Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units

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1 l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The O8 has been modified through a customized leadframe for enhanced thermal characteristics and dualdie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. G Top View P HEXFET Power MOFET O8 V = 20V R (on) = 0.060Ω I = 5.3 bsolute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 10V 5.3 T = 70 C Continuous rain Current, V 10V 4.2 I M Pulsed rain Current 21 C = 25 C Power issipation 2.5 W Linear erating Factor W/ C V G Gatetoource Voltage ± 12V dv/dt Peak iode Recovery dv/dt 1.7 V/n T J, T TG Junction and torage Temperature Range 55 to 150 C Thermal Resistance Ratings Parameter Min. Typ. Max. Units R θj Maximum Junctiontombient 50 C/W 10/6/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR) raintoource Breakdown Voltage 20 V V G = 0V, I = 250µ V (BR)/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = 1m R (ON) tatic raintoource OnResistance V G = 10V, I = 5.3 ƒ Ω 0.10 V G = 4.5V, I = 2.0 ƒ V G(th) Gate Threshold Voltage V V = V G, I = 250µ g fs Forward Transconductance 7.9 V = 15V, I = 5.3 ƒ I raintoource Leakage Current 25 V = 16V, V G = 0V µ 250 V = 16V, V G = 0V, T J = 125 C Gatetoource Forward Leakage 100 V G = 12V I G n Gatetoource Reverse Leakage 100 V G = 12V Q g Total Gate Charge 25 I = 5.3 Q gs Gatetoource Charge 5.0 nc V = 10V Q gd Gatetorain ("Miller") Charge 8.0 V G = 10V ƒ t d(on) TurnOn elay Time V = 10V t r Rise Time I = 1.0 ns t d(off) TurnOff elay Time R G = 6.0Ω t f Fall Time R = 10Ω ƒ L Internal rain Inductance 2.5 Between lead,6mm(0.25in.) nh from package and center L Internal ource Inductance 4.0 of die contact G C iss Input Capacitance 860 V G = 0V C oss Output Capacitance 750 pf V = 10V C rss Reverse Transfer Capacitance 230 ƒ = 1.0MHz ourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 2.5 (Body iode) showing the I M Pulsed ource Current integral reverse G 15 (Body iode) pn junction diode. V iode Forward Voltage 1.2V T J = 25 C, I = 1.25, V G = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.4 Q rr Reverse RecoveryCharge nc di/dt = 100/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width 300µs; duty cycle 2%. I 5.3, di/dt 90/µs, V V (BR), T J 150 C urface mounted on FR4 board, t 10sec.

3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintoource Current ( ) R (on), raintoource On Resistance ( Normalized) I, raintoource Current ( ) I, raintoource Current ( ) V, raintoource Voltage ( V ) V, raintoource Voltage ( V ) V G, Gatetoource Voltage ( V ) T J, Junction Temperature ( C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature

4 C, Capacitance ( pf ) V G, Gatetoource Voltage ( V ) 12 V, raintoource Voltage ( V ) Q G, Total Gate Charge ( nc ) Fig 5. Typical Capacitance Vs. raintoource Voltage Fig 6. Typical Gate Charge Vs. Gatetoource Voltage I, Reverse rain Current ( ) V, ourcetorain Voltage ( V ) I I, rain Current () OPERTION IN THI RE LIMITE BY R (on) 1ms 10ms T = 25 C TJ = 150 C ingle Pulse V, raintoource Voltage (V) Fig 7. Typical ourcerain iode Forward Voltage Fig 8. Maximum afe Operating rea

5 6.0 V R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. mbient Temperature R G V G 10V Pulse Width 1 µs uty Factor 0.1 %.U.T. Fig 10a. witching Time Test Circuit V G t d(on) t r t d(off) t f 10% 90% V Fig 10b. witching Time Waveforms V 100 Thermal Response (Z thj ) 10 1 = INGLE PULE t2 (THERML REPONE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thj T t 1, Rectangular Pulse uration (sec) PM t1 Fig 11. Maximum Effective Transient Thermal Impedance, Junctiontombient

6 Current Regulator ame Type as.u.t. 10V Q G 12V.2µF 50KΩ.3µF Q G Q G.U.T. V V G V G 3m Charge I G I Current ampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T* ƒ Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer V G R G dv/dt controlled by R G I controlled by uty Factor "".U.T. evice Under Test V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V G =10V] ***.U.T. I Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I *** V G = 5.0V for Logic Level and 3V rive evices Fig 13. For PChannel HEXFET

8 O8 Package Outline imensions are shown in milimeters (inches) E 6 6X e B H 0.25 [.010] INCHE IM MIN MX b MILLIMETER MIN MX c E e.050 BIC 1.27 BIC e1.025 BIC BIC H K L y e1 C y K x 45 8X b [.010] C B 0.10 [.004] 8X L 7 8X c NOT E : 1. IMENIONING & TOLERNCING PER ME Y14.5M CONTROLLING IMEN ION: MILLIMETER 3. IMENION RE HOWN IN MILLIMETER [INCHE ]. 4. OUTLINE CONFORM TO JEEC OUTLINE M IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.15 [.006]. 6 IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.25 [.010]. 7 IMENION I THE LENGTH OF LE FOR OLERING TO UB TRTE [.255] 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] O8 Part Marking Information (LeadFree) EXMPLE: THI I N IRF7101 (MOFET) INTERNTIONL RECTIFIER LOGO XXXX F7101 TE COE (YWW) P = E IGNTE LEFREE PROUCT (OPTIONL) Y = LT IGIT OF T HE YER WW = WEE K = EMB LY ITE COE LOT COE PRT NUMBER

9 O8 Tape and Reel imensions are shown in milimeters (inches) TERMINL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTE: 1. CONTROLLING IMENION : MILLIMETER. 2. LL IMENION RE HOWN IN MILLIMETER(INCHE). 3. OUTLINE CONFORM TO EI481 & EI (12.992) MX. NOTE : 1. CONTROLLING IMENION : MILLIMETER. 2. OUTLINE CONFORM TO EI481 & EI (.566 ) (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications tandards can be found on IR s Web site. IR WORL HEQURTER: 233 Kansas t., El egundo, California 90245, U Tel: (310) TC Fax: (310) Visit us at for sales contact information.10/04

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from