Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
|
|
- Marilynn McLaughlin
- 5 years ago
- Views:
Transcription
1 7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc= C unless otherwise specified) Items Symbols Conditions Maximum ratings Units CollectorEmitter voltage VCES 6 V GateEmitter voltage VGES ±2 V Ic Continuous Tc=8 C 1 Collector current Icp 1ms Tc=8 C 2 Ic 1 A Ic pulse 1ms 2 Collector power dissipation Pc 1 device 43 W CollectorEmitter voltage VCES 6 V GateEmitter voltage VGES ±2 V Collector current IC Continuous Tc=8 C 5 ICP 1ms Tc=8 C 1 A Collector power dissipation PC 1 device 215 W Repetitive peak reverse voltage (Diode) VRRM 6 V Repetitive peak reverse voltage VRRM 8 V Average output current IO 5Hz/6Hz, sine wave 1 A Surge current (NonRepetitive) IFSM 1ms, Tj=15 C 7 A I 2 t (NonRepetitive) I 2 t half sine wave 245 A 2 s Junction temperature Tj Inverter, Brake 175 Converter 15 Operating junci temperature Inverter, Brake 15 Tjop (under switching conditions) Converter 15 C Case temperature Tc 1 Storage temperature Tstg 4 to +1 between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) AC : 1min. VAC Screw torque Mounting (*3) M5 3.5 N m Inverter Brake Converter Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Nm (M5) 1 12b MARCH 214
2 7MBR1VP65 Elecical characteristics (at Tj= C unless otherwise specified) Items Symbols Conditions Inverter Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = 6V 1. ma GateEmitter leakage current IGES VGE = V, VGE = ±2V 2 na GateEmitter threshold voltage VGE (th) VCE = 2V, IC = 75mA V CollectorEmitter saturation voltage VCE (sat) (terminal) VCE (sat) (chip) VGE = 15V IC = 1A VGE = 15V IC = 1A Tj= C Tj=1 C 2.65 Tj=15 C 2.75 Tj= C Tj=1 C 2. Tj=15 C 2.35 Internal gate resistance Rg(int) Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz 4.9 nf Turnon time Turnoff time Forward on voltage (i) VCC = 3V IC = 1A VGE = +15 / 15V RG = 3Ω tf.3.45 VF (terminal) VF (chip) IF = 1A IF = 1A Tj= C Tj=1 C 2.1 Tj=15 C 2.5 Tj= C Tj=1 C 1.7 Tj=15 C 1.65 Reverse recovery time r IF = 1A.35 µs Zero gate voltage collector current ICES VGE = V VCE = 6V Units V µs 1. ma V Brake Converter Thermistor GateEmitter leakage current CollectorEmitter saturation voltage IGES VCE (sat) (terminal) VCE (sat) (chip) VCE = V VGE = +2 / 2V VGE = 15V IC = 5A VGE = 15V IC = 5A 2 na Tj= C Tj=1 C 2.1 Tj=15 C 2.2 Tj= C Tj=1 C 1.9 Tj=15 C 2. Internal gate resistance Rg(int) Ω Turnon time Turnoff time tf VCE = 3V IC = 5A VGE = +15 / 15V RG = 43Ω Reverse current IRRM VR = 6V 1. ma Forward on voltage VFM (chip) IF = 1A terminal chip 1. Reverse current IRRM VR = 8V 1. ma Resistance R T = C 5 T = 1 C B value B T = / 5 C K V µs V Ω Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Inverter IGBT.35 Thermal resistance (1device) Rth(jc) Inverter FWD.62 Brake IGBT.71 Converter Diode.66 Contact thermal resistance (1device) (*4) Rth(cf) with Thermal Compound.5 Units C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2
3 7MBR1VP65 Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 15 o C / chip 2 V GE =2V 15V 2 V GE =2V 15V 12V 12V V V 8V 8V CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) V GE =15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= o C / chip Tj= C Tj=15 C Tj=1 C C o l l e c t o r E m i t t e r v o l t a g e : V C E [ V ] Ic=2A Ic=1A Ic=5A CollectorEmitter voltage: V CE [V] Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= 1MHz, Tj= o C Dynamic gate charge (typ.) Vcc=3V, Ic=1A, Tj= C C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] Cies Coes Cres C o l l e c t o r E m i t t e r v o l t a g e : V C E [ 2 V / d i v ] G a t e E m i t t e r v o l t a g e : V G E [ 5 V / d i v ] VCE VGE 6 6 Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 3
4 7MBR1VP65 S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] Switching time vs. Collector current (typ.) Vcc=3V, VGE=±15V, Rg=3Ω, Tj=1 C Collector current: I C [A] Switching time vs. gate resistance (typ.) Vcc=3V, Ic=1A, VGE=±15V, Tj=1 C Gate resistance : Rg [Ω] Switching loss vs. gate resistance (typ.) Vcc=3V, Ic=1A, VGE=±15V Eon(15 o C) Eon(1 o C) Eoff(15 o C) Eoff(1 o C) 5 Err(15 o C) Err(1 o C) Gate resistance : Rg [Ω] tf tf 4 S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] Collector current: IC [A] Switching time vs. Collector current (typ.) Vcc=3V, VGE=±15V, Rg=3Ω, Tj=15 C Collector current: I C [A] Switching loss vs. Collector current (typ.) Vcc=3V, VGE=±15V, Rg=3Ω Collector current: I C [A] Reverse bias safe operating area (max.) +VGE=15V, VGE <= 15V, Rg >= 3Ω, Tj = 15 C RBSOA (Repetitive pulse) Eon(15 C) Eon(1 C) Eoff(15 C) Eoff(1 C) Err(15 C) Err(1 C) tf CollectorEmitter voltage : VCE [V] (Main terminals)
5 7MBR1VP65 Forward current vs. forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=3V, VGE=±15V, Rg=3Ω Forward current : IF [A] Tj=15 C Tj=1 C 5 Tj= C R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ] r(15 C) r(1 C) Irr(15 C) Irr(1 C) Forward on voltage : V F [V] Forward current : I F [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip 2 Forward current : IF [A] Tj=1 C Tj= C Forward on voltage : V FM [V] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(jc) [ C/W ] 1..1 Conv. Diode Zth = 4 rn n= 1 IGBT[Brake] FWD[Inverter] IGBT[Inverter] n Tn [sec] rn IGBT [ C/W] FWD BIGBT Conv e t n R e s i s t a n c e : R [ k Ω ] Pulse width : Pw [sec] Temperature [ C ] 5
6 7MBR1VP65 Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 15 o C / chip 1 V GE =2V 15V 12V 1 V GE =2V 15V 12V V 8V V 8V CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE=15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= o C / chip Tj= C Tj=15 C Tj=1 C C o l l e c t o r E m i t t e r v o l t a g e : V C E [ V ] Ic=1A Ic=5A Ic=A CollectorEmitter voltage: V CE [V] Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= 1MHz, Tj= o C Dynamic gate charge (typ.) Vcc=3V, Ic=5A, Tj= C C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] Cies Coes Cres C o l l e c t o r E m i t t e r v o l t a g e : V C E [ 2 V / d i v ] G a t e E m i t t e r v o l t a g e : V G E [ 5 V / d i v ] VGE VCE 5 5 Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 6
7 7MBR1VP65 Outline Drawings(Unit:mm) shows theoretical dimension. ( ) shows reference dimension. Section AA Weight: 2g(typ.) Equivalent Circuit [ Converter ] [ Brake] [ Thermistor ] 7
8 7MBR1VP65 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and suctures as of March 214. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, ade secret or other intellectual property right owned by Fuji Elecic Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Elecic Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Elecic Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Elecic semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products inoduced in this Catalog are intended for use in the following eleconic and elecical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Elecical home appliances Personal equipment Indusial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Elecic Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal conol equipment Gas leakage detectors with an autoshu feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring sict reliability such as the following and equivalents to sategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear conol equipment Submarine repeater equipment 7. Copyright by Fuji Elecic Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Elecic Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Elecic Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Elecic Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with insuctions set forth herein. 8
Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75
7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVX125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous
IGBT MODULE (V series) V / 45A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous
2MBI225VN-2-5 IGBT MODULE (V series) 2V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
More informationCollector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
7MBR5VM1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75
7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationTarget Specification (Tentative)
Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2646 www.fotorele.net e:mail minsk17@tut.by Fuji Electric
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 150
6MBI15VX125 IGBT MODULE (V series) 12V / 15A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationChapter 11. Reliability of power module
Chapter 11 Reliability of power module CONTENTS Page 1 Basis of the reliability 11-2 2 Reliability test condition 11-3 3 Power cycle curve 11- Market of the power modules will widely spread towards the
More informationGT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking
GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
More informationCM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.
