Industrial motor drives 175 C maximum operating junction temperature
|
|
- Silas Norris
- 5 years ago
- Views:
Transcription
1 Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. xr SiC Series 2A - 12 SiC Schottky Diode UJ2D122K. CASE 1 2 CASE Part Number Package Marking UJ2D122K TO-247-3L UJ2D122K Features Typical Applications Positive temperature coefficient for safe operation and ease of Power converters paralleling Industrial motor drives 175 C maximum operating junction temperature Switching-mode power supplies Extremely fast switching not dependent on temperature Power factor correction modules Essentially no reverse or forward recovery RoHS compliant Maximum Ratings Parameter DC blocking voltage Repetitive peak reverse voltage, T j =25 C Maximum DC forward current Non-repetitive forward surge current sine halfwave Non-repetitive avalanche energy Soldering temperatures, wavesoldering only allowed at leads Symbol Surge peak reverse voltage 12 Repetitive forward surge current sine halfwave, D=.1 Power dissipation Maximum junction temperature Operating and storage temperature R RRM RSM I F I FSM I FRM E AS Test Conditions T C = 142 C T j = 25 C, L = 1mH, Ipk=4.1A/Leg, DD =1 T C = 25 C P Tot T C = 142 C alue (Leg/Device) /2 T C = 25 C, t p = 1ms 75/15 T C = 11 C, t p =1ms 6/12 T C = 25 C, t p = 1ms 35/7 T C = 11 C, t p =1ms 21.8/ / /272 3/6 Units T J,max 175 C T J, T STG -55 to 175 C T 1.6mm from case for sold 26 C 1s A A A mj W Rev. B, October For more information go to
2 Reverse Current, I R (A) Forward Current, I F (A) Electrical Characteristics xr SiC Series 2A - 12 SiC Schottky Diode UJ2D122K. T J = +25 C unless otherwise specified Parameter Symbol Test Conditions alue (Leg/Device) Min Typ Max Units Forward voltage F I F = 2A, T J = 25 C I F = 2A, T J =175 C /6 25/5 Reverse current I R =12, T j =25 C R R =12, T J =175 C - 6/12 8/16 ma Total capacitive charge (1) Q C R =8 47/94 nc Total capacitance C R =1, f=1mhz R =4, f=1mhz R =8, f=1mhz 5/1 45/9 35/7 pf Capacitance stored energy E C R =8 12.2/24.4 mj (1) See Figure 8, Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_AN11. Thermal characteristics Thermal resistance Parameter alue (Leg/Device) symbol Test Conditions Units Min Typ Max R qjc.83/ /.55 C/W Typical Performance (Per Leg) 1.E E E E-7-55 C 5 1.E C 175 C 1.E C 25 C 1 C 15 C 175 C Forward oltage, F () Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics Rev. B, October For more information go to
3 Capacitance, C (pf) Max. Thermal Impedance, Z qjc ( C/W) Power Disspiation, P Tot (W) Forward Current,I F (A) xr SiC Series 2A - 12 SiC Schottky Diode UJ2D122K D =.1 D =.3 D =.5 D =.7 D = T C ( C) Figure 3 Power dissipation T C ( C) Figure 4 Diode forward current D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse Figure 5 Capacitance vs. reverse voltage.1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 6 Maximum transient thermal impedance Rev. B, October For more information go to
4 E C (mj) Q C (nc) xr SiC Series 2A - 12 SiC Schottky Diode UJ2D122K Q C = R C d Figure 7 Typical capacitance stored energy vs. reverse voltage Figure 8 Typical capacitive charge vs. reverse voltage Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, October For more information go to
5 TO 247 3L OUTLINE TO 247 3L DIODE OUTLINE, MARK AND TUBE.. Rev. B, October For more information go to
6 PART MARKING TO 247 3L DIODE OUTLINE, MARK AND TUBE.. U = JXD = X = AA = BB = K = USCi DIODE GENERATION OLTAGE RATING CURRENT RATING TO 247 3L DDDD= DATE CODE LLLL = LOT CODE TO 247 TUBE OUTLINE Disclaimer 3 units per tube United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. Rev. B, October For more information go to
Industrial motor drives 175 C maximum operating junction temperature
Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationxr SiC Series... 10A - 650V SiC Schottky with Surge Bypass Diode... UJDS06510T...
Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes
More informationPart Number UJDS06508T
Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature
More informationOver Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationIDW10G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon Carbide No reverse
More informationSilicon Carbide Schottky Diode IDW30G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode IDW3G12C5B Final Datasheet Rev. 2.1 217721 Industrial Power Control IDW3G12C5B CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon
More informationGB2X100MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More information2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More information2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
More informationGC15MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationOver Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low
More information3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationSilicon Carbide Schottky Diode IDH05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control thinq! TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW24G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationSilicon Carbide Schottky Diode IDH02G120C5. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH02G120C5 Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode IDH02G120C5 Features: Revolutionary semiconductor material Silicon
More informationSiC. Silicon Carbide Diode. 1200V SiC Schottky Diode IDW 1 0 S Rev. 2.0,< >
SiC Silicon Carbide Diode thinq! TM SiC Schottky Diode 12V SiC Schottky Diode IDW 1 S 1 2 Final Datasheet Rev. 2., Power Management & Multimarket thinq! SiC Schottky Diode 1 Description The 12V
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDY10S120
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.1, 2011-05-25 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationGB01SLT V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 160 C) = 1 A Q C = 4 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationthinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
More informationI F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 212-12-1 Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW 1 0 G 6 5 C 5. Rev. 2.0 < >
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode IDW 1 G 6 5 C 5 Final Datasheet Rev. 2. Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description
More informationGC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW40G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationLow VF SMD Schottky Barrier Diode
Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing
More informationSilicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDM05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No reverse
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 22-2- Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode Description ThinQ! Generation
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDV05S60C
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.0, 2010-01-08 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationSTPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery
Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C
More informationC2D20120D Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D212D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 29 A ** Q c = 122 nc ** Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency
More informationcase TO 252 T C = 25 C, t P = 10 ms 18
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationI F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs
High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge
More informationGAP3SLT33-220FP 3300 V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 3300 V I F (Tc 125 C) = 0.3 A Q C = 3 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationcase T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationBAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode
Small Signal Product mw Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDL04G65C5. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Data Sheet Rev. 2., 213-12-5 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationFFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A
FFSH212ADN-F85 Silicon Carbide Schottky Diode 12 V, 2 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationFFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.
FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery
More informationFFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
More information6 th Generation CoolSiC
6 th Generation CoolSiC 650V SiC Schottky Diode The CoolSiC Generation 6 is the leading edge technology from Infineon for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process
More informationFFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.
FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A
FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More information200mA, 30V Schottky Barrier Diode
200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More informationT C = 25 C, t P = 10 ms 2
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of V F Fast switching
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
More informationFFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.
FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationV30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
More informationBAT54 / A / C / S Taiwan Semiconductor
230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant
More informationV20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
More informationCoolMOS TM Power Transistor
IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
More informationCoolMOS Power Transistor
IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationC3D16065D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1665D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
More informationSTTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features
STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt
More informationIDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
More information350mW, SMD Switching Diode
350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More informationHigh Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
More informationC2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationC2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
More informationFFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A
Silicon Carbide Schottky Diode 12 V, 3 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to
More informationSTTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features
STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters
More informationnot recommended for new designs
CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability
More informationHigh-Voltage Schottky Rectifier
High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability
More informationC3D08065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D865 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 11 Q c = 2 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationMaximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationSurge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
More informationC3D04065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationFFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationIDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationBYW52 / 53 / 54 / 55 / 56
Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current
More informationParameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC
IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent
More informationPlease note the new package dimensions arccording to PCN A
SPW5N5C3 CoolMOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO-47 Ultra low gate charge Periodic avalanche rated Extreme
More information