Беларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail

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1 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Fuji Discrete Package IGBT Outline Drawing Features Square RBSOA Low Saturation Voltage Less Total Power Dissipation Minimized Internal Stray Inductance Applications High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supply Maximum Ratings and Characteristics Equivalent Circuit Absolute Maximum Ratings ( T c) Items Symbols Ratings Units Collector-Emitter Voltage V CES 6 V Gate -Emitter Voltage V GES ± 2 V DC T c= 2 C I C 2 82 Collector Current DC T c=1 C I C 1 A 1ms T c= 2 C I C PULSE 328 IGBT Max. Power Dissipation P C 31 W FWD Max. Power Dissipation P C 14 W Operating Temperature + C Storage Temperature T stg -4 + C Mounting Screw Torque 7 Nm Electrical Characteristics ( at ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current I CES V GE=V V CE=6V 1. ma Gate-Emitter Leackage Current I GES V CE=V V GE=± 2V 2 µa Gate-Emitter Threshold Voltage V GE(th) V GE=2V I C=mA. 8. Collector-Emitter Saturation Voltage V CE(sat) V GE=V I C=A 3. V Input capacitance C ies V GE=V 3 Output capacitance C oes V CE=1V 6 pf Reverse Transfer capacitance C res f=1mhz t ON =3V 1.2 Turn-on Time I C=A.6 t OFF V GE=±V 1. Turn-off Time Switching Time R G=62Ω.3 Turn-on Time t ON =3V.16 I C=A.11 Turn-off Time t OFF V GE=+V.3 R G=6Ω.3 µs µs Diode Forward On-Voltage V F I F=A V GE=V 3. V Reverse Recovery Time r I F=A, VGE=-1V, di/dt=1a/µs 3 ns Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units Thermal Resistance R th(j-c) IGBT.4 R th(j-c) Diode.89 C/W

2 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage V GE =2V,V 12V 1 V GE =2V,V 12V C V C V 2 2 8V V 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage I C = 1A A 2A I C = 1A A 2A Switching Time vs. Collector Current Switching Time vs. Collector Current 1 =3V, R G =6.2Ω, V GE =±V, 1 =3V, R G =6.2Ω, V GE =±V, Switching Time :,,, 1 Switching Time :,,, C C

3 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Switching Time vs. R G =3V, I C =A, V GE =±V, Switching Time vs. R G =3V, I C =A, V GE =±V, Switching Time :,,, 1 1 Switching Time :,,, Gate Resistance : R G [Ω] 1 1 Gate Resistance : R G [Ω] Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics 1 2 Capacitance : C oes, C res, C ies [nf] 1,1 C ies C oes C res =2V, 3V, 4V 2 1, Gate Charge : Q G [nq] Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current 4 V R =2V, -di / dt =1A/µsec V R =2V, -di / dt =1A/µsec Reverse Recovery Time : t rr C 2 C Reverse Recovery Current : I rr 1 12 C 2 C Forward Current : I F Forward Current : I F

4 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Reverse Biased Safe Operating Area Typical Short Circuit Capability 12 +V GE =V, -V GE <V, <12 C, R G >6.2Ω 6 =4V, R G =6.2Ω, 6 t SC I SC 1 C Short Circuit Current : I SC Short Circuit Time : t SC [µs] Gate Voltage : V GE 12 Forward Voltage vs. Forward Current Reverse Recovery Characteristics vs. -di / dt I F =A, 2 Forward Current : I F C Reverse Recovery Time : t rr I rr r 2 1 Reverse Recovery Current : I rr,, 1, 1, 2, 2, 3, 3, 4, 4, Forward Voltage : V F -di / dt [A/µsec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [ C/W] FWD IGBT Pulse Width : P W [sec]

5 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Switching losses (E on, E off vs. I C ) I C Test Circuit Switching waveforms P.O. Box 7278-Dallas, TX 737 Phone (972) Fax (972)