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2 Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) Avaiabe in Tape and Ree Fast Switching Lead-Free Description These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. A thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCIA cards. The therma resistance and power dissipation are the best avaiabe. G S 2 IRLML2502PbF HEXFET Power MOSFET V DSS = 20V 3 D Micro3 PD A R DS(on) = 0.045Ω Absoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage 20 V I T A = 25 C Continuous Drain Current, V 4.5V 4.2 I T A = 70 C Continuous Drain Current, V 4.5V 3.4 A I DM Pused Drain Current 33 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 0 C/W /8/04

3 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 20 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.0 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 4.5V, I D = 4.2A Ω V GS = 2.5V, I D = 3.6A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 5.8 S V DS = V, I D = 4.0A I DSS Drain-to-Source Leakage Current.0 V DS = 6V, V GS = 0V µa 25 V DS = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I D = 4.0A Q gs Gate-to-Source Charge nc V DS = V Q gd Gate-to-Drain ("Mier") Charge V GS = 5.0V t d(on) Turn-On Deay Time 7.5 V DD = V t r Rise Time I D =.0A ns t d(off) Turn-Off Deay Time 54 R G = 6Ω t f Fa Time 26 R D = Ω C iss Input Capacitance 740 V GS = 0V C oss Output Capacitance 90 pf V DS = 5V C rss Reverse Transfer Capacitance 66 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo.3 (Body Diode) showing the A I SM Pused Source Current integra reverse G 33 (Body Diode) p-n junction diode. V SD Diode Forward Votage.2 V T J = 25 C, I S =.3A, V GS = 0V t rr Reverse Recovery Time 6 24 ns T J = 25 C, I F =.3A Q rr Reverse Recovery Charge nc di/dt = 0A/µs D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2

4 I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 50 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C V DS= 5V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 4.0A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

5 C, Capacitance (pf) 200 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED C = 00 rss Cgd Coss = Cds + Cgd 800 C iss C oss C rss 0 0 V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I = D 4.0A V DS = V Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I, Drain Current (A) D 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

6 4.0 I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 00 Therma Response (Z thja ) 0 D = PDM t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectanguar Puse Duration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

7 R DS(on), Drain-to -Source Votage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) IRLML2502PbF VGS = 2.5V Id = 4.0A VGS = 4.5V V GS, Gate -to -Source Votage ( V ) i D, Drain Current ( A ) Fig. On-Resistance Vs. Gate Votage Fig 2. On-Resistance Vs. Drain Current 6

8 Micro3 Package Outine Dimensions are shown in miimeters (inches) 3 E - A - D - B e e 3 LEAD ASSIGNMENTS - GATE 2 - SOURCE 3 - DRAIN H 0.20 (.008 ) M A M DIM INCHES MILLIMETERS MIN MAX MIN MAX A A B C D e.0750 BASIC.90 BASIC e.0375 BASIC 0.95 BASIC E H L C - B A 0. (.004) M C A S B S A (.003) θ L C θ MINIMUM RECOMMENDED FOOTPRINT 0.80 (.03 ) 0.90 (.035 ) 2.00 (.079 ) NOTES:. DIMENSIONING & TOLERANCING PER ANSI Y4.5M CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH (.037 ) 2X 7

9 Micro3 (SOT-23) Package Outine Dimensions are shown in miimeters (inches) 6 D E 2 B 5 e e ccc E C B A 4 S Y DIMENS IONS M B MILLIMETERS INCHES O L MIN MAX MIN MAX A A A b c D E E e 0.95 BSC.0375 BSC e.90 BSC.075 BSC L L 0.25 BSC.08 BSC aaa bbb ccc H A A2 L A b aaa C bbb C A B 3 SURF 7 L 0 RE COMME NDE D F OOT PRINT NOTES DIMENSIONING AND TOLERANCING PER ASME Y4.5M-994. [.038] 2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES. 3. CONTROLLING DIMENS ION: MILLIMET ER DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. [.79] 5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. 7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB [.03] [.0375].90 [.075] Micro3 (SOT-23/TO-236AB) Part Marking Information W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR PART NUMBER PART NUMBER CODE REFERENCE: A = IR LML 2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Y = YEAR W = WEE K LOT CODE YE AR X 25 Y 26 Z W = (27-52) IF PRECEDED BY A LETTER YE AR Y Y A B C D E F G H J K WORK WEEK 0 A 02 B 03 C 04 D WORK WEEK 27 A 28 B 29 C 30 D W W X Y Z 8

10 Micro3 Tape & Ree Information Dimensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. /04 9

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe