CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack

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1 CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G ±0. -φ6. MOUNTING HOLES CE1 E C1 1. LABEL E E1 G TAB #1 t=0. CE1 0 E C1 E G G1 E1 CIRCUIT DIAGRAM Jul. 00

2 CM00DY-A ABSOLUTE MAXIMUM RATINGS (Tj = C) Symbol CES GES IC ICM IE (Note 1) IEM (Note 1) PC (Note ) Tj Tstg iso Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight Parameter Collector current Emitter current Torque strength Conditions G-E Short C-E Short DC, TC = 80 C *1 Pulse (Note ) Pulse (Note ) TC = C *1 Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Ratings 0 ± ~ + 0 ~ ~.. ~. 00 Unit A A W C C N m g ELECTRICAL CHARACTERISTICS (Tj = C) ICES IGES Cies Coes Cres QG td(on) tr td(off) tf Symbol GE(th) CE(sat) trr (Note 1) Qrr (Note 1) EC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG * * Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance CE = CES, GE = 0 IC = 0mA, CE = GE = GES, CE = 0 Tj = C IC = 00A, GE = 1 Tj = 1 C CE = GE = 0 1 : Tc, Tf measured point is just under the chips. : Typical value is measured by using Shin-etsu Silicone G-6. Test conditions, IC = 00A, GE = 1, IC = 00A GE1 = GE = 1, switching operation IE = 00A IE = 00A, GE = 0 IGBT part (1/ module) *1 FWDi part (1/ module) *1 Case to fin, Thermal compound Applied (1/ module) *1,* Note 1. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C. Min. 1.0 Limits Typ Max Unit ma 6 8 µa nf nc ns ns µc C/W Ω Jul. 00

3 CM00DY-A PERFORMANCE CURES OUTPUT CHARACTERISTICS GE = Tj = C COLLECTOR-EMITTER OLTAGE CE () 9 COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () 1 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS GE = 1 Tj = C Tj = 1 C COLLECTOR-EMITTER SATURATION OLTAGE CE (sat) () 8 6 COLLECTOR-EMITTER SATURATION OLTAGE CHARACTERISTICS Tj = C IC = A IC = 00A IC = A FREE-WHEEL DIODE FORWARD CHARACTERISTICS Tj = C Tj = 1 C 0 1 GATE-EMITTER OLTAGE GE () EMITTER-COLLECTOR OLTAGE EC () CAPACITANCE Cies, Coes, Cres (nf) CAPACITANCE CE CHARACTERISTICS Cies Coes Cres GE = SWITCHING TIME (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS td(off) tf td(on) tr GE = ±1 Tj = 1 C COLLECTOR-EMITTER OLTAGE CE () Jul. 00

4 CM00DY-A REERSE RECOERY TIME trr (ns) REERSE RECOERY CURRENT lrr (A) REERSE RECOERY CHARACTERISTICS OF FREE-WHEEL DIODE trr Irr GE = ±1 Tj = C NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j c ) (ratio) 1 Single Pulse TC = C Under the chip 1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) IGBT part: Per unit base = Rth(j c) = C/W FWDi part: Per unit base = Rth(j c) = 0.1 C/W 1 TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Esw(off) Esw(on) GE = ±1 Tj = 1 C SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GATE RESISTANCE GE = ±1 IC = 00A Tj = 1 C Esw(on) Esw(off) GATE RESISTANCE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE GE = ±1 Tj = 1 C Err RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GATE RESISTANCE Err GE = ±1 IE = 00A Tj = 1 C GATE RESISTANCE RG (Ω) Jul. 00

5 CM00DY-A GATE-EMITTER OLTAGE GE () GATE CHARGE CHARACTERISTICS 0 IC = 00A CC = GATE CHARGE QG (nc) Jul. 00