IRFD A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet July File Number 2315.

Transcription

1 IRF1 ata heet July 1999 File Number A, 1V,.3 Ohm, N-Channel Power MOFET This advanced power MOFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA171. Ordering Information PART NUMBER PACKAE BRAN IRF1 HEXIP IRF1 NOTE: When ordering, use the entire part number. Features 1.3A, 1V r (ON) =.3Ω ingle Pulse Avalanche Energy Rated OA is Power issipation Limited Nanosecond witching peeds Linear Transfer Characteristics High Input Impedance Related Literature - TB33 uidelines for oldering urface Mount Components to PC Boards ymbol Packaging HEXIP RAIN ATE OURCE -7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper E Handling Procedures. or Copyright Intersil Corporation 1999

2 IRF1 Absolute Maximum Ratings T C = o C, Unless Otherwise pecified IRF1 UNIT rain to ource Breakdown Voltage (Note 1) V rain to ate Voltage (R = kω) (Note 1) V R 1 V Continuous rain Current I 1.3 A Pulsed rain Current I M. A ate to ource Voltage V ± V Maximum Power issipation P 1. W Linear erating Factor (ee Figure 1) W/ o C ingle Pulse Avalanche Energy Rating (Note 3) E A 36 mj Operating and torage Temperature T J, T T - to 1 o C Maximum Temperature for oldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, ee Techbrief T pkg 6 o C o C CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = o C to 1 o C. Electrical pecifications T C = o C, Unless Otherwise pecified PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT rain to ource Breakdown Voltage B I = µa, V = V (Figure 9) V ate Threshold Voltage V (TH) V =, I = µa. -. V Zero ate Voltage rain Current I = Rated B, V = V - - µa =. x Rated B, V = V, T J = 1 o C - - µa On-tate rain Current (Note ) I (ON) > I (ON) x r (ON) Max, V = 1V A ate ource Leakage I V = ±V - - ± na rain ource On Resistance (Note ) r (ON) I =.6A, V = 1V (Figures 7, ) -..3 Ω Forward Transconductance (Note ) g fs > I (ON) x r (ON)MAX, I =.6A (Figure 11) Turn-On elay Time t d(on) V =. x Rated B, I 1.3A, - ns Rise Time t r V = 1V, R = 9.1Ω R L = 3.Ω for V = V ns Turn-Off elay Time t d(off) MOFET witching Times are Essentially - 1 ns Fall Time t f Independent of Operating Temperature ns Total ate Charge (ate to ource + ate to rain) Q g(tot) V = 1V, I = 1.3A, =. x Rated B, I g(ref) = 1.mA (Figure 13) ate Charge is Essentially Independent of Operating Temperature nc ate to ource Charge Q gs nc ate to rain Miller Charge Q gd -. - nc Input Capacitance C I V = V, = V, f = 1MHz (Figure 1) - - pf Output Capacitance C O - - pf Reverse Transfer Capacitance C R - - pf Internal rain Inductance L Measured From the rain Lead, mm (.in) from Package to Center of ie Internal ource Inductance L Measured From the ource Lead, mm (.in) from Header to ource Bonding Pad Modified MOFET ymbol howing the Internal evice s Inductances L -. - nh nh L Thermal Resistance Junction to Ambient R θja Free Air Operation o C/W -76

3 IRF1 ource to rain iode pecifications PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT Continuous ource to rain Current I Modified MOFET ymbol A Pulse ource to rain Current I howing the Integral M - -. A Reverse P-N Junction iode ource to rain iode Voltage (Note ) V T J = o C, I = 1.3A, V = V (Figure 1) - -. V Reverse Recovery Time t rr T J = 1 o C, I = 1.3A, di /dt = 1A/µs - - ns Reverse Recovery Charge Q RR T J = 1 o C, I = 1.3A, di /dt = 1A/µs µc NOTE:. Pulse test: pulse width 3µs, duty cycle %. 3. V = V, starting T J = o C, L = 3mH, R = Ω, peak I A = 1.3A. Typical Performance Curves Unless Otherwise pecified POWER IIPATION MULTIPLIER I, RAIN CURRENT (A) T A, AMBIENT TEMPERATURE ( o C) T A, AMBIENT TEMPERATURE ( o C) FIURE 1. NORMALIZE POWER IIPATION vs AMBIENT TEMPERATURE FIURE. MAXIMUM CONTINUOU RAIN CURRENT vs AMBIENT TEMPERATURE 1 V = 1V PULE URATION = µs UTY CYCLE =.% MAX 1.1 OPERATION IN THI AREA MAY BE LIMITE BY r (ON) 1µs 1ms 1ms 1ms 16 1 V = 9V V = V V = 7V V = 6V V = V.1 T J = MAX RATE.1 1 1, RAIN TO OURCE VOLTAE (V) 1 C V = V 1 3, RAIN TO OURCE VOLTAE (V) FIURE 3. FORWAR BIA AFE OPERATIN AREA FIURE. OUTPUT CHARACTERITIC -77

