Converter - Brake - Inverter Module (CBI3)

Transcription

1 MUBW Converer - Brake - Inverer Module (CBI3) D11 D13 D D T1 D1 T3 D3 T5 D D12 D14 D T T2 D2 T4 D4 T D See ouline drawing for pin arrangemen E72873 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier Inverer RM = 1 V S = 12 V S = 12 V VM = = = 5 SM = 3 (sa) = 2.3 V (sa) = 2.5 V Inpu Recifier D11 - D1 Symbol Condiio Maximum Raings RM 1 V V T C = 8 C; sine 18 3 I DVM T C = 8 C; recangular; d = 1/3; bridge 8 SM ; = 1 ms; sine 5 Hz 3 P o T C 1 W Symbol Condiio Characerisic Values (, unless oherwise specified) min. yp. max. = 35 ; V 1.2 V I R = RM ;.2 m.4 m pplicaion: C moor drives wih Inpu from single or hree phase grid Three phase synchronous or asynchronous moor elecric braking operaion Feaures High level of inegraion - only one power semiconducor module required for he whole drive NPT IGBT echnology wih low sauraion volage, low swiching losses, high RBSO and shor circui ruggedness Epiaxial free wheeling diodes wih Hiperfas and sof reverse recovery Indusry sandard package wih iulaed copper base plae and soldering pi for PCB mouning Temperaure see included R hjc (per diode) 1.3 K/W IXYS reserves he righ o change limis, es condiio and dimeio a 27 IXYS ll righs reserved 1-8

2 MUBW Oupu Inverer T1 - T Symbol Condiio Maximum Raings S o 15 C 12 V S Coninuous ± 2 V 25 T C 5 8 T C = 8 C 35 RBSO ; = 47 Ω; M = 7 Clamped inducive load; L = 1 µh K S SC = S ; ; = 47 Ω; 1 µs (SCSO) non-repeiive P o T C 225 W Symbol Condiio Characerisic Values (, unless oherwise specified) min. yp. max. (sa) = 35 ; = 15 V; V 2.9 V (h) = 1 m; = V ES = S ; = V; 1.1 m 1. m I GES = V; = ± 2 V 2 n d(on) 1 r Inducive load, 7 d(off) = V; = 35 5 f ; = 47 Ω 7 E on C ies = 25 V; = V; f = 1 MHz 1.5 nf Q Gon = V; = 15 V; = nc R hjc (per IGBT).55 K/W Oupu Inverer D1 - D Symbol Condiio Maximum Raings 25 T C 5 8 T C = 8 C 35 Symbol Condiio Characerisic Values min. yp. max. = 35 ; = V; V 1.8 V I RM = 3 ; di F /d = -5 /µs; 27 rr = V; = V 15 R hjc (per diode) 1.19 K/W 27912a 27 IXYS ll righs reserved 2-8

3 MUBW Brake Chopper T7 Symbol Condiio Maximum Raings S o 15 C 12 V S Coninuous ± 2 V 25 T C 35 8 T C = 8 C 25 RBSO ; = 82 Ω; M = 35 Clamped inducive load; L = 1 µh K S SC = S ; ; = 82 Ω; 1 µs (SCSO) non-repeiive P o T C 18 W Symbol Condiio Characerisic Values (, unless oherwise specified) min. yp. max. (sa) = 2 ; = 15 V; V 2. V (h) =. m; = V ES = S ; = V;.8 m.8 m I GES = V; = ± 2 V 2 n d(on) 1 r 75 Inducive load, T VJ d(off) 5 V CE = V; = 2 f 7 V E GE ; = 82 Ω on C ies = 25 V; = V; f = 1 MH z 1 nf Q Gon = V; = 15 V; = 2 7 nc R hjc.7 K/W Brake Chopper D7 Symbol Condiio Maximum Raings RM o 15 C 12 V 25 T C 1 8 T C = 8 C 11 Symbol Condiio Characerisic Values min. yp. max. = 2 ; V 2.5 V I R = RM ;. m.7 m I RM = 1 ; di F /d = -4 /µs; 13 rr = V 11 R hjc 3.2 K/W 27912a 27 IXYS ll righs reserved 3-8

