Insulated Gate Bipolar Transistor (IGBT)

Transcription

1 BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V The device is intended for use in I C Collector current (DC) 24 A motor control, DC/DC and AC/DC P tot Total power dissipation 25 W converters, and in general purpose V CEsat Collector-emitter on-state voltage 3.5 V high frequency switching E off Turn-off energy Loss. mj applications. PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION gate tab c 2 collector 3 emitter g tab collector 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CE Collector-emitter voltage V V CGR Collector-gate voltage R GE = 2 kω - 8 V ±V GE Gate-emitter voltage V I C Collector current (DC) T mb = 25 C - 24 A I C Collector current (DC) T mb = C - 2 A I CLM Collector Current (Clamped T j T j. - 4 A Inductive Load) V CL 5 V I CM Collector current (pulsed peak value, T j T j. - 5 A on-state) P tot Total power dissipation T mb = 25 C - 25 W T stg Storage temperature C T j Junction Temperature C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - -. K/W R th j-a Junction to ambient In free air 6 - K/W March 993 Rev.

2 BUK856-8A STATIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CES Collector-emitter breakdown V GE = V; I C =.25 ma V voltage V GE(TO) Gate threshold voltage V CE = V GE ; I C = ma V I CES Zero gate voltage collector V CE = 8 V; V GE = V; T j = 25 C - 2 µa current I CES Zero gate voltage collector V CE = 8 V; V GE = V; T j =25 C -.2 ma current I ECS Reverse collector current V CE = -5 V; V GE = V -. 5 ma I GES Gate emitter leakage current V GE = ±3 V; V CE = V - na V CEsat Collector-emitter saturation V GE = 5 V; I C = 2 A V voltage V GE = 5 V; I C = 24 A V DYNAMIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fe Forward transconductance V CE = 5 V; I C = 6 A S C ies Input capacitance V GE = V; V CE = 25 V; f = MHz pf C oes Output capacitance pf C res Feedback capacitance pf t d on Turn-on delay time I C = 2 A; V CC = 5 V; ns t r Turn-on rise time V GE = 5 V; R G = 25Ω; ns E on Turn-on Energy Loss T j = 25 C; mj t d off Turn-off delay time Inductive Load ns t f Turn-off fall time Energy Losses include all tail ns E off Turn-off Energy Loss losses -.5 mj t d on Turn-on delay time I C = 2 A; V CC = 5 V; ns t r Turn-on rise time V GE = 5 V; R G = 25Ω; ns E on Turn-on Energy Loss T j = 25 C; mj t d off Turn-off delay time Inductive Load ns t f Turn-off fall time Energy Losses include all tail ns E off Turn-off Energy Loss losses - 2 mj March Rev.

3 BUK856-8A E+ Zth j-mb / (K/W) BUK8Y6-8A E+ E- E-2 D = D = T T t E-3 E-7 E-5 E-3 E- E+ t / s Fig.. Transient thermal impedance Z th j-mb = f(t) ; parameter D = t p /T P D tp tp VCE / V Fig.4. Typical output characteristics, T j =25 C. I C =f(v CE ); parameter V GE VGE / V = PD% Normalised Power Derating Tmb / C Fig.2. Normalised power dissipation. PD% =.P D /P D 25 C = f(t mb ) VGE / V = 5 BUK8Y6-8A Tj / C = VCEsat / V Fig.5. Typical on-state characteristics I C =f(v CE ); parameters T j, V GE I CLM BUK8y6-8 5 Tj / C = 25 5 BUK8Y6-8A VCE / V Fig.3. Turn-off Safe Operating Area conditions: T j T j. ; R G = 5 Ω VGE / V Fig.6. Typical transfer characteristics I C =f(v GE ) ; conditions: V CE =5 V; parameter T j March Rev.

4 BUK856-8A 5 gfe / S BUK8Y6-8A C / pf BUK8Y6-8A Cies 5 Coes Cres VDS / V Fig.7. Typical transconductance, T j = 25 C. g fe = f(i C ); conditions: V CE = 5 V Fig.. Typical capacitances, C ies, C oes, C res. C = f(v CE ); conditions: V GE = V; f = MHz. 6 VGE / V BUK8Y6-8A 5 dvce/dt (V/ns) BUK8Y6-8A QG / nc Rg / Ohm Fig.8. Typical turn-on gate-charge characteristics. V GE = f(q G ); conditions: I C = 2 A; parameter V CE Fig.. Typical turn-off dv CE /dt vs. R G conditions: I C = 2 A; V CL = 5 V; T j = 25 C 6 t / ns BUK8Y6-8A.5 E / mj BUK8Y6-8A E(on) E(off) Tj / C Fig.9. Typical Switching Times vs. T j conditions: I C = 2 A; V CL = 5 V; R G = 25 Ω Tj / C Fig.2. Typical Switching losses vs. T j conditions: I C = 2 A; V CL = 5 V; R G = 25 Ω March Rev.

5 BUK856-8A t / ns BUK8Y6-8A 4 E(off) / mj BUK8Y6-8A 3 2 Rg / Ohm Fig.3. Typical Switching Times vs. R G conditions: I C = 2 A; V CL = 5 V; T j = 25 C Rg / Ohm Fig.6. Typical Energy loss at turn-off vs. R G conditions: I C = 2 A; V CL = 5 V; T j = 25 C 5 t / ns BUK8Y6-8A E(off) / mj 4 BUK8Y6-8A 4 3 VCL / V = Fig.4. Typical Switching Times vs. I C conditions: V CL = 5 V; R G = 25 Ω; T j = 25 C Fig.7. Typical Energy loss at turn-off vs. I C conditions: V CL = 5 V; R G = 25 Ω; T j = 25 C; parameter V CL VCC = VCL Lc t p : adjust for correct Ic D.U.T. RG VGE IC measure V R Fig.5. Test circuit for inductive load switching times. I IC 9% tr % V td(on) t VGE VCE 9% tc % t Fig.8. Inductive Load Switching Times definitions. March Rev.

6 BUK856-8A MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5,3 3,7,3 2,8 5,9 min 5,8 3, not tinned,3 (2x) 2 3 2,54 2,54 3, 3,5 min,9 (3x),6 2,4 Fig.9. TO22AB; pin 2 connected to mounting base. Notes. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO22 envelopes. 3. Epoxy meets UL94 V at /8". March Rev.

7 BUK856-8A DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March Rev.