Target Specification (Tentative)
|
|
- Avice Maxwell
- 5 years ago
- Views:
Transcription
1 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Fuji Electric Systems Co.,Ltd. Module Development Division High Power Module Gr. Target Specification (Tentative) Device name: IGBT Module Type name: 1MBI8UG33 Spec. no. : MTF2246 DRAWN DATE Oct.22 ' NAME Y.arita APPROVED CHECKED CHECKED Oct.22 ' T.koga H.kakiki MTF2246 1
2 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail 1MBI8UG33 1. Outline drawing ( Unit : mm ) 2. Equivalent circuit main collector sense collector gate sense emitter main emitter MTF2246 2
3 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail 3.Absolute Maximum Ratings ( at Tc= 2 C unless otherwise specified ) Items Symbols Conditions Maximum Ratings Units CollectorEmitter voltage GateEmitter voltage Collector current Ic Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and base (*1) Viso AC : 1min. Mounting Screw Torque (*2) Main Terminals Sense Terminals (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.2~.7 Nm (M6) Main Terminals 8~1 Nm (M8) Sense Terminals 1.7~2.1 Nm (M4) 4. Electrical characteristics ( at Tj= 2 C unless otherwise specified) Zero gate voltage Collector current GateEmitter leakage current GateEmitter threshold voltage CollectorEmitter saturation voltage Turnon time VCES VGES Ic Icp Continuous 1ms Tc=2 C Tc=8 C Tc=2 C Tc=8 C 33 V ±2 V Characteristics min. typ. max. Units ICES VGE = V VCE=33V 1. ma IGES VCE = V VGE=±2V 32 na VGE(th) VCE = 2V Ic=8mA V VCE(sat) Tj= 2 C (terminal) VGE=1V Tj=12 C 3.1 VCE(sat) Ic=8A Tj= 2 C V (chip) Tj=12 C 3. nf ton Vcc=18V, Ic=8A 2.6 tr VGE=±1V 1. toff Rg=2.4 Ω, Ls=22nH 2.3 μs tf Tj=12 o C.4 Items Symbols Conditions ~ +12 Input capacitance Cies VCE=1V,VGE=V,f=1MHz 16 Turnoff time A W C 6. kvac VF Tj= 2 C (terminal) VGE=V Tj=12 C Forward on voltage VF IF=8A Tj= 2 C (chip) Tj=12 C Reverse recovery time trr IF=8A, Tj=12 o C.8 N m V μs Lead resistance, terminalchip R lead.1 mω MTF2246 3
4 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. IGBT Thermal resistance(1device) Rth(jc) FWD Contact Thermal resistance IGBT. Rth(cf) (1device) (*3) FWD 18. (*3) This is the value which is defined mounting on the additional cooling fin with thermal compound (1W/m ). Units C/kW 6. Indication on module Display on the module label Logo of production Type name: 1MBI8UG33 I C, V CES rating : 8A 33V Lot No ( digits) Place of manufacturing (code) Bar code with serial No. This material and the information herein is the property o Fuji Electric Co.,Ltd. They shall be neither reproduced, c lent, or disclosed in any way whatsoever for the use of a third party nor used for the manufacturing purposes with 7.Applicable category This specification is applied to Power Integrated Module named 1MBI8UG33. 8.Storage and transportation notes The module should be stored at a standard temperature of to 3 C and humidity of 4 to 7%. Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.. Definitions of switching time V ~ % V L VGE tr r VCE Ir r Ic Vcc % ~ % RG VGE VCE Ic V A Ic 1% to n tr ( i ) rt 1% VCE 1% ~ to f f tf 1. Packing and labeling Display on the packing box Logo of production Type name Lot No Products quantity in a packing box MTF2246 4
5 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail 11. Reliability test results Reliability Test Items Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Number of sample Test categories Acceptance number Me 1 Terminal Strength Pull force : 4N (Pull test) Test time : 1±1 sec. Test Method 41 MethodⅠ ( : 1 ) 2 Mounting Strength Screw torque : 1.8 ~ 2.1 N m (M4) 4.2 ~.7 N m (M6) Test Method 42 methodⅡ ( : 1 ) 8.~ 1. N m (M8) Test time : 1±1 sec. 3 Vibration Range of frequency : 1 ~ Hz Sweeping time : 1 min. Acceleration : 1m/s 2 Test Method 43 Reference 1 Condition code B ( : 1 ) Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum accelerati : m/s 2 Pulse width : 6.msec. Test Method 44 Condition code A ( : 1 ) Direction : Each X,Y,Z axis Test time : 3 times/direction 1 High Temperature Storage temp. : 12± Test Method 21 ( : 1 ) Storage Test duration : hr. Environment Tests 2 Low Temperature Storage temp. : 4± Storage Test duration : hr. 3 Temperature Storage temp. : 8±2 Humidity Relative humidity : 8±% Storage Test duration : hr. 4 Unsaturated Test temp. : 12±2 Pressurized Vapor Test humidity : 8±% Test duration : 6hr. Temperature Cycle Test temp. : Low temp. 4± High temp. 12 ± RT ~ 3 Test Method 22 Test Method 13 Test code C Test Method 13 Test code E Test Method 1 ( : 1 ) ( : 1 ) ( : 1 ) ( : 1 ) Dwell time : High ~ RT ~ Low ~ RT 1hr..hr. 1hr..hr. Number of cycles : 1 cycles 6 Thermal Shock + Test temp. : High temp. 1 Test Method 37 method Ⅰ Condition code A ( : 1 ) + Low temp. Used liquid : Water with ice and boiling water Dipping time : min. par each temp. Transfer time : 1 sec. Number of cycles : 1 cycles MTF2246 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by
