SP1008 Series 6pF 15kV Bidirectional Discrete TVS
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1 TVS iode Arrays (SPA Family of Products 6pF 15kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ES. These robust diodes can safely absorb repetitive ES strikes above the maximum level specified in the IEC international standard (±15kV contact discharge without performance degradation. The back-to-back configuration provides symmetrical ES protection for data lines when AC signals are present. SP1008 Pinout Features 1 2 ES, IEC , ±15kV contact, ±15kV air EFT, IEC , 40A (5/50ns Lightning, IEC , 2.5A (t P =8/20μs Low capacitance of 6pF (@ V R =5V Low leakage current of 0.1μA at 5V Space efficient 0201 footprint Note: rawing not to scale Applications Mobile Phones MP3/PMP Portable Medical Camcorders Smart Phones ereaders/ebooks Tablets igital Cameras Functional Block iagram Application Example Keypads I/O Controller 1 2 P1 P2 P3 P4 IC X X X X SP1008 (x4 GN Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1
2 TVS iode Arrays (SPA Family of Products Absolute Maximum Ratings Symbol Parameter Value Units Peak Current (t p =8/20μs 2.5 A T OP Operating Temperature -40 to 85 C T STOR Storage Temperature -65 to 150 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -65 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s 260 C Electrical Characteristics (T OP =25ºC Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM 6.0 V Breakdown Voltage V BR I R =1mA V Leakage Current I LEAK V R =5V with 1 pin at GN 0.1 μa Clamp Voltage 1 V C =1A, t p =8/20µs, Fwd 10.7 V =2A, t p =8/20µs, Fwd 12.0 V ynamic Resistance R YN (V C2 - V C1 / ( Ω ES Withstand Voltage 1 V ES IEC (Contact ischarge ±15 kv IEC (Air ischarge ±15 kv iode Capacitance 1 C Reverse Bias=0V 9 pf Reverse Bias=5.0V 6 9 pf Note: 1 Parameter is guaranteed by design and/or device characterization. 2
3 I/O Capacitance (pf Temperature TVS iode Arrays (SPA Family of Products Capacitance vs. Reverse Bias Insertion Loss (S21 I/O to GN Attenuation (db I/O Bias Voltage (V Frequency (MHz SP1008 Pulse Waveform Clamping Voltage vs. Percent of 110% 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% Clamp Voltage (V C % Time (μs Peak Pulse Current- (A 2.5 Soldering Parameters Reflow Condition - Temperature Min (T s(min 150 C Pb Free assembly T P Ramp-up t P Critical Zone TL to TP Pre Heat - Temperature Max (T s(max 200 C - Time (min to max (t s secs Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate 3 C/second max 3 C/second max T L T S(max T S(min t S Preheat t L Ramp-down Reflow - Temperature (T L (Liquidus 217 C - Temperature (t L seconds 25 time to peak temperature Time Peak Temperature (T P /-5 C Time within 5 C of actual peak Temperature (t p seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P 8 minutes Max. o not exceed 260 C 3
4 TVS iode Arrays (SPA Family of Products Part Numbering System SP W T G Silicon Protection Array (SPA TM Family of TVS iode Arrays G= Green T= Tape & Reel Ordering Information Part Number Package Marking Min. Order Qty. SP WTG 0201 Flipchip X Series Number of Channels Package W: 0201 Flipchip Part Marking System x Package imensions 0201 Flip Chip 0201 Flipchip A Symbol Millimeters Inches Min Typ Max Min Typ Max A B F C B C E G E F G Embossed Carrier Tape & Reel Specification 0201 Flipchip P1 P2 P0 E 0.30 Symbol Millimeters A /-0.03 B /-0.03 W F 0.28 ø ø / E 1.75+/ F 3.50+/-0.05 K /-0.03 T *Sizes in mm P /-0.05 P /-0.05 P /-0.10 A0 K0 B0 Recommended Solder Pad Footprint W T 0.23+/
5 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Littelfuse: SP WTG
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Description. For Fairchild s definition of Eco Status, please visit:
FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)
First Sensor APD Array Data Sheet Part Description 64AA SMD Order #
Responsivity (A/W) First Sensor APD Array Data Sheet Features Description Application RoHS 64 element APD array High QE >8% for λ = 7-91 nm High speed, low noise High uniformity, low cross talk Absolute
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical
Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction
Low Voltage 2-1 Mux, Level Translator ADG3232
Low Voltage 2-1 Mux, Level Translator ADG3232 FEATURES Operates from 1.65 V to 3.6 V Supply Rails Unidirectional Signal Path, Bidirectional Level Translation Tiny 8-Lead SOT-23 Package Short Circuit Protection
Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
Teccor brand Thyristors Silicon Controlled Rectifiers
Description New device series offers high static dv/dt and lower turn off (t q ) sensitive SCR with its small die planar construction SCRs junctions are glass-passivated to ensure long term reliability
H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M
PACKAGE OUTLINE SCHEMATIC 6 6 HAVS-M, HAV2S-M 6 HAV-M, HAV2-M 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 5 4 6 HAVA-M, HAV2A-M DESCRIPTION The general purpose optocouplers
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching
Package TO Symbol Parameter Value Unit Test Conditions Note. V GS =20 V, T C = 25 C Fig. 19 A 60 V GS =20 V, T C = 100 C.
V DS 2 V C2M252D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 9 A 25 mω High Blocking Voltage with Low On-Resistance High Speed
Received. Revised record
Received MASS PRODUCTION PRELIMINARY CUSTOMER DESIGN DEVICE NO. : DHE-0000991 PAGE : 12 Revised record REV. DESCRIPTION RELEASE DATE 1 New spec 2011.03.09 2 Change Format 2011.03.31 3 1. Change Color Binning
BS0060N-2C. Order Code: B006N2C. Exterior. Features. Agency Approvals. Schematic Symbol. Part SMB-T. Weight:88mg Non degenerative. Video.
eatures xterior xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: level 1 Weight:88mg