STM4886E. N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 amhop Microelectronics Corp. Green Product N-Channel Enhancement Mode Field Effect Traistor TME Ver. PROUCT UMMRY V I R(ON) (mω) VG=V VG=.V FETURE uper high dee cell design for low R(ON). Rugged and reliable. uface Mount Package. E Protected. G 3 O- BOLUTE MXIMUM RTING (T = C unless otherwise noted) ymbol V V G P Parameter rain-ource Voltage Gate-ource Voltage I rain Current-Continuous a T = C. T = C. I M -Pulsed b 9 E ingle Pulse valanche Energy d 9 mj T J, T TG Maximum Power issipation a Operating Junction and torage Temperature Range Limit T = C. W T = C. W 3 ± - to Units V V C THERML CHRCTERITIC a R J Thermal Resistance, Junction-to-mbient C/W etails are subject to change without notice. Jun,,

2 Ver. ELECTRICL CHRCTERITIC (T= C unless otherwise noted) ymbol Parameter Conditio Min Typ Max Units OFF CHRCTERITIC BV rain-ource Breakdown Voltage VG=V, I=u 3 V I Zero Gate Voltage rain Current V=V, VG=V u IG Gate-Body Leakage Current VG= ±V, V=V ± u ON CHRCTERITIC VG(th) Gate Threshold Voltage V=VG, I=u. 3 V R(ON) rain-ource On-tate Resistance VG=V, I=. m ohm VG=.V, I=... m ohm g F Forward Traconductance V=V, I=. YNMIC CHRCTERITIC c CI Input Capacitance 3 pf V=V,VG=V CO Output Capacitance pf f=.mhz CR Reverse Trafer Capacitance pf WITCHING CHRCTERITIC t(on) Turn-On elay Time tr Rise Time t(off) Turn-Off elay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-ource Charge Gate-rain Charge c V=V I= VG=V RGEN= ohm V=V,I=.,VG=V V=V,I=., VG=V V=V,I=.,VG=.V 3 9 RIN-OURCE IOE CHRCTERITIC N MXIMUM RTING I Maximum Continuous rain-ource iode Forward Current V Notes iode Forward Voltage a.urface Mounted on FR Board,t < _ sec. b.pulse Test:Pulse Width < _ 3us, uty Cycle < _ %. c.guaranteed by design, not subject to production testing. d.tarting Tj= O C,L=.mH,V=V,VG=V.(ee Figure3) VG=V,I=.9. V Jan,,

3 Ver. 3 I, rain Current() VG = V VG = 3.V VG = 3V I, rain Current() Tj= C C - C V, rain-to-ource Voltage(V) Figure. Output Characteristics VG, Gate-to-ource Voltage(V) Figure. Trafer Characteristics. R(on)(m Ω) 3 V G =.V V G =V R(on), On-Resistance Normalized V G =V I=. V G =.V I=.. 3 Tj( C ) I, rain Current() Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. rain Current and Gate Voltage Figure. On-Resistance Variation with rain Current and Temperature Vth, Normalized Gate-ource Threshold Voltage V =V G I=u. - - Tj, Junction Temperature( C ) Figure. Gate Threshold Variation with Temperature 3 BV, Normalized rain-ource Breakdown Voltage I=u - Tj, Junction Temperature( C ) Figure. Breakdown Voltage Variation with Temperature Jun,,

4 Ver. R(on)(m Ω) C C I=. C Is, ource-drain current()... C C C VG, Gate-to-ource Voltage(V) Figure. On-Resistance vs. Gate-ource Voltage V, Body iode Forward Voltage(V) Figure. Body iode Forward Voltage Variation with ource Current C, Capacitance(pF) 3 C oss C rss C iss 3 VG, Gate to ource Voltage(V) V =V I= V, rain-to-ource Voltage(V) Figure 9. Capacitance Qg, Total Gate Charge() Figure. Gate Charge witching Time() T(off ) V=V,I= VG=V Tr T(on) Tf I, rain Current(). R (ON) Limit VG=V ingle Pulse T= C C. s ms ms us Rg, Gate Resistance(Ω) Figure. switching characteristics V, rain-ource Voltage(V) Figure. Maximum afe Operating rea Jun,,

5 Ver. V tp V(BR ) V L R IVE R R G V tp.u.t I. + - V Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 3a. Figure 3b. I. Normalized Traient Thermal Resistance ingle Pulse P M t t. R thj (t)=r (t) *RthJ. R thj= ee atasheet 3. T JM-T =PM* RthJ (t). uty Cycle, =t/t quare Wave Pulse uration(sec) Figure. Normalized Thermal Traient Impedance Curve Jun,,

6 Ver. PCKGE OUTLINE IMENION O- L E.X e C. TYP. B. TYP.. TYP. H Y MB OL E H L MILLIME T E R MIN MX MIN INC HE MX Jun,,

7 Ver. O- Carrier Tape O- Tape and Reel ata P P B E E E P T TERMINL NUMBER ECTION - unit: PCKGE OP N K FEEING IRECTION B K E E E P P P T (MIN) O- Reel W G V M N K R H UNIT: TPE IZE REEL IZE W M N W W H K G R V Jun,,