STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S

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1 T341 P - hannel E nhancement Mode MO FE T P R ODU T UMMR Y V D ID -3V -3 F E T UR E ( m W ) Max R D (ON) V = -1V V = -4.V uper high dee cell design for low R D (ON ). R ugged and reliable. OT-23 P ackage. D OT-23 D B OLUTE MXIMUM R TIN (T =2 unless otherwise noted) P arameter ymbol Limit Unit Drain- ource Voltage V D - 3 V ate- ource Voltage V 2 V Drain urrent- ontinuous T J =12 b -P ulsed ID -3 IDM - 1 Drain- ource Diode Forward urrent a I -1.2 Maximum P ower Dissipation a PD 1.2 W Operating Junction and torage Temperature R ange T J, T T - to 1 R J 1 /W THE R ML HR TE R I TI Thermal R esistance, Junction-to-mbient a Tel: Fax: czx@yongyutai.com 1

2 2 T341 E LE TR IL HR TE R I TI (T 2 unless otherwise noted) = Parameter ymbol ondition Min Typ Max Unit OF F HR T E R I T I Drain- ource Breakdown Voltage BV D V = V, ID = -2u -3 V Zero ate Voltage Drain urrent ID VD = -24V, V = V -1 u ate-body Leakage I V = 2V, VD = V 1 n ON HR T E R I T I b ate Threshold Voltage V (th) VD = V, ID = -2u V V = -1V, ID = -3 7 m-ohm Drain- ource On- tate R esistance R D (ON) V = -4.V, ID = -2 1 m-ohm On- tate Drain urrent ID(ON) V D = -V, V = -1V 6 Forward Traconductance gf V D = -V, ID = - 3 DY NMI HR T E R I T I c Input apacitance Output apacitance R everse Trafer apacitance WIT HIN HR T E R I T I c Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total ate harge ate- ource harge ate-drain harge I O R td(on) tr td(of F ) tf Q g Q gs Q gd VD =-1V, V = V f =1.MHZ V D = -1V, ID = -1, V E N = - 1V, R E N = 6 ohm R L = 1 ohm VD =-1V,ID =-3,V =-1V V D =-1V,ID =-3,V =-4.V VD =-1V, ID = -3, V =-1V PF PF PF

3 T341 E LE TR IL HR TE R I TI (T =2 unless otherwise noted) Parameter ymbol ondition Min Typ Max Unit DR IN- O UR E DIO DE HR T E R I T I Diode Forward Voltage V D V = V, Is = V Notes a. urface Mounted on F R 4 B oard, t 1sec. b.pulse Test:Pulse Width 3us, Duty ycle 2%. c. uaranteed by design, not subject to production testing. -I D, Drain urrent(), apacitance (pf ) V =V -V =1,9,8,7,6V -V =4V -V =3V VD, Drain-to- ource Voltage (V ) F igure 1. Output haracteristics 2 oss rss V D, Drain-to ource Voltage (V ) F igure 3. apacitance iss b On-R esistance(ohms) -ID, Drain urrent () R D (ON), V, ate-to- ource Voltage (V ) F igure 2. Trafer haracteristics V =-1V ID=-3 Tj= T j( ) F igure 4. On-R esistance Variation with Temperature 3

4 4 T341 V th, Normalized ate- ource T hreshold V oltage V D =V ID=-2u B V D, Normalized Drain- ource B reakdown V oltage 1.1 ID=-2u T j, J unction T emperature ( ) T j, J unction T emperature ( ) with T emperature F igure 6. B reakdown V oltage V ariati with T emperature 12 2 gf, T raconductance ( ) V D =-V Is, ource-drain current () 1 2 T J= ID, Drain- ource urrent () F igure 7. T raconductance V ariation with Drain urrent -V D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V olta V ariation with ource urren -V, ate to ource V oltage (V ) V D =-1V ID= ID, Drain urrent () R D(ON) Limit 1ms 1ms.1 V =-1V ingle P ulse T c= D 1s Qg, T otal ate harge ( ) F igure 9. ate harge -V D, Drain- ource V oltage (V ) F igure 1. Maximum afe O eratin rea

5 T341 V DD V R E N V IN D R L V OUT td(on) V OUT ton toff tr td(off) 9% 9% 1% INV E R T E D 1% tf VIN 1% 9% % % PUL E WIDTH F igure 11. witching T est ircuit F igure 12. witching Waveforms 1 Normalized Traient Thermal Resistance R thj (t)=r (t) * R thj 2. R thj = ee Datasheet.1 3. TJ M-T = P DM* R thj (t) ingle Pulse 4. Duty ycle, D=t1/t quare Wave Pulse Duration(sec) Normalized Thermal Traient Impedance urve P DM t1 t2

6 T341 L F M J B I H E D (TYP.) F I J L M 6

7 T341 OT-23 Tape and Reel Data OT-23 arrier Tape UNIT: PKE OT-23 B K D D1 E E1 E2 P P1 P2 T OT-23 Reel UNIT: TPE IZE REEL IZE M N W W1 H K R V