KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description
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1 SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. TURS V SS =2V, I =9.5 rain-source Resistance : R S() S = 1V g(typ.)=18.5n I P 1. T 2. RI 3. SUR I I P IITRS 9.9 +_ X / _ _ _ / _ _ _ _ _ _ _.2 XIU RTI (Tc=25 ) RTRISTI SY RTI 952P rain-source Voltage V SS 2 V ate-source Voltage V SS 3 V rain urrent Single Pulsed valanche nergy (ote 2) Repetitive valanche nergy (ote 1) Peak iode Recovery dv/dt (ote 3) rain Power =25 I * Pulsed (ote1) I P 38 38* UIT S 18 m R 8.7 m dv/dt 5.5 V/ns Tc=25 P 87 4 W erate above W/ aximum unction Temperature T j 15 Storage Temperature Range T stg Thermal haracteristics Thermal Resistance, unction-to-ase R th /W Thermal Resistance, unction-to- mbient PI TI R th /W S T-22 R 1. T 2. RI 3. SUR T-22IS (1) P R 1. T 2. RI 3. SUR I R IITRS _ _ _.2.8 +_ _ _ _.2.5 +_ X _ X 1.47 X _ _ _ _.2 I IITRS 1. +_ _ _ /-.5 Φ3.2 +_ _ _ / _ _ / / _.1 P 6.8 +_ _.2 R 2.6 +_.2 S.5 Typ S T-22IS 1/7
2 952P1/1/2 TRI RTRISTIS (Tc=25 ) RTRISTI SY TST ITI I. TYP. X. UIT Static rain-source reakdown Voltage V SS I =25, V S =V V reakdown Voltage Temperature oefficient V SS / T j I =25, Referenced to V/ ate Threshold Voltage V th V S =V S, I = V rain ut-off urrent I SS V S =2V, V S =V, ate eakage urrent I SS V S = 3V, V S =V n rain-source Resistance R S() V S =1V, I = m orward Transconductance g S V S =4V, I =4.75 (ote4) S ynamic Total ate harge g V S =16V, I =9.5 ate-source harge gs V S =1V (ote4, 5) n ate-rain harge gd Turn-on elay time t d(on) Turn-on Rise time t r V =1V, R = Turn-off elay time t d(off) I =9.5 (ote4, 5) ns Turn-off all time t f Input apacitance iss utput apacitance oss VS=25V, VS=V, f=1.z p Reverse Transfer apacitance rss Source-rain iode Ratings ontinuous Source urrent I S V S <V th Pulsed Source urrent I SP iode orward Voltage V S I S =9.5, V S =V V Reverse Recovery Time t rr IS =9.5, V S =V, ns Reverse Recovery harge rr dis/dt=1/ s (ote 4) ote 1) Repetivity rating : Pulse width limited by junction temperature. ote 2) =3m, I S =9.5, V =5V, R =25, Starting T j =25. ote 3) I S 9.5, di/dt 3/, V V SS, Starting T j =25. ote 4) Pulse Test : Pulse width 3, uty ycle 2%. ote 5) ssentially independent of operating temperature. 2/7
3 952P1/1/2 ig1. I - V S ig2. I - V S rain urrent I () V S TP : 15. V 1. V 8. V 7. V 6.5 V 6. V 5.5 V ottom : 5. V rain urrent I () V S = 4V 25µs Pulse Test rain - Source Voltage V S (V) ate - Source Voltage V S (V) ig4. V SS - T j ig5. R S() - I ormalized reakdown Voltage V SS V S = V I S = 25µ n - Resistance R S() (Ω) V S = 1V.5 V S = 2V unction Temperature T j ( ) rain urrent I () ig6. I S - V S ig6. R S() - T j Reverse rain urrent I S () ormalized n Resistance V S = 1V I S = Source - rain Voltage V S (V) unction Temperature T j ( ) 3/7
4 952P1/1/2 ig7. - V S ig8. g - V S 25 requency =1z 12 I = 9.5 apacitance (p) 2 iss 15 1 oss rss 5 ate - Source Voltage V S (V) V S = 5V V S = 125V V S = 2V rain - Source Voltage V S (V) ate - harge g (n) ig9. Safe peration rea ig1. Safe peration rea (952P1) (9521, 9522) 1 2 peration in this area is limited by R S() 1 2 peration in this area is limited by R S() rain urrent I () T = 25 T j = 15 Single nonrepetitive pulse 1 2 1µs 1ms 1ms 1ms rain urrent I () T = 25 T j = 15 Single nonrepetitive pulse µs 1 ms 1 ms 1 ms rain - Source Voltage V S (V) rain - Source Voltage V S (V) ig11. I - T j 12 1 rain urrent I () unction Temperature Tj ( ) 4/7
5 952P1/1/2 ig12. Transient Thermal Response urve ormalized Transient Thermal Resistance uty= Single Pulse - uty actor, = t 1 /t P t 1 t 2 TI (sec) ig13. Transient Thermal Response urve ormalized Transient Thermal Resistance 1-2 uty= Single Pulse P t 1 t 2 - uty actor, = t 1 /t 2 TI (sec) 5/7
6 952P1/1/2 ig14. ate harge VS I ast Recovery iode 1 V.8 V SS 1. m I VS V S gs gd g ig15. Single Pulsed valanche nergy 1 S = I 2 2 S V SS V SS - V V SS I S.5 V SS 25Ω I (t) V S 1 V VS V V S (t) t p Time 6/7
7 952P1/1/2 ig16. Resistive oad Switching R V S 9%.5 V SS 25 Ω V S V 1% S t f 1V VS t d(on) t r t d(off) t on t off ig17. Source - rain iode Reverse Recovery and dv /dt ody iode orword urrent UT VS I S (UT) di/dt I IR.8 x V SS IS ody iode Reverse urrent driver VS (UT) ody iode Recovery dv/dt V S 1V VS V ody iode orword Voltage drop 7/7
KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description
SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
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Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
N-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
AOT404 N-Channel Enhancement Mode Field Effect Transistor
AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
SMPS MOSFET. V DSS R DS(on) max I D
P- 95276 SMPS MOSFET IRF7470PbF ppications High Frequency C-C Converters with Synchronous Rectification Lead-Free HEXFET Power MOSFET V SS R S(on) max I 40V 3mΩ Benefits Utra-Low Gate Impedance Very Low
P-TO Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current
SPP7N6C3 SPI7N6C3, SP7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge I D 7.3 Periodic avalanche rated PGTOFP PGTO6
V DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead 20 C/W Junction-to-Ambient 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET
IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3
Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 V SS I 25 R S(on) = 3V = 5A 8.3m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum
Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated
AON4605 Complementary Enhancement Mode Field Effect Transistor
AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form
TrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω
P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
March 996 NS8947 ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60
AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness
PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1
l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
P-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
AOD444/AOI444 60V N-Channel MOSFET
AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,
IRF5800. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.085Ω
P - 93850 IRF5800 HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Low Gate Charge G 2 6 5 3 4 S V SS = -30V R S(on) = 0.085Ω escription These P-channe MOSFETs
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units
l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from
Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary
IXFK240N25X3 IXFX240N25X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK24N25X3 IXFX24N25X3 V SS I 25 R S(on) = 25V = 24A 5.m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-264 (IXFK)
P-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW5N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
IGBT Designer s Manual
IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous
N-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
IXFN140N30P. Polar TM Power MOSFET HiPerFET TM = 300V = 110A V DSS I D ns. t rr. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Polar TM Power MOSFET HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S I D25 R DS(on) t rr = 3V = 11A 24mΩ ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V