SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J

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1 M MOFE D Applications l witch Mode ower upply M) l ninterruptible ower upply l igh peed ower witching EXFE ower MOFE V D R Don) typ. I D 500V 20mΩ.A Benefits l Low ate Charge Qg results in imple Drive Requirement l Improved ate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current O-220 FLL-AK Absolute Maximum Ratings arameter Max. nits I D C = 25 C Continuous Drain Current, V V. I D C = 0 C Continuous Drain Current, V V 4.2 A I DM ulsed Drain Current c 2 D C = 25 C ower Dissipation 45 W Linear Derating Factor 0.3 W/ C V ate-to-ource Voltage ±30 V dv/dt eak Diode Recovery dv/dt e V/ns J Operating Junction and -55 to 50 torage emperature Range C oldering emperature, for seconds Mounting torqe, -32 or M3 screw 300.mm from case ).) N m lbf in) Avalanche Characteristics arameter yp. Max. nits E A ingle ulse Avalanche Energyd 20 mj I AR Avalanche Current c. A E AR Repetitive Avalanche Energy c 4.5 mj hermal Resistance arameter yp. Max. nits R θjc Junction-to-Case 2. C/W R θja Junction-to-Ambient 5 4/2/04

2 tatic J = 25 C unless otherwise specified) arameter Min. yp. Max. nits Conditions V BR)D Drain-to-ource Breakdown Voltage 500 V V = 0V, I D = 250µA V BR)D / J Breakdown Voltage emp. Coefficient 0.5 V/ C Reference to 25 C, I D = ma R Don) tatic Drain-to-ource On-Resistance mω V = V, I D = 4.0A f V th) ate hreshold Voltage V V D = V, I D = 250µA I D Drain-to-ource Leakage Current 50 µa V D = 500V, V = 0V 250 V D = 400V, V = 0V, J = 25 C I ate-to-ource Forward Leakage 0 na V = 30V ate-to-ource Reverse Leakage -0 V = -30V Dynamic J = 25 C unless otherwise specified) arameter Min. yp. Max. nits Conditions gfs Forward ransconductance 4. V V D = 50V, I D = 4.0A Q g otal ate Charge 8 I D =.A Q gs ate-to-ource Charge 24 nc V D = 400V Q gd ate-to-drain "Miller") Charge 44 V = V f t don) urn-on Delay ime V DD = 250V t r Rise ime I D =.A t doff) urn-off Delay ime 28 ns R = 38Ω t f Fall ime 8.4 V = V f C iss Input Capacitance 2 V = 0V C oss Output Capacitance 240 V D = 25V C rss Reverse ransfer Capacitance 2 pf ƒ =.0Mz C oss Output Capacitance 200 V = 0V, V D =.0V, ƒ =.0Mz C oss Output Capacitance 2 V = 0V, V D = 400V, ƒ =.0Mz C oss eff. Effective Output Capacitance 20 V = 0V, V D = 0V to 400V e Diode Characteristics arameter Min. yp. Max. nits Conditions I Continuous ource Current. MOFE symbol Body Diode) A showing the I M ulsed ource Current 2 integral reverse Body Diode)ch p-n junction diode. V D Diode Forward Voltage 2.0 V J = 25 C, I =.A, V = 0V f t rr Reverse Recovery ime ns J = 25 C, I F =.A Q rr Reverse RecoveryCharge nc di/dt = 0A/µs f t on Forward urn-on ime Intrinsic turn-on time is negligible turn-on is dominated by LLD) Notes: Repetitive rating; pulse width limited by ulse width 300µs; duty cycle 2%. max. junction temperature. ee Fig. ). C oss eff. is a fixed capacitance that gives the same charging time tarting J = 25 C, L = 3m, R = 25Ω, as C oss while V D is rising from 0 to 80% V D. I A =.A, dv/dt = V/ns ee Figure 2a). ƒ I D.A, di/dt 330A/µs, V DD V BR)D, J 50 C. 2 D

3 I D, Drain-to-ource Current Α) I D, Drain-to-ource Current A) I D, Drain-to-ource Current A) 00 0 V O 5V 2V V 8.0V.0V.0V 5.5V BOOM 5.0V 0 V O 5V 2V V 8.0V.0V.0V 5.5V BOOM 5.0V 5.0V V 20µs LE WID j = 25 C 0. 0 V D, Drain-to-ource Voltage V) µs LE WID j = 50 C 0. 0 V D, Drain-to-ource Voltage V) Fig. ypical Output Characteristics Fig 2. ypical Output Characteristics 0.00 J = 50 C J = 25 C V D = 50V 20µs LE WID V, ate-to-ource Voltage V) R Don), Drain-to-ource On Resistance Normalized) 3.0 I D =.A V = V J, Junction emperature C) Fig 3. ypical ransfer Characteristics Fig 4. Normalized On-Resistance Vs. emperature 3

