Symbol Parameter Test Conditions Value Unit Sxx15L T C. = 90 C 15 RMS on-state current Sxx16R = 90 C 9.5 I T(AV) Sxx16R

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1 Sxx15x & Sxx16x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SRs are triggered with few milliamperes of current at less than 1.5V potential. Features & Benefits RoHS compliant Glass passivated junctions Voltage capability up to 00 V Surge capability up to 225 gency pproval gency Main Features gency File Number L Package: E71639 pplications Typical applications are capacitive discharge systems for strobe lights, nailers, staplers and gas engine ignition. lso controls for power tools, home/brown goods and white goods appliances. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Symbol Value Unit Schematic Symbol I T(RMS) 15 & 16 RM /V RRM 400 to 00 V I GT 30 m K G bsolute Maximum Ratings Standard SRs Symbol Parameter Test onditions Value Unit Sxx15L T = I T(RMS) RMS on-state current T = 1 16 Sxx15L T = I T(V) verage on-state current T = 1 1 I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = single half cycle; f = 60Hz; (initial) = I 2 t I 2 t Value for fusing t p = 8.3 ms 2 2 s di/dt ritical rate of rise of on-state current f = 60 Hz ; = /μs I GM Peak gate current = 3 P G(V) verage gate power dissipation = 0.6 W T stg Storage temperature range -40 to 150 Operating junction temperature range -40 to Note: xx = voltage

2 Electrical haracteristics ( = 25, unless otherwise specified) Symbol Test onditions Value Sxx15x Sxx16x I GT = 12V R L = 60 Ω MX. 30 m MX. 1 V V GT = 12V R L = 60 Ω MX. 1.5 V 400V 450 = RM ; gate open; = 0 600V V 400 dv/dt 00V MIN. 200 V/μs 400V 350 = RM ; gate open; = 600V V 300 V GD = RM R L = 3.3 kω = 1 MIN. 0.2 V I H I T = 200m (initial) MX. 40 m t q I T =2; t p =50μs; dv/dt=5v/μs; di/dt=-30/μs MX. 35 μs t gt I G = 2 x I GT PW = 15µs I T = 12 TYP. 2 μs Note: xx = voltage, x = package (1) I T =2; t p =50μs; dv/dt=5v/μs; di/dt=-30/μs Unit Static haracteristics Symbol Test onditions Value Unit V TM 15 Device I T = 30; t p = 380 µs 16 Device I T = 32; t p = 380 µs MX. 1.6 V = V V V 500 I DRM / I RRM RM = V RRM = 0 800V MX. 00 μ 00V 3000 = V V 2000 Thermal Resistances Symbol Parameter Value Unit R θ(j-) Junction to case () / 1.1 Sxx15L 2.5 /W R θ(j-) Junction to ambient / 40 Sxx15L 50 /W Note: xx = voltage

3 Figure 1: Normalized D Gate Trigger urrent vs. Junction Temperature Figure 2: Normalized D Gate Trigger Voltage vs. Junction Temperature Ratio of I GT / I GT ( = 25 ) Ratio of V GT / V GT ( = 25º) Junction Temperature ( ) -- (º) Junction Temperature ( ) -- ( ) Figure 3: Normalized D Holding urrent vs. Junction Temperature Figure 4: On-State urrent vs. On-State Voltage (Typical) Ratio of I H / I H ( = 25 ) Junction Temperature ( ) -- ( ) Instantaneous On-state urrent (i T ) mps Instantaneous On-state Voltage (v T ) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State urrent Figure 6: Maximum llowable ase Temperature vs. RMS On-State urrent verage On-State Power Dissipation [P D(V) ] - (Watts) RMS On-State urrent [I T(RMS) ] - (mps) Maximum llowable ase Temperature (T ) Sxx15L 90 URRENT WVEFORM: Sinusoidal 85 LOD: Resistive or Inductive ONDUTION NGLE: RMS On-State urrent [I T(RMS) ] - mps

