SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS
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- Magnus Gibson
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1 SP3022 Series 0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ES. These robust diodes can safely absorb repetitive ES strikes above the maximum level specified in IEC international standard without performance degradation. The back-toback configuration provides symmetrical ES protection for data lines when AC signals are present and the low loading capacitance makes it ideal for protecting high speed data lines such as HMI,USB2.0, USB3.0 and esata. Pinout Features 0201 Flipchip SO882 RoHS compliant and leadfree ES protection of ±20kV contact discharge, ±30kV air discharge, (IEC EFT, IEC , 40A (5/50ns IEC , 2nd Edition: 8/20 Surge, 3A Surge Low capacitance of V R =0V (TYP Low leakage current of 100nA at 5.3V (MAX Space efficient 0201 and SO882 footprint Extremely low dynamic resistance (0.7Ω TYP AEC-Q101 qualified (SO882 package (AEC-Q101 qualified Functional Block iagram Applications USB 3.0/USB 2.0/MHL MIPI Camera and isplay HMI 2.0, isplayport 1.3, esata Set Top Boxes, Game Consoles Smart Phones External Storage Ultrabooks, Notebooks Tablets, ereaders Automotive Electronics Additional Information atasheet Resources Samples Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
2 Absolute Maximum Ratings Symbol Parameter Value Units P PK Peak Pulse Power (t P =8/20µs 20 W I PP Peak Current (t p =8/20μs 3.0 A T OP Operating Temperature -40 to 125 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC SP3021 Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 5.3 V Reverse Breakdown Voltage V BR 1 R =1mA V Reverse Leakage Current I LEAK V R =5.3V < na Clamp Voltage 1 V C I PP =1A, t p =8/20µs, Fwd 12.0 V ynamic Resistance 2 R YN TLP, tp=100ns, I/O to GN 0.7 Ω ES Withstand Voltage 1 V ES IEC (Contact ±20 kv IEC (Air ±30 kv iode Capacitance 1 C Reverse Bias=0V pf Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP with 100ns width and 200ps rise time. 8/20 Pulse Waveform Transmission Line Pulsing(TLP Plot Percent of I PP 110% 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% Time (μs TLP Current (A TLP Voltage (V
3 Temperature TVS iode Arrays (SPA iodes Clamping Voltage vs I PP Capacitance vs. Reverse Bias Clamp Voltage (VC Capacitance (pf Peak Pulse Current-I PP (A Bias Voltage (V Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min 150 C - Temperature Max (T s(max 200 C Pb Free assembly - Time (min to max (t s secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate Reflow - Temperature (T L (Liquidus 217 C 3 C/second max 3 C/second max - Temperature (t L seconds Peak Temperature (T P /-5 C Time within 5 C of actual peak Temperature (t p Ramp-down Rate Time 25 C to peak Temperature (T P o not exceed 260 C seconds 6 C/second max 8 minutes Max. T P T L T S(max T S(min 25 t S Preheat Ramp-up time to peak temperature Product Characteristics of 0201 Flipchip Lead Plating Lead Material Lead Coplanarity Substrate material Body Material Sn Copper 6µm(max t P t L Ramp-down Time Critical Zone TL to TP Product Characteristics of SO882 Lead Plating Lead Material Substrate material Body Material Flammability Pre-Plated Frame Copper Alloy Molded Compound UL Recognized compound meeting flammability rating V-0. Notes : 1. All dimensions are in millimeters 2. imensions include solder plating. 3. imensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VI
4 Ordering Information Part Number Package Marking Min. Order Qty. Packaging Option P0/P1 Packaging Specification SP WTG 0201 Flipchip Tape & Reel 8mm tape/7 reel 4mm/2mm EIA RS-481 SP ETG SO Tape & Reel 8mm tape/7 reel 4mm/2mm EIA RS-481 Part Numbering System Part Marking System SP x T G TVS iode Arrays (SPA iodes G= Green T= Tape & Reel Series SP WTG SP ETG Number of Channels Package W: 0201 Flipchip E: SO882 Package imensions 0201 Flipchip A 0201 Flipchip B F 0.30 Symbol Millimeters Inches Min Typ Max Min Typ Max E A B C C *Sizes in mm E F G Recommended Solder Pad Footprint G Package imensions SO882 Package SO882 Symbol JEEC Millimeters MO-236 Inches Min Typ Max Min Typ Max A B C E F Recommended Soldering Pad Layout
5 Embossed Carrier Tape & Reel Specification 0201 Flipchip P1 P0 W T P2 1 E F Symbol Millimeters A /-0.03 B /-0.03 ø ø / E 1.75+/-0.10 F 3.50+/-0.05 K /-0.03 P /-0.10 P.00+/-0.05 P /-0.05 W T 0.23+/-0.02 A0 K0 B0 Embossed Carrier Tape & Reel Specification SO882 Symbol Millimeters A / B / K / F 3.50+/-0.05 P.00+/-0.10 W
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AOZ8231A. One-line Bi-directional TVS Diode. Features. General Description. Applications
One-line Bi-directional TVS Diode General Description The AOZ8231A is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient
IS2805 DESCRIPTION FEATURES
DESCRIPTION The is an optically coupled isolator consists of two infrared emitting diodes in reverse parallel connection and optically coupled to an NPN silicon photo transistor. This device belongs to
MOC205-M MOC206-M MOC207-M MOC208-M
DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
Small Signal Zener Diodes, Dual
Small Signal Zener Diodes, Dual DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS 6 PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current Circuit configuration Dual
High Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00
BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw
Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23
Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel
YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
Gas Discharge Tube (GDT) Data Sheet
Gas Discharge Tube (GDT) Data Sheet Features Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-rising surge of 1KV/μs. Stable breakdown voltage. High insulation resistance.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A
New Product V3000C, VF3000C, VB3000C & VI3000C Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.56 V at I F = 5 A TMBS TO0AB ITO0AB 3 3 V3000C VF3000C CASE TO63AB TO6AA 3 VB3000C
LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6
5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage regulation with minimum space requirement.
RS INDUSTRY LIMITED. RS Chip Single ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D
APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: Part Name RS INDUSTRY LIMITED Chip ESD Part No. RS 0402-5V500S Lot No. PART
PHOTOTRANSISTOR OPTOCOUPLERS
MCT MCTE MCT0 MCT7 MCT00 MCT0 MCT0 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCTXXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon
Spezifikation für Freigabe / specification for release
Artikelnummer / part number : 82541300 Datum / Date : 31.07.06 description : HIGH SURGE 1206 SMD VARISTOR Lead Free SMD size: 1206 ROHS Compliant A Mechanische Abmessungen / dimensions : SIZE SIZE W L
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection
MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide
P-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
EV Series 1.5 Amp Sensitive SCRs. Description. Features. Surge capability > 15Amps Blocking voltage (V DRM / V RRM.
Sx02xS Series RoHS Description New mp sensitive gate SR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SR s junctions are glasspassivated to
Qxx15xx & Qxx16xHx Series
Teccor brand Thyristors Description 15 mp and 16 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,