4 MUBW Temperaure Seor NTC Symbol Condiio Characerisic Values min. yp. max. R 25 T kω B 25/ K Module Symbol Condiio Maximum Raings operaing C T JM +15 C T sg C V ISOL I ISOL 1 m; 5/ Hz 25 V~ M d Mouning orque (M5) 3 - Nm Symbol Condiio Characerisic Values min. yp. max. R pin-chip 5 mω d S Creepage disance on surface mm d Srike disance in air mm R hch wih heasink compound.1 K/W Weigh 3 g Dimeio in mm (1 mm =.394") 27912a 27 IXYS ll righs reserved 4-8

5 MUBW Inpu Recifier Bridge D11 - D T VJ = 45 C 15 SM I 2 2 s 1 = 45 C 4 5 = 15 C = 15 C 2 35 W 3 P o V Fig. 1 Forward curren versus volage drop per diode 5Hz, 8% RM s 1 Fig. 2 Surge overload curren R h :.5 K/W.15 K/W.3 K/W.5 K/W 1 K/W 2 K/W 5 K/W ms 8 91 Fig. 3 I 2 versus ime per diode 8 7 I d(v) I d(v)m C T amb Fig. 4 Power dissipaion versus direc oupu curren and ambien emperaure, sin 18 Fig. 5 Max. forward curren versus case emperaure T C C K/W 1.2 Z hjc.8.4 DWN s 1 Fig. Traien hermal impedance juncion o case 27912a 27 IXYS ll righs reserved 5-8

6 MUBW Oupu Inverer T1 - T / D1 - D = 17 V 15 V 13 V = 17 V 15 V 13 V 4 11 V 4 11 V 9 V V 7 9 V V 7 Fig. 7 Typ. oupu characerisics Fig. 8 Typ. oupu characerisics = 2 V V V 4 Fig. 9 Typ. rafer characerisics Fig. 1 Typ. forward characerisics of free wheeling diode V rr CE = V V = V I rr RM GE = 3 V = nc 1 Q G I RM MUBW /μs 1 -di/d Fig. 11 Typ. urn on gae charge Fig. 12 Typ. urn off characerisics of free wheeling diode 27912a 27 IXYS ll righs reserved - 8

7 MUBW Oupu Inverer T1 - T / D1 - D = V E off 15 1 = 39 Ω E E on 12 off T 4 VJ 8 d(on) = V 9 d(off) 3 R 2 4 E G = 39 Ω on 3 2 r f Fig. 13 Typ. urn on energy and swiching imes versus collecor curren Fig. 14 Typ. urn off energy and swiching imes versus collecor curren E on 4 2 = V = 35 r E on d(on) = V = 35 d(off) Ω Ω f Fig. 15 Typ. urn on energy and swiching imes versus gae resisor Fig.1 Typ. urn off energy and swiching imes versus gae resisor 1 M 4 K/W 1 Z hjc.1 diode IGBT 2 = 39 Ω T VJ Fig. 17 Reverse biased safe operaing area RBSO V.1 single pulse.1 MUBW s 1 Fig. 18 Typ. raien hermal impedance 27912a 27 IXYS ll righs reserved 7-8

8 MUBW Brake Chopper T7 / D = 15 V V 5 Fig. 19 Typ. oupu characerisics V 5 Fig. 2 Typ. forward characerisics of free wheeling diode 4 3 = V = 82 Ω 8 3. = V = 2 d(off) 1 75 d(off) Fig. 21 Typ. urn off energy and swiching imes versus collecor curren f Ω 14 Fig. 22 Typ. urn off energy and swiching imes versus gae resisor f Temperaure Seor NTC 1 K/W diode Z hjc 1 IGBT 1.1 Ω.1 R 1.1 single pulse s 1 Fig. 23 Typ. raien hermal impedance C 15 T Fig. 24 Typ. hermisorresisance versus emperaure 27912a 27 IXYS ll righs reserved 8-8

9 Mouser Elecronics uhorized Disribuor Click o View Pricing, Invenory, Delivery & Lifecycle Informaion: IXYS: MUBW35-128