CEP300N10/CEB300N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications
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- Rodger McBride
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1 N-Channel Enhancement Mode Field Effect Traistor PRELIMINRY FETURE, 37, R (ON) = = uper high dee cell design for extremely low R (ON). High power and current handing capability. RoH compliant. TO-22 & TO-263 package. pplicatio Battery protection,up. CEB ERIE TO-263(-PK) CEP ERIE TO-22 BOLUTE MXIMUM RTIN T c = 25 C unless otherwise noted rain-ource oltage ate-ource oltage Parameter ymbol Limit Units rain Current-Continuous@ T C = 25 C rain Current-Pulsed T C = C Maximum Power T C = 25 C - erate above 25 C ingle Pulsed valanche Energy d ingle Pulsed valanche Current d I I M P ± E 72 I 6 27 Operating and tore Temperature Range T J,T stg -55 to 75 C W W/ C mj Thermal Characteristics Parameter ymbol Limit Units Thermal Resistance, Junction-to-Case RθJC.4 C/W Thermal Resistance, Junction-to-mbient RθJ 62.5 C/W This is preliminary information on a new product in development now. etails are subject to change without notice. Rev. 26.ec
2 Electrical Characteristics T c = 25 C unless otherwise noted Off Characteristics Parameter ymbol Test Condition Min Typ Max Units rain-ource Breakdown oltage Zero ate oltage rain Current ate Body Leakage Current, Forward ate Body Leakage Current, Reverse On Characteristics b ate Threshold oltage tatic rain-ource On-Resistance ynamic Characteristics c Input Capacitance Output Capacitance Reverse Trafer Capacitance witching Characteristics c B I I F IR Turn-On elay Time t d(on) Turn-On Rise Time t r Turn-Off elay Time t d(off) Turn-Off Fall Time t f Total ate Charge Q g ate-ource Charge Q gs ate-rain Charge Q gd rain-ource iode Characteristics and Maximun Ratings rain-ource iode Forward Current rain-ource iode Forward oltage b (th) R (on) Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature b.pulse Test : Pulse Width < 3µs, uty Cycle < 2%. c.uaranteed by design, not subject to production testing. d.l =.4mH, I = 6, = 5, R = 25Ω, tarting T J = 25 C C iss C oss C rss I =, I = 25µ =, = = 2, = = -2, = =, I = 25µ =, I = 2 = 5, =, f =. MHz = 5, I = 2, =, R EN = Ω = 5, I = 2, = =, I = µ n n mω 2
3 I, rain Current () =,8,6,5 =4 I, rain Current () T J =25 C 25 C -55 C , rain-to-ource oltage () Figure. Output Characteristics, ate-to-ource oltage () Figure 2. Trafer Characteristics C, Capacitance () C iss 25 C C oss rss R(ON), Normalized R(ON), On-Resistance(Ohms) I =2 = , rain-to-ource oltage () Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance ariation with Temperature TH, Normalized ate-ource Threshold oltage = I =25µ I, ource-drain current () = TJ, Junction Temperature( C), Body iode Forward oltage () Figure 5. ate Threshold ariation with Temperature Figure 6. Body iode Forward oltage ariation with ource Current 3
4 , ate to ource oltage () =5 I = I, rain Current () R (ON) Limit µs ms ms C T =25 C T J =75 C ingle Pulse Qg, Total ate Charge (), rain-ource oltage () B,Normalized rain-ource Breakdown oltage Figure 7. ate Charge Figure 8. Maximum afe Operating rea Tj, Junction Temperature ( C) Figure 9. Breakdown oltage ariation Temperature REN IN RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTE % tf IN % 9% 5% 5% PULE WITH Figure. witching Test Circuit Figure. witching Waveforms 4
5 r(t),normalized Effective Traient Thermal Impedance - = ingle Pulse PM t t2. R JC (t)=r (t) * R JC 2. R JC=ee atasheet 3. TJM-TC = P* R JC (t) 4. uty Cycle, =t/t quare Wave Pulse uration (msec) Figure 2. Normalized Thermal Traient Impedance Curve 2 5
CEP190N10/CEB190N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications
N-Channel Enhancement Mode Field Effect Traistor PRELIMINRY FETURE, 9, R (ON) = 3.7mΩ @ = uper high dee cell design for extremely low R (ON). High power and current handing capability. RoH compliant. TO-22
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