4 C, CapacitancepF) I D, Reverse Drain Current A) I D, Drain-to-ource Current A) V E V) V = 0V, f = MZ C iss = C gs C gd, C ds ORED C rss = C gd C oss = C ds C gd C iss 2 8 I D =.A 400V 250V 0V 0 C oss 4 C rss V D, Drain-to-ource Voltage V) Q, otal ate Charge nc) Fig 5. ypical Capacitance Vs. Drain-to-ource Voltage Fig. ypical ate Charge Vs. ate-to-ource Voltage OERAION IN I AREA LIMIED BY R D on).00 J = 50 C 0µsec.00 J = 25 C msec V = 0V V D, ource-todrain Voltage V) 0. c = 25 C j = 50 C ingle ulse msec V D, Drain-to-ource Voltage V) Fig. ypical ource-drain Diode Forward Voltage Fig 8. Maximum afe Operating Area 4

5 .0 V D R D I D, Drain Current A) Fig a. witching ime est Circuit V D 0% R V V ulse Width µs Duty Factor 0. % D... - V DD C, Case emperature C) Fig. Maximum Drain Current Vs. Case emperature % V t don) t r t doff) t f Fig b. witching ime Waveforms hermal Response Z thjc ) D = DM t 0.0 t2 INLE LE Notes: ERMAL REONE). Duty factor D = t / t 2 2. eak J= DM x Z thjc C t, Rectangular ulse Duration sec) Fig. Maximum Effective ransient hermal Impedance, Junction-to-Case 5

6 E A, ingle ulse Avalanche Energy mj) I D O 3.0A 4.2A BOOM.A 5V 400 V D L DRIVER R 20V tp D.. I A 0.0Ω - V DD A tarting J, Junction emperature C) Fig 2c. nclamped Inductive est Circuit Fig 2a. Maximum Avalanche Energy Vs. Drain Current tp V BR)D I A Fig 2d. nclamped Inductive Waveforms Current Regulator ame ype as D... 50KΩ Q 2V.2µF.3µF D... V - D V Q Q D V V 3mA I I D Current ampling Resistors Fig 3a. ate Charge est Circuit Charge Fig 3b. Basic ate Charge Waveform

7 eak Diode Recovery dv/dt est Circuit D.. ƒ - Circuit Layout Considerations Low tray Inductance round lane Low Leakage Inductance Current ransformer - - R dv/dt controlled by R Driver same type as D... I D controlled by Duty Factor "D" D... - Device nder est - V DD Driver ate Drive eriod.w. D =.W. eriod V =V * D... I D Waveform Reverse Recovery Current Body Diode Forward Current di/dt D... V D Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I D * V = 5V for Logic Level Devices Fig 4. For N-Channel EXFE ower MOFEs

8 O-220 Full-ak ackage Outline Dimensions are shown in millimeters inches).00.30) ).0.4).40.40) ) ø 3..23) - A ) ).5.045) MIN ) 3..22) ) 4.0.8)..280).0.23) 2.80.) 2.0.2) LEAD AINMEN - AE 2 - DRAIN 3 - ORCE NOE: DIMENIONIN & OLERANCIN ER ANI Y4.5M, 82 2 CONROLLIN DIMENION: INC ) ) - B - C D ) 3X ) ) 2X ) 3X ) ) M A M B ) 3X ) ) 2.5.4) A B MINIMM CREEAE DIANCE BEWEEN A-B-C-D = ) O-220 Full-ak art Marking Information B # D' A D I D D C ) Q Y V I Q *, ),5 I D D DA I 8 DI `! " # " C D X 8. B #! X X I 8 F DI ` C DI 2 ` ` #! F F DI X 8 O-22O Full-ak package is not recommended for urface Mount Application. Data and specifications subject to change without notice. his product has been designed and qualified for the Industrial market. Qualification tandards can be found on IR s Web site. IR WORLD EADQARER: 233 Kansas t., El egundo, California 0245, A el: 3) AC Fax: 3) Visit us at for sales contact information. 04/04 8