SMPS MOSFET. V DSS R DS(on) max I D

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SMPS MOSFET P-944B IF8PbF EXFET Power MOSFET Appications igh frequency C-C converters SS Son max I W 6A Benefits Low Gate to rain Charge to educe Switching Losses Fuy Characterized Capacitance

Continuous rain Current, GS @ 6 I @ T A = C Continuous rain Current, GS @ 48 A I M Pused rain Current 48 P @T A = C Power issipation W Linear erating Factor 6 W C GS Gate-to-Source otage ± dvdt Peak

1 SMPS MOSFET P-944B IF8PbF EXFET Power MOSFET Appications igh frequency C-C converters SS Son max I W 6A Benefits Low Gate to rain Charge to educe Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify esign, See App Note AN Fuy Characterized Avaanche otage and Current Lead-Free aogen-free * 6 TSOP-6 Absoute Maximum atings Parameter Max Units T A = C Continuous rain Current, 6 T A = C Continuous rain Current, 48 A I M Pused rain Current 48 A = C Power issipation W Linear erating Factor 6 W C GS Gate-to-Source otage ± dvdt Peak iode ecovery dvdt 96 ns T J Operating Junction and - to + T STG Storage Temperature ange Sodering Temperature, for seconds 6mm from case C Therma esistance Symbo Parameter Typ Max Units θja Junction-to-Ambient 6 CW Notes through are on page 8 wwwirfcom 4

2 IF8PbF T J = C uness otherwise specified Parameter Min Typ Max Units Conditions BSS rain-to-source Breakdown otage GS =, I = µa BSS T J Breakdown otage Temp Coefficient 6 C eference to C, I = ma ƒ Son Static rain-to-source On-esistance Ω GS =, I = 6A ƒ GSth Gate Threshod otage S = GS, I = µa I SS rain-to-source Leakage Current µa S =, GS = S = 6, GS =, T J = C I GSS Gate-to-Source Forward Leakage GS = na Gate-to-Source everse Leakage - GS = - T J = C uness otherwise specified Parameter Min Typ Max Units Conditions g fs Forward Transconductance 44 S S =, I = 6A Q g Tota Gate Charge 9 I = 6A Q gs Gate-to-Source Charge 8 nc S = 6 Q gd Gate-to-rain "Mier" Charge GS = t don Turn-On eay Time 6 = t r ise Time 8 ns I = 6A t doff Turn-Off eay Time 88 G = Ω t f Fa Time 9 GS = ƒ C iss Input Capacitance 88 GS = C oss Output Capacitance 8 S = C rss everse Transfer Capacitance 6 pf ƒ = Mz C oss Output Capacitance GS =, S =, ƒ = Mz C oss Output Capacitance 84 GS =, S = 6, ƒ = Mz C oss eff Effective Output Capacitance 6 GS =, S = to 6 Avaanche Characteristics Parameter Typ Max Units E AS Singe Puse Avaanche Energy 99 mj I A Avaanche Current 6 A iode Characteristics Parameter Min Typ Max Units Conditions I S Continuous Source Current MOSFET symbo 8 Body iode showing the A G I SM Pused Source Current integra reverse 48 Body iode p-n junction diode S S iode Forward otage T J = C, I S = 6A, GS = ƒ t rr everse ecovery Time 4 ns T J = C, I F = 6A Q rr everse ecoverycharge 4 nc didt = Aµs ƒ wwwirfcom

3 I, rain-to-source Current A I, rain-to-source Current A IF8PbF GS TOP 8 6 BOTTOM 6 GS TOP 8 6 BOTTOM µs PULSE WIT Tj = C S, rain-to-source otage µs PULSE WIT Tj = C S, rain-to-source otage Fig Typica Output Characteristics Fig Typica Output Characteristics I, rain-to-source Current A T J = C T J = C S= µs PULSE WIT GS, Gate-to-Source otage Son, rain-to-source On esistance Normaized I = 6A GS= T J, Junction Temperature C Fig Typica Transfer Characteristics Fig 4 Normaized On-esistance s Temperature wwwirfcom

4 C, CapacitancepF IF8PbF GS =, f = M C iss = C gs + C gd, C ds SOTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss GS, Gate-to-Source otage I = 6A S= 6 S= S= 4 S, rain-to-source otage 4 Q G, Tota Gate Charge nc Fig Typica Capacitance s rain-to-source otage Fig 6 Typica Gate Charge s Gate-to-Source otage I S, everse rain Current A T J = C T J = C GS= S,Source-to-rain otage I, rain Current A OPEATION IN TIS AEA LIMITE BY Son us us ms ms TC = C TJ = C Singe Puse S, rain-to-source otage Fig Typica Source-rain iode Forward otage Fig 8 Maximum Safe Operating Area 4 wwwirfcom

5 IF8PbF 6 S I, rain Current A 4 G GS Puse Width µs uty Factor UT Fig a Switching Time Test Circuit + - T C, Case Temperature C Fig 9 Maximum rain Current s Case Temperature S 9 GS t don t r t doff t f Fig b Switching Time Waveforms Therma esponse thjc = SINGLE PULSE TEMAL ESPONSE Notes uty factor =t t Peak T J=P Mx thjc + TC t, ectanguar Puse uration sec PM t t Fig Maximum Effective Transient Therma Impedance, Junction-to-Ambient wwwirfcom

6 S on, rain-to-source On esistance Son, rain-to -Source On esistance Ω IF8PbF Ω GS = I = 6A 4 I, rain Current A GS, Gate -to -Source otage Fig On-esistance s rain Current Fig On-esistance s Gate otage I AS GS Current eguator Same Type as UT µf KΩ ma µf UT I G I Current Samping esistors + - S GS Fig 4ab Basic Gate Charge Test Circuit and Waveform tp BSS G S G tp Q GS L UT I AS Ω Q G Q G Charge IE + - A E AS, Singe Puse Avaanche Energy mj I TOP 4A A BOTTOM 9A Starting T, Junction Temperature J C Fig ab Uncamped Inductive Test circuit Fig c Maximum Avaanche Energy and Waveforms s rain Current 6 wwwirfcom

7 IF8PbF wwwirfcom TSOP-6 Package Outine TSOP-6 Part Marking Information, 6,*, 8, 8,, 6, 9,,,,, -, W * ; = + - ; = OLQ E Y WK UN N K Q K U LQ G LF W G U OLQ E O WK S UWQ X P E U K Q K U LQ G LF W X LU 8,,,,,,, Note For the most current drawing pease refer to I website at httpwwwirfcompackage

8 IF8PbF TSOP-6 Tape ee Information Notes epetitive rating; puse width imited by max junction temperature Starting T J = C, L = m G = Ω, I AS = 6A ƒ Puse width 4µs; duty cyce When mounted on inch square copper board, t sec C oss eff is a fixed capacitance that gives the same charging time as C oss whie S is rising from to 8 SS I S 6A, didt 9Aµs, BSS, T J C ata and specifications subject to change without notice This product has been designed and quaified for the Consumer market Quaification Standards can be found on I s Web site I WOL EAQUATES Kansas St, E Segundo, Caifornia 94, USA Te - TAC Fax -9 isit us at wwwirfcom for saes contact information4 8 wwwirfcom

SMPS MOSFET. V DSS R DS(on) max (mw) I D

SMPS MOSFET. V DSS R DS(on) max (mw) I D SMPS MOSFET P- 9628 Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q] Quaified Lead-Free escription Specificay