1 pc Charge Injection, 100 pa Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches ADG611/ADG612/ADG613

Size: px
Start display at page:

Download "1 pc Charge Injection, 100 pa Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches ADG611/ADG612/ADG613"

Transcription

1 a FEATURE 1 pc Charge Injection 2.7 V to 5.5 V ual upply +2.7 V to +5.5 V ingle upply Automotive Temperature Range 4 C to +125 C 1 pa 25 C Leakage Currents 85 On-Resistance Rail-to-Rail witching Operation Fast witching Times 16-Lead TOP Packages Typical Power Consumption (<.1 W) TTL/CMO-Compatible Inputs APPLICATION Automatic Test Equipment ata Acquisition ystems Battery-Powered ystems Communication ystems ample and Hold ystems Audio ignal Routing Relay Replacement Avionics 1 pc Charge Injection, 1 pa Leakage, CMO 5 V/+5 V/+3 V Quad PT witches AG611/AG612/AG613 IN1 IN2 IN3 IN4 AG611 FUNCTIONAL BLOCK IAGRAM IN1 IN2 IN3 IN4 AG IN1 IN2 IN3 IN4 WITCHE HOWN FOR A LOGIC 1 INPUT AG GENERAL ECRIPTION The AG611, AG612, and AG613 are monolithic CMO devices containing four independently selectable switches. These switches offer ultralow charge injection of 1 pc over full input signal range and typical leakage currents of 1 pa at 25 C. They are fully specified for ±5 V, +5 V, and +3 V supplies. They contain four independent single-pole/single-throw (PT) switches. The AG611 and AG612 differ only in that the digital control logic is inverted. The AG611 switches are turned on with a logic low on the appropriate control input, while a logic high is required to turn on the switches of the AG612. The AG613 contains two switches whose digital control logic is similar to the AG611, while the logic is inverted on the other two switches. Each switch conducts equally well in both directions when ON and has an input signal range that extends to the supplies. The AG613 exhibits break-before-make switching action. The AG611/AG612/AG613 are available in small 16-lead TOP packages. PROUCT HIGHLIGHT 1. Ultralow Charge Injection (1 pc typically) 2. ual ± 2.7 V to ±5.5 V or ingle +2.7 V to +5.5 V Operation. 3. Automotive Temperature Range, 4 C to +125 C 4. mall 16-lead TOP package. REV. Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. One Technology Way, P.O. Box 916, Norwood, MA , U..A. Tel: 781/ Fax: 781/ Analog evices, Inc., 22

2 AG611/AG612/AG613 PECIFICATION UAL UPPLY 1 ( = +5 V 1%, = 5 V 1%, GN = V, unless otherwise noted.) Y Version 4 C 4 C Parameter 25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range to V On-Resistance (R ON ) 85 Ω typ V = ± 3 V, I = 1 ma Ω max Test Circuit 1 On-Resistance Match Between 2 Ω typ Channels ( R ON ) Ω max V = ± 3 V, I = 1 ma On-Resistance Flatness (R FLAT(ON) ) 25 Ω typ V = ± 3 V, I = 1 ma Ω max LEAKAGE CURRENT = +5.5 V, = 5.5 V ource OFF Leakage I (OFF) ±.1 na typ V = ±4.5 V, V = 4.5 V; ±.1 ±.25 ± 2 na max Test Circuit 2 rain OFF Leakage I (OFF) ±.1 na typ V = ±4.5 V, V = 4.5 V; ±.1 ±.25 ± 2 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = V = ±4.5 V, Test Circuit 3 ±.1 ±.25 ± 6 na max IGITAL INPUT Input High Voltage, H 2.4 V min Input Low Voltage, L.8 V max Input Current I INL or I INH.5 µa typ = L or H ±.1 µa max C IN, igital Input Capacitance 2 pf typ YNAMIC CHARACTERITIC 2 t ON 45 ns typ R L = 3 Ω, C L = 35 pf ns max V = 3. V, Test Circuit 4 t OFF 25 ns typ R L = 3 Ω, C L = 35 pf ns max V = 3. V, Test Circuit 4 Break-Before-Make Time elay, t 15 ns typ R L = 3 Ω, C L = 35 pf 1 ns min V 1 = V 2 = 3. V, Test Circuit 5 Charge Injection.5 pc typ V = V, R = Ω, C L = 1 nf, Test Circuit 6 Off Isolation 65 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz, Test Circuit 7 Channel-to-Channel Crosstalk 9 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz, Test Circuit 8 3 db Bandwidth 68 MHz typ R L = 5 Ω, C L = 5 pf, Test Circuit 9 C (OFF) 5 pf typ f = 1 MHz C (OFF) 5 pf typ f = 1 MHz C, C (ON) 5 pf typ f = 1 MHz POWER REQUIREMENT = +5.5 V, = 5.5 V I.1 µa typ igital Inputs = V or 5.5 V 1. µa max I.1 µa typ igital Inputs = V or 5.5 V 1. µa max NOTE 1 Temperature range is as follows. Y Version: 4 C to +125 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. 2 REV.

