MOSFET IRF7855 (KRF7855)
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- Sydney Elliott
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1 M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) G ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating Unit rain-ource Voltage Gate-ource Voltage Continuous rain Current Pulsed rain Current V VG ±2 T=25 2 T=7 8.7 IM 97 Power issipation T=25 P 2.5 W Linear erating Factor valanche Current ingle Pulse valanche Energy Peak iode Recovery dv/dt Thermal Resistance.Junction- to-mbient Thermal Resistance.Junction- to-case I.2 W/ I 7.2 E 54 mj dv/dt 9.9 V/ns RthJ 5 RthJC 2 Junction Temperature TJ 5 torage Temperature Range Tstg -55 to 5 V /W
2 M Type Electrical Characteristics Ta = 25 Parameter ymbol Test Conditions Min Typ Max Unit rain-ource Breakdown Voltage V I=25μ, VG=V V Zero Gate Voltage rain Current I V=V, VG=V 2 V=V, VG=V, TJ=25 25 μ Gate-Body Leakage Current IG V=V, VG=±2V ± n Gate Threshold Voltage VG(th) V=VG, I=μ V tatic rain-ource On-Resistance R(On) VG=V, I= mω Forward Transconductance gf V=25V, I=7.2 4 Input Capacitance Ciss 5 Output Capacitance Coss VG=V, V=25V, f=mhz 44 Reverse Transfer Capacitance Crss 2 pf Output Capacitance Coss VG = V, V = V, ƒ =.MHz 9 Output Capacitance Coss VG = V, V = 48V, ƒ =.MHz 32 Effective Output Capacitance Coss eff VG = V, V = to 48V 52 Total Gate Charge Qg 2 39 Gate ource Charge Qgs VG=V, V=3V, I=7.2.8 nc Gate rain Charge Qgd 9. Turn-On elaytime td(on) 8.7 Turn-On Rise Time tr 3 VG=V, V=3V, I=7.2,RG=.2Ω Turn-Off elaytime td(off) ns Turn-Off Fall Time tf 2 Body iode Reverse Recovery Time trr I= 7.2, VG=, di/dt= /μs,tj = Body iode Reverse Recovery Charge Qrr IF= 7.2, V=25V, di/dt= /μs,tj = nc Maximum Body-iode Continuous Current I symbol 2.3 showing the integral reverse G Pulsed ource Current IM p-n junction diode. 97 iode Forward Voltage V I= 7.2, VG=, TJ = V 2
3 I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () M Type VG TOP 5V V 8.V 7.V.V 5.5V 5.V BOTTOM 4.5V VG TOP 5V V 8.V 7.V.V 5.5V 5.V BOTTOM 4.5V. 4.5V µs PULE WITH Tj = 25 C.. V, rain-to-ource Voltage (V) 4.5V µs PULE WITH Tj = 5 C.. V, rain-to-ource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I = 2 V G = V T J = 5 C.5.. V = 5V µs PULE WITH V G, Gate-to-ource Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3
4 I, rain-to-ource Current () C, Capacitance (pf) V G, Gate-to-ource Voltage (V) M Type V G = V, f = MHZ C iss = C gs + C gd, C ds HORTE C rss = C gd C oss = C ds + C gd C iss I = 7.2 V = 48V V = 3V V = 2V C oss. 4. C rss V, rain-to-ource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-ource Voltage Fig. Typical Gate Charge vs. Gate-to-ource Voltage I, Reverse rain Current () T J = 5 C V G = V.. T = 25 C Tj = 5 C ingle Pulse OPERTION IN THI RE LIMITE BY R (on) µsec msec msec V, ource-to-rain Voltage (V) V, rain-to-ource Voltage (V) Fig 7. Typical ource-rain iode Forward Voltage Fig 8. Maximum afe Operating rea 4
5 I, rain Current () M Type T, mbient Temperature ( C) Fig 9. Maximum rain Current vs. mbient Temperature Fig a. witching Time Test Circuit V 9%. % % V G t d(on) t r t d(off) t f Fig b. witching Time Waveforms Thermal Response ( Z thj ).. = τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R R 2 R 3 R R 2 R 3 τ τ Ri ( C/W) τi (sec) INGLE PULE ( THERML REPONE ). E- E t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 E, ingle Pulse valanche Energy (mj) M Type R (on), rain-to -ource On Resistance ( mω) R (on), rain-to -ource On Resistance (m Ω) 3 I = Vgs = V I, rain Current () V G, Gate -to -ource Voltage (V) Fig 2. On-Resistance vs. rain Current Fig 3. On-Resistance vs. Gate Voltage Q G K UT L VCC V G Q G Q G 24 I Charge Fig 4a&b. Basic Gate Charge Test Circuit and Waveform 2 2 TOP.4.58 BOTTOM 7.2 5V 8 tp V (BR) V L RIVER 4 I R G 2V tp.u.t I. + - V tarting T J, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit and Waveforms Fig 5c. Maximum valanche Energy vs. rain Current
V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More information30V GS = 10V 6.2nC
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More informationMaximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
More informationSi4410DYPbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω
N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive Lead-Free escription This N-channe HEXFET Power MOSFET is produced using Internationa Rectifier's advanced HEXFET power MOSFET
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Power MOFET IRFP3N50L, ihfp3n50l PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = V 0.5 Q g (Max.) (nc) 2 Q gs (nc) 58 Q gd (nc) 0 Configuration ingle D TO-27C FETURE uper Fast Body Diode Eliminates the Need
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SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
More informationApplications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V
FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
More informationSPB07N60C3. Cool MOS Power Transistor V T jmax 650 V. Operating and storage temperature T j, T stg C 6) Feature
SPB7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current
More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
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3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS
More informationSymbol Parameter Max. 100 P = 25 C Power Dissipation V GS Gate-to-Source Voltage ± 12. V/ns T J C T STG
Low On-Resistance Low Gate Charge N-Channe MOSFET Idea for mobie processor C-C converters Surface Mount 00% R G Tested escription This advanced technoogy HEXFET Power MOSFET achieves an unprecedented baance
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FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
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AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery
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IRF953, RF1953M 12A, 1V,.3 Ohm, P-Channel Power MOFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed
More informationProduct Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J
P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise
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V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
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Silicon Carbide Enhancement Mode MOSFET Features V SS = 12V Preliminary SOT227 S R S(ON) < 34 GS Fully valanche Rated Pb Free & RoHS Compliant S G Isolation Type Package Electrically Isolation base plate
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide
More informationMaximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
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OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
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SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
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