N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

Transcription

1 ,, & Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a thru hole TO-254AA package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website FEATURES Surface mount equivalent of JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number series. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592. (See part nomenclature for all available options.) RoHS compliant by design. Low-profile design. Military and other high-reliability applications. APPLICATIONS / BENEFITS MAXIMUM T A = +25 ºC unless otherwise stated Parameters / Test Conditions Symbol Value Unit Operating & Storage Junction Temperature Range T J & T stg -55 to +150 C Thermal Resistance Junction-to-Case R ӨJC 0.83 o C/W Total Power T A = +25 C T C = +25 C (1) P T 150 W Gate-Source Voltage, dc V GS ± 20 V Drain Current, T C = +25 ºC (2) I D A 12.0 Drain Current, T C = +100 ºC (2) Off-State Current (Peak Total Value) (3) Source Current I D I DM I S A A (pk) NOTES: 1. Derated linearly by 1.2 W/ºC for T C > +25 ºC. 2. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. A U (SMD-1 or TO-267AB) Package Also available in: TO-254AA package (leaded) 2N7224 & 2N7228 MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 1 of 9

2 ,, & CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Part number, date code, A = anode. WEIGHT: 0.9 grams. See Package Dimensions on last page. MECHANICAL and PACKAGING PART NOMENCLATURE JAN 2N7224 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial SMD Surface Mount Package JEDEC type number (see Electrical Characteristics table) Symbol di/dt I F R G V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 2 of 9

3 ,, & ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = 1.0 ma Gate-Source Voltage (Threshold) V DS V GS, I D = 0.25 ma V DS V GS, I D = 0.25 ma, T J = +125 C V DS V GS, I D = 0.25 ma, T J = -55 C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 C Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V V GS = 0 V, V DS = 400 V Drain Current V GS = 0 V, V DS = 80 V, T J = +125 C V GS = 0 V, V DS = 160 V, T J = +125 C V GS = 0 V, V DS = 320 V, T J = +125 C V GS = 0 V, V DS = 400 V, T J = +125 C Static Drain-Source On-State Resistance V GS = 10 V, I D = 21.0 A pulsed V GS = 10 V, I D = 17.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 8.0 A pulsed Static Drain-Source On-State Resistance V GS = 10 V, I D = 34.0 A pulsed V GS = 10 V, I D = 27.4 A pulsed V GS = 10 V, I D = 14.0 A pulsed V GS = 10 V, I D = 12.0 A pulsed Static Drain-Source On-State Resistance T J = +125 C V GS = 10 V, I D = 21.0 A pulsed V GS = 10 V, I D = 17.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 8.0 A pulsed Diode Forward Voltage V GS = 0 V, I D = 34.0 A pulsed V GS = 0 V, I D = 27.4 A pulsed V GS = 0 V, I D = 14.0 A pulsed V GS = 0 V, I D = 12.0 A pulsed V (BR)DSS V GS(th)1 V GS(th)2 V GS(th)3 I GSS1 I GSS ±100 ±200 V V na I DSS1 25 µa I DSS ma r DS(on)1 r DS(on)2 r DS(on)3 V SD Ω Ω Ω V T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 3 of 9

4 ,, & ELECTRICAL T A = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge V GS = 10 V, I D = 34.0 A, V DS = 50 V V GS = 10 V, I D = 27.4 A, V DS = 50 V V GS = 10 V, I D = 14.0 A, V DS = 50 V V GS = 10 V, I D = 12.0 A, V DS = 50 V Gate to Source Charge V GS = 10 V, I D = 34.0 A, V DS = 50 V V GS = 10 V, I D = 27.4 A, V DS = 50 V V GS = 10 V, I D = 14.0 A, V DS = 50 V V GS = 10 V, I D = 12.0 A, V DS = 50 V Gate to Drain Charge V GS = 10 V, I D = 34.0 A, V DS = 50 V V GS = 10 V, I D = 27.4 A, V DS = 50 V V GS = 10 V, I D = 14.0 A, V DS = 50 V V GS = 10 V, I D = 12.0 A, V DS = 50 V Q g(on) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = 34.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 50 V I D = 27.4 A, V GS = 10 V, R G = 2.35 Ω, V DD = 100 V I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 200 V I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 250 V Rinse time I D = 34.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 50 V I D = 27.4 A, V GS = 10 V, R G = 2.35 Ω, V DD = 100 V I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 200 V I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 250 V Turn-off delay time I D = 34.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 50 V I D = 27.4 A, V GS = 10 V, R G = 2.35 Ω, V DD = 100 V I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 200 V I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 250 V Fall time I D = 34.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 50 V I D = 27.4 A, V GS = 10 V, R G = 2.35 Ω, V DD = 100 V I D = 14.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 200 V I D = 12.0 A, V GS = 10 V, R G = 2.35 Ω, V DD = 250 V Diode Reverse Recovery Time di/dt 100 A/µs, V DD 30 V, I F = 34.0 A di/dt 100 A/µs, V DD 30 V, I F = 27.4 A di/dt 100 A/µs, V DD 30 V, I F = 14.0 A di/dt 100 A/µs, V DD 30 V, I F = 12.0 A Q gs Q gd nc nc nc t d(on) 35 ns t r 190 ns t d(off) 170 ns t f 130 ns t rr ns T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 4 of 9

5 ,, & GRAPHS Thermal Response (ZθJC) t 1, Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Impedance Curves T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 5 of 9

6 ,, & GRAPHS (continued) FIGURE 2 Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 6 of 9

7 ,, & GRAPHS (continued) FIGURE 3 Maximum Safe Operating Area V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 7 of 9

8 ,, & GRAPHS (continued) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 8 of 9

9 ,, & PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Symbol DIMENSIONS INCH MILLIMETERS Min Max Min Max BL BW CH LH LL LL LS1.210 BSC 5.33 BSC LS2.105 BSC 2.67 BSC LW LW Q Q Term 1 Drain Term 2 Gate Term 3 Source T4-LDS , Rev. 1 (121485) 2012 Microsemi Corporation Page 9 of 9