STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

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1 SamHop Microelectronics Corp. STM39 Green Product Oct.3, 26 Dual Enhancement Mode Field Effect Traistor ( N and P Channel) PRODUCT SUMMRY (N-Channel) PRODUCT SUMMRY (P-Channel) VDSS ID RDS(ON) ( mω ) Max VDSS ID RDS(ON) ( mω ) Max 3V 7 VGS = V VGS = 4.5V -3V -6 VGS = -V VGS = -4.5V D D D2 D SO S G S2 G2 BSOLUTE MXIMUM RTINGS (T=25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 3-3 V Gate-Source Voltage VGS 2 2 V a Drain C b -Pulsed ID IDM Drain-Source Diode Forward Current a IS Maximum Power Dissipation Operating Junction and Storage Temperature Range a PD 2. W TJ, TSTG -55 to 5 C THERML CHRCTERISTICS a Thermal Resistance, Junction-to-mbient 62.5 C /W R J

2 S T M39 N-C hannel E L E C TR IC L C HR C TE R IS TIC S (T = 25 C unles s otherwis e noted) 5 Parameter S ymbol Condition Min Typ Max Unit OF F C HR C T E R IS T IC S Drain-S ource Breakdown Voltage BV DS S V G S = V, ID = 25u 3 V Zero Gate Voltage Drain C urrent IDS S VDS 24V, VGS V = = Gate-Body Leakage IGS S VGS 2V, VDS V = = u ON C HR C T E R IS T IC S b Gate Threshold Voltage VGS (th) VDS = VGS, ID = 25u..9 3 V Drain-S ource On-S tate R esistance R DS (ON) V G S = V, ID = 7 V G S = 4.5V, ID = On-S tate Drain Current ID(ON) V DS = 5V, V G S = V 2 Forward Traconductance gf S V DS = V, ID =7 4 S DY NMIC C HR C T E R IS T IC S c Input C apacitance Output C apacitance R everse Trafer Capacitance S WIT C HING C HR C T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate C harge Gate-S ource Charge Gate-Drain C harge C IS S C OS S C R S S td(on) tr td(of F ) tf Q g Q gs Q gd VDS =5V, VG S = V f =.MHZ V DD = 5V, ID = 7, R L=2. ohm, V G S = V, R GE N = 6 ohm V DS =5V, ID =7,V G S =V V DS =5V, ID =7,V G S =4.5V VDS =5V, ID = 7, V G S =V C 23 u m ohm m ohm PF PF PF 2

3 S T M39 P-C hannel E L E C TR IC L C HR C TE R IS TIC S (T = 25 C unles s otherwis e noted) C Parameter S ymbol Condition Min Typ Max Unit OF F C HR C T E R IS T IC S Drain-S ource Breakdown Voltage BV DS S V G S = V, ID = -25u -3 V Zero Gate Voltage Drain C urrent IDS S VDS -24V, VGS V = = - Gate-Body Leakage IGS S VGS = 2V, VDS = V u ON C HR C T E R IS T IC S b Gate Threshold Voltage VGS (th) VDS = VGS, ID = -25u V Drain-S ource On-S tate R esistance R DS (ON) V G S = -V, ID= V G S = -4.5V, ID= On-S tate Drain Current ID(ON) V DS = -5V, V G S = -V -2 Forward Traconductance gf S V DS = -5V, ID = S DY NMIC C HR C T E R IS T IC S c Input C apacitance Output C apacitance R everse Trafer Capacitance S WIT C HING C HR C T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate C harge Gate-S ource Charge Gate-Drain C harge C IS S C OS S C R S S td(on) tr td(of F ) tf Q g Q gs Q gd VDS =-5V, VG S = V f =.MHZ V D = -5V, R L=5 ohm, ID = -, V G E N = -V, R G E N =6 ohm VDS =-5V,ID=-5,VGS =-V VDS =-5V,ID=-5,VGS =-4.5V 3 VDS =-5V, ID = - 5, V G S =-V u m ohm m ohm PF PF PF

4 S T M39 ELECTRICL CHRCTERISTICS (T=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRIN-SOURCE DIODE CHRCTERISTICS Diode Forward Voltage Notes VSD a.surface Mounted on FR4 Board, t sec. b.pulse Test:Pulse Width 3 s, Duty Cycle 2%. c.guaranteed by design, not subject to production testing. N-Channel b VGS = V, Is =.7 N-Ch..2 VGS = V, Is =-.7 P-Ch V C VGS=V VGS=5V VGS=4.5V VGS=4V 2 6 ID, Drain Current() 24 6 VGS=3.5V VGS=3V ID, Drain Current () 2 4 Tj=25 C -55 C 25 C VDS, Drain-to-Source Voltage (V) Figure. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Trafer Characteristics 6.5 R DS (on) (mω) V G S =4.5V V G S =V R DS (ON), On-R esistance Normalized V G S =V ID=7 V G S =4.5V ID= ID, Drain C urrent () F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage T j( C ) T j, J unction T emperature ( C ) F igure 4. On-R esistance Variation with Drain C urrent and Temperature 4

