Multichannel Optocoupler with Phototransistor Output
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1 CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated circuits, non-interacting switches Features Emitter Coll. Coll. Emitter CNY74-2H includes 2 isolater channels CNY74-4H includes 4 isolater channels Isolation test voltage V IO = 5 kv Test class 25//21 DIN 4 45 Low coupling capacitance of typical.3 pf Current Transfer Ratio (CTR) of typical % Low temperature coefficient of CTR Wide ambient temperature range Underwriters Laboratory (UL) 1577 recognized, file number E Anode Cath. Cath. 8 PIN Anode 16 PIN CSA (C UL) 1577 recognized, file number E Double Protection Coupling System U C Order Instruction Ordering Code CTR Ranking Remarks CNY74 2H 5 to 6% 8 Pin = Dual channel CNY74 4H 5 to 6% 16 Pin = Quad channel
2 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current 1s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current /T =.5, 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 4 to + C Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN 514
3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector dark current V CE = 2 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit DC isolation test voltage t = 2 s V 1) IO 5 kv Isolation resistance V IO = V, R 1) IO % relative humidity Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c khz R L = Coupling capacitance f = 1 MHz C k.3 pf 1) Related to standard climate 23/5 DIN 514 Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma CTR V CE = 5 V, I F = 1 ma CTR.6 1.2
4 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, IC = 2 ma, RL = (see figure 1) t d 3. s Rise time t r 3. s Fall time t f 4.7 s Storage time t s.3 s Turn-on time t on 6. s Turn-off time t off 5. s Turn-on time V S = 5 V, IF = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s I F R G = 5 I F + 5 V I C = 2 ma ; Adjusted through input amplitude I F T =.1 = 5 s Channel I Oscilloscope t Channel II R L = 1 M C L = 2 pf I C % 9% Figure 1. Test circuit, non-saturated operation I F I F = 1 ma + 5 V I C 1% t d t r t s t f t R G = 5 T.1 t on t off = 5 s Channel I Oscilloscope t d t r t on (= t d + t r ) pulse duration delay time rise time turn-on time t s t f t off (= t s + t f ) storage time fall time turn-off time k Channel II R L 1 M C L 2 pf Figure 3. Switching times Figure 2. Test circuit, saturated operation
5 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage I F Forward Current ( ma ) Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =5mA T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 75 I C Collector Current ( ma ) I F =5mA mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage
6 V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5% 1 1 1% 2% I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k I F Forward Current ( ma ) Figure 12. Turn on / off Time vs. Forward Current t off t on 2 CTR Current Transfer Ratio ( % ) V CE =5V I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) Figure 13. Turn on / off Time vs. Collector Current 1
7 Type XXXXXXXX Date Code (YM) 82 U TFK Pin 1 Indication Coupling System Indicator Company Logo Production Location Figure 14. Marking example Dimensions of CNY74 2 in mm weight: ca..55 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14784
8 Dimensions of CNY74 4 in mm weight: ca. 1. g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14783
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
CNY7-, CNY7-3, CNY7-2, CNY7-4 Phototransistor Optocouplers Features CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized (File # E90700) VDE recognized 02497
OP550, OP552, OP555, OP560, OP565, OP750 Series
OP552 Features: Wide receiving angle Four sensitivity ranges Sidelooking package Ideal for spacelimited applications Ideal for PCBoard mounting Choice of clear, opaque or bluetinted package OP550 OP5 OP750
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband
DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION The CNY7 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. FEATURES CNY7-/2/3 are also available in white package by specifying -M suffix (eg. CNY7-2-M) UL recognized
DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
Converter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBPW34FAS VBPW34FASR 21726 VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5
PNP power transistor
FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ67W NPN 8 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 99 FEATURES PINNING High power gain Low noise figure High transition frequency Gold metallization ensures excellent
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
DISCRETE SEMICONDUCTORS DATA SHEET. BFG541 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFG4 File under Discrete Semiconductors, SC4 September 99 BFG4 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
absolute maximum ratings at 25 C case temperature (unless otherwise noted)
,, B, C, D Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D W at C Case Temperature A Continuous Collector Current Minimum h FE of 70 at 3, 6 A B C E SOT-93 PACKAGE (TOP IEW)