IRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance.

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1 PD dvanced Process Technoogy Utra Low On-Resistance Dua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature Lead-Free S G S2 G2 HEXFET Power MOSFET D D D2 D2 V DSS = -55V R DS(on) = 0.05Ω Top View Description These HEXFET Power MOSFET's in a Dua SO-8 package utiize the astest processing techniques to achieve extremey ow on-resistance per siicon area. dditiona features of these HEXFET Power MOSFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in a wide variety of appications. The efficient SO-8 package provides enhanced therma characteristics and dua MOSFET die capabiity making it idea in a variety of power appications. This dua, surface mount SO-8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. SO-8 bsoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage -55 V I T C = 25 C Continuous Drain Current, V 0V -3.4 I T C = 70 C Continuous Drain Current, V 0V -2.7 I DM Pused Drain Current -27 P C = 25 C Power Dissipation 2.0 P C = 70 C Power Dissipation.3 W Linear Derating Factor 0.06 W/ C V GS Gate-to-Source Votage ± 20 V V GSM Gate-to-Source Votage Singe Puse tp<0µs 30 V E S Singe Puse vaanche Energy 4 dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W 08/03/0

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage -55 V V GS = 0V, I D = -250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = -m V GS = -0V, I D = -3.4 R DS(on) Static Drain-to-Source On-Resistance Ω V GS = -4.5V, I D = -2.7 V GS(th) Gate Threshod Votage -.0 V V DS = V GS, I D = -250µ g fs Forward Transconductance 3.3 S V DS = -0V, I D = -3. I DSS Drain-to-Source Leakage Current -2.0 V DS = -55V, V GS = 0V µ -25 V DS = -55V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge I D = -3. Q gs Gate-to-Source Charge nc V DS = -44V Q gd Gate-to-Drain ("Mier") Charge V GS = -0V, See Fig. 0 t d(on) Turn-On Deay Time 4 22 V DD = -28V t r Rise Time 0 5 I D = -.0 ns t d(off) Turn-Off Deay Time R G = 6.0Ω t f Fa Time R D = 6Ω, C iss Input Capacitance 690 V GS = 0V C oss Output Capacitance 20 pf V DS = -25V C rss Reverse Transfer Capacitance 86 ƒ =.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo -2.0 (Body Diode) showing the I SM Pused Source Current integra reverse G -27 (Body Diode) p-n junction diode. V SD Diode Forward Votage -.2 V T J = 25 C, I S = -2.0, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = -2.0 Q rr Reverse RecoveryCharge nc di/dt = -00/µs ƒ D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 20mH R G = 25Ω, I S = (See Figure 8) ƒ I SD -3.4, di/dt -50/µs, V DD V (BR)DSS, T J 50 C Puse width 300µs; duty cyce 2%. When mounted on inch square copper board, t<0 sec 2

3 -I D, Drain-to-Source Current () 00 0 VGS TOP -5V -2V -0V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V -3.0V 20µs PULSE WIDTH 0. T J = 25 C V DS, Drain-to-Source Votage (V) -I D, Drain-to-Source Current () 00 0 VGS TOP -5V -2V -0V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V -3.0V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current () 0 T J = 25 C T J = 50 C -I SD, Reverse Drain Current () 0 T J = 50 C T J = 25 C V DS = -25V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) V GS = 0 V V SD,Source-to-Drain Votage (V) Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-Drain Diode Forward Votage 3

4 R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = V GS = -0V T J, Junction Temperature ( C) (Ω) R DS (on), Drain-to-Source On Resistance VGS = -4.5V VGS = -0V I D, Drain Current () Fig 5. Normaized On-Resistance Vs. Temperature Fig 6. Typica On-Resistance Vs. Drain Current RDS(on), Drain-to-Source On Resistance ( Ω ) I D = V GS, Gate-to-Source Votage (V) Fig 7. Typica On-Resistance Vs. Gate Votage E S, Singe Puse vaanche Energy (mj) I D TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 8. Maximum vaanche Energy Vs. Drain Current 4

5 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Votage (V) I D = -3. V DS =-48V V DS =-30V V DS =-2V V DS, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) Fig 9. Typica Capacitance Vs. Drain-to-Source Votage Fig 0. Typica Gate Charge Vs. Gate-to-Source Votage 00 Therma Response (Z thj ) 0 D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thj + T t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5

6 SO-8 Package Outine Dimensions are shown in miimeters (inches) E 6 6X e D B H 0.25 [.00] DIM INCHES MILLIMETERS MIN MX MIN MX b c D E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 SO-8 Part Marking 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. DIMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.00]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 DTE CODE (YWW) P = DESIGNT ES LED-FREE PRODUCT (OPTIONL) Y = LST DIGIT OF THE YER WW = WEEK = SSEMBLY SITE CODE LOT CODE PRT NUMBER Notes:. For an utomotive Quaified version of this part pease seehttp:// 2. For the most current drawing pease refer to IR website at 6

7 SO-8 Tape and Ree Dimensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) TC Fax: (30) Visit us at for saes contact information.08/

Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units

Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units P - 958 IRF734PbF Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = -20V R S(on) = 0.058Ω