K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.
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1 Optocoupler with Phototransistor Output K817P/ K827PH/ K847PH Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications Features Coll. Emitter Endstackable to 2.54 mm (.1 ) spacing DC isolation test voltage V IO = 5 kv Low coupling capacitance of typical.3 pf Current Transfer Ratio (CTR) selected into groups Low temperature coefficient of CTR Wide ambient temperature range Underwriters Laboratory (UL) 1577 recognized, file number E CSA (C UL) 1577 recognized, file number E Double Protection Coupling System U Anode Cath. 4 PIN 8 PIN C 16 PIN Order Instruction Ordering Code CTR Ranking Remarks K817P 5 to 6% 4 Pin = Single channel K827PH 5 to 6% 8 Pin = Dual channel K847PH 5 to 6% 16 Pin = Quad channel K817P1 4 to 8% 4 Pin = Single channel K817P2 63 to 125% 4 Pin = Single channel K817P3 to 2% 4 Pin = Single channel K817P4 16 to 32% 4 Pin = Single channel K817P5 5 to 15% 4 Pin = Single channel K817P6 to 3% 4 Pin = Single channel K817P7 8 to 16% 4 Pin = Single channel K827P8 13 to 26% 4 Pin = Single channel K817P9 2 to 4% 4 Pin = Single channel Rev. A2, 11 Jan
2 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current 1 s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current /T =.5, 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kv Total power dissipation T amb 25C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN Rev. A2, 11 Jan 99
3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = A V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector dark current V CE = 2 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency I F = 1 ma, V CE = 5 V, f c khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma K817P CTR.5 6. V CE = 5 V, I F = 5 ma K827PH CTR.5 6. V CE = 5 V, I F = 5 ma K847PH CTR.5 6. V CE = 5 V, I F = 1 ma K817P1 CTR.4.8 V CE = 5 V, I F = 1 ma K817P2 CTR V CE = 5 V, I F = 1 ma K817P3 CTR V CE = 5 V, I F = 1 ma K817P4 CTR V CE = 5 V, I F = 5 ma K817P5 CTR V CE = 5 V, I F = 5 ma K817P6 CTR V CE = 5 V, I F = 5 ma K817P7 CTR V CE = 5 V, I F = 5 ma K817P8 CTR V CE = 5 V, I F = 5 ma K817P9 CTR Rev. A2, 11 Jan
4 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, RL = (see figure 1) t d 3. s Rise time t r 3. s Fall time t f 4.7 s Storage time t s.3 s Turn-on time t on 6. s Turn-off time t off 5. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s I F I F + 5 V I C = 2 ma ; Adjusted through input amplitude R G = 5 T =.1 = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I F I C t Figure 1. Test circuit, non-saturated operation % 9% I F I F = 1 ma + 5 V I C 1% t r t R G = 5 t d t s t f T.1 = 5 s k Channel I Channel II Oscilloscope R L 1 M C L 2 pf t on pulse dura- tion t d t r t on (= t d + t r ) delay time rise time turn-on time t off t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 2. Test circuit, saturated operation Figure 3. Switching times 18 Rev. A2, 11 Jan 99
5 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ) I C Collector Current ( ma ) V CE =5V V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage I F Forward Current ( ma ) Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =5mA T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 75 I C Collector Current ( ma ) I F =5mA mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A2, 11 Jan
6 V CEsat Collector Emitter Saturation Voltage ( V ) CTR=5% 1 1 1% 2% I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k I F Forward Current ( ma ) Figure 12. Turn on / off Time vs. Forward Current t off t on 2 CTR Current Transfer Ratio ( % ) V CE =5V I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) Figure 13. Turn on / off Time vs. Collector Current 1 Pin 1 Indication Type K817P 82UTK63 Date Code (YM) 158 Coupling System Company Logo Production Location Indicator Figure 14. Marking example 182 Rev. A2, 11 Jan 99
7 Dimensions of K817P. in mm weight: ca..25 g creepage distance: 6 mm air path: 6 mm after mounting on PC board Dimensions of K827PH in mm weight: creepage distance: air path: ca..55 g 6 mm 6 mm after mounting on PC board Rev. A2, 11 Jan
8 Dimensions of K847PH in mm weight: ca. 1. g creepage distance: 6 mm air path: 6 mm after mounting on PC board Rev. A2, 11 Jan 99
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