N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542

Transcription

1 ,, and Available on commercial versio N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DESCRIPTION This family of,, and switching traistors are military qualified up to the JANTXV level for high-reliability applicatio. Microsemi also offers numerous other traistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Qualified Levels: JAN, JANTX, and JANTXV Important: For the latest information, visit our website FEATURES JEDEC registered,, and number series. JAN, JANTX, and JANTXV qualificatio are available per MIL-PRF-19500/542. (See part nomenclature for all available optio.) RoHS compliant versio available (commercial grade only). TO-204AA (TO-3) Package Low-profile metal can design. Military and other high-reliability applicatio. APPLICATIONS / BENEFITS MAXIMUM T A = +25ºC unless otherwise stated Parameters / Test Conditio Symbol Value Unit Operating & Storage Junction Temperature Range T J & T stg -55 to +150 C Thermal Resistance Junction-to-Case R ӨJC 1.67 o C/W Total Power T A = +25 T C = +25 C (1) Drain-Source Voltage, dc P T V DS Gate-Source Voltage, dc V GS ± 20 V Drain Current, T C = +25 ºC (2) I D1 A Drain Current, T C = +100 ºC (2) Off-State Current (Peak Total Value) (3) Source Current Notes featured on next page I D I DM I S W V A A A MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 1 of 9

2 ,, and NOTES: 1. Derated linearly by 0.6 W/ºC for T C > +25 ºC. 2. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is available on commercial grade only. MARKING: Manufacturer's ID, part number, date code. WEIGHT: Approximately 12.7 grams. See Package Dimeio on last page. PART NOMENCLATURE JAN (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt I D I F R G T C V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Drain current Forward current Gate drive impedance Case Temperature Drain supply voltage Drain source voltage Gate source voltage T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 2 of 9

3 ,, and ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditio Symbol Min. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = 1.0 ma Gate-Source Voltage (Threshold) V DS V GS, I D = 0.25 ma V DS V GS, I D = 0.25 ma, T J = +125 C V DS V GS, I D = 0.25 ma, T J = -55 C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 C Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V V GS = 0 V, V DS = 400 V Drain Current V GS = 0 V, V DS = 100 V, T J = +125 C V GS = 0 V, V DS = 200 V, T J = +125 C V GS = 0 V, V DS = 400 V, T J = +125 C V GS = 0 V, V DS = 500 V, T J = +125 C Drain Current V GS = 0 V, V DS = 80 V, T J = +125 C V GS = 0 V, V DS = 160 V, T J = +125 C V GS = 0 V, V DS = 320 V, T J = +125 C V GS = 0 V, V DS = 400 V, T J = +125 C Static Drain-Source On-State Resistance V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 3.0 A pulsed Static Drain-Source On-State Resistance V GS = 10 V, I D = 14.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 5.5 A pulsed V GS = 10 V, I D = 4.5 A pulsed Static Drain-Source On-State Resistance T J = +125 C V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 6.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 3.0 A pulsed Diode Forward Voltage V GS = 0 V, I D = 14.0 A pulsed V GS = 0 V, I D = 9.0 A pulsed V GS = 0 V, I D = 5.5 A pulsed V GS = 0 V, I D = 4.5 A pulsed V (BR)DSS V GS(th)1 V GS(th)2 V GS(th)3 I GSS1 I GSS ±100 ±200 V V na I DSS1 25 µa I DSS2 1.0 ma I DSS ma r DS(on)1 r DS(on)2 r DS(on)3 V SD Ω Ω Ω V T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 3 of 9

4 ,, and ELECTRICAL T A = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditio Symbol Min. Max. Unit Gate Charge: On-State Gate Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V Gate to Source Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V Gate to Drain Charge V GS = 10 V, I D = 14.0 A, V DS = 80 V V GS = 10 V, I D = 9.0 A, V DS = 160 V V GS = 10 V, I D = 5.5 A, V DS = 320 V V GS = 10 V, I D = 4.5 A, V DS = 400 V Q g(on) Q gs Q gd nc nc nc SWITCHING CHARACTERISTICS Parameters / Test Conditio Symbol Min. Max. Unit Turn-on delay time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Rie time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Turn-off delay time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Fall time I D = 14.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 50 V I D = 9.0 A, V GS = +10 V, R G = 7.5 Ω, V DD = 100 V I D = 5.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 200 V I D = 4.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 250 V Diode Reverse Recovery Time di/dt = 100 A/µs, V DD 30 V, I D = 14.0 A di/dt = 100 A/µs, V DD 30 V, I D = 9.0 A di/dt = 100 A/µs, V DD 30 V, I D = 5.5 A di/dt = 100 A/µs, V DD 30 V, I D = 4.5 A t d(on) t r t d(off) t f t rr T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 4 of 9

5 ,, and GRAPHS Thermal Respoe (ZθJC) t 1, Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Respoe Curves T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 5 of 9

6 ,, and GRAPHS (continued) FIGURE 2 Maximum Drain Current vs Case Temperature T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 6 of 9

7 ,, and GRAPHS (continued) FIGURE 3 Safe Operating Area V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 7 of 9

8 ,, and GRAPHS (continued) FIGURE 3 Safe Operating Area V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 8 of 9

9 ,, and PACKAGE DIMENSIONS NOTE: INCHES MILLIMETERS 1. Dimeio are in inches. DIM NOTES MIN MAX MIN MAX 2. Millimeters are given for general information only. A These dimeio should be measured at points.050 B inch (1.27 mm) and.055 inch (1.40 mm) below C seating plane. When gauge is not used measurement D will be made at the seating plane. D The seating plane of the header shall be flat within E DIA..001 inch (0.03 mm) concave to.004 inch (0.10 mm) convex iide a.930 inch (23.62 mm) diameter circle on the center of the header and flat within.001 inch (0.03 mm) concave to.006 inch (0.15 mm) convex overall. F G H J K Radius 3, 5 3, 5 5. Mounting holes shall be deburred on the seating L Radius plane side. M DIA. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SCHEMATIC T4-LDS-0111, Rev. 3 (121465) 2012 Microsemi Corporation Page 9 of 9