3 INGLE UPPLY 1 ( = 5 V 1%, = V, GN = V, unless otherwise noted.) Y Version 4 C 4 C Parameter 25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V On-Resistance (R ON ) 21 Ω typ V = 3.5 V, I = 1 ma; Ω max Test Circuit 1 On-Resistance Match Between 3 Ω typ V = 3.5 V, I = 1 ma Channels ( R ON ) Ω max LEAKAGE CURRENT = 5.5 V ource OFF Leakage I (OFF) ±.1 na typ V = 1 V/4.5 V, V = 4.5 V/1 V; ±.1 ±.25 ± 2 na max Test Circuit 2 rain OFF Leakage I (OFF) ±.1 na typ V = 1 V/4.5 V, V = 4.5 V/1 V; ±.1 ±.25 ± 2 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = V = 1 V or 4.5 V, Test Circuit 3 ±.1 ±.25 ± 6 na max IGITAL INPUT Input High Voltage, H 2.4 V min Input Low Voltage, L.8 V max Input Current I INL or I INH.5 µa typ = L or H ±.1 µa max C IN, igital Input Capacitance 2 2 pf typ YNAMIC CHARACTERITIC 2 t ON 7 ns typ R L = 3 Ω, C L = 35 pf ns max V = 3. V, Test Circuit 4 t OFF 25 ns typ R L = 3 Ω, C L = 35 pf ns max V = 3. V, Test Circuit 4 Break-Before-Make Time elay, t 25 ns typ R L = 3 Ω, C L = 35 pf 1 ns min V 1 = V 2 = 3. V, Test Circuit 5 Charge Injection 1 pc typ V = V, R = Ω, C L = 1 nf; Test Circuit 6 Off Isolation 62 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz Test Circuit 7 Channel-to-Channel Crosstalk 9 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz Test Circuit 8 3 db Bandwidth 68 MHz typ R L = 5 Ω, C L = 5 pf, Test Circuit 9 C (OFF) 5 pf typ f = 1 MHz C (OFF) 5 pf typ f = 1 MHz C, C (ON) 5 pf typ f = 1 MHz POWER REQUIREMENT = 5.5 V I.1 µa typ igital Inputs = V or 5.5 V 1. µa max NOTE 1 Temperature ranges are as follows. Y Version: 4 C to +125 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. AG611/AG612/AG613 REV. 3

4 AG611/AG612/AG613 PECIFICATION INGLE UPPLY 1 ( = 3 V 1%, = V, GN = V, unless otherwise noted.) Y Version 4 C 4 C Parameter 25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V On-Resistance (R ON ) Ω typ V = 1.5 V, I = 1 ma; Test Circuit 1 LEAKAGE CURRENT = 3.3 V ource OFF Leakage I (OFF) ±.1 na typ V = 1 V/3 V, V = 3 V/1 V; ±.1 ±.25 ± 2 na max Test Circuit 2 rain OFF Leakage I (OFF) ±.1 na typ V = 1 V/3 V, V = 3 V/1 V; ±.1 ±.25 ± 2 na max Test Circuit 2 Channel ON Leakage I, I (ON) ±.1 na typ V = V = 1 V or 3 V, Test Circuit 3 ±.1 ±.25 ± 6 na max IGITAL INPUT Input High Voltage, H 2. V min Input Low Voltage, L.8 V max Input Current I INL or I INH.5 µa typ = L or H ±.1 µa max C IN, igital Input Capacitance 2 pf typ YNAMIC CHARACTERITIC 2 t ON 13 ns typ R L = 3 Ω, C L = 35 pf ns max V = 2 V, Test Circuit 4 t OFF 4 ns typ R L = 3 Ω, C L = 35 pf ns max V = 2 V, Test Circuit 4 Break-Before-Make Time elay, t 5 ns typ R L = 3 Ω, C L = 35 pf 1 ns min V 1 = V 2 = 2 V, Test Circuit 5 Charge Injection 1.5 pc typ V = V, R = Ω, C L = 1 nf; Test Circuit 6 Off Isolation 62 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz Test Circuit 7 Channel-to-Channel Crosstalk 9 db typ R L = 5 Ω, C L = 5 pf, f = 1 MHz Test Circuit 8 3 db Bandwidth 68 MHz typ R L = 5 Ω, C L = 5 pf, Test Circuit 9 C (OFF) 5 pf typ f = 1 MHz C (OFF) 5 pf typ f = 1 MHz C, C (ON) 5 pf typ f = 1 MHz POWER REQUIREMENT = 3.3 V I.1 µa typ igital Inputs = V or 3.3 V 1. µa max NOTE 1 Temperature ranges are as follows. Y Version: 4 C to +125 C. 2 Guaranteed by design, not subject to production test. pecifications subject to change without notice. 4 REV.