More informationCM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E
More informationGSID300A125S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance
More informationGSID300A120S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous
2MBI225VN-12-5 IGBT MODULE (V series) 12V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
More informationGSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:
IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS
More informationECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units
IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
More information< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
More informationKDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationIGBT PIM Module, 15 A
IGBT PIM Module, 1 A GB1RF1K ECONO PIM PRODUCT SUMMARY V CES 1 V V CE(on) (typical). V t sc at T J = 1 C > 1 µs I C at T C = C 1 A FEATURES Low V CE(on) non punch through IGBT technology Low diode V F
More informationSKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More information< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING
More information< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R
I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationTrenchStop Series. P t o t 270 W
Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationSKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More information5SNA 1500E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 47-7 2-24 5SNA 5E3335 HiPak IGBT Module VCE = 33 V IC = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More informationLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More information5SNA 1000G HiPak IGBT module
Datasheet 5SYA 1465-02, Nov. 2018 5SNA 1000G650300 HiPak IGBT module VCE = 6500 V IC = 1000 A Ultra-low-loss, rugged SPT ++ chip-set Exceptional ruggedness and highest current rating High insulation package
More informationSTARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More information5SNG 0150Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low
More informationSTARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications
More information5SNE 1000E HiPak Chopper IGBT Module
Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
More informationECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units
Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse
More informationFGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More informationInsulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More information5SNG 0200Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1448-216-9 5SNG Q17 62Pak phase leg IGBT Module VCE = 17 V IC = A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal
More informationAPPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA
CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,
More information5SNA 2400E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
More informationIGW25T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More information5SNA 1300K StakPak IGBT Module
Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High
More informationSoft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
More informationSTARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSTARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationSGP20N60 SGW20N60. Fast IGBT in NPT-technology
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationNGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V
NGTBN6SEG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short
More informationIGW15T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Approx. 1.0V reduced V CE(sat) compared to BUP313 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop
More informationSymbol Parameter Test condition Value Unit V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
FEATURES 1200V,100A,V CE(sat) (typ.)=1.75v@v GE =15V IGBT CHIP: Trench + Field Stop technology Fast switching and short tail current Low switching losses RoHS Compliant APPLICATIONS Electric welding machine
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationSoft Switching Series
Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop
More informationSTARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They
More informationGHIS075A120T2P2 Si IGBT/ SiC SBD PIM Module
Si IGBT/ SiC SBD PIM Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C =75A, T C =25 Low Switching Loss SiC SBD for boost diode: V F = 1.7V @ I F = 5A, T C =25 1%
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive
More informationABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A
VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More information60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current
Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high
More informationPG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationNot Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A
CMMX- CMMX- PPLTION General purpose Inverters, Servo mplifiers OUTLINE DRWING & CIRCUIT DIGRM 11. 118.1 11 ±. 99 9. 8.. 11.66 1.8.1 6.9. 8..6 1 9 8 6 1 9 8 6 1.. 6 8 9 6 61.8 (.) 1.9 16.9 R(1~) S(~6) T(9~1)
More informationIGP03N120H2 IGW03N120H2
HighSpeed 2Technology Designed for: SMPS Lamp Ballast ZVSConverter optimised for softswitching / resonant topologies G C E 2 nd generation HighSpeedTechnology for 1200V applications offers: loss reduction
More informationTrenchStop Series I C
Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted
More informationABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A
VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationAbsolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More informationIRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationCM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack
IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N
More informationSTARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package
STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationIKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters
More information5SNG 1000X PRELIMINARY LinPak phase leg IGBT module
Data Sheet, Doc. No. 5SYA 1449- Aug 16 5SNG 1X173 PRELIMINARY LinPak phase leg IGBT module VCE = 17 V IC = 2 x 1 A Ultra low inductance phase-leg module Compact design with very high current density Paralleling
More informationABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A
VCE = 17 V IC = 8 A ABB HiPak IGBT Module 5SNE 8M171 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power
More informationIRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
More informationParameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC
IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent
More informationSTARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are
More informationTRENCHSTOP Series. Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology. Maximum Ratings Parameter Symbol Value Unit.
Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for : Freuency Converters
More informationSiC Power Module BSM600D12P3G001. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module BSM6D2P3G Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss.
More informationSTARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationGSID040A120B1A3 IGBT Dual Boost Module
IGBT Dual Boost Module Features: High efficiency dual boost Ultrafast switching frequency Low Inductance Layout Lead Free, Compliant with RoHS Requirement Application: Solar inverter Bypass Diode Maximum
More informationIKW40N120T2 TrenchStop 2 nd Generation Series
Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters
More informationSKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationIRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationParameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More informationIRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
More informationIGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGP40N65H5,IGW40N65H5 650VIGBThighspeedswitchingseriesfifthgeneration. Datasheet
IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology IGP4N65H5,IGW4N65H5 65VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration
More informationSGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers:
More information20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.
5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationSTARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR IGBT GD3PJT6L2S 6V/3A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed
More informationn-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
More informationSiC Power Module BSM600D12P3G001. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss. 6 5 NTC
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationCID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationIXYL40N250CV1 V CES. High Voltage XPT TM IGBT w/ Diode = 2500V I C110. = 40A V CE(sat) 4.0V = 134ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
More information