4 IRF1 Typical Performance Curves Unless Otherwise pecified (Continued) 1 6 PULE URATION = µs UTY CYCLE =.% MAX V = 1V V = 9V V = V 1 3, RAIN TO OURCE VOLTAE (V) V = 7V V = 6V V = V V = V I (ON), RAIN TO OURCE CURRENT (A) 16 1 PULE URATION = µs UTY CYCLE =.% MAX > I (ON) x r (ON)MAX T J = o C T J = 1 o C T J = - o C 6 1 V, ATE TO OURCE VOLTAE (V) FIURE. ATURATION CHARACTERITIC FIURE 6. TRANFER CHARACTERITIC r (ON), RAIN TO OURCE ON REITANCE (Ω)..6 V = 1V.. V = V 1 3 µs PULE TET NOTE: Heating effect of µs pulse is minimal. FIURE 7. RAIN TO OURCE ON REITANCE vs ATE VOLTAE AN RAIN CURRENT NORMALIZE RAIN TO OURCE ON REITANCE PULE URATION = µs UTY CYCLE =.% MAX V = 1V, I =.6A T J, JUNCTION TEMPERATURE ( o C) FIURE. NORMALIZE RAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE I = µa C, CAPACITANCE (pf) 1 6 V = V, f = 1MHz C I = C + C C R = C C O C + C C I C O C R.7-1 T J, JUNCTION TEMPERATURE ( o C) , RAIN TO OURCE VOLTAE (V) FIURE 9. NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE vs JUNCTION TEMPERATURE FIURE 1. CAPACITANCE vs RAIN TO OURCE VOLTAE -7

5 IRF1 Typical Performance Curves Unless Otherwise pecified (Continued) g fs, TRANCONUCTANCE () 3 1 PULE URATION = µs UTY CYCLE =.% MAX 1 16 T J = - o C T J = o C T J = 1 o C I, OURCE TO RAIN CURRENT (A) PULE URATION = µs 1 UTY CYCLE =.% MAX 1 T J = 1 o C T J = o C V, OURCE TO RAIN VOLTAE (V) FIURE 11. TRANCONUCTANCE vs RAIN CURRENT FIURE 1. OURCE TO RAIN IOE VOLTAE I =.A V, ATE TO OURCE (V) 1 1 = V = V = V 6 1 Q, ATE CHARE (nc) FIURE 13. ATE TO OURCE VOLTAE vs ATE CHARE Test Circuits and Waveforms B L t P VARY t P TO OBTAIN REQUIRE PEAK I A V R + V - I A V UT V t P I A.1Ω t AV FIURE 1. UNCLAMPE ENERY TET CIRCUIT FIURE 1. UNCLAMPE ENERY WAVEFORM -79

6 IRF1 Test Circuits and Waveforms (Continued) t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R V - 1% 1% UT 9% V V 1% % PULE WITH % FIURE 16. WITCHIN TIME TET CIRCUIT FIURE 17. REITIVE WITCHIN WAVEFORM CURRENT REULATOR (IOLATE UPPLY) V 1V BATTERY.µF kω.3µf AME TYPE A UT Q gs Q gd Q g(tot) V UT I g(ref) I CURRENT AMPLIN REITOR I CURRENT AMPLIN REITOR I g(ref) FIURE 1. ATE CHARE TET CIRCUIT FIURE 19. ATE CHARE WAVEFORM All Intersil semiconductor products are manufactured, assembled and tested under IO9 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. ales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 3, Mail top 3- Melbourne, FL 39 TEL: (7) 7-7 FAX: (7) 7-7 For information regarding Intersil Corporation and its products, see web site - EUROPE Intersil A Mercure Center 1, Rue de la Fusee 113 Brussels, Belgium TEL: (3) FAX: (3).7.. AIA Intersil (Taiwan) Ltd. 7F-6, No. 11 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (6) FAX: (6) 71 39