5 AG611/AG612/AG613 ABOLUTE MAXIMUM RATING 1 (T A = 25 C unless otherwise noted) to V to GN V to +6.5 V to GN V to 6.5 V Analog Inputs V to +.3 V igital Inputs GN.3 V to +.3 V or 3 ma, Whichever Occurs First Peak Current, or ma (Pulsed at 1 ms, 1% uty Cycle max) Continuous Current, or ma 3 V operation 85 C to 125 C ma Operating Temperature Range Automotive (Y Version) C to +125 C torage Temperature Range C to +15 C Junction Temperature C 16-Lead TOP, θ JA Thermal Impedance C/W Lead Temperature, oldering Vapor Phase (6 sec) C Infrared (15 sec) C NOTE 1 tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN,, or will be clamped by internal diodes. Current should be limited to the maximum ratings given. ORERING GUIE Model Temperature Range Package escription Package Option AG611YRU 4 C to +125 C Thin hrink mall Outline Package (TOP) RU-16 AG612YRU 4 C to +125 C Thin hrink mall Outline Package (TOP) RU-16 AG613YRU 4 C to +125 C Thin hrink mall Outline Package (TOP) RU-16 Table I. AG611/AG612 Truth Table AG611 In AG612 In witch Condition 1 ON 1 OFF Table II. AG613 Truth Table Logic witch 1, 4 witch 2, 3 OFF ON 1 ON OFF PIN CONFIGURATION IN1 1 1 GN 4 4 IN AG611 3 AG AG TOP VIEW 5 (Not to cale) NC = NO CONNECT 16 IN2 2 2 NC 3 3 IN3 CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AG611/AG612/AG613 features proprietary E protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. WARNING! E ENITIVE EVICE REV. 5

6 AG611/AG612/AG613 I I TERMINOLOGY Most Positive Power upply Potential Most Negative Power upply Potential Positive upply Current Negative upply Current GN Ground ( V) Reference ource Terminal. May be an input or output rain Terminal. May be an input or output IN Logic Control Input V (V ) Analog Voltage on Terminals, R ON Ohmic Resistance between and R ON On Resistance match between any two channels, i.e., R ONMAX R ONMIN. R FLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal range. I (OFF) ource Leakage Current with the witch OFF I (OFF) rain Leakage Current with the witch OFF I, I (ON) Channel Leakage Current with the witch ON L Maximum Input Voltage for Logic H Minimum Input Voltage for Logic 1 I INL (I INH ) Input Current of the igital Input. C (OFF) OFF witch ource Capacitance. Measured with reference to ground. C (OFF) OFF witch rain Capacitance. Measured with reference to ground. C, C (ON) ON witch Capacitance. Measured with reference to ground. C IN igital Input Capacitance t ON elay between applying the digital control input and the output switching on. ee Test Circuit 4. t OFF elay between applying the digital control input and the output switching off. Charge A measure of the glitch impulse transferred from the digital input to the analog output during switching. Injection Off Isolation A measure of unwanted signal coupling through an OFF switch. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. On Response Frequency Response of the ON witch Insertion Loss ue to the ON Resistance of the witch Loss 6 REV.

7 Typical Performance Characteristics AG611/AG612/AG613 ON REITANCE T A = 25 C 3.3V 4.5V 2.7V 3V 5.5V 5V V, V V ON REITANCE T A = 25 C = V = 2.7V = 3V = 3.3V = 4.5V = 5V V, V V ON REITANCE C +85 C 4 C +125 C = +5V = 5V V, V V TPC 1. On Resistance vs. V (V ), ual upply TPC 2. On Resistance vs. V (V ), ingle upply TPC 3. On Resistance vs. V (V ) for ifferent Temperatures, ual upply 6 5 = 5V = V 2 1 I (OFF) 2 1 I (OFF) ON REITANCE C +125 C +25 C 4 C V, V V CURRENT na I (OFF) I, I (ON) 5 = +5V = 5V TEMPERATURE C 12 CURRENT na I (OFF) I, I (ON) 5 = 5V = V TEMPERATURE C 12 TPC 4. On Resistance vs. V (V ) for ifferent Temperatures, ingle upply TPC 5. Leakage Currents vs. Temperature, ual upply TPC 6. Leakage Currents vs. Temperature, ingle upply Qinj pc T A = 25 C = +3V = V = +5V = V = +5V = 5V V V TIME ns t ON, = +5V = V t ON, = +5V = 5V t OFF, = +5V = V t OFF, = +5V = 5V TEMPERATURE C 12 ATTENUATION db = 5V = +5V = 5V = V FREQUENCY MHz T A = 25 C 1 TPC 7. Charge Injection vs. ource Voltage TPC 8. t ON /t OFF Times vs. Temperature TPC 9. On Response vs. Frequency REV. 7

