CEP190N10/CEB190N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications

Size: px
Start display at page:

Download "CEP190N10/CEB190N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications"

Transcription

1 N-Channel Enhancement Mode Field Effect Traistor PRELIMINRY FETURE, 9, R (ON) = = uper high dee cell design for extremely low R (ON). High power and current handing capability. RoH compliant. TO-22 & TO-263 package. pplicatio Battery protection,up. CEB ERIE TO-263(-PK) CEP ERIE TO-22 BOLUTE MXIMUM RTIN T c = 25 C unless otherwise noted rain-ource oltage ate-ource oltage Parameter ymbol Limit Units rain Current-Continuous@ T C = 25 C rain Current-Pulsed T C = C Maximum Power T C = 25 C - erate above 25 C ingle Pulsed valanche Energy d ingle Pulsed valanche Current d I I M P ± E 9 I 6 35 Operating and tore Temperature Range T J,T stg -55 to 75 C W W/ C mj Thermal Characteristics Parameter ymbol Limit Units Thermal Resistance, Junction-to-Case RθJC.6 C/W Thermal Resistance, Junction-to-mbient RθJ 62.5 C/W This is preliminary information on a new product in development now. etails are subject to change without notice. Rev. 27.May

2 Electrical Characteristics T c = 25 C unless otherwise noted Off Characteristics Parameter ymbol Test Condition Min Typ Max Units rain-ource Breakdown oltage Zero ate oltage rain Current ate Body Leakage Current, Forward ate Body Leakage Current, Reverse On Characteristics b ate Threshold oltage tatic rain-ource On-Resistance ynamic Characteristics c Input Capacitance Output Capacitance Reverse Trafer Capacitance witching Characteristics c B I I F IR Turn-On elay Time t d(on) Turn-On Rise Time t r Turn-Off elay Time t d(off) Turn-Off Fall Time t f Total ate Charge Q g ate-ource Charge Q gs ate-rain Charge Q gd rain-ource iode Characteristics and Maximun Ratings rain-ource iode Forward Current rain-ource iode Forward oltage b (th) R (on) Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature b.pulse Test : Pulse Width < 3µs, uty Cycle < 2%. c.uaranteed by design, not subject to production testing. d.l =.5mH, I = 6, = 5, R = 25Ω, tarting T J = 25 C C iss C oss C rss I =, I = 25µ =, = = 2, = = -2, = =, I = 25µ =, I = 2 = 5, =, f =. MHz = 5, I = 2, =, R EN = Ω = 5, I = 2, = =, I = µ n n mω 2

3 I, rain Current () =,8,6 = =4..2 I, rain Current () C 2 4 T J =25 C 7-55 C , rain-to-ource oltage () Figure. Output Characteristics, ate-to-ource oltage () Figure 2. Trafer Characteristics C, Capacitance () C iss 5 C oss C rss R(ON), Normalized R(ON), On-Resistance(Ohms) I =2 = , rain-to-ource oltage () Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance ariation with Temperature TH, Normalized ate-ource Threshold oltage = I =25µ I, ource-drain current () = TJ, Junction Temperature( C), Body iode Forward oltage () Figure 5. ate Threshold ariation with Temperature Figure 6. Body iode Forward oltage ariation with ource Current 3

4 , ate to ource oltage () =5 I = I, rain Current () R (ON) Limit µs ms ms C T =25 C T J =75 C ingle Pulse Qg, Total ate Charge (), rain-ource oltage () B,Normalized rain-ource Breakdown oltage Figure 7. ate Charge Figure 8. Maximum afe Operating rea Tj, Junction Temperature ( C) Figure 9. Breakdown oltage ariation Temperature REN IN RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTE % tf IN % 9% 5% 5% PULE WITH Figure. witching Test Circuit Figure. witching Waveforms 4

5 r(t),normalized Effective Traient Thermal Impedance - = ingle Pulse PM t t2. R JC (t)=r (t) * R JC 2. R JC=ee atasheet 3. TJM-TC = P* R JC (t) 4. uty Cycle, =t/t quare Wave Pulse uration (msec) Figure 2. Normalized Thermal Traient Impedance Curve 2 5

CEP300N10/CEB300N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications

CEP300N10/CEB300N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications N-Channel Enhancement Mode Field Effect Traistor PRELIMINRY FETURE, 37, R (ON) = 2.2mΩ @ = uper high dee cell design for extremely low R (ON). High power and current handing capability. RoH compliant.

More information

STM4886E. N-Channel Enhancement Mode Field Effect Transistor

STM4886E. N-Channel Enhancement Mode Field Effect Transistor amhop Microelectronics Corp. Green Product N-Channel Enhancement Mode Field Effect Traistor TME Ver. PROUCT UMMRY V I R(ON) (mω) Max @ VG=V 3V.. @ VG=.V FETURE uper high dee cell design for low R(ON).

More information

MOSFET IRF7855 (KRF7855)

MOSFET IRF7855 (KRF7855) M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) 8.5.5 G 2 7 3 4 5.2 +.4 -.2 ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVSS RSON (MX.) I 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless

More information

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D.

