MC1403, B. Low Voltage Reference PRECISION LOW VOLTAGE REFERENCE
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1 Low Voltage Reference A precision bandgap voltage reference designed for critical instrumentation and D/A converter applications. This unit is designed to work with D/A converters, up to bits in accuracy, or as a reference for power supply applications. Output Voltage:. V mv Input Voltage Range:. V to 0 V Quiescent Current:. ma Typical Output Current: 0 ma Temperature Coefficient: 0 ppm/ C Typical Guaranteed Temperature Drift Specification Equivalent to AD0 Standard Pin DIP, and Pin SOIC Package Typical Applications Voltage Reference for to Bit D/A Converters Low T C Zener Replacement High Stability Current Reference Voltmeter System Reference PbFree Package is Available MAXIMUM RATINGS (T A = C, unless otherwise noted.) Rating Symbol Value Unit Input Voltage V I 0 V Storage Temperature T stg to 0 C Junction Temperature T J + C Operating Ambient Temperature Range MC0B MC0 T A 0 to + 0 to + 0 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. C C PRECISION LOW VOLTAGE REFEREE V out GND PDIP P SUFFIX CASE SOIC D SUFFIX CASE PIN CONNECTIONS V in ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 00 March, 00 Rev. Publication Order Number: MC0/D
2 +.0 V MC0. V.0 k R R Full Scale Adjust 00 I Ref Reference Amplifier Monolithic D/A Converter *0. F C. k R Figure. A Reference for Monolithic D/A Converters * Caution: System stability may be affected if output capacitance * exceeds.0 F. Using higher capacitance values is not * recommended and should be carefully considered. Providing the Reference Current for ON Semiconductor Monolithic D/A Converters The MC0 makes an ideal reference for many monolithic D/A converters, requiring a stable current reference of nominally.0 ma. This can be easily obtained from the MC0 with the addition of a series resistor, R. A variable resistor, R, is recommended to provide means for full scale adjust on the D/A converter. The resistor R improves temperature performance by matching the impedance on both inputs of the D/A reference amplifier. The capacitor decouples any noise present on the reference line. It is essential if the D/A converter is located any appreciable distance from the reference. A single MC0 reference can provide the required current input for up to five of the monolithic D/A converters. ELECTRICAL CHARACTERISTICS (V in = V, T A = C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Output Voltage V out... V (I O = 0 ma) Temperature Coefficient of Output Voltage* V O / T 0 0 ppm/ C MC0 Output Voltage Change* V O mv (Over specified temperature range) MC0B 0 to +0 C.0 MC0B 0 to + C. Line Regulation (I O = 0 ma) Reg line mv ( V V I 0 V) (. V V I V) Load Regulation Reg load 0 mv (0 ma < I O < 0 ma) Quiescent Current I Q.. ma (I O = 0 ma) *Guaranteed but not tested.
3 V in.0 k.0 k.0 k.0 k.0 k V out. k. k. k C 0 pf 0 k. k.0 k. k This device contains active transistors. Figure. Schematic
4 V, CHANGE IN Vout (mv) out C 0 C C V in, INPUT VOLTAGE (V) Figure. Typical Change in V out versus V in (Normalized to V in = T C = C) V out, CHANGE IN OUTPUT VOLTAGE (mv) C C C I out, OUTPUT CURRENT (ma) Figure. Change in Output Voltage versus Load Current (Normalized to V V in = V, I out = 0 ma) I, QUIESCENT CURRENT (ma) V, CHANGE IN Vout (mv) out T A, TEMPERATURE ( C) T A, TEMPERATURE ( C) Figure. Quiescent Current versus Temperature (V in = V, I out = 0 ma) V in = V V in =.0 V I out = ma Figure. Change in V out versus Temperature (Normalized to V V in = V).0 V, CHANGE IN Vout (mv) out I O = 0 ma =.0 ma =.0 ma =.0 ma T A, TEMPERATURE ( C) Figure. Change in V out versus Temperature (Normalized to T A = C, V in = V, I out = 0 ma)
5 /Digit Voltmeter Common Anode Displays, Flashing Overrange An example of a /digit voltmeter using the MC is shown in the circuit diagram of Figure. The reference voltage for the system uses an MC0. V reference IC. The full scale potentiometer can calibrate for a full scale of 99.9 mv or.999 V. When switching from.0 V to 00 mv operation, R I is also changed, as shown on the diagram. When using R C equal to 00 k, the clock frequency for the system is about khz. The resulting conversion time is approximately 0 ms. When the input is overrange, the display flashes on and off. The flashing rate is onehalf the conversion rate. This is done by dividing the EOC pulse rate by with / MC0B flipflop and blanking the display using the blanking input of the MCB. The display uses an LED display with common anode digit lines driven with an MCB decoder and an MC LED driver. The MC contains Darlington transistor drivers and resistors to drive the segments of the display. The digit drive is provided by four MPSA Darlington transistors operating in an emitterfollower configuration. The MCB, MC0B and LED displays are referenced to V EE via Pin of the MC. This places the full power supply voltage across the display. The current for the display may be adjusted by the value of the segment resistors shown as 0 in Figure. +.0 V 0. F V X MC0 0. F R I * 0. F ** 00 k R C 0 k 0 MC 0. F V.0 V.0 V 0. F 9 0 MCB +.0 V +.0 V MC 0 Segment Resistors 0 () 0. F 9 DS 9 DS DS DS.0 V.0 V.0 V D C S Q Q R.0 V MC0B.0 V k +.0 V Minus Sign 00 MPSA Plus Sign 0 Common Anode LED Display f g e d c b a * R I = 0 k for.0 V Range R I = k for 00 mv Range ** Mylar Capacitor.0 V 9 D S C R 0 Q Q +.0 V 0 F.0 V 0. F MPSA () Figure. /Digit Voltmeter
6 ORDERING INFORMATION Device Package Operating Temperature Range Shipping MC0D SOIC 9 Units/Rail MC0DG SOIC (PbFree) 9 Units/Rail MC0DR SOIC 00 Tape/Reel MC0DRG SOIC T A = 0 to +0 C 00 Tape/Reel (PbFree) MC0P PDIP 000 Units/Rail MC0PG PDIP (PbFree) 000 Units/Tubes MC0BD SOIC 9 Units/Rail MC0BDG SOIC (PbFree) 9 Units/Rail MC0BDR SOIC T A = 0 to + C 00 Tape/Reel MC0BP MC0BPG PDIP PDIP (PbFree) 000 Units/Rail 000 Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD0/D.
