KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

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1 SINUTR TNI T N NN S I T TRNSISTR eneral escription 80N08P It s mainly suitable for low voltage applications such as automotive, / converters and a load switch in battery powered applications TURS V SS = 75V, I = 80 rain-source N Resistance : R S(N) =0m S = 0V XIU RTIN (Tc=25 ) RTRISTI SY 80N08P RTIN 80N08 rain-source Voltage V SS 75 V UNIT I N N 2 3 P. T 2. RIN 3. SUR I I N P IITRS 9.9 +_ X.3+0./ _ _ _ / _ _ _ _ _ _ _ 0.2 ate-source Voltage V SS 20 V rain urrent Single Pulsed valanche nergy (Note 2) Repetitive valanche nergy (Note ) Peak iode Recovery dv/dt (Note 3) rain Power =25 I 80 = Pulsed (Note) I P * : rain current limited by maximum junction temperature. S 200 m R 8 m dv/dt 4.5 V/ns Tc=25 P W erate above W/ aximum unction Temperature T j 75 Storage Temperature Range T stg Thermal haracteristics Thermal Resistance, unction-to-ase R th /W Thermal Resistance, unction-to-mbient R th /W N N 2 3 T N08 R. T 2. RIN 3. SUR I N R IITRS 0.6 +_ _ _ _ _ _ _ _ _ _ X.47 X _ _ _ _ 0.2 PIN NNTIN T-220IS () S /7

2 TRI RTRISTIS (Tc=25 ) RTRISTI SY TST NITIN IN. TYP. X. UNIT Static rain-source reakdown Voltage V SS I =250, V S =0V V reakdown Voltage Temperature oefficient V SS / T j I =250, Referenced to V/ rain ut-off urrent I SS V S =75V, V S =0V, ate Threshold Voltage V th V S =V S, I = V ate eakage urrent I SS V S = 20V, V S =0V n rain-source N Resistance R S(N) V S =0V, I = m ynamic Total ate harge g V S =60V, I =80 ate-source harge gs V S =0V (Note4,5) n ate-rain harge gd Turn-on elay time t d(on) V Turn-on Rise time t =37.5V r I =80 Turn-off elay time t d(off) R =25 (Note4,5) ns Turn-off all time t f Input apacitance iss utput apacitance oss VS=25V, VS=0V, f=.0z p Reverse Transfer apacitance rss Source-rain iode Ratings ontinuous Source urrent I S V S <V th Pulsed Source urrent I SP iode orward Voltage V S I S =80, V S =0V V Reverse Recovery Time t rr IS =80, V S =0V, ns Reverse Recovery harge rr dis/dt=00/ s Note ) Repetivity rating : Pulse width limited by junction temperature. Note 2) =38, I S =80, V =50V, R =25, Starting T j =25. Note 3) I S 7.0, di/dt 200/, V V SS, Starting T j =25. Note 4) Pulse Test : Pulse width 300, uty ycle 2%. Note 5) ssentially independent of operating temperature. arking 80N08 P N PRUT N 2 T N 2/7

3 ig. I - V S ig2. I - V S 000 V S =8V, 0V 000 V S = 5V rain urrent I () 00 0 V S =7V V S =6V V S =5V rain urrent I () rain - Source Voltage V S (V) ate - Source Voltage V S (V) ig3. V SS - Tj ig4. R S(N) - I Normalized reakdown Voltage V SS V S = 0V I S = n - Resistance R S(N) (mω) V S =0V unction Temperature Tj ( ) rain urrent I () ig5. I S - V S ig6. R S(N) - T 00.8 Reverse rain urrent I S () Normalized n Resistance V S =0V I = Source - rain Voltage V S (V) unction Temperature Tc ( ) 3/7

4 4/7

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6 ig4. ate harge VS I ast Recovery iode 0 V 0.8 V SS I.0 m V S gs gd g VS ig5. Single Pulsed valanche nergy S = I 2 2 S V SS V SS - V V SS I S 50V 25Ω V S I (t) 0 V VS V V S (t) ig6. Resistive oad Switching t p Time V S 90% R 0.5 V SS V 0% S 25 Ω V S t d(on) t r t d(off) t f 0V VS t on t off 6/7

7 ig7. Source - rain iode Reverse Recovery and dv /dt I UT VS I S (UT) ody iode orword urrent di/dt IR IS ody iode Reverse urrent 0.8 V SS driver VS (UT) V S ody iode Recovery dv/dt V 0V VS ody iode orword Voltage drop 7/7