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D. amhop Microelectronics C orp. T U/1955NL N-C hannel E nhancement Mode Field E ffect Transistor rp,12 25 ver1.2 P R OUC T UMMR Y V I R (ON) ( m Ω ) Max 55V 55 @ V G = V 8 @ VG = 4.5V F E T UR E uper high

More information

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection

More information

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S T341 P - hannel E nhancement Mode MO FE T P R ODU T UMMR Y V D ID -3V -3 F E T UR E ( m W ) Max R D (ON) 7 @ V = -1V 1 @ V = -4.V uper high dee cell design for low R D (ON ). R ugged and reliable. OT-23

More information

N-Channel 30-V (D-S) MOSFET with Schottky Diode

N-Channel 30-V (D-S) MOSFET with Schottky Diode New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @

More information

KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description EMICOUCTOR TECHIC T KF55PR/FR/P/F CHE MO FIE EFFECT TRITOR eneral escription KF55PR, KF55P This planar stripe MOFET has better characteristics, such as fast switching time, fast reverse recovery time,

More information

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

STM8309. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SamHop Microelectronics Corp. STM39 Green Product Oct.3, 26 Dual Enhancement Mode Field Effect Traistor ( N and P Channel) PRODUCT SUMMRY (N-Channel) PRODUCT SUMMRY (P-Channel) VDSS ID RDS(ON) ( mω ) Max

More information

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully

More information

30V GS = 10V 6.2nC

30V GS = 10V 6.2nC pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)

More information

Power MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50

Power MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50 Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for

More information

N-Channel 20-V (D-S) Fast Switching MOSFET

N-Channel 20-V (D-S) Fast Switching MOSFET N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %

More information

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition

More information

P-Channel 2.5 V (G-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition

More information

IR MOSFET StrongIRFET IRF40DM229

IR MOSFET StrongIRFET IRF40DM229 I, rain Current (A) IR MOFET trongirfet IRF40M229 Application Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier

More information

AOD444/AOI444 60V N-Channel MOSFET

AOD444/AOI444 60V N-Channel MOSFET AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g

More information

DACO SEMICONDUCTOR CO., LTD.

DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Features V SS = 12V Preliminary SOT227 S R S(ON) < 34 GS Fully valanche Rated Pb Free & RoHS Compliant S G Isolation Type Package Electrically Isolation base plate

More information

AON7404G 20V N-Channel MOSFET

AON7404G 20V N-Channel MOSFET AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A

More information

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:

More information

Applications. Bottom S S S. Pin 1 G D D D

Applications. Bottom S S S. Pin 1 G D D D FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency

More information

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power

More information

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features 442A N-Channel Enhancement Mode Field Effect Transistor Features V (V) = 2V I = 12A R (ON) < 1mΩ (V G = 4.5V) R (ON) < 12mΩ (V G = 2.5V) G OIC-8 G Absolute Maximum Ratings unless otherwise noted Parameter

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching

More information

N-Channel 80-V (D-S) MOSFET

N-Channel 80-V (D-S) MOSFET N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM

More information

IRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance. 1 PD 91746E SO-8.

IRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance.  1 PD 91746E SO-8. P 9746E HEXFET Chip-et for C-C Converters N Channel pplication pecific MOFETs Ideal for Mobile C-C Converters Low Conduction Losses Low witching Losses 2 8 7 escription This new device employs advanced

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load

More information

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency

More information

P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI

More information

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1) SINUTR TNI T N NN S I T TRNSISTR eneral escription 80N08P It s mainly suitable for low voltage applications such as automotive, / converters and a load switch in battery powered applications TURS V SS

More information

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.

More information

FDS V P-Channel PowerTrench MOSFET

FDS V P-Channel PowerTrench MOSFET F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested

More information

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AOD452 N-Channel Enhancement Mode Field Effect Transistor AO4 N-Channel Enhancement Mode Field Effect Transistor eneral escription The AO4 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

IRF9530, RF1S9530SM. 12A, 100V, Ohm, P-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging

IRF9530, RF1S9530SM. 12A, 100V, Ohm, P-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging IRF953, RF1953M 12A, 1V,.3 Ohm, P-Channel Power MOFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed

More information

IXFT50N60X IXFQ50N60X IXFH50N60X

IXFT50N60X IXFQ50N60X IXFH50N60X Preliminary Technical Information X-Class HiPerFET TM Power MOFET IXFT5N6X IXFQ5N6X IXFH5N6X V I 25 R (on) = 6V = 5A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-268 (IXFT) G (Tab)

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I

More information

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T TrenchP TM Power MOFET P-Channel Enhancement Mode Avalanche Rated IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T ymbol Test Conditions Maximum Ratings V = 25 C to 15 C - 1 V V R = 25 C to 15 C, R = 1M - 1 V

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V

More information

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted FP667AL/FB667AL N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View

More information

Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted

Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially

More information

D D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V

D D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM 5 V, A, 3.5 mω Features ual Cool TM Top ide Cooling PQFN package Max r (on) = 3.5 mω at V G = V, I =.5 A Max r (on) =.7 mω at V G =.5 V, I = 8 A High

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.) 8.75 at V G = 6 V a nc. at V G = V a.95 at V G =.5 V 5 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View G Ordering Information: -T-GE

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.

More information

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel

Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance

More information

N-Channel 250 V (D-S) MOSFET

N-Channel 250 V (D-S) MOSFET N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration

More information

IRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings

IRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings HEXFET Power MOFET PRELIMINRY P - 9.245B IRF7403 l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l

More information

AONR V P-Channel MOSFET

AONR V P-Channel MOSFET 3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS

More information

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel Product ummary BV 6V R (ON) 6mΩ @ V = V 24mΩ @ V = 4.5V escription and Applications I T C = +25 C 37A 29A This MOFET has been designed to meet the stringent requirements of Automotive applications. It

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration

More information

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel

Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching

More information

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A

V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking

More information

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60 AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness

More information

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted FP745L/FB745L N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration

More information