8 AG611/AG612/AG613 ATTENUATION db ATTENUATION db FREQUENCY MHz = 5V = +5V T A = +25 C TPC 1. Off Isolation vs. Frequency k = +5V = 5V T A = 25 C k FREQUENCY MHz APPLICATION Figure 1 illustrates a photodetector circuit with programmable gain. With the resistor values shown in the circuits, and using different combinations of switches, gains in the range of 2 to 16 can be achieved. 1 (LB) IN1 IN2 IN3 (MB) IN4 2.5V C1 5V GN R1 33k R4 24k R6 12k R8 12k R9 12k R9 12k 5V R5 24k R7 12k GAIN RANGE 2 TO 16 R2 51k R3 51k Figure 1. Photodetector Circuit with Programmable Gain 2.5V TPC 11. Crosstalk vs. Frequency 8 REV.

9 Test Circuits AG611/AG612/AG613 I V1 I (OFF) A I (OFF) A NC I (ON) A V R ON = V1/I V V NC = NO CONNECT V Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage.1 F.1 F AG611 5% 5% AG612 5% 5% V IN R L 3 C L 35pF 9% 9% GN t ON t OFF Test Circuit 4. witching Times.1 F.1 F V 5% 5% V 1 V 2 IN1, IN AG613 GN R L2 3 C L2 35pF 2 R L1 3 C L 35pF V V 9% t 9% t 9% 9% Test Circuit 5. Break-Before-Make Time elay AG611 V R IN C L 1nF AG612 ON OFF GN Q INJ = C L Test Circuit 6. Charge Injection REV. 9

10 AG611/AG612/AG613.1 F.1 F.1 F.1 F IN 5 NETWORK ANALYZER 5 V VIN1 5 GN R L 5 V NC GN VIN2 R L 5 OFF IOLATION = 2 LOG V CHANNEL-TO-CHANNEL CROTALK = 2 LOG V / Test Circuit 7. Off Isolation Test Circuit 8. Channel-to-Channel Crosstalk.1 F.1 F NETWORK ANALYZER IN GN 5 V R L 5 INERTION LO = 2 LOG WITH WITCH WITHOUT WITCH Test Circuit 9. Bandwidth 1 REV.

11 AG611/AG612/AG613 OUTLINE IMENION imensions shown in inches and (mm). 16-Lead TOP (RU-16).21 (5.1).193 (4.9) (4.5).169 (4.3).256 (6.5).246 (6.25) PIN 1.6 (.15).2 (.5).433 (1.1) MAX EATING PLANE.256 (.65) BC.118 (.3).75 (.19).79 (.2).35 (.9) 8.28 (.7).2 (.5) REV. 11

12 PRINTE IN U..A. C2753 1/2() 12

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604 a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On

More information

onlinecomponents.com

onlinecomponents.com a FEATURES +.8 V to +. ingle Supply 2. V ual Supply 2. ON Resistance. ON Resistance Flatness pa Leakage Currents 4 ns Switching Times Single 6-to- Multiplexer AG76 ifferential 8-to- Multiplexer AG77 28-Lead

More information

CMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A

CMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A a FEATURES +.8 V to +. ingle Supply. V ual Supply. ON Resistance. ON Resistance Flatness pa Leakage Currents ns Switching Times Single -to- Multiplexer AG ifferential 8-to- Multiplexer AG 8-Lead TSSOP

More information

Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A

Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A a FEATURE Bandwidth >4 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness.3 Typical ingle 3 V/5 upply Operation Very Low istortion:

More information

CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633

CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633 CMOS ±5 V/+5 V/+3 V Triple SPT Switch AG633 FEATURES ±2 V to ±6 V ual Supply 2 V to 12 ingle Supply Automotive Temperature Range 4 o C to +125 o C

More information

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409 a FEATURES 44 upply Maximum Ratings to Analog Signal Range Low On Resistance ( max) Low Power (I SUPPLY < 75 A) Fast Switching Break-Before-Make Switching Action Plug-in Replacement for G408/G409 APPLICATIONS

More information

Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos Quad SPST Switches ADG1212-EP

Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos Quad SPST Switches ADG1212-EP Enhanced Product Low Capacitance, Low Charge Injection, ±15 V/+12 V icmo Quad PT witches FEATURE 1 pf off capacitance 2.6 pf on capacitance

More information

AG726/AG732 SPECIFICATIONS ( = V %, = V, GN = V, unless otherwise noted.) B Version 4 C Parameter +2 C to +8 C Unit Test Conditions/Comments ANALOG SW

AG726/AG732 SPECIFICATIONS ( = V %, = V, GN = V, unless otherwise noted.) B Version 4 C Parameter +2 C to +8 C Unit Test Conditions/Comments ANALOG SW a FEATURES.8 V to. ingle Supply 2. V ual-supply Operation 4 On Resistance. On Resistance Flatness 48-Lead TQFP or 48-Lead 7 mm 7 mm CSP Packages Rail-to-Rail Operation 3 ns Switching Times Single 32-to-

More information

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP LC 2 MOS Precision Analog Switch in MSOP AG49-EP FEATURES 44 V supply maximum ratings VSS to V analog signal range Low on resistance:

More information

High Voltage, Latch-Up Proof, 4-Channel Multiplexer ADG5204

High Voltage, Latch-Up Proof, 4-Channel Multiplexer ADG5204 High Voltage, Latch-Up Proof, 4-Channel Multiplexer AG524 FEATURES Latch-up proof 3 pf off source capacitance 26 pf off drain capacitance.6 pc charge injection Low leakage:.4 na maximum at 85 C ±9 V to

More information

Low Voltage 2-1 Mux, Level Translator ADG3232

Low Voltage 2-1 Mux, Level Translator ADG3232 Low Voltage 2-1 Mux, Level Translator ADG3232 FEATURES Operates from 1.65 V to 3.6 V Supply Rails Unidirectional Signal Path, Bidirectional Level Translation Tiny 8-Lead SOT-23 Package Short Circuit Protection

More information

Improved, Dual, High-Speed Analog Switches

Improved, Dual, High-Speed Analog Switches -477; Rev ; 6/ Improved, ual, High-peed Analog witches General escription Maxim's redesigned G4// analog switches now feature guaranteed low on-resistance matching between switches (Ω max) and guaranteed

More information

SGM7227 High Speed USB 2.0 (480Mbps) DPDT Analog Switch

SGM7227 High Speed USB 2.0 (480Mbps) DPDT Analog Switch GENERAL DECRIPTION The GM7227 is a high-speed, low-power double-pole/ double-throw (DPDT) analog switch that operates from a single 1.8V to 4.3V power supply. GM7227 is designed for the switching of high-speed

More information

Quad SPST CMOS Analog Switch

Quad SPST CMOS Analog Switch Quad PT CMO Analog witch HI-201/883 The HI-201/883 is a monolithic device comprised of four independently selectable PT switchers which feature fast switching speeds (185ns typical) combined with low power

More information

Improved, SPST/SPDT Analog Switches

Improved, SPST/SPDT Analog Switches 9-0; Rev 2; 2/96 Improved, PT/PT nalog witches General escription Maxim s redesigned G7/G/G9 precision, CMO, monolithic analog switches now feature guaranteed on-resistance matching (3Ω max) between switches

More information

DG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

DG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT 9-728; Rev ; 9/0 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (Ω max) and guaranteed on-resistance flatness over the signal

More information

Precision, 16-Channel/Dual 8-Channel, Low-Voltage, CMOS Analog Multiplexers

Precision, 16-Channel/Dual 8-Channel, Low-Voltage, CMOS Analog Multiplexers / Precision, 6-Channel/Dual 8-Channel, General Description The / low-voltage, CMOS analog multiplexers (muxes) offer low on-resistance (Ω max), which is matched to within 6Ω between switches and remains

More information

LOW HIGH OFF ON. Maxim Integrated Products 1

LOW HIGH OFF ON. Maxim Integrated Products 1 9-79; Rev ; /07 Low-Voltage, Quad, SPST General Description The MAX0/MAX/MAX are quad, low-voltage, single-pole/single-throw (SPST) analog switches. On-resistance (00Ω, max) is matched between switches

More information

2Ω, Quad, SPST, CMOS Analog Switches

2Ω, Quad, SPST, CMOS Analog Switches 9-73; Rev ; 4/ 2Ω, Quad, SPST, CMOS Analog Switches General Description The // quad analog switches feature.6ω max on-resistance (R ) when operating from a dual ±5V supply. R is matched between channels

More information

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers 8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers Low On-Resistance r S(on) : Low Charge Injection Q: pc Fast Transition Time t TRANS : 6 ns Low Power I SUPPLY : A Single Supply Capability 44-V Supply