6 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Reliability Test Items Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Number of sample Test categories Acceptance number Endurance Tests 1 High temperature Reverse Bias Test temp. : Ta = 12 o C± o C (Tj 1 o C) Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : hr. 2 High temperature Bias (for gate) Test temp. : Ta = 12 o C± o C (Tj 1 o C) Bias Voltage : VC = VGE = +2V or 2V Bias Method : Applied DC voltage to GE VCE = V Test duration : hr. 3 Temperature Humidity Bias Test temp. : 8±2 o C Relative humidity : 8±% Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : hr. 4 Intermitted ON time : 2 sec. Operating Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=1± o C ( for IGBT ) Tj 1 o C, Ta=2± o C Number of cycles : 1 cycles Electrical Leakage current characteristic Gate threshold voltage Saturation voltage Forward voltage Thermal IGBT resistance FWD Isolation voltage Visual Visual inspection inspection Peeling Plating and the others Note : Item Characteristic Symbol ICES ±IGES VGE(th) VCE(sat) VF VGE or VCE VF Viso Failure Criteria Failure criteria Lower limit Upper limit USL 2 USL 2 LSL.8 USL 1.2 USL 1.2 USL 1.2 USL 1.2 Broken insulation The visual sample USL 1.2 Test Method 11 ( : 1 ) Test Method 11 ( : 1 ) Test Method 12 Condition code C Unit ma A ma V V mv mv ( : 1 ) Test Method 16 ( : 1 ) Note LSL : Lower specified limit. USL : Upper specified limit. Each parameter measurement readouts shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MTF2246 6
7 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Collector current vs. CollectorEmitter voltage (typ.) Tj= 2 o C / chip 1V 12V 16 VGE=2V 14 Collector current vs. CollectorEmitter voltage (typ.) Tj= 12 o C / chip 16 1V VGE=2V 14 12V Collector current : Ic [A] V 8V Collector current : Ic [A] V 8V CollectorEmitter voltage : VCE [V] CollectorEmitter voltage : VCE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE=1V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj=2 o C / chip Collector current : Ic [A] Tj=2 o C Tj=12 o C CollectorEmitter voltage : VCE [V] Collector Emitter voltage : VCE [ V ] Gate Emitter voltage : VGE [ V ] Ic=16A Ic=8A Ic= 4A Capacitance vs. CollectorEmitter voltage (typ.) VGE=V, f= 1MHz, Tj= 2 o C Dynamic Gate charge (typ.) Vcc=18V,Ic=8A,Tj= 2 o C. 2 VCE Capacitance : Cies, Coes, Cres [ nf ] Cies Cres Coes CollectorEmitter voltage : VCE [V] 1 VGE Gate charge : Qg [ μc ] GateEmitter voltage : VGE [V] CollectorEmitter voltage : VCE [V] MTF2246 7
8 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Switching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Tj= 2 o C Switching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Tj=12 o C Switching time : ton, tr, toff, tf [ nsec ] 1 toff ton tf tr Switching time : ton, tr, toff, tf [ nsec ] toff ton tf tr Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=18V, Ic=8A, VGE=±1V, Tj= 12 o C Vcc=18V, VGE=±1V Switching time : ton, tr, toff, tf [ nsec ] ton toff tr tf Gate resistance : Rg [ Ω ] Switching loss : Eon, Eoff [ mj/pulse ] Eon,Tj=2 Eon,Tj=12 Eoff,Tj=2 Eoff,Tj= Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=18V, Ic=8A, VGE=±1V ±VGE=1V, Tj=12 o C / chip 3 2 Switching loss : Eon, Eoff [ mj/pulse ] 2 Eon Eoff Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Collector Emitter voltage : VCE [ V ] MTF2246 8
9 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Forward current vs. Forward on voltage (typ.) chip Switching loss vs. Collector current (typ.) Vcc=18V, VGE=±1V Forward current : IF [ A ] Tj=2 o C Tj=12 o C Switching loss : Err [ mj/pulse ] Tj=12 o C Tj=2 o C Forward on voltage : VF [ V ] Forward current : IF [ A ] Switching loss vs. Gate resistance (typ.) Reverse recovery characteristics (typ.) Vcc=18V, IF=8A, VGE=±1V, Tj=12 o C Vcc=18V, VGE=±1V Switching loss : Err [ mj/pulse ] Gate resistance : Rg [ Ω ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1 Tj=2 o C Irr Tj=12 o C Tj=12 o C trr Tj=2 o C Forward current : IF [ A ] Transient thermal resistance (max.) 1. Thermal resistanse : Rth(jc) [ C/W ] FWD IGBT Pulse width : Pw [ sec ] MTF2246
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVX125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous
IGBT MODULE (V series) V / 45A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous
2MBI225VN-2-5 IGBT MODULE (V series) 2V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
More informationБеларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail TARGET SPECIFICATION
Беларусь г.минск тел./факс 8(17)2-6-46 электронные компоненты радиодетали www.fotorele.net emil minsk17@tut.by Беларусь г.минск тел./факс 8(17)2-6-46 www.fotorele.net emil minsk17@tut.by TARGET SPECIFICATION