5 S T M39 6 V th, Normalized G ate-s ource T hres hold V oltage V DS =V G S ID=25u B V DS S, Normalized Drain-S ource B reakdown V oltage T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature ID=25u F igure 6. B reakdown V oltage V ariation with T emperature R DS (on) (mω) ID=7 75 C 25 C 25 C Is, S ource-drain current () C 25 C 75 C V G S, G ate-s ource Voltage (V ) F igure 7. On-R esistance vs. G ate-s ource V oltage VS D, Body Diode Forward Voltage (V ) F igure. B ody Diode F orward V oltage V ariation with S ource C urrent 5

6 S T M39 6 C, Capacitance (pf) 9 75 Ciss Coss 5 Crss V G S, G ate to S ource V oltage (V ) V DS =5V ID= VDS, Drain-to Source Voltage (V) Q g, T otal G ate C harge ( ) F igure. C apacitance F igure 9. G ate C harge 25 4 S witching T ime ( ) 6 T D(off) T D(on) VDS =5V,ID=7 VGS =V 6 6 T r T f 3 6 ID, Drain C urrent () R DS (O N) Limit. V G S =V S ingle Pulse T=25 C DC s ms ms R g, G ate R es is tance (Ω) F igure. s witching characteris tics V DS, Drain-S ource V oltage (V ) F igure. Maximum S afe O perating rea 6

7 S T M39 P-Channel -ID, Drain C urrent () VGS=V VGS=5V VGS=4.5V VGS=3.5V VGS=3V VGS=4V -ID, Drain C urrent () C -55 C 25 C VDS, Drain-to-S ource Voltage (V ) F igure. Output C haracteristics V G S, G ate-to-s ource Voltage (V ) F igure 2. Trafer C haracteristics 9.5 R DS (on) (mω) V G S =-4.5V V G S =-V R DS (ON), On-R esistance Normalized V G S =-V ID=-5 V G S =-4.5V ID= ID, Drain C urrent () F igure 3. On-R esistance vs. Drain C urrent and G ate V oltage T j( C ) T j, J unction T emperature ( C ) F igure 4. On-R esistance Variation with Drain C urrent and Temperature 7

8 S T M39 5 V th, Normalized G ate-s ource T hres hold V oltage V DS =V G S ID=-25u B V DS S, Normalized Drain-S ource B reakdown V oltage.3 ID=-25u T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation with T emperature with T emperature R DS (on) (mω) 2. ID = C C 25 C Is, S ource-drain current ().. 25 C 25 C 75 C V G S, G ate- S ource Voltage (V ) F igure 7. On-R esistance vs. G ate-s ource V oltage -VS D, Body Diode Forward Voltage (V ) F igure. B ody Diode F orward V oltage V ariation with S ource C urrent

9 S T M39 6 C, Capacitance (pf) 2 Ciss 6 4 Coss 2 Crss V G S, G ate to S ource V oltage (V ) V DS =-5 V ID= VDS, Drain-to Source Voltage (V) F igure. C apacitance Q g, T otal G ate C harge ( ) F igure 9. G ate C harge 25 5 S witching T ime ( ) 6 T r T D(off) T f T D(on) V D S = -5V,I D=- V G S = - V ID, Drain C urrent () R DS (O N) Limit. V G S =-V S ingle Pulse T=25 C.3. 5 DC s ms ms R g, G ate R es is tance (Ω) -V DS, B ody Diode F orward V oltage (V ) F igure. s witching characteris tics F igure. Maximum S afe O perating rea 9

10 S T M39 V DD ton toff R L td(on) tr td(off) V IN 9% 9% D V OUT 5 VG S V OUT % INV E R T E D % R G E N G 9% 5% 5% S VIN % PULS E WIDTH tf 9 F igure 3. S witching T est C ircuit N-C hannel F igure 4. S witching Waveforms Normalized Traient Thermal Resistance P DM t t2.. Single Pulse. R thj (t)=r (t) * R thj 2. R thj =S ee Datasheet 3. TJ M-T = P DM* R thj (t) 4. Duty Cycle, D=t/t P-C hannel 9 Square Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve Normalized Traient Thermal Resistance Single Pulse P DM t t2. R thj (t)=r (t) * R thj 2. R thj =S ee Datasheet 3. TJ M-T = P DM* R thj (t) 4. Duty Cycle, D=t/t Square Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve

11 S T M39 PC K G E OUT LINE DIME NS IONS S O- L D E.5X45 e B C.5 TYP..6 TYP.. TYP. H S Y MB OLS D E H L MILLIME T E R S MIN MX MIN INC HE S MX

12 STM39 SO-TapeandReelData SO- Carrier Tape unit: PCKGE SOPN 5 B K D D E E E2 P P P2 T (MIN) SO- Reel UNIT: TPE SIZE REEL SIZE M N W W H K S G R V