More information

PS381/PS383/PS385. Precision, 17V Analog Switches. Features. Applications. Functional Diagrams, Pin Configurations, and Truth Tables

PS381/PS383/PS385. Precision, 17V Analog Switches. Features. Applications. Functional Diagrams, Pin Configurations, and Truth Tables 79797979797979797979797979 Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single Supply (+V to

More information

Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers

Precision, 8-Channel/Dual 4-Channel, High-Performance, CMOS Analog Multiplexers 9-027; Rev 2; 8/02 Precision, 8-Channel/Dual 4-Channel, General Description The / precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than 0Ω), which is matched to within

More information

SGM48753 CMOS Analog Switch

SGM48753 CMOS Analog Switch GENERAL DESCRIPTION The is a CMOS analog IC configured as three single-pole/double-throw (SPDT) switches. This CMOS device can operate from 2.5V to 5.5V single supplies. Each switch can handle rail-to-rail

More information

I2 C Compatible Digital Potentiometers AD5241/AD5242

I2 C Compatible Digital Potentiometers AD5241/AD5242 a Preliminary Technical ata FEATURES Position Potentiometer Replacement 0K, 00K, M, Ohm Internal Power ON Mid-Scale Preset +. to +.V Single-Supply; ±.V ual-supply Operation I C Compatible Interface APPLICATIONS

More information

DG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS

DG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS G2707 High Speed, Low Voltage, 3, ifferential 4:1 CMOS Analog Multiplexer/Switch ESCRIPTION The G2707 is a high speed, low voltage, 3, differential 4:1 multiplexer. It operates from a 1.65 V to 4.3 V single

More information

IRFD A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet July File Number 2315.

IRFD A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet July File Number 2315. IRF1 ata heet July 1999 File Number 31.3 1.3A, 1V,.3 Ohm, N-Channel Power MOFET This advanced power MOFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche

More information

Features. Functional Diagrams, Pin Configurations, and Truth Tables

Features. Functional Diagrams, Pin Configurations, and Truth Tables Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single-Supply Operation (+.V to +1V) Improved

More information

DG417/418/419. Precision CMOS Analog Switches. Features Benefits Applications. Description. Functional Block Diagram and Pin Configuration

DG417/418/419. Precision CMOS Analog Switches. Features Benefits Applications. Description. Functional Block Diagram and Pin Configuration G417/418/419 Precision MO Analog witches Features Benefits Applications 1-V Analog ignal Range On-Resistance r (on) : 2 Fast witching Action t ON : 1 ns Ultra Low Power Requirements P :3 nw TTL and MO

More information

Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches Quad PT MO Analog witches Low On-Resistance: Low Leakage: 8 pa Low Power onsumption:.2 mw Fast witching Action t ON : 1 ns Low harge Injection Q: 1 p G21A/G22 Upgrades TTL/MO-ompatible Logic ingle upply

More information

IN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT

IN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT 9-4728; Rev 7; 9/08 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (3Ω max) and guaranteed on-resistance flatness over the

More information

Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers with Latchable Inputs

Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers with Latchable Inputs 9-396; Rev. ; 5/95 Low-Voltage, 8-Channel/Dual 4-Channel General Description The are low-voltage, CMOS, -of-8 and dual 4-channel muxes with latchable digital inputs. They feature low-voltage operation

More information

Low-Leakage, CMOS Analog Multiplexers

Low-Leakage, CMOS Analog Multiplexers / General Description The / are monolithic, CMOS analog multiplexers (muxes). The 8-channel is designed to connect one of eight inputs to a common output by control of a 3-bit binary address. The dual,

More information

MAX4638/MAX Ω, Single 8:1 and Dual 4:1, Low-Voltage Analog Multiplexers

MAX4638/MAX Ω, Single 8:1 and Dual 4:1, Low-Voltage Analog Multiplexers General Description The / are single : and dual : CMOS analog multiplexers/demultiplexers (muxes/ demuxes). Each mux operates from a single +.V to +V supply or dual ±.V supplies. These devices feature.ω

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers Precision 8-Ch/ual 4-Ch Low Voltage Analog Multiplexers ESCRIPTION The G948, G949 uses BiCMOS wafer fabrication technology that allows the G948, G949 to operate on single and dual supplies. Single supply

More information

Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches Quad PT MO Analog witches ERIPTION The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function.

