DATA SHEET THYRISTOR SURGE SUPPRESSORS MODEMS/LINE CARD PXXXXSX series

SIDACtor Protection Thyristors Broadband Optimized TM Protection. TwinChip Series - DO-214. Description

TwinChip Series - DO-214 RoHS Pb e3 Description TwinChip Series DO-214 are very low capacitance SIDACtor thyristors designed to protect broadband equipment such as VoIP, DSL modems and DSLAMs from damaging

Gas Discharge Tube (GDT) Data Sheet

Gas Discharge Tube (GDT) Data Sheet Features Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-rising surge of 1KV/μs. Stable breakdown voltage. High insulation resistance.

Fixed Voltage Q2L Series 3.3x3.3 QFN

RoHS Pb e3 Fixed Voltage Q2L Series are uni-directional SIDACtor devices designed to protect SLICs (Subscriber Line Interface Circuit from damaging overvoltage transients. The series provides single line

JIEJIE MICROELECTRONICS CO., Ltd

JIJI MICROLCTRONICS CO., Ltd CPxxxxSA Series TSS Rev.4.3 DSCRIPTION: CPxxxxSA series thyristors are a type of semiconduct component.they are designed in applications, such as modems, telephones, line cards,

The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram

ESD5451R 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451R is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to

Super High AUTO (SHA) Series

PART NO. SFI1206SA240-1R5J 1.1 Technology Data Symbol Value Unit Maximum allowable continuous DC voltage V DC 12 V Breakdown voltage measured Vv 24(±10%) V Maximum clamping voltage V CLAMP < 40 V Maximum

TEA10402V15A0 Engineering Specification

TEA10402V15A0 Engineering 1. Scope This specification is applied to electrostatic discharge (ESD) protection. It is designed to protect the high-speed data lines against ESD transients. It has very low

Exterior MAX MAX MAX MIN MAX BS0060N-C-F

Features Excellent capability of absorbing transient surge Quick response to surge voltage(ns Level) Eliminates overvoltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight:

Exterior. cathode. V BR min.(v) V R (V)

Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 3000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB

Exterior. V BR min.(v) V R (V)

Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 5000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB

SP1008 Series 6pF 15kV Bidirectional Discrete TVS

TVS iode Arrays (SPA Family of Products 6pF 15kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP1008 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology

Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 40 C 1.5 A I T(AV) Average on-state current T C

TCR22-x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current

Exterior. cathode V R V BR (V) min.(v)

Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 400Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior SMA Application

Teccor brand Thyristors 1.5 Amp Sensitive SCRs

Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by

Thyristors 6 Amp Sensitive & Standard SCRs. Sxx06xSx & Sxx06x Series

Sxx06xSx & Sxx06x Series RoHS Description This Sxx06x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive

SP1064 Series 8.5pF, 15 kv Diode Array

SP1064 Series 8.5pF, 15 kv Diode Array Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)

SP4042 Series 3.3V Diode Array RoHS Pb GREEN

SP4042 Series 3.3V Diode rray RoHS Pb GREEN Description The SP4042 integrates low capacitance steering diodes with a TVS diode to provide 2 channels of protection against lightning induced surge events

Surface Mount ESD Capability Rectifiers

Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.

2 Input NAND Gate L74VHC1G00

Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic

TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

Copyright 997, Power Innovations Limited, UK TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage

Specification of V-PORT XXXX-X-V05 Series

1 Scope Specification of V-PORT-0402 -XXXX-X-V05 Series This specification is applied to ESD and EMI protection for I/O port, for example, VGA, US etc. The customer designed part number drawing take precedence

AQ3041 Series 0.5pF 20kV Unidirectional Discrete TVS

AQ304 Series 0.5pF 20kV Unidirectional Discrete TVS RoHS Pb GREEN Description The AQ304 includes low capacitance rail to rail diodes with an additional Zener diode to provide protection for electronic

Spezifikation für Freigabe / specification for release

Artikelnummer / part number : 82541300 Datum / Date : 31.07.06 description : HIGH SURGE 1206 SMD VARISTOR Lead Free SMD size: 1206 ROHS Compliant A Mechanische Abmessungen / dimensions : SIZE SIZE W L

Metal Oxide Varistor:TVM-B Series

Features. RoHS & Halogen Free (HF) compliant. EIA size: 040 ~ 0 3. Operating voltage: 5.5Vdc ~ 85Vdc 4. High surge suppress capability 5. Bidirectional and symmetrical V/I characteristics 6. Multilayer

High Power MicroClamp 1-Line ESD and Surge Protection

µclamp61p - µclamp661p High Power MicroClamp 1-Line ESD and Surge Protection PROTECTION PRODUCTS Description µclamp TVS diodes are designed to protect sensitive electronics from damage or latch-up due

SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

SP3022 Series 0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The SP3022 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for

SP3022 Series 0.35pF 20kV Bidirectional Discrete TVS

Series 0.35pF 20kV Bidirectional iscrete TVS RoHS Pb GREEN escription The includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

SPECIFICATION FOR APPROVAL INDEX

SPECIFICATION FOR APPROVAL INDEX COVER PAGE INDEX. 0 SCOPE...1 EXPLANATION OF PART NUMBER 1 CIRCUIT DIAGRAM & DIMENSION...1 SPECIFICATION..... 2-3 TAPING PACKAGE AND LABEL MARKING 4-5 PRECAUTIONS FOR HANDLING.....6-8

Photocoupler Product Data Sheet LTV-100X-G series datasheet Spec No.: DS Effective Date: 11/03/2016 LITE-ON DCC RELEASE

Product Data Sheet LTV-100X-G series datasheet Spec No.: DS70-2013-0012 Effective Date: 11/03/2016 Revision: G LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

SDP Biased Series - SOT23-6

SDP Biased Series - SOT23-6 RoHS Description Features & Benefits Agency Approvals Agency Agency File Number Pinout Designation & Schematic Symbol (30MHz Applicable Global Standards 1 6 2 5 P =8/20μs 3

Teccor brand Thyristors 65 / 70 Amp Standard SCRs

Sxx65x & Sxx70x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes

High-Voltage Schottky Rectifier

High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability

V V I H. T Part Number Marking

Phillip Havens Oct 2008 SIDCtor Protection Thyristors SDP Biased Series - 5x6 QN RoHS Pb e3 Description This new SDP Biased series provides overvoltage protection for applications such as VDSL2, DSL2,

AOZ8212ACI-05. Two-line Bi-directional TVS Diode. General Description. Features. Applications

Two-line Bi-directional TVS Diode General Description The is a two-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions

CNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards

Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The

CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET

Solid State Relay OCMOS FET PS7341C-1A,PS7341CL-1A CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7341C-1A and PS7341CL-1A are solid state relays containing

RS INDUSTRY LIMITED. RS Chip Array ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D

APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: RS INDUSTRY LIMITED Part Name ARRAY TYPE MULTILAYER VARISTOR Part No. RS

Silicon PIN Photodiode

Silicon PIN Photodiode DESCRIPTION VBPW34FAS VBPW34FASR 21726 VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5

Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 90 C 55 A I T(AV) Average on-state current T C

Sxx55x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes

Teccor brand Thyristors 0.8 Amp Sensitive SCRs

Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

AOZ Ultra Low Capacitance One-line Bi-directional TVS Diode. Features. General Description. Applications. Signal Line

Ultra Low Capacitance One-line Bi-directional TVS Diode General Description The is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data

Display Surface-mount ELSS-406SURWA/S530-A3/S290

Features Industrial standard size. Packaged in tape and reel for SMT manufacturing. The thickness is thinness than tradition display. Low power consumption. Categorized for luminous intensity. Pb free

Recommended Land Pattern: [mm]

Dimensions: [mm] Recommended Land Pattern: [mm] Absolute Maximum Ratings (Ambient Temperature 25 C): Properties Test conditions Value Unit (Reverse) Peak Pulse Current t p = 8/20µs I Peak 4 A 1 3,4 1,6

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward

RoHS compliant & Halogen Free

Product Specification DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CHIP VARISTORS S0402/0603 5.5 V TO 38 V RoHS compliant & Halogen Free 2 SCOPE This specification describes chip varistors with lead-free

30 to 35 ma G. Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 80 C 20 A I T(AV)

Sxx20x & Sxx25x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes

RS INDUSTRY LIMITED. RS Chip Single ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D

APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: Part Name RS INDUSTRY LIMITED Chip ESD Part No. RS 0402-5V500S Lot No. PART

Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package

TCMT11. Series Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package 22628-1 C E 4 3 1 2 DESCRIPTION The TCMT11. series consist of a phototransistor optically coupled to a gallium

SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for

SFH615A / SFH6156. Pb Pb-free. Optocoupler, High Reliability, 5300 V RMS VISHAY. Vishay Semiconductors

SFH6A / SFH66 Optocoupler, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS Fast Switching Times Low CTR Degradation Low Coupling

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low

Symbol Parameter Value Unit RMS on-state current (full sine wave) Qxx35P5 T C. f = 120 Hz T J. 10 μs I GT

Description 30 mp / 35 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls, lighting controls,

PHOTO SCR OPTOCOUPLERS

PACKAGE SCHEMATIC 6 6 ANODE 6 GATE CATHODE 2 5 ANODE N/C 3 4 CATHODE 6 DESCRIPTION The HC series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon

Switching Diode CD4148WN 1:6

Switching Diode CD4148WN 1:6 Switching Diode CD4148WN FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 0805 Leadfree and RoHS compliance components For

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

Zener Diodes FEATURES APPLICATIONS

Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

200 mw Power derating above 25 o P. tot

Switching Diode CD4148WSP FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 & 0603 Leadfree and RoHS compliance components For small signal switching

Teccor brand Thyristors 0.8 Amp Sensitive SCRs

Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current as furnished by

SP8008 Series Diode Array

SP88 Series Diode Array RoHS Pb GRN Description The SP88 integrates eight channels of ultra low capacitance common mode protection for electronic equipment exposed to electrostatic discharges (SD. This

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low

High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00

Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. LBA11 Dual Pole OptoMOS Relay Parameter Ratings Units Blocking Voltage 3 V

Metal Oxide Varistor for Automotive:TVM-C Series

Features 1. Qualification based on AEC-Q200 Rev-C 2. High surge suppress capability for automotive application (load dump) 3. No temperature derating up to 125 C 4. Bidirectional and symmetrical V/I characteristics

74F109 Dual JK Positive Edge-Triggered Flip-Flop

Dual JK Positive Edge-Triggered Flip-Flop General Description The F109 consists of two high-speed, completely independent transition clocked JK flip-flops. The clocking operation is independent of rise

Display Surface-mount ELSS-511UBWA/C470

Features Industrial standard size. Packaged in tape and reel for SMT manufacturing. The thickness is thinness than tradition display. Low power consumption. Categorized for luminous intensity. The product

Small Signal Zener Diodes

Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT 2.5; 5 ma V Z specification Pulse current Int. construction Single FEATURES Saving space

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

PACKAGE HAA84 SCHEMATIC 4 COLLECTOR 4 2 3 EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor

MOC8111 MOC8112 MOC8113

PACKAGE SCHEMATIC ANODE 6 N/C 6 6 CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER 6 DESCRIPTION The MOC8X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor

C2D20120D Silicon Carbide Schottky Diode Zero Recovery Rectifier

C2D212D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 29 A ** Q c = 122 nc ** Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency

Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package

TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package 17295-5 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

Dual 1 Form A Solid State Relay Features Dual Channel (LH15) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON Ω Load Voltage 35 V High Surge Capability Clean Bounce Free Switching

6-PIN DIP, 400V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET

DESCRIPTION Solid State Relay OCMOS FET PS7141-1A,PS7141L-1A 6-PIN DIP, 4V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET The PS7141-1A and PS7141L-1A are solid state relays containing GaAs LEDs on the

Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 24 V GS = 20 V, T C = 100 C.

V DS 12 V C2M812D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 36 A 8 mω High Blocking Voltage with Low On-Resistance High Speed

Small Signal Zener Diodes

Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC-

Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection. SP725 Lead-Free/Green Series. RoHS Pb GREEN.

RoHS Pb GREEN Pinout Functional Block Diagram 5, 6 7, 8 SP725 (SOIC) IN 1 IN 2 IN 3, 4 1 2 3 4 8 7 6 5 Description Features Applications 67 Electronics Designers Guide 2008 Littelfuse Absolute Maximum

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

PRODUCTION DATA SHEET

The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew

IRLML2030TRPbF HEXFET Power MOSFET

V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible

Varistor Products Radial Lead Varistors > ZA Series

RoHS Description The ZA Series of transient voltage surge suppressors are radial leaded varistors (MOVs) designed for use in the protection of low and medium-voltage circuits and systems. Typical applications

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4N37 HA HA2 HA3 HA4 HA5 WHITE PACKAGE (-M SUFFIX) SCHEMATIC 2 3 NC PIN. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR. BASE 5 4 BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The general purpose

PS7113-1A,-2A,PS7113L-1A,-2A

Solid State Relay OCMOS FET PS7113-1A,-2A,PS7113L-1A,-2A 6, 8-PIN DIP, 3 ma CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET DESCRIPTION The PS7113-1A, -2A and PS7113L-1A, -2A are solid state

C2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking

C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low

Small Signal Zener Diodes

Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q qualified Compliant to RoHS Directive 22/95/EC and in accordance to WEEE

C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward

Qxx15xx & Qxx16xHx Series

Teccor brand Thyristors Description 15 mp and 16 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,

HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS

MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz

Spezifikation für Freigabe / specification for release

Artikelnummer / part number : 82380180121 Datum / Date : 2006-08-01 ROHS Compliant A Mechanische Abmessungen / dimensions : b SIZ Size L T a b min/max min/max min/max min/max 0508 1.05/1.35 1.85 /2.15

CNY17 Series. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards.

Optocoupler with Phototransistor Output Description The CNY7 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.