7 PACKAGE DIMENSIONS PDIP P SUFFIX CASE 0 ISSUE L NOTES:. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).. DIMENSIONING AND TOLERAING PER ANSI Y.M, 9.
8 PACKAGE DIMENSIONS X B Y A S 0. (0.00) M Y M SOIC D SUFFIX CASE 0 ISSUE AE K NOTES:. DIMENSIONING AND TOLERAING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A AND B DO NOT ILUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION 0. (0.00) PER SIDE.. DIMENSION D DOES NOT ILUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0. (0.00) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.. 0 THRU 0 ARE OBSOLETE. NEW STANDARD IS 0. Z H G D C 0. (0.00) M Z Y S X S SEATING PLANE 0.0 (0.00) N X M J MILLIMETERS IHES DIM MIN MAX MIN MAX A B C D G. BSC 0.00 BSC H J K M 0 0 N S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, af
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NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
MC14070B, MC14077B CMOS SSI. Quad Exclusive OR and NOR Gates
C070B, C077B COS SSI Quad Exclusive OR and NOR Gates The C070B quad exclusive OR gate and the C077B quad exclusive NOR gate are constructed with OS Pchannel and Nchannel enhancement mode devices in a single
MC74VHC132. Quad 2 Input NAND Schmitt Trigger
MC74HC32 Quad 2 Input NAND Schmitt Trigger The MC74HC32 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
MC74VHC14. Hex Schmitt Inverter
MC74HC4 Hex Schmitt Inverter The MC74HC4 is an advanced high speed CMOS Schmitt inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
FACT DATA 5-1 DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP
The MC112/T112 consists of o high-speed completely independent transition clocked flip-flops. The clocking operation is independent of rise and fall times of the clock waveform. The design allows operation
FACT DATA 5-1 DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP
The MC113/T113 consists of o high-speed completely independent transition clocked flip-flops. The clocking operation is independent of rise and fall times of the clock waveform. The design allows operation
2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
NL17SZ08. Single 2-Input AND Gate
N7SZ08 Single 2-Input AND Gate The N7SZ08 is a single 2 input AND Gate in two tiny footprint packages. The device performs much as CX multi gate products in speed and drive. They should be used wherever
MC74HC138A. 1-of-8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
MC74HC38A -of-8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The MC74HC38A is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors,
NCP ma, Tri-Mode, LDO Linear Voltage Regulator
3 ma, Tri-Mode, LDO Linear Voltage Regulator The NCP4589 is a CMOS 3 ma LDO which switches to a low power mode under light current loads. The device automatically switches back to a fast response mode
MC74LCX74. Low-Voltage CMOS Dual D-Type Flip-Flop. With 5 V Tolerant Inputs
Low-oltage CMOS Dual D-Type Flip-Flop With 5 Tolerant Inputs The MC74LCX74 is a high performance, dual D type flip flop with asynchronous clear and set inputs and complementary (O, O) outputs. It operates
NTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V
Power MOSFET.9 Amps, Volts NChannel TSSOP Features New Low Profile TSSOP Package Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery
SN74LS175MEL. Quad D Flip Flop LOW POWER SCHOTTKY
uad Flip Flop The LSTTL/MSI SN74LS75 is a high speed uad Flip-Flop. The device is useful for general flip-flop requirements where clock and clear inputs are common. The information on the inputs is stored
MC74HCT138A. 1 of 8 Decoder/ Demultiplexer with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer with LSTTL Compatible Inputs High Performance Silicon Gate CMOS The MC74HCT38A is identical in pinout to the LS38. The HCT38A may be used as a level converter for interfacing
MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators
MC0A, MC0A, NCV0A. A, StepUp/Down/ Inverting Switching Regulators The MC0A Series is a monolithic control circuit containing the primary functions required for DCtoDC converters. These devices consist
74HCT32. Quad 2 Input OR Gate with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
Quad 2 Input OR Gate with STT Compatible Inputs igh Performance Silicon Gate CMOS The 74CT32 is identical in pinout to the S32. The device has TT compatible inputs. Features Output Drive Capability: 0
MC10E163, MC100E163. 5VНECL 2-Bit 8:1 Multiplexer
5VНECL 2-Bit 8:1 Multiplexer Description The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs (SEL0, 1, 2) control which one of the eight
74FST Bit, 4 Port Bus Exchange Switch
4 Bit, 4 Port Bus Exchange Switch The ON Semiconductor 74FST3400 is a 4 bit, 4 port bus exchange switch. The device is CMOS TTL compatible when operating between 4.0 and 5.5 Volts. The device exhibits
NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
NL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
SN74LS166MEL. 8 Bit Shift Registers LOW POWER SCHOTTKY
8 Bit Shift Registers The SN74S166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 74S standard load. By utilizing input clamping diodes, switching