4 Figure 7: Maximum llowable ase Temperature vs. verage On-State urrent Figure 8: Maximum llowable mbient Temperature vs. RMS On-State urrent Maximum llowable ase Temperature (T ) Sxx15L URRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive ONDUTION NGLE: verage On-State urrent [I T(VE) ] - mps Normalized Peak urrent ase Temperature (T ) - Figure 9: Maximum llowable mbient Temperature vs. verage On-State urrent Maximum llowable mbient Temperature (T ) Sxx15L URRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive ONDUTION NGLE: 180 FREE IR RTING verage On-State urrent [I T(VE) ] - mps Note: xx = voltage Figure : Peak apacitor Discharge urrent Figure 11: Peak apacitor Discharge urrent Derating Peak Discharge urrent (I TM ) - mps 0 I TRM t W Normalized Peak urrent Pulse urrent Duration (t w ) - ms ase Temperature (T ) -

5 Temperature Teccor brand Thyristors Figure 12: Surge Peak On-State urrent vs. Number of ycles Peak Surge (Non-repetitive) On-state urrent (I TSM ) mps 00 0 Sxx15L SUPPLY FREQUENY: 60 Hz Sinusoidal LOD: Resistive RMS On-State urrent: [I T(RMS) ]: Maximum Rated Value at Specified ase Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge urrent Duration -- Full ycles Soldering Parameters Reflow ondition - Temperature Min (T s(min) ) 150 Pb Free assembly T P Ramp-up t P Pre Heat - Temperature Max (T s(max) ) Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 /second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 /second max t S - Temperature (T L ) (Liquidus) 217 Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 25 time to peak temperature Time Time within 5 of actual peak Temperature (t p ) seconds Ramp-down Rate 5 /second max Time 25 to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 dditional Information Datasheet Resources Samples

6 Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design onsiderations 0% Matte Tin-plated UL recognized epoxy meeting flammability classification 94V-0 opper lloy areful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. orrect mounting, soldering, and forming of the leads also help protect against component damage. Test Blocking Temperature ycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and onditions MIL-STD-750, M-40, ond pplied Peak for 08 hours MIL-STD-750, M-51, 0 cycles; -40 to +150 ; 15-min dwell-time EI / JEDE, JESD hours; 320V - D: 85 ; 85% rel humidity MIL-STD-750, M-31, 08 hours; hours; -40 MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 ond E Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab ommon with enter Lead E B D NODE T MESURING POINT O P RE (REF.) 0.17 IN Dimension Inches Millimeters Min Max Min Max B D E G F L H R NOTH IN GTE LED TO ID. NON-ISOLTED TB F G H J THODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R

7 Dimensions TO-220B (L-Package) Isolated Mounting Tab E T MESURING POINT RE (REF.) 0.17 IN 2 O P Dimension Inches Millimeters Min Max Min Max B D B D E F F G L H R G H J THODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R Dimensions TO- 263B (N-package) D 2 -Pak Surface Mount B NODE V T MESURING POINT E RE: 0.11 in 2 Dimension Inches Millimeters Min Max Min Max W THODE G S GTE K D F H U J B D E F G H J K S V U W

8 Teccor brand Thyristors Product Selector Voltage Part Number 400V 600V 800V 00V Gate Sensitivity Type Package Sxx15L X X X X 30m Standard SR TO-220L X X X X 30m Standard SR TO-220R X X X X 30m Standard SR TO-263 Note: xx = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity Sxx15LTP Sxx15L 2.2 g Tube 500 (50 per tube) TP 2.2 g Tube 500 (50 per tube) TP 1.6 g Tube 500 (50 per tube) RP 1.6 g Embossed arrier 500 Note: xx = Voltage TO-263 Embossed arrier Reel Pack (RP) Specs Meets all EI Standards Part Marking System TO-220 B - (L and R Package) TO-263 B - (N Package) 0.63 (16.0) (4.0) 59 (1.5) DI Gate athode (24.0) (2) * YM * over tape node (13.0) rbor Hole Diameter (33) Dimensions are in inches (and millimeters). Date ode Marking Y:Year ode M: Month ode XXX: Lot Trace ode Part Numbering System 1 (25.7) S R 56 Direction of Feed DEVIE TYPE S: SR LED FORM DIMENSIONS xx: Lead Form Option VOLTGE RTING 40: 400V 60: 600V 80: 800V K0: 00V URRENT RTING 15: 15 16: 16 SENSITIVITY & TYPE (blank): 30m PKGE TYPE L: TO-220 Isolated R: TO-220 Non-Isolated N: TO-263 (D 2 -Pak)