More informationCollector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationCollector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
More informationCollector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75
7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
More informationБеларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail
Беларусь г.минск тел./факс 8(17)2-6-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2-6-46 www.fotorele.net e:mail minsk17@tut.by Fuji Discrete
More informationCM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E
More informationCM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.
More informationGT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking
GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
More informationAbsolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More information5SNA 1500E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 47-7 2-24 5SNA 5E3335 HiPak IGBT Module VCE = 33 V IC = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More information5SNE 1000E HiPak Chopper IGBT Module
Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
More informationCM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack
IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N
More information5SNG 0150Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low
More information5SNA 2400E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
More informationParameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More information5SNA 1000G HiPak IGBT module
Datasheet 5SYA 1465-02, Nov. 2018 5SNA 1000G650300 HiPak IGBT module VCE = 6500 V IC = 1000 A Ultra-low-loss, rugged SPT ++ chip-set Exceptional ruggedness and highest current rating High insulation package
More informationIRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A
VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More information5SNG 0200Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1448-216-9 5SNG Q17 62Pak phase leg IGBT Module VCE = 17 V IC = A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal
More informationABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A
VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationIRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A
VCE = 17 V IC = 8 A ABB HiPak IGBT Module 5SNE 8M171 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power
More informationIRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
More informationIRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17
More informationSKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationIGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGP40N65H5,IGW40N65H5 650VIGBThighspeedswitchingseriesfifthgeneration. Datasheet
IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology IGP4N65H5,IGW4N65H5 65VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP4N65H5,IGW4N65H5 Highspeedswitchingseriesfifthgeneration
More informationn-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
More informationECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units
Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse
More informationLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency
More informationIC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES
4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High
More informationKDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive
More informationECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units
IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
More informationIRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
More informationIRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationChapter 11. Reliability of power module
Chapter 11 Reliability of power module CONTENTS Page 1 Basis of the reliability 11-2 2 Reliability test condition 11-3 3 Power cycle curve 11- Market of the power modules will widely spread towards the
More information< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R
CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationIRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationSKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More information5SNG 1000X PRELIMINARY LinPak phase leg IGBT module
Data Sheet, Doc. No. 5SYA 1449- Aug 16 5SNG 1X173 PRELIMINARY LinPak phase leg IGBT module VCE = 17 V IC = 2 x 1 A Ultra low inductance phase-leg module Compact design with very high current density Paralleling
More informationIRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationIRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark
More information20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.