More information

3.5Ω (max) at +3V PART. MAX4733EUA -40 C to +85 C 8 µmax MAX4732. Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW (BUMPS ON BOTTOM) NC1

3.5Ω (max) at +3V PART. MAX4733EUA -40 C to +85 C 8 µmax MAX4732. Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW (BUMPS ON BOTTOM) NC1 9-264; Rev 2 2/6 Ω, Dual SPST Analog Switches in UCSP General Description The MAX473// low-voltage, dual, single-pole/single-throw (SPST) analog switches operate from a single +2V to +V supply and handle

More information

Low Drift, Low Power Instrumentation Amplifier AD621

Low Drift, Low Power Instrumentation Amplifier AD621 a FEATURES EASY TO USE Pin-Strappable Gains of 0 and 00 All Errors Specified for Total System Performance Higher Performance than Discrete In Amp Designs Available in -Lead DIP and SOIC Low Power,.3 ma

More information

35Ω, Low-Voltage, SPST/SPDT Analog Switches in UCSP Package

35Ω, Low-Voltage, SPST/SPDT Analog Switches in UCSP Package 19-1994; Rev 3; 2/3 35, Low-Voltage, SPST/SPDT General Description The low on-resistance (R ON ), low-voltage analog switches operate from a single +2.V to +5.5V supply. The / are single-pole/single-throw

More information

High Speed Quad SPST CMOS Analog Switch

High Speed Quad SPST CMOS Analog Switch High Speed Quad SPST CMOS Analog Switch HI-21HS/883 The HI-21HS/883 is a monolithic CMOS analog switch featuring very fast switching speeds and low ON resistance. This integrated circuit consists of four

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

MAX14753 V DD INA0 INA1 INA2 INA3 OUT INB0 INB1 INB2 INB3

MAX14753 V DD INA0 INA1 INA2 INA3 OUT INB0 INB1 INB2 INB3 19-4255; Rev 3; 7/10 8-Channel/Dual 4-Channel General Description The are 8-to-1 and dual 4-to-1 high-voltage analog multiplexers. Both devices feature 60Ω (typ) on-resistance with 0.03Ω (typ) on-resistance

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition

More information

Low-Power, High-Speed CMOS Analog Switches

Low-Power, High-Speed CMOS Analog Switches New Product G1B/3B/5B Low-Power, High-peed MO Analog witches FEATURE BENEFIT APPLIATION 44-V upply Max Rating 15-V Analog ignal Range On-Resistance r (on) : 23 Low Leakage I (on) : pa Fast witching t ON

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

COM COM GND MAX4644 OFF OFF

COM COM GND MAX4644 OFF OFF 9-7; Rev ; / High-Speed, Low-Voltage, 4, General Description The is a single-pole/double-throw (SPDT) switch that operates from a single supply ranging from +.V to +.V. It provides low 4 on-resistance

More information

8-CHANNEL MULTIPLEXER DESCRIPTION: FEATURES: SEi 338RP

8-CHANNEL MULTIPLEXER DESCRIPTION: FEATURES: SEi 338RP A0 1 16 A1 V+ V- GND EN V- NO1 NO2 NO3 SEi 338RP A2 GND V+ NO5 NO6 NO1 NO2 NO3 NO4 NO5 NO6 NO7 NO8 COM NO4 NO7 CMOS DECODE LOGIC COM 8 9 NO8 A2 A1A0 EN FEATURES: DESCRIPTION: RAD-PAK Technology hardened

More information

Precision CMOS Analog Switches

Precision CMOS Analog Switches Precision MO Analog witches G417, G418, G419 ERIPTION The G417, G418, G419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages,

More information

IH5341, IH5352. Dual SPST, Quad SPST CMOS RF/Video Switches. Description. Features. Ordering Information. Applications. Pinouts.

IH5341, IH5352. Dual SPST, Quad SPST CMOS RF/Video Switches. Description. Features. Ordering Information. Applications. Pinouts. SEMICONDUCTOR IH, IH2 December Features Description Dual SPST, Quad SPST CMOS RF/Video Switches R DS(ON) < Ω Switch Attenuation Varies Less Than db From DC to 00MHz "OFF" Isolation > 0dB Typical at 0MHz

More information

N-Channel 20-V (D-S) Fast Switching MOSFET

N-Channel 20-V (D-S) Fast Switching MOSFET N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:

More information

3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers

3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers G948E, G949E 3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers ESCRIPTION The G948E, G949E uses BiCMOS wafer fabrication technology that allows the G948E, G949E

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R

More information

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: +SCOPE: TTL COMPATIBLE CMOS ANALOG SWITCHES Device Type Generic Number 0 DG300A(x)/883B 02 DG30A(x)/883B 03 DG302A(x)/883B 04 DG303A(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-835

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI

More information

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS REVISIONS LTR DESCRIPTION DTE PPROVED Prepared in accordance with SME Y14.24 Vendor item drawing REV PGE REV PGE REV STTUS OF PGES REV PGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PMIC N/ PREPRED BY RICK OFFICER

