 11N60C3 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPP_B_I. SPA Continuous drain current I D

Final data. Marking 11N60C3 11N60C3 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value Unit SPP_B_I. SPA Continuous drain current I D SPPN6C3, SPBN6C3 SPIN6C3, SPN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).38 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme

More information