NTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
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1 NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified NB25P6 These Devices are PbFree and are RoHS Compliant (BR)DSS R DS(on) TYP I D AX Typical Applications PW otor Controls Power Supplies Converters Bridge Circuits 6 65 PChannel D 27.5 A AXIU RATINGS ( unless otherwise noted) Rating Symbol alue Unit DraintoSource oltage DSS 6 GatetoSource oltage Continuous NonRepetitive (t p ms) Drain Current T A = 25 C Single Pulse (t p s) GS GS 5 2 I D 27.5 I D 8 Total Power T A = 25 C P D 2 W Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting ( DD = 25, GS =, I L(pk) = 2 A, L = 3 mh, R G = 25 ) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note 2) aximum Lead Temperature for Soldering Purposes, (/8 from case for s) T J, T stg 55 to +75 pk A Apk C E AS 6 mj R JC R JA R JA C/W T L 26 C Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. When surface mounted to an FR board using pad size (Cu Area.27 in 2 ). 2. When surface mounted to an FR board using the minimum recommended pad size (Cu Area.2 in 2 ). 2 3 D 2 PAK CASE 8B A Y WW G G ARKING DIAGRA & PIN ASSIGNENT = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORATION Device Package Shipping NTB25P6TG NB25P6TG Gate D 2 PAK (PbFree) Drain NTB 25P6G AYWW Drain Source 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. S D 2 PAK (PbFree) 8 / Tape & Reel Semiconductor Components Industries, LLC, 2 October, 2 Rev. Publication Order Number: NTB25P6/D
2 NTB25P6, NB25P6 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol in Typ ax Unit OFF CHARACTERISTICS DraintoSource Breakdown oltage (Note 3) ( GS =, I D = 25 A) (Positive Temperature Coefficient) Zero Gate oltage Drain Current ( GS =, DS = 6, ) ( GS =, DS = 6,, T J = 5 C) (BR)DSS GateBody Leakage Current ( GS = ± 5, DS = ) I GSS ± na I DSS 6 6 m/ C A ON CHARACTERISTICS (Note 3) Gate Threshold oltage ( DS = GS, I D = 25 A) (Negative Threshold Temperature Coefficient) Static DrainSource OnState Resistance ( GS =, I D = 2.5 A) ( GS =, I D = 25 A) Forward Transconductance ( DS =, I D = 2.5 A) GS(th) 2. R DS(on) gfs m/ C hos DYNAIC CHARACTERISTICS Input Capacitance C iss 2 68 pf Output Capacitance ( DS = 25, GS =, F =. Hz) C oss 35 8 Reverse Transfer Capacitance C rss 9 8 SWITCHING CHARACTERISTICS (Notes 3 & ) TurnOn Delay Time t d(on) 2 ns Rise Time ( DD = 3, I D = 25 A, t r 72 8 ns TurnOff Delay Time GS = R G = 9. ) t d(off) 3 68 ns Fall Time t f 9 32 ns Gate Charge ( DS = 8, I D = 25 A, GS = ) Q T 33 5 nc Q 6.5 Q 2 5 BODYDRAIN DIODE RATINGS (Note 3) Diode Forward Onoltage (I S = 25 A, GS = ) (I S = 25 A, GS =, T J = 5 C) SD Reverse Recovery Time (I S = 25 A, GS =, di S /dt = A/ s) t rr 7 ns t a 5 t b 2 Reverse Recovery Stored Charge Q RR.2 C 3. Indicates Pulse Test: Pulse Width 3 s, Duty Cycle 2%.. Switching characteristics are independent of operating junction temperatures. 2
3 NTB25P6, NB25P6 I D, DRAIN CURRENT (APS) GS = DS, DRAINTOSOURCE OLTAGE (OLTS) I D, DRAIN CURRENT (APS) DS T J = 55 C T J = 25 C GS, GATETOSOURCE OLTAGE (OLTS) Figure. OnRegion Characteristics Figure 2. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ) GS = T J = 25 C T J = 55 C I D, DRAIN CURRENT (APS) R DS(on), DRAINTOSOURCE RESISTANCE ( ) GS =.75 GS = I D, DRAIN CURRENT (APS) Figure 3. OnResistance vs. Drain Current and Temperature Figure. OnResistance vs. Drain Current and Gate oltage R DS(on), DRAINTOSOURCE RESISTANCE (NORALIZED) I D = 25 A GS = T J, JUNCTION TEPERATURE ( C) Figure 5. OnResistance ariation with Temperature 5 I DSS, LEAKAGE (na) GS = T J = 5 C T J = 25 C DS, DRAINTOSOURCE OLTAGE (OLTS) Figure 6. DraintoSource Leakage Current vs. oltage 3
4 NTB25P6, NB25P6 C, CAPACITANCE (pf) t, TIE (ns) GS = DS = C iss C rss 5 GS DS GATETOSOURCE OR DRAINTOSOURCE OLTAGE (OLTS) Figure 7. Capacitance ariation t r t f t d(off) t d(on) C rss R G, GATE RESISTANCE ( ) C iss C oss GS, GATETOSOURCE OLTAGE (OLTS) I S, SOURCE CURRENT (APS) Q g, TOTAL GATE CHARGE (nc) DD = 3 5 I D = 25 A GS = DS Q Figure 8. GatetoSource and DraintoSource oltage vs. Total Charge GS = Q 2 Q T GS I D = 25 A 3 35 SD, SOURCETODRAIN OLTAGE (OLTS) Figure 9. Resistive Switching Time ariation vs. Gate Resistance Figure. Diode Forward oltage vs. Current I D, DRAIN CURRENT (APS) GS = 2 SINGLE PULSE T C = 25 C dc ms ms s DS, DRAINTOSOURCE OLTAGE (OLTS) Figure. aximum Rated Forward Biased Safe Operating Area E AS, SINGLE PULSE DRAINTOSOURCE AALANCHE ENERGY (mj) I D = 25 A R DS(on) Limit Thermal Limit Package Limit T J, STARTING JUNCTION TEPERATURE ( C) Figure 2. aximum Avalanche Energy vs. Starting Junction Temperature
5 NTB25P6, NB25P6 PACKAGE DIENSIONS T SEATING PLANE B 2 3 G S D 3 PL.3 (.5) T B K C H D 2 PAK 3 CASE 8B ISSUE K A E W J W NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y.5, CONTROLLING DIENSION: INCH. 3. 8B THRU 8B3 OBSOLETE, NEW STANDARD 8B. INCHES ILLIETERS DI IN AX IN AX A B C D E F G. BSC 2.5 BSC H J K L N.97 REF 5. REF P.79 REF 2. REF R.39 REF.99 REF S ARIABLE CONFIGURATION ZONE R N U P L L L F F F IEW WW IEW WW IEW WW 2 3 SOLDERING FOOTPRINT* X 3.5 2X PITCH DIENSIONS: ILLIETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. 5
6 NTB25P6, NB25P6 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORATION LITERATURE FULFILLENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, iddle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTB25P6/D
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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