N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

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l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation

1 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO8 has been modified through a customized leadframe for enhanced thermal characteristics and multipledie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 IRF7105 HEXFET Power MOSFET NCHANNEL MOSFET D1 D1 D2 D2 PCHANNEL MOSFET NCh PCh DSS R DS(on) 0.10Ω 0.25Ω Top iew I D 3.5A 2.3A SO8 Absolute Maximum Ratings Parameter Max. NChannel PChannel Units I T A = 25 C Continuous Drain I T A = 70 C Continuous Drain A I DM Pulsed Drain Current P C = 25 C Power Dissipation 2.0 W Linear Derating Factor W/ C GatetoSource oltage ± 20 dv/dt Peak Diode Recovery dv/dt /ns T J, T STG Junction and Storage Temperature Range 55 to 150 C Thermal Resistance Ratings Parameter Min. Typ. Max. Units R θja Maximum JunctiontoAmbient 62.5 C/W 1

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions (BR)DSS DraintoSource Breakdown oltage NCh 25 = 0, I D = 250µA PCh 25 = 0, I D = 250µA (BR)DSS / T J Breakdown oltage Temp. Coefficient NCh Reference to 25 C, I D = 1mA / C PCh Reference to 25 C, I D = 1mA R DS(ON) Static DraintoSource OnResistance = 10, I D = 1.0A ƒ NCh = 4.5, I D = 0.50A ƒ Ω = 10, I D = 1.0A ƒ PCh = 4.5, I D = 0.50A ƒ (th) Gate Threshold oltage NCh DS =, I D = 250µA PCh DS =, I D = 250µA g fs Forward Transconductance NCh 4.3 DS = 15, I D = 3.5A ƒ S PCh 3.1 DS = 15, I D = 3.5A ƒ NCh 2.0 DS = 20, = 0 I DSS DraintoSource Leakage Current PCh 2.0 DS = 20, = 0, µa NCh 25 DS = 20, = 0, T J = 55 C PCh 25 DS = 20, = 0, T J = 55 C I GSS GatetoSource Forward Leakage NP ±100 = ± 20 Q g Total GateCharge NCh NChannel PCh I Q gs GatetoSource Charge NCh 1.7 D = 2.3A, DS = 12.5, = 10 nc ƒ PCh 1.9 PChannel Q gd GatetoDrain ("Miller") Charge NCh 3.1 I PCh 2.8 D = 2.3A, DS = 12.5, = 10 t d(on) TurnOn Delay Time NCh NChannel PCh t r Rise Time NCh DD = 25, I D = 1.0A, R G = 6.0Ω, R PCh D = 25Ω ns t d(off) TurnOff Delay Time NCh PChannel PCh t f Fall Time NCh DD = 25, I D = 1.0A, R G = 6.0Ω, R PCh D = 25Ω ƒ L D Internal Drain Inductace NP 4.0 Between lead, 6mm (0.25in.)from nh L S Internal Source Inductance NP 6.0 package and center of die contact C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance SourceDrain Ratings and Characteristics NCh 330 PCh 290 NCh 250 PCh 210 NCh 61 PCh 67 Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) NCh 2.0 PCh 2.0 I SM Pulsed Source Current (Body Diode) NCh 14 PCh 9.2 A SD t rr Q rr Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge NCh 1.2 T J = 25 C, I S = 1.3A, = 0 ƒ PCh 1.2 T J = 25 C, I S = 1.3A, = 0 ƒ NCh ns NChannel PCh T J = 25 C, I F = 1.3A, di/dt = 100A/µs NCh nc PChannel ƒ PCh T J = 25 C, I F = 1.3A, di/dt = 100A/µs t on Forward TurnOn Time NP Intrinsic turnon time is neglegible (turnon is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by ƒ Pulse width 300µs; duty cycle 2%. max. junction temperature. NChannel I SD 3.5A, di/dt 90A/µs, DD (BR)DSS, T J 150 C PChannel I SD 2.3A, di/dt 90A/µs, DD (BR)DSS, T J 150 C 2 pf NChannel = 0, DS = 15, ƒ = 1.0MHz PChannel = 0, DS = 15, ƒ = 1.0MHz Surface mounted on FR4 board, t 10sec.

