WFP13N50C Product Description Silicon N-Channel MOSFET

Transcription

1 Features 13A,500V, Ultra-low Gate charge(typical 37nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Winsemi s trench layout-based process.this technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. G D S Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 500 V ID Continuous Drain Current(@Tc=25 ) 13 A Continuous Drain Current(@Tc=100 ) 8 A IDM Drain Current Pulsed (Note1) 52 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 845 mj IAR Avalanche Current (note 1) 13 A EAR Repetitive Avalanche Energy (Note1) 5 mj dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25 ) 190 W Derating Factor above W/ TJ,Tstg Junction and Storage Temperature -55~150 TL Channel Temperature 300 Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction -to -Case /W RQJA Thermal Resistance, Junction-to -Ambient /W Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WT-017-Rev.A0 Apr.2013 WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS

2 Electrical Characteristics(Tc=25 ) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 na Gate-source breakdown voltage V(BR)GSS IG=±10 µa,vds=0v ± V Drain cut -off current IDSS VDS=500V,VGS=0V µa VDS=400V,TC= µa Drain -source breakdown voltage V(BR)DSS ID=250 µa,vgs=0v V Breakdown voltage Temperature Coefficient BVDSS/ TJ ID=250µA,Referenced to V/ Gate threshold voltage VGS(th) VDS=10V,ID=250 µa 2-4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=6.5A Ω Forward Transconductance gfs VDS=40V,ID=6.5A S Input capacitance Ciss VDS=25V, Reverse transfer capacitance Crss VGS=0V, pf Output capacitance Coss f=1mhz Turn-On rise time tr VDD=250V, Switching time Turn-On delay time Turn-Off Fall time td(on) tf ID=13A RG=25Ω Turn-Off delay time td(off) (Note4,5) ns Total gate charge(gate-source VDD=400V, Qg plus gate-drain) Gate-source charge Qgs VGS=10V, ID=13A nc Gate-drain("miller") Charge Qgd (Note4,5) Source-Drain Ratings and Characteristics(Ta=25 ) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR A Pulse drain reverse current IDRP A Forward voltage(diode) VDSF IDR=13A,VGS=0V V Reverse recovery time trr IDR=13A,VGS=0V, ns Reverse recovery charge Qrr didr / dt =100 A / µs µc Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9.0mH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25 3.ISD 13A,di/dt 200A/us,VDD<BVDSS,STARTING TJ=25 4.Pulse Test:Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution Tel : Fax : /8

3 I D Drain Current[A] V g s To p : V V 9. 0 V 8. 0 V 7. 0 V 6. 5 V Buttom: 5. 5 V Note: 1.250us pulse test 2.Tc=25 C I D Drain Current[A] C 25 C 0. 1 Note: 1.250us pulse test 2. =40V Drain-Source Voltage[V] Gate-Source Voltage[V] 0. 6 Fig.1 On Region Characteristics Fig.2 Transfer Characteristics R DS (on) Drain-S ource O n R esistance[ Ω ] 0. 4 =10V =20V I DR Reverse Drain Current[A] C 25 C I D Drain Current[A] Fig.3 On-Resistance Variation vs Drain Current and Gate Voltage V S D Source-Drain Voltage[V] Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crs s =Cgd =250V =100V Capacitance[pF] C i s s C o s s C rs s Note: 1. =0V 2.f=1M Hz V GS Gate Source Voltage[V] =400V Drain-Source Voltae[V] Fig.5 Capacitance Characteristics Qg Toltal Gate Charge[nC] Fig.6 Gate Charge Characteristics Tel : Fax : /8

4 BV DS (Normalized) I D DrainCurrent[A] Tj[ C ] Fig.7 Breakdown Voltage Variation vs. Temperature Operation in This Area is limited by R DS(on) Notes: 1. T c =25 C 2.T J=150 C Single pulse D C 10m s 100m s 1 m s u s 1 0 u s R DS(on) (Normalized) I D Drain Current[A] Notes: 1. =10V 2.I D=6.5A Tj[ C ] Fig.8On-Resistance Variation vs. Temperature Drain-Source Voltage[V] Fig.9 Maximum Safe Operation Area Tc Case Temperature[ C ] Fig.10 Maximum Drain Current vs Case temperature Z θjc (t),thermal Response D = Single pulse P D M * N o te: 1.Z θ J C (t)=2.5 C/W Max. 2.Duty Factor,D=t1/t2 3.TJM-T C=P DM* Z θj C (t) t1 t2 1 E -5 1E-4 1E t 1,Square Wave Pulse Duration [sec] Fig.11 Transient thermal Response Curve Tel : Fax : /8

5 1 2 V n F 5 0 K Ω n F Same type a s D U T 1 0 V Qg Q g s Q g d 3 m A D U T Ch a rg e Fig.12 Gate Test circuit & Waveform R L 9 0 % V D D R G 1 0 V D U T 1 0 % t d(on) t r t d (o ff) t o n t o f f t f Fig.13 Resistive Switching Test Circuit & Waveform L E A S = 1 2 L I A S 2 B S B S - V D D I D B S I A S R G V D D ID ( t ) 1 0 V D U T V D D ( t) t p t p T i m e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform Tel : Fax : /8

6 D U T I S D L Driver R G Sam e Type a s D U T V D D dv/dt controlled by RG I S D conteolled by pulse period VG S (Driver) D = Gate Pulse Width Gate Pulse Period 1 0 V IS D (DUT) I F M,Body Diode Forward Current di/dt IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VS D VD D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform Tel : Fax : /8

7 TO-220C Package Dimension U n It:m m E A F 符号 M I N M A X Q7 A P B b D c D2 d D B L2 E e F b L c L L Q Q e e Q 1 P Tel : Fax : /8

8 NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : Tel : FAX : Web Site : Tel : Fax : /8