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g

More information

Pin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1

Pin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR 0 INPUT. Maxim Integrated Products 1 9-; Rev ; / Low-Voltage, Single-Supply General Description The are precision, dual analog switches designed to operate from a single +.7V to +V supply. Low power consumption (µw) makes these parts ideal

More information

IRF9530, RF1S9530SM. 12A, 100V, Ohm, P-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging

IRF9530, RF1S9530SM. 12A, 100V, Ohm, P-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging IRF953, RF1953M 12A, 1V,.3 Ohm, P-Channel Power MOFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced

More information

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118. Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,

More information

Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers

Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers 9-27; Rev 3; 3/ Precision, 6-Channel/Dual 8-Channel, General Description The MA36/MA37 precision, monolithic, CMOS analog multiplexers (muxes) offer low on-resistance (less than Ω), which is matched to

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION

More information

P-Channel 2.5 V (G-S) MOSFET

P-Channel 2.5 V (G-S) MOSFET i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology

More information

AOZ Ω Low-Voltage Dual-DPDT Analog Switch

AOZ Ω Low-Voltage Dual-DPDT Analog Switch 0.3Ω Low-Voltage Dual-DPDT nalog witch General Description The OZ6274 is a dual Double-Pole, Double-Throw (DPDT) analog switch that is designed to operate from a single 1.65V to 4.3V supply. The OZ6274

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching

More information

Pin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1

Pin Configurations/Functional Diagrams/Truth Tables IN V+ GND SOT23-6* MAX4544 ON OFF OFF ON SWITCHES SHOWN FOR 0 INPUT. Maxim Integrated Products 1 9-; Rev ; / Low-Voltage, Single-Supply General Description The MAX MAX are precision, dual analog switches designed to operate from a single +.V to +V supply. Low power consumption (µw) makes these parts

More information

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236 0.35 Ω Low-Voltage Dual PDT nalog witch General Description The OZ6236 is a 0.35 Ω low-voltage Dual ingle Pole Double Throw (PDT) analog switch. The OZ6236 operates from a single 1.65 V to 4.3 V supply.

More information

Monolithic CMOS Analog Multiplexers

Monolithic CMOS Analog Multiplexers 19-008; Rev 3; 9/01 Monolithic CMOS Analog Multiplexers General escription Maxim s and are monolithic CMOS analog multiplexers (muxes): the is a single 8-channel (1-of-8) mux, and the is a differential

More information

SGM Ω, High Speed, Low Voltage Analog Switch/Multiplexer

SGM Ω, High Speed, Low Voltage Analog Switch/Multiplexer .5Ω, High Speed, Low Voltage nalog Switch/Multiplexer GENERL DESCRIPTION The SGM4782 is high-speed, low-voltage, low on-resistance, CMOS analog multiplexer/switch that configured as two 4-channel multiplexers.

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I

More information

Description. For Fairchild s definition of Eco Status, please visit:

Description. For Fairchild s definition of Eco Status, please visit: FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant

More information

ON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC

ON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC 9-88; Rev ; /7 25Ω SPST Analog Switches in SOT23-6 General Description The are dual-supply single-pole/single-throw (SPST) switches. On-resistance is 25Ω max and flat (2Ω max) over the specified signal

More information

NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary)

NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) September 1999 Revised November 1999 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary) General Description The is a high performance, Analog Switch 2- channel CMOS

More information

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.

More information

N-Channel 30-V (D-S) MOSFET with Schottky Diode

N-Channel 30-V (D-S) MOSFET with Schottky Diode New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @

More information

MAX4636EUB -40 C to +85 C 10 µmax 1 NO1 IN1 GND. 3 x 3 THIN QFN OFF ON ON OFF SWITCHES SHOWN FOR "0" INPUT. Maxim Integrated Products 1

MAX4636EUB -40 C to +85 C 10 µmax 1 NO1 IN1 GND. 3 x 3 THIN QFN OFF ON ON OFF SWITCHES SHOWN FOR 0 INPUT. Maxim Integrated Products 1 9-79; Rev ; /3 Fast, Low-Voltage, Dual 4 SPDT General Description The are fast, dual 4 singlepole/double-throw (SPDT) analog switches that operate with supply voltages from +.8V to +.V. High switching

More information

N-Channel 250 V (D-S) MOSFET

N-Channel 250 V (D-S) MOSFET N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration

More information

SGM Ω, High Speed, Low Voltage Analog Switch/Multiplexer

SGM Ω, High Speed, Low Voltage Analog Switch/Multiplexer GENERL DESCRIPTION The SGM84782 is high-speed, low-voltage, low on-resistance, CMOS analog multiplexer/switch that configured as two 4-channel multiplexers. It operates from a single +1.8V to +4.2V power

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

N-Channel 25 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration

More information