3 NChannel IRF7105 I D, DraintoSource Current ( A ) I D, DraintoSource Current ( A ) DS, DraintoSource oltage ( ) DS, DraintoSource oltage ( ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current ( A ) R DS (on), DraintoSource On Resistance ( Normalized), GatetoSource oltage ( ) T J, Junction Temperature ( C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance s. Temperature C, Capacitance ( pf ), GatetoSource oltage ( ) DS, DraintoSource oltage ( ) Q G, Total Gate Charge ( nc ) Fig 5. Typical Capacitance s. DraintoSource oltage Fig 6. Typical Gate Charge s. GatetoSource oltage 3

4 NChannel I SD, Reverse Drain Current ( A ) I D, Drain Current ( A ) SD, SourcetoDrain oltage ( ) DS, DraintoSource oltage ( ) Fig 7. Typical SourceDrain Diode Forward oltage Fig 8. Maximum Safe Operating Area DS R D I D, Drain Current ( A ) R G 10 Pulse Width 1 µs Duty Factor 0.1 % D.U.T. DD Fig 10a. Switching Time Test Circuit T A, Ambient Temperature ( C ) Fig 9. Maximum Drain Current s. Ambient Temperature Current Regulator Same Type as D.U.T. DS 90% 10% t d(on) t r t d(off) t f 12.2µF 50KΩ.3µF Fig 10b. Switching Time Waveforms D.U.T. DS 10 Q G Q GS Q GD 4 3mA I G I D Current Sampling Resistors Fig 11a. Gate Charge Test Circuit G Charge Fig 11b. Basic Gate Charge Waveform

5 PChannel IRF7105 Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics Fig 14. Typical Transfer Characteristics Fig 15. Normalized OnResistance s. Temperature C, Capacitance ( pf ), GatetoSource oltage ( ) I D, DraintoSource Current ( A ) R DS (on), DraintoSource On Resistance ( Normalized) I D, DraintoSource Current ( A ) I D, DraintoSource Current ( A ) DS, DraintoSource oltage ( ) DS, DraintoSource oltage ( ), GatetoSource oltage ( ) T J, Junction Temperature ( C ) DS, DraintoSource oltage ( ) Q G, Total Gate Charge ( nc ) Fig 16. Typical Capacitance s. DraintoSource oltage Fig 17. Typical Gate Charge s. GatetoSource oltage 5

6 PChannel I SD, Reverse Drain Current ( A ) I D, Drain Current ( A ) SD, SourcetoDrain oltage ( ) DS, DraintoSource oltage ( ) Fig 18. Typical SourceDrain Diode Forward oltage Fig 19. Maximum Safe Operating Area DS R D I D, Drain Current ( A ) R G 10 Pulse Width 1 µs Duty Factor 0.1 % D.U.T. DD Fig 21a. Switching Time Test Circuit T A, Ambient Temperature ( C ) Fig 20. Maximum Drain Current s. Ambient Temperature Current Regulator Same Type as D.U.T. DS 90% 10% t d(on) t r t d(off) t f 12.2µF 50KΩ.3µF Fig 21b. Switching Time Waveforms D.U.T. DS 10 Q G Q GS Q GD 6 3mA I G I D Current Sampling Resistors Fig 22a. Gate Charge Test Circuit G Charge Fig 22b. Basic Gate Charge Waveform

7 N & PChannel IRF Thermal Response (Z thja ) 10 1 D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thja TA t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 23. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient 7

8 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** * R G dv/dt controlled by R G I SD controlled by Duty Factor "D" D.U.T. Device Under Test * DD * Reverse Polarity for PChannel ** Use PChannel Driver for PChannel Measurements Driver Gate Drive Period P.W. D = P.W. Period [ =10 ] *** D.U.T. I SD Waveform Reverse Recovery Current ReApplied oltage Body Diode Forward Current di/dt D.U.T. DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Ripple 5% Forward Drop [ DD ] [ ] I SD *** = 5.0 for Logic Level and 3 Drive Devices Fig 24. For N and P Channel HEXFETS 8

9 SO8 Package Details Dimensions are shown in millimeters (inches) 5 E A D B H 0.25 (.010) M A M e K x 45 6X θ e1 θ A C 0.10 (.004) L 6 C A1 B 8X 8X 8X 0.25 (.010) M C A S B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. DIM INCHES MILLIMETERS MIN MAX MIN MAX A A B C D E e.050 BASIC 1.27 BASIC e1.025 BASIC BASIC H K L θ RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO8 Part Marking 9

10 SO8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA481 & EIA (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA481 & EIA (.566 ) (.488 )

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)