RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603. Parameters / Test Conditions Symbol Value Unit. I D Adc

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1 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (T C = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage V DS 200 Gate Source Voltage V GS ± 20 Continuous Drain Current T C = +25 C I D Adc Continuous Drain Current T C = +100 C I D Adc Max. Power Dissipation P tl 150 (1) W Drain to Source On State Resistance R ds(on) (2) Operating & Storage Temperature T op, T stg -55 to +150 C Note: (1) Derated Linearly by 1.2 W/ C for T C > +25 C (2) V GS = 12, I D = 16.0A PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted) TO-254AA JANSR2N7269, JANSF2N7269 See Figure 1 Drain-Source Breakdown Voltage V GS = 0V, I D = 1mAdc Gate-Source Voltage (Threshold) V DS V GS, I D = 1.0mA V DS V GS, I D = 1.0mA, T j = +125 C V DS V GS, I D = 1.0mA, T j = -55 C V (BR)DSS 200 V GS(th)2 V GS(th) Gate Current V GS = ±20V, V DS = 0V V GS = ±20V, V DS = 0V, T j = +125 C I GSS1 I GSS2 ±100 ±200 nadc Drain Current V GS = 0V, V DS = 160V V GS = 0V, V DS = 200V, T j = +125 C V GS = 0V, V DS = 160V, T j = +125 C I DSS1 I DSS2 I DSS µadc madc madc U-PKG (SMD-1) (TO-267AB) JANSR2N7269U, JANSF2N7269U See Figure 2 Static Drain-Source On-State Resistance V GS = 12V, I D = 16.0A pulsed V GS = 12V, I D = 26.0A pulsed T j = +125 C V GS = 12V, I D = 16.0A pulsed r DS(on)1 r DS(on)2 r DS(on) Diode Forward Voltage V GS = 0V, I D = 26.0A pulsed V SD 1.4 7T4-LDS-0122 Rev. 2 (101017) Page 1 of 5

2 DYNAMIC CHARACTERISTICS Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS V GS = 12V, I D = 26.0A V DS = 100V Q g(on) Q gs Q gd nc Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time I D = 26.0A, V GS = 12, Gate drive impedance = 2.35, V DD = 50 t d(on) t r t d(off) t f 33 ns Diode Reverse Recovery Time di/dt 100A/µs, V DD 30V, I F = 26.0A t rr 820 ns POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (T A = +25 C, unless otherwise noted) Drain-Source Breakdown Voltage V GS = 0V, I D = 1mAdc V (BR)DSS 200 Gate-Source Voltage (Threshold) V DS V GS, I D = 1.0mA MSR V DS V GS, I D = 1.0mA MSF Gate Current V GS = ±20V, V DS = 0V I GSS1 ±100 nadc Drain Current V GS = 0V, V DS = 160V MSR V GS = 0V, V DS = 160V MSF Static Drain-Source On-State Voltage V GS = 12V, I D = 16.0A pulsed MSR V GS = 12V, I D = 16.0A pulsed MSF I DSS V DS(on) µadc Diode Forward Voltage V GS = 0V, I D = 26.0A pulsed V SD 1.4 NOTE: (3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in accordance with MIL-STD-750 Method Separate samples are tested for VGS bias (12V), and VDS bias (160V) conditions. 7T4-LDS-0122 Rev. 2 (101017) Page 2 of 5

3 Single Event Effect (SEE) Characteristics: Heavy Ion testing of the 2N7269 device was completed by similarity of die structure to the 2N7262. The 2N7262 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown: 2N7269 (2N7262) TAMU Ar LET=8.3 Range =192um Total Energy=531MeV Drain Bias, V TAMU Kr LET=27.8 Range =134um Total Energy=1032MeV TAMU Ag LET=42.2 Range =119um Total Energy=1289MeV TAMU Au LET=85.4 Range =118um Total Energy=2247MeV Gate Bias, V It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. 7T4-LDS-0122 Rev. 2 (101017) Page 3 of 5

4 TECHNICAL DATA SHEET Figure 1: Case Outline and Pin Configuration for JANSR2N7269 & JANSF2N7269 7T4-LDS-0122 Rev. 2 (101017) Page 4 of 5

5 TECHNICAL DATA SHEET NOTES: Dimensions 1. Dimensions are in inches. Symbol SMD-1 2. Millimeters are given for general information only. Inches Millimeters 3. The lid shall be electrically isolated from the drain, gate and Min Max Min Max source. BL In accordance with ASME Y14.5M, diameters are equivalent to BW φx symbology. CH LH LL LL LS BSC 5.33 BSC LS BSC 2.67 BSC LW LW Q Q Term 1 Drain Term 2 Gate Term 3 Source Figure 2: Case Outline and Pin Configuration for JANSR2N7269U & JANSF2N7269U 7T4-LDS-0122 Rev. 2 (101017) Page 5 of 5