5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED
More informationTrenchStop Series. P t o t 270 W
Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short
More informationABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A
VCE = 45 V IC = 8 A ABB HiPak IGBT Module 5SNE 8G453 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high
More informationIRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationIKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters
More informationIRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
More informationMITSUBISHI ELECTRIC CORPORATION Prepared by S.Iura A S.Iura B S.Iura
SECURITY CODE Spec. NME Customer s Std. Spec. MITSUBISHI ELECTRIC CORP. PRELIMINRY MITSUBISHI ELECTRIC CORPORTION Prepared by S.Iura S.Iura B S.Iura Checked by H.Yamaguchi R I.Umezaki I.Umezaki E pproved
More information< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
More information5SNA 1300K StakPak IGBT Module
Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High
More informationn-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF
IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square
More informationGSID300A120S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with
More informationIRGB30B60K IRGS30B60K IRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature
More informationABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A
V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationIRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
More informationCM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM8DZB-N CM8DZB-N IC...8 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT TM Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters,
More information< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R
I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &
More informationSoft Switching Series
Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop
More informationSMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units
SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A
V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
More informationGSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:
IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS
More informationIGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW30N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl
IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGWN6H 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration IGWN6H HighspeedIGBTinTrenchandFieldstoptechnology
More informationAUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA % of the parts tested for
More information60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current
Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high
More informationIGW25T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationIRGB4062DPbF IRGP4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 75 C 5 µs short circuit SOA Square RBSOA
More informationIGP03N120H2 IGW03N120H2
HighSpeed 2Technology Designed for: SMPS Lamp Ballast ZVSConverter optimised for softswitching / resonant topologies G C E 2 nd generation HighSpeedTechnology for 1200V applications offers: loss reduction
More information50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
More informationGSID300A125S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance
More informationIRG7PH35UDPbF IRG7PH35UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature
More informationIGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW25N120H3 1200Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl
IGBT HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithsicdiodeidh1s1 IGWN1H3 1Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesthirdgeneration
More informationIGW15T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Approx. 1.0V reduced V CE(sat) compared to BUP313 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop
More information1200 Gate-emitter voltage V GE ± 20 DC collector current A T C = 25 C T C = 80 C I C
BSM 3 G 12 DN2S IGBT Power Module Single switch Including fast freewheeling diodes Package with insulated metal base plate Type Package Ordering Code BSM 3 G 12 DN2 12V 43 SINGLE SWITCH 1 C6776277 BSM
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationSoft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
More informationSGP20N60 SGW20N60. Fast IGBT in NPT-technology
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationIRG7PH42UDPbF IRG7PH42UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature
More informationPG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationSTGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.
Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged
More informationSKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More information1200 Gate-emitter voltage V GE ± 2 0 DC collector current A T C = 25 C T C = 80 C I C
BSM 2 G 12 DN2 IGBT Power Module Single switch Including fast freewheeling diodes Package with insulated metal base plate Type Package Ordering Code BSM 2 G 12 DN2 12V 3 SINGLE SWITCH 1 C6776267 BSM 2
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More informationIRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. μs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIKW40N120T2 TrenchStop 2 nd Generation Series
Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters
More informationTRENCHSTOP Series. Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology. Maximum Ratings Parameter Symbol Value Unit.
Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for : Freuency Converters
More informationSymbol Parameter Test condition Value Unit V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
FEATURES 1200V,100A,V CE(sat) (typ.)=1.75v@v GE =15V IGBT CHIP: Trench + Field Stop technology Fast switching and short tail current Low switching losses RoHS Compliant APPLICATIONS Electric welding machine
More informationAUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE AUIRGPS47D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA 1% of the parts
More informationIRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features
PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE
More informationTrenchStop Series I C
